• Journal of Magnetics
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• 제2권1호
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• pp.22-24
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• 1997

FeN thin films were deposited by RF-reactive diode sputtering to investigate magnetic characteristics variation due to substrate tilt during the film deposition, and their magnetic properties were measured by VSM, SEM and AFM. When the substrate tilt pivot edges were parallel to the applied field, the magnetic anisotropy was increased When the substrate tilt pivot edges were perpendicular to the applied field, the easy magnetization axis became the hard magnetization axis, and the hard axis became the easy axis as the tilt angles were increased. The reason is believed to be due to the fact that the tilt induced shape magnetic anisotropy became larger than the field induced magnetic anisotropy by DC magnetic field as the crystal grains are enlongated along the substrate tilt pivot edges due to "oblique incidence anisotropy" commonly found in eveporated thin films.

• Electrical & Electronic Materials
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• 제11권10호
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• pp.72-77
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• 1998

The effects of Al micro-bumps on the magnetic properties of CoCr(Pt)Ta/Cr films deposited on glass substrates were investigated. The coercivity increased and the coercivity squareness decreased by incorporating Cr/Al underlayers. The cause of the coercivity increase is attributed to the reduction of Co(0002) texture, the increase of magnetic isolation of CoCr(Pt)/Ta grains, and the refinement of CoCr(Pt)/Ta grains deposited on Cr/Al underlayers. The effects of an Al overlayer on the magnetic properties of CoCr(Pt)Ta/Cr films were also studied. The decrease of coercivity squareness is ascribed to the magnetic isolation of CoCr(Pt)Ta grains.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.132-135
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• 2002

MI(Magneto-Impedance) sensor which is made by thin films has significantly high detecting sensitivity in weak magnetic field. It also has a merit to be able to build in the low power system. Its structure is simple, which makes it easier to prepare a miniature. In this study, its magnetic permeability and anisotropy field($H_{k}$) as a function of a thickness of sputtered amorphous CoZrNb films with zero-magnetostriction and soft magnetic property are investigated. In order to make a uniaxial anisotropy, film was subjected to the post annealing in a static magnetic field with 1KOe intensity at 250, 300, and $320^{\circ}C$ respectively for 2 hours. Magnetic properties of film are measured by using a MH loop tracer. Its magnetic permeability of a film is measured over the frequency range 1 MHz to 750MHz. And, it was examined on the permeability and impedance to design the MI sensor which acts at 50MHz by thickening a CoZrNb film relatively, and fabricated the MI sensor which acts at the 50MHz.

• Journal of the Korean Magnetics Society
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• 제11권3호
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• pp.109-113
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• 2001

Presently, an inductor adapted at MMIC (Monolithic Microwave Integrated Circuit) which is used for cellular phone or PHS operates at quasi-microwave range over 800 MHz. However, a W-CDMA (Wideband Code Division Multiple Access) will use about 2 GHz range. Therefore magnetic film device should be compatible up to 2 GHz. We have deposited Co-Pd-Al-O system film using rf sputtering method which is expected up to 2 GHz, and investigated the effect of Pd content and magnetic field annealing. When Pd composition is 19%, Hk was 118 Oe, and ${\mu}$′showed flat frequency characteristics up to 1.5 GHz. The Q factor (=${\mu}$′/${\mu}$") was 23.3 at 1 GHz, 6.7 at 1.5 GHz and 1.5 at 2 GHz, respectively. Resonance frequency was 2 GHz. Therefore Co-Pd-Al-O thin film could be used at over 1 GHz, and also expected as an inductor material for wide band CDMA type cellular phone.

• Transactions of the Korean Society of Mechanical Engineers A
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• 제31권6호
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• pp.644-650
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• 2007

Mechanical property evaluation of micrometer-sized structures is necessary to help design reliable microelectromechanical systems(MEMS) devices. Most material properties are known to exhibit dependence on specimen size and such properties of microscale structures are not well characterized. This paper describes techniques developed for tensile testing of thin film used in MEMS. Epi-polycrystalline silicon is currently the most widely used material, and its tensile strength has been measured as 1.52GPa. We have developed a tensile testing machine for testing microscale specimen using electro-magnetic actuator. The field magnet and the moving coil taken from an audio-speaker were utilized as the components of the actuator. Structure of specimen was designed and manufactured for easy handling and alignment. In addition to the static tensile tests, it is described that new techniques and procedures can be adopted for high cycle fatigue test of a thin film.

