• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.337-345
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• 2000

The spontaneous Hall effect in amorphous Tb-Fe and Sm-Fe thin films, which possess excellent magnetic softness, is investigated in this work to seek a possibility of practical applications of these thin films as sensors. The resistivity of Tb-Fe thin films ranges from 180 to 250 Ωcm as the Tb content varies from 35 to 46 at. %. Tb-Fe thin films show negative Hall resistivity ranging from - 7.3 to - 5.0 Ωcm in the same composition range, giving the normalized resistivity ratio in the range of -4.1 to -2.0 %. On the other hand, the resistivity of Sm-Fe thin films ranges from 150 to 166 Ωcm as the Sm content varies from 22 to 31 at. %. Sm-Fe thin films show positive Hall resistivity which varies from 7.1 to 2.8 Ωcm in the same composition range, giving the normalized resistivity ratio in the range of 4.8 to 1.7 %. These values are significantly high compared with the values of other R-T alloys, Tb-Co alloys for example, where the highest reported value is 2.5 %. Between the two different sets of samples, Tb-Fe thin films with perpendicular anisotropy are considered to be more suitable for practical applications, since saturation is reached at a los magnetic field, approximately 2 kOe in a Tb$\sub$35.1/ Fe$\sub$64.9/ thin film, for example.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.444-444
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• 2011

Recently, patterned magnetic films and elements attract a wide interest due to their technological potentials in ultrahigh-density magnetic recording and spintronic devices. Among those patterned magnetic structures, magnetic anti-dot patterning induces a strong shape anisotropy in the film, which can control the magnetic properties such as coercivity, permeability, magnetization reversal process, and magneto-resistance. While majority of the previous works have been concentrated on anti-dot arrays with a single magnetic layer, there has been little work on multilayered anti-dot arrays. In this work, we report on study of the magnetic properties of bilayered anti-dot system consisting of upper perforated Co layer of 40 nm and lower continuous Ni layer of 5 nm thick, fabricated by photolithography and wet-etching processes. The magnetic hysteresis (M-H) loops were measured with a superconducting-quantum-interference-device (SQUID) magnetometer (Quantum Design: MPMS). For comparison, investigations on continuous Co thin film and single-layer Co anti-dot arrays were also performed. The magnetic-domain configuration has been measured by using a magnetic force microscope (PSIA: XE-100) equipped with magnetic tips (Nanosensors). An external electromagnet was employed while obtaining the MFM images. The MFM images revealed well-defined periodic domain networks which arise owing to the anisotropies such as magnetic uniaxial anisotropy, configurational anisotropy, etc. The inclusion of holes in a uniform magnetic film and the insertion of a uniform thin Ni layer, drastically affected the coercivity as compared with single Co anti-dot array, without severely affecting the saturation magnetization ($M_s$). The observed changes in the magnetic properties are closely related to the patterning that hinders the domain-wall motion as well as to the magneto-anisotropic bilayer structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.778-781
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• 2002

MI(Magneto-Impedance) sensor which is made by thin films has significantly high detecting sensitivity in weak magnetic field. It also has a merit to be able to build in the low power system. Its structure is simple, which makes it easier to prepare a miniature. In this study, its magnetic permeability and anisotropy field$(H_k)$ as a function of a thickness of sputtered amorphous CoZrNb films with zero-magnetostriction and excellent soft magnetic property are investigated. In order to make a uniaxial anisotropy, film was subjected to the post annealing in a static magnetic field with 1KOe intensity at 250, 300, and $320^{\circ}C}$ respectively for 2 hours. Anisotropy field$(H_k)$ of film is measured by using a MH loop tracer. Its magnetic permeability of a film is measured over the frequency range from 1 MHz to 750MHz. It has shown that the magnetic permeability of amorphous CoZrNb film is decreased due to the skin effect with increasing a thickness of the CoZrNb film, and hence its driving frequency is lowered. And, it was examined on the permeability and impedance to fabricate the MI sensor which acts at a low frequency by thickening a CoZrNb film relatively.

