• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.461-462
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• 2008

$BaMgAl_{10}O_{17}$:Mn, $Eu^{2+}$ green phosphors has been synthesized by the solid state reaction. Green phosphors of nano-size were manufactured in short time by shake method. which were easily manufactured respectively general method. Green phosphors of nano size were control additive, size of $ZrO_3$ ball, shake time and weight of ball in toluene. In result that green phosphors were obtained particle size of 140nm~150nm. The characteristics of fired samples were obtained by 365nm and 380nm excitation source under ultraviolet. In result that the highest PL intensity were observed in wavelength of 365nm.

• Journal of Radiation Protection and Research
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• v.30 no.2
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• pp.77-84
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• 2005

The authors submit the data concerning the methods of obtaining semiconductor scintillators on the basis of the zinc chalcogenide crystal doped with impurities (Te, Cd, O, $Me^{III}-metals$ Al, In, etc.). Characteristics of such crystals and mechanisms for the semiconductor scintillator luminescence are described as well. The scintillator luminescence spectra maximums are located within the range 450-640nm, which depends on the method of preparing the scintillator. The luminescence decay time ranges within $0.5-10{\mu}s\;and\;30-150{\mu}s$. The afterglow level is less than 0.01% after $10-20{\mu}s$, and the radiation stability is ${\geq}5{\cdot}10^8$ rad. Thermostability of the output characteristics of new semiconductor scintillators on the basis of zinc selenide is prescribed by thermodynamic stability of the principal associative radiative recombination centers that come into existence due to the crystal lattice inherent imperfections. Certain application fields of the new scintillators are examined taking into account their particular qualities.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.269-274
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• 2003

The electrical, optical and structural properties of ZnNiO thin _ films deposited on Si substrates using rf-magnetron sputtering method have been investigated before and after the thermal annealing processes. The crystallinity of the ZnNiO thin film become degraded with increasing the Ni contents. This is mainly because the lattice of the thin film was expanded due to the oxygen-deficient conditions. Concerning the electrical properties of the thin film, the carrier concentration increases ($6.81\times10^{14}\textrm{cm}^{-2}$) and Hall mobility decreases (36.3 $\textrm{cm}^2$/Vㆍs) with higher doping concentration of Ni. However, the carrier concentration and Hall mobility became low ($1.10\times10^{14}\textrm{cm}^2$ and high (209.6 $\textrm{cm}^2$/Vㆍs), respectively, after the thermal annealing process at $1000 ^{\circ}C$. We also observed a strong luminescene center peaking at 546 nm in photoluminescence spectra, which was caused by a deep level center in the ZnO band gap with oxygen deficient ZnNiO structure.