• Journal of the Korean Magnetics Society
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• 제3권3호
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• pp.215-220
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• 1993

Microstructural dependence of magnetic property of RF/DC sputtered $Co_{69.0}Ni_{18.5}Cr_{12.5}/Cr$ double layer thin film was studied. Grain size was found to be decreased with substrate temperature in the range of $100-200^{\circ}C$ and Cr underlayer thickness(from $500\;{\AA}-2000\;{\AA}$). The peaks (200) and (1120) of X-ray diffraction patterns were evidently grown with the substrate temperature for the Cr underlayer and magnetic layer, respectively. The CoNiCr magnetic layer was found to be well epitaxialy grown on Cr underlayer, and subsequently the coercivity was enhanced.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.390-390
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• 2012

Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.

• Journal of Magnetics
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• 제11권2호
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• pp.87-89
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• 2006

CoFeV thin film alloys were fabricated by electrodeposition, and the dependences of their magnetic properties on the current density were investigated using an X-ray diffractometer and a vibrating sample magnetometer. The deposited Co increased from about 45 to 60 wt.% with increasing current density until $25mA/cm^2$ whereas the deposited Fe decreased from about 55 to 40 wt.% with increasing current density until $25mA/cm^2$. The deposited V, about 2 wt.%, was independent of the current density. The current efficiencies of electrodeposition decreased linearly from about 40 to 29% with increasing current density. The X-ray diffraction measurement showed that all peaks of the CoFeV films were consistent with those of a typical Co hcp and Fe bcc mixed phase. An increase in the current density decreased the grain size and increased the lattice constant. The saturation magnetization increased from about 2.2 to 2.5 T with increasing current density. The coercivity measured in the perpendicular direction decreased from 260 to 120 Oe with increasing current density; a drastic drop of 60 Oe occurred at $5mA/cm^2$. The coercivity measured in the in-plane direction remained almost unchanged, at about 20 Oe, with increasing current density.

• Journal of the Korean Magnetics Society
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• 제10권5호
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• pp.237-245
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• 2000

Effects of B addition and heat treatment on the magnetic and magnetostrictive properties of amorphous SmFe$_2$ thin films are investigated. A significant improvement in the magnetostrictive properties at low magnetic fields is observed with the addition of B. This improvement, however, is achieved at a heavy cost of intrinsic properties such as saturation magnetostriction. For example, at a magnetic field of 30 Oe, magnetostriction of a thin film with a B content of 9.9 at.% is increased from 190 to 333 ppm, but saturation magnetostriction is decreased by more than 50 %. This result is in accord with the deterioration (reduction) of saturation magnetization and the improvement (reduction) of coercive force at this B content. The magnetostrictive properties are also improved by annealing and optimum annealing temperature is found to be in the range 300-400 $^{\circ}C$. The main reason for the improvement is mainly considered to be due to the reduction of coercive force caused by stress relief, not due to the ultrafine SmFe$_2$ precipitates which were originally expected to form by annealing.

• Proceedings of the KSME Conference
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.1617-1620
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• 2007

This paper presents a magnetostrictive transpositioner and its fabrication process. To get a transposition movement without shifting or twisting, it is designed as an array type. To fabricate the suggested design, micromachining and selective DC magnetron sputtering processes are combined. TbDyFe film is sputter-deposited on the back side of the bulk micromachined transpositioner, with the condition as: Ar gas pressure below $1.2{\times}10^{-9}$ torr, DC input power of 180W and heating temperature of up to $250^{\circ}C$ for the wireless control of each array component. After the sputter process, magnetization and magnetostriction of each sample are measured. X-ray diffraction studies are also carried out to determine the film structure and thickness of the sputtered film. For the operation, each component of the actuator has same length and out-of-plane motion. Each component is actuated by externally applied magnetic fields up to 0.5T and motion of the device made upward movement. As a result, deflections of the device due to the movement for the external magnetic fields are observed.