• 한국자기학회지
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• 제15권2호
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• pp.106-108
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• 2005

The rutile polycrystal $Ti_{0.99}\;^{57}Fe_{0.01}O_2$ prepared with $^{57}Fe$ enriched iron have been studied by $M\ddot{o}ssbauer$ spectroscopy, X-ray diffraction and VSM. The $M\ddot{o}ssbauer$ spectrum of $Ti_{0.99}\;^{57}Fe_{0.01}O_2$ consists of a ferromagnetic and a paramagnetic phase over all temperature ranging from 4 to 300 K. Isomer shifts indicate $Fe^{2+}$ for the ferromagnetic phase, but $Fe^{3+}$ for the paramagneic phase of $Ti_{0.99}\;^{57}Fe_{0.01}O_2$ sample. It is noted that the magnetic hyperfine field of ferromagnetic phase had the value about 1.48 times as large as that of $\alpha$-Fe. The XRD data for $Ti_{0.99}\;^{57}Fe_{0.01}O_2$ showed a pure rutile phase with tetragonal structures without any segregation of Fe into particulates within the instrumental resolution limit The magnetic hysteresis (M-H) curve at room temperature showed an obvious ferromagnetic behavior and the magnetic moment per Fe atom under the applied field of 1 T was estimated to be about $0.71{\mu}_B$, suggesting a low spin configuration of Fe ions.

• 제어로봇시스템학회논문지
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• 제6권6호
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• pp.454-461
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• 2000

Electrostatic suspension offers an advantage of directly suspending various materials such as conductive materials, semiconductors and dielectric materials without any mechanical contacts. This is a specific feature compared with electromagnetic suspension which can suspend only ferro-magnetic material. In general, the electrostatic suspension systems require position sensors for stabilizing the suspended object. Therefore, a lot of displacement sensors and a switching circuit are required for moving the object through a long distance. In order to circumvent this problem, this paper proposes a self-sensing method which can provide the gap displacement between electrodes and suspended object without external sensors. Moreover a simple on-off controller is presented for stabilization. Experimental validation of the proposed scheme has been performed through the successful levitation of a 4-inch silicon wafer.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.163-164
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• 2006

In this paper, an analytical laser ablation model with Maxwell equation will be addressed by considering relationship between laser ablation and material. The Maxwell equation consists of four equations: two Gauss laws for electric and magnetic fields, Faraday's law, and Ampere's law. This analytical model will be calculated by employing Finite Difference Time Domain (FDTD). This method also makes it possible to simulate the laser beam propagation in a wide range of materials, such as metals, semiconductors, and dielectrics. Therefore, in this study, a numerical model for short pulse laser interaction with materials is developed, focusing on the accurate description of laser beam propagation and ablation process into the material with each pulse.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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• pp.828-830
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• 1988

This paper considered temperature-sensitive characteristics on the basis of curie tempeature and quenching method in the process of manufacturing Mn-Cu-Zn Fersite. The results are as follow. Curie tempeature drops according as the content of CuO and ZnO increases. It also decreases according as sintering temperature increases when the content of ZnO in fixed. Curie temperature drops more in quenching than in slow cooling and activation energy diminishes were too. On the basis of curie tempeature, activation energy is greater in paramagnetic region than in ferrimagnetic region. As its voltage-crrent characteristics is similar to that semiconductors, the temperature-sensitive ferrite is expeated to be appied in the area of power electronics.

• 한국자기학회지
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• 제21권2호
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• pp.67-76
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• 2011

반도체 스핀트로닉스는 자성체와 반도체를 결합하여 반도체 내에서의 전자 스핀을 이용하는 새로운 형태의 자성체-반도체 융합기술이며, 스핀 트랜지스터는 반도체 스핀트로닉스의 대표적인 소자이다. 이 소자를 실현하면, 반도체 내에 전자 스핀을 주입, 제어, 검출함으로써, 한 소자 내에서 정보처리와 정보저장을 동시에 수행할 수 있을 것으로 기대된다. 특히, 반도체 산업의 주축 물질인 실리콘을 이용하여 스핀 트랜지스터를 실현한다면, 이는 정보 산업에 중대한 영향을 미칠 것으로 예상된다. 이 글에서는 최근 실리콘 스핀트로닉스 분야에서의 주요한 진전을 소개하고, 앞으로의 기술적 과제에 대하여 간단히 기술하고자 한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.166-166
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• 2000

We studied electronic structure of magnetic semiconductors EuO, EuS, and EuTe. The photoemission spectra show localized Eu 4f states and broad anion p bands. As the size of anion increases from oxygen to tellurium, anion p band width increases and eventually overlaps Eu 4f states. Hence in EuO and EuS, Eu 4f states are the highest occupied stated lying above anion p band, while Te 5p band spreads widely over Eu 4f states to become valence band maximum in EuTe. It was also observed that Eu 4f states have width of 0.7eV and dispersion of 0.2eV in EuS by angle resolved photoemission spectroscopy. The width of the 4f spectra mainly originates from atomic multiplets, but the much larger dispersion than that of Eu metal is due to p-f mixing.

