• 한국진공학회지
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• 제12권S1호
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• pp.104-106
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• 2003

In this study, the electronic structures and physical properties of Ni$_2$MnGa alloy films and their dependence on the order-disorder structural transitions were investigated. The results show that the ordered films behave nearly the same as the bulk $Ni_2$MnGa alloy, including the martensitic transformation at 200 K. Unexpectedly, the disordering in $Ni_2$MnGa alloy films does not lead to any appreciable magnetic ordering down to 4 K. An annealing of the disordered films restores the ordered structure with an almost full recovery of the magnetic and the transport properties of the ordered $Ni_2$MnGa alloy films. A possible explanation of the disappearance of magnetic moment in the disordered film is given by using the ab initio first-principles electronic-structure calculations.

• 한국세라믹학회지
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• 제43권11호
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• pp.703-709
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• 2006

We report on the synthesis of highly uniform, single phase zinc and cobalt thin films prepared by the Liquid Phase Deposition (LPD) method. X-Ray diffraction, TGA and EDX measurements support the assumption that the as deposited films are constituted by a mixture of crystallized FeOOH and amorphous M(OH)$_2$ (M=Co, Zn) which is converted upon heat treatment in air at 600?C into the corresponding zinc ferrites. The films with adjustable chemical compositions are identified with a crystal structure as spinel-type and present a spherical or rod-like microstructure, depending on the both the nature and concentration of the divalent transition metal ions. Zinc ferrite thin films present a superparamagnetic behavior above blocking temperatures which decrease with increasing the Zn content and are ferromagnetic at 5 K with coercivities ranging between 797.8 and 948.5 Oe, whereas the cobalt ferrite films are ferromagnetic at room temperature with magnetic characteristics strongly dependent on the chemical composition.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.390-390
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• 2012

Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.

• 한국자기학회지
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• 제15권2호
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• pp.109-112
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• 2005

Electronic and magnetic properties of $Ti_{1-x}M_xO_{2-\delta}$ (M=Co and Fe) thin films grown by sol-gel method have been investigated. Anatase and rutile $Ti_{1-x}Co_xO_{2-\delta}$ films were successfully grown on $Al_2O_3$ (0001) substrates and exhibited p-type electrical conductivity while the undoped films n-type conductivity. Room temperature vibrating sample magnetometry measurements on the anatase and rutile $Ti_{1-x}Co_xO_{2-\delta}$ films with same x ($=4.8 at.{\%}$) showed quite similar magnetic hysteresis curves with the saturation magnetic moment of $\~4 {\mu}_B$ per Co ion despite their differences in structural and electronic properties. Such giant magnetic moment is attributable to the unquenched orbital moment of the $Co^{2+}$ ions substituting the octahedral $Ti^{4+}$ sites. Similar ferromagnetic behavior was observed for $Ti_{1-x}Fe_xO_{2-\delta}$ films that are highly resistive compared to the Co doped samples. Saturation magnetic moment was found to decrease for higher x, i.e., $\~2$ and $\~1.5 {\mu}_B$ per Fe ion for x=2.4 and 5.8 at. $\%$, respectively. Conversion electron $M\ddot{o}ssbauer$ spectroscopy measurements predicted the coexistence of $Fe^{2+}$ and $Fe^{3+}$ ions at the octahedral sites of $Ti_{1-x}Fe_xO_{2-\delta}$.

• 한국자기학회지
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• 제5권5호
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• pp.519-523
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• 1995

The Fe-TM-C-N nanocrystalline films (TM : Hf, Zr and Nb) are investigated to examine the relation between microstructure and soft magnetic properties. In these films, as the atomic radius of TM element increases, $P_{N2}$ which was added to get good soft magnetic properties was decreased and the maximum value of the permeability shifted to the high Fe range in the composition diagram. The best soft magnetic properties achieved in these films are : Hc of 0.15 Oe, $\mu_{eff}$ of 7800 (1MHz) and $4{\pi}M_{s}$ of 17.5 kG in Fe-Hf-C-N film ; Hc of 0.06 Oe, $\mu_{eff}$ of 2750 (1MHz) and $4{\pi}M_{s}$ of 16.8 kG in Fe-Zr-C-N film and Hc of 0.31 Oe; $\mu_{eff}$ of 2100 (1MHz) and $4{\pi}M_{s}$ of 15.5 kG in Fe-Nb-C-N film. It was considered that the stronger the bonding force between TM and C(N), the finer TM(C,N) phase is precipitated and therefore, the finer $\alpha$-Fe grains are formed. The effective permeability of the Fe-Zr-C-N films and Fe-Nb-C-N films remains nearly constant up to 10 MHz.

