• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1341-1346
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• 2004

The OLED research is gone for two directions. One is material development research, and another one is structural improvement part. All two are thing to heighten luminescence efficiency of OLED. n other to improve luminescence efficiency of OLED Electron - hole pairs must consist much more in the device Their profiles are sensitive to mobility velocity of electrons and holes. In this paper, we demonstrate the difference of velocity between hole and electron by experiments, and compare with a data of simulation and experiment changing hole carrier transport layer thickness, so we get the optimal we improve luminescence efficiency. We suggest improving the efficiency of OLEDS would be to balance the injection of electrons and holes into light emission layer of the device. And, we improve understanding of the various luminescence efficiency through experiments and numerical analysis of luminescence efficiency in variable hole carrier transport layer's thickness.

• 한국광학회:학술대회논문집
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• 한국광학회 2004년도 하계학술발표회
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• pp.172-173
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• 2004

Recently there has been many understood the basis device physics OLEDs and their basic operating principle. We demonstrate that there