• 한국염색가공학회지
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• 제35권4호
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• pp.274-283
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• 2023

Conductive polymers are polymers that conduct electricity like metal conductors. Unlike typical organic polymers, they are polymers that have the electrical, magnetic, and optical properties of metals or semiconductors. For Example, these conductive polymers include Polypyrrole (PPy), Polyaniline (PANI), and Polythiophene (PT). On the other hand, Insulating polymers do not conduct electricity well while providing insulation, which is the opposite of conductivity. With the exception of conductive polymers, most polymers are non-conductors. Insulating polymers include polyimide (PI), polystyrene (PS), and poly(vinyl alcohol) (PVOH, PVA, or PVAl). Although many different polymers exist, we have simply illustrated the properties and recent developments of conductive and insulating polymers, which have opposite properties.

• 한국자기학회지
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• 제19권5호
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• pp.186-190
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• 2009

본 연구에서는 수직 Bridgman 법으로 묽은 자성 반도체 Cd$_{1-x}$Mn$_x$Te 단결정을 성장시켜 Mn의 조성비 변화에 따른 자기광학적 특성과 응용성을 조사하였다. X-선 회절 실험으로부터 x < 0.82 조성에 대하여 zinc-blende 구조임을 확인하였다. 띠 간격 에너지는 온도 감소와 Mn 조성비 증가에 대하여 선형적으로 증가하였다. Faraday 회전은 광 에너지 증가 때문에 띠 간격 에너지 근처에서 증가하였고, Mn 조성비 x가 증가함에 따라 증가하였다. Cd$_{0.62}$Mn$_{0.38}$Te 결정을 이용한 광 아이솔레이트의 아이솔레이션과 삽입손실은 45와 0.35 dB이었다.

• 한국자기학회지
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• 제16권1호
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• pp.11-13
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• 2006

[ $M\"{o}ssbauer$ ] spectra of $Ti_{1-x-y}Co_xFe_yO_2(0.01{\leq}x,\;y{\leq}0.05)$ prepared with $^{57}Fe$ enriched iron have been taken at various temperatures ranging from 80 to 300K. The Mossbauer spectrum of $Ti0.94Co_{0.03}Fe_{0.03}O_2$ consists of a ferromagnetic (six-Lorentzian), a paramagnetic phase (doublet) and armorphous phase over all temperature ranges. Isomer shifts indicate $Fe^{3+}$ for the ferromagnetic phase and the paramagneic phase of $Ti_{1-x-y}Co_xFe_yO_2$ samples. It is noted that the magnetic hyperfine field of ferromagnetic phase had the value about 1.5 times as large as that of u-fe. The XRB data for $Ti_{1-x-y}Co_xFe_yO_2$ showed mainly rutile phase with tetragonal structures without any segregation of Co and Fe into particulates within the instrumental resolution limit. The magnetic moment per (Co+Fe) atom in $Ti0.94Co_{0.03}Fe_{0.03}O_2$, under the applied field of 1T was estimated to be about $0.332{\mu}_B$ which is ten times as large as that of $Ti0.97Co_{0.03}Fe_{0.03}O_2,\;0.024{\mu}_B$ per Co atom, suggesting a high spin configuration of Co and fe ions.

• Journal of Magnetics
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• 제10권3호
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• pp.95-98
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• 2005

We report hole-induced ferromagnetism in diluted magnetic semiconductor $Zn_{0.99}Mn_{0.01}$ films grown on $SiO_2/Si$ substrates by reactive sputtering. The p-type conduction with hole concentration over $10^{18}\;cm^{-3}$ is achieved by P doping followed by rapid thermal annealing at $800^{\circ}C$ in a $N_2$ atmosphere. The p-type $Zn_{0.99}Mn_{0.01}O:P$ is carefully examined by x-ray diffraction and transmission electron microscopy. The magnetic measurements for $p-Zn_{0.99}Mn_{0.01}O:P$ clearly reveal ferromagnetic characteristics with a Curie temperature above room temperature, whereas those for $n-Zn_{0.99}Mn_{0.01}O:P$ show paramagnetic behavior. The anomalous Hall effect at room temperature is observed for the p-type film. This result strongly supports hole-induced room temperature ferromagnetism in $p-Zn_{0.99}Mn_{0.01}O:P$.