• Journal of Magnetics
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• 제22권1호
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• pp.49-54
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• 2017

The significant reduction of the image quality caused by the magnetic field of samples is a major problem affecting the application of SEM (scanning electron microscopy) in the analysis of electronic devices. The main reason for this is that the electron trajectory is deflected by the Lorentz force. The usual solution to this problem is degaussing the sample at high temperatures. However, due to the poor heat resistance of some electronic components, it is imperative to find a method that can reduce the impact of magnetic field on the image quality and is straightforward and easy to operate without destroying the sample. In this paper, the influence of different magnetic field directions on the imaging quality was discussed by combining the experiment and software simulation. The principle of the method was studied, and the best observation direction was obtained.

• 한국표면공학회지
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• 제29권5호
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• pp.393-398
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• 1996

Soft magnetic properties and microstructural evolution of FeTaNC films were investigated, and compared with FeTaN and FeTaC films. Effects of substrate species (glass vs. $CaTiO_3$) on the magnetic properties were also investigated. Co-addition of N and C significantly enhance the grain refinments and magnetism, compared with N or C addition only. Good soft magnetic characteristics of coercivity of 0.17 Oe, permeability of 4000 (5MHz), and saturation flux density of 17 kG can be obtained in the FeTaNC in the relatively wide process windows. While these values appears to be similar to those of FeTaN on glass substrate, most distinctive difference between FeTaNC and FeTaN(or C) is in the effects of substrate. Whereas FeTaNC films show good magnetic characteristics for both glass and $CaTiO_3$ substrates, FeTaN(or C) films show significant degradation on the $CaTiO_3$ substrate.

• 한국전기전자재료학회논문지
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• 제11권5호
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• pp.413-417
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• 1998

In this paper, we investigate frequency dependance of inductance of FeCoB amorphous magnetic films. $(Fe_{1-x}Co_x)_{79}Si_2B_{19}$ was used as the basic composition of amorphous magnetic film having near zero magnetostriction. The amorphous magnetic films were fabricated with x=0.94 and x=0.95 by using sputtering method at high frequency. The films were anneald under non-magnetic field and near crystallization temperatures(30min at $280^{\circ}C$, 30min and 1hr at $400^{\circ}C$, respectively). As the results of the experiments with the fabricated films, the lowest coercive force was 0.084[Oe] at 400[W] of the input power and the crystallization temperature was $360^{\circ}C$ . In the case 30min at 40$0^{\circ}C$ the inductance value in the low frequency with x=0.95 was higher by 488% than that with x=0.94. The quality factor Q was below 0.7 for all samples. We obtained the highest quality value at 400[KHz] with 30min at $280^{\circ}C$ and x=0.94. The value was about 0.62. Also, the quality factor value was about 0.35 at 1[MHz] with 30min at $280^{\circ}C$ and x=0.95.

• 한국자기학회지
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• 제4권1호
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• pp.1-6
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• 1994

본 연구에서는 초 연자성(ultra-soft magnetic) 비정질 박막에서 관찰되는 감쇄가 큰(overdamped) 고주파 자기특성의 원인을 이해함으로써 자기 스핀의 동적 자화거동을 확인하고자한다. 고주파에서의 자화율(susceptibility) 특성곡선에 대한 실험결과와 Gilbert의 운동방정식으로 부터의 계산 결과를 비교하여 초 연자성 박막의 겨우 $\alpha=20$ 정도의 큰 감쇄상수와 무시할 정도로 작은 $D_{x}{\approx}D_{y}{\approx}D_{z}{\approx}0$의 반자장 계수를 구하였다. 이 결과로 부터 불균일 박막의 자화율 특성곡선과 자기 스핀의 동적 자화거동을 설 명하기 위해 vortex 형상의 자화분포를 제안하였다. Vortex형 자화분포는 초 연자성 박막 내의 미세한 자성입자들에서의 안정된 스핀 분포로 형성되며, vortex의 불균일한 스핀운동은 스핀파로 부터의 에너지와 박막내 결함구조와의 상호작용에 의해 큰 감쇄를 갖는 것으로 설명되었다.

• Journal of Magnetics
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• 제13권4호
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• pp.160-162
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• 2008

In this work the magnetic anisotropies of magnetostriction material $Tb(Fe_{0.55}Co_{0.45})_{1.5}$ (named a-TerfecoHan) films were investigated with respect to working pressures in the range 1-7 mTorr. The results obtained show that perpendicular magnetic anisotropy (PMA) can be obtained at a working pressure above 5.1 mTorr. XRD was utilized to clarify the origin of the PMA observed in $Tb(Fe_{0.55}Co_{0.45})_{1.5}$ films, and revealed that all samples were amorphous. Therefore, we propose that the PMA effect is explained by stress produced in film due to internal relaxation process and magnetic anisotropy enhancements caused by magnetoelastic interactions.