• Journal of the Korean Magnetics Society
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• v.14 no.4
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• pp.120-126
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• 2004

In order to understand the temperature dependence of magnetic properties of $F_{84}Nb_{16}$(wt.%) thin films, ferromagnetic resonance experiments have been carried out. The ferromagnetic resonance spectra for all temperatures consist of several volume modes and one (or two) surface modes. It is suggested that both surface of the film have a perpendicular hard axis to the film plane (negative surface magnetic anisotropy). Saturation magnetization coincides with the Block's T$\^$2/3/ and spectroscopic splitting factor is almost constant in the temperature range from 113 K to 293 K. The surface magnetic anisotropy constant K$\_$s2/ of the film-substrate interface increased with decreasing temperature in the temperature range from 233 K to 293 K. The surface magnetic anisotropy constant K$\_$s1/ of the air-substrate interface decreased from -0.322 erg/$\textrm{cm}^2$ to -0.394 erg/$\textrm{cm}^2$ as the temperature decreased to 253 K and was almost constant below 233 K.233 K.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.53-57
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• 2019

In this study, we prepared sputtering cathode for large sputtering thin film in the facing targets sputtering(FTS) system. Before fabrication of cathode equipment, we investigated optimal magnetic flux in the sputtering cathode by using magnetic field stimulation(Comsol). According to the result of magnetic field stimulation, we manufactured the cathode. After we mounted laboratory-designed cathode on FTS system, the discharge properties were observed in vacuum condition. In addition, ITO films were deposited on glass substrate and their electrical and optical properties were investigated by various measurements (four-point probe, UV-VIS spectrometer, field emission scanning electron microscopy(FE-SEM), Hall-effect measurement).

• Journal of Magnetics
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• v.19 no.3
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• pp.232-236
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• 2014

Anisotropy coupling in thin films with mixed induced and shape anisotropies is investigated. A 200-nm-thick Co-Fe-Pd-B thin film with a large induced anisotropy of 57 Oe is fabricated and then patterned into micron-sized cells to provide shape anisotropy, whose strength has a similar magnitude to that of the induced anisotropy for enhancing the anisotropy coupling. The angles between the two mixed anisotropies considered are $0^{\circ}$, $90^{\circ}$, and $110^{\circ}$. Hysteresis loops measured under in-plane magnetic fields along various directions indicate no anisotropy coupling behaviour for all the three angles examined in this study.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.133-136
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• 2005

In the case of contacts between semiconductor and metal in semiconductor devices, they tend to be unstable because of thermal budget. To prevent these problems we deposited W-C-N diffusion barrier for preventing the interdiffusion between metal and semiconductor. The thickness of the barrier is $1,000{\AA}$ and the pressure is 3 mTorr during the deposition. In this work we coated LSMO (CMR material) on W-C-N diffusion barrier and then we studied the interface effects between LSMO layer and W-C-N diffusion barrier. We got results that the magnetic characteristics of LSMO thin film are still maintained after annealing at $800^{\circ}C$ for 3 hr because W-C-N thin diffusion barrier was prevented the diffusion of oxygen between LSMO and Si substrate.

• Journal of the Korean institute of surface engineering
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• v.23 no.4
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• pp.218-224
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• 1990

Silicon nitride thin(SiNx) is deposited onto 3 inch silicon wafor using ECR plasma apparatus. For the two different plasma extraction windows size, the thin films which were deposited by changing the SiH4/N2 gas fole at at 1.5mTorr without substrate heating are analyzed through the XPS and wlliposometer measurements. The very uniform and good quality silicon nitride thin film were obtained with the analyzed results of the deposited films, and particularly, ion temperature perpendicular to the magnetic filed was nearly same as the neutral gas temperature. The large amount of plasma loss in the transport process following magnetic field lines could be seen from the plasma emission intensity measurements.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.957-960
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• 2009

Sensor applications of thin-film transistors (TFTs), such as photosensor, magnetic sensor, temperature sensor and chemical sensor, are introduced. Active-matrix circuits and amplifying circuits using poly-Si TFTs are integrated with these sensors to improve sensor performances and generate additional functions. These sensors may be promising applications after flat-panel displays (FPDs) in giant-micro electronics.

• Journal of the Korean Magnetics Society
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• v.3 no.3
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• pp.208-214
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• 1993

In order to investigate the origin of an increase in the coercivity with the Ta addition to Co-Cr films, the perpendicular magnetic anisotropy of Co-Cr film and CoCrTa film was measured by a torque magnetometer and VSM. In Co-Cr binary alloy film, the uniaxial anisotropy increased with increasing Cr content. The perpendicular magnetic anisotropy of $Co_{81.7}Cr_{16.7}Ta_{1.6}$ film was larger than that of $Co_{81}Cr_{19}$ film, both of which were deposited at the same substrate temperature of $100^{\circ}C$. The change in the perpendicular magnetic anisotropy with annealing was studied to understand the Ta addition effect. The amount of decrease in perpendicular magnetic anisotropy of the CoCrTa film by the annealing was larger than that of Co-Cr film. And the perpendicular magnetic anisotripies of Co-Cr film and CoCrTa film after annealing were almost the same. The cause of this was interpretated as the enhanced segregation of solute atoms in the Ta added thin film in the as-deposited state. The enhanced segregation of solute atoms increases the perpendicular magnetic anisotropy of the film, and causes the increase of perpendicular coercivity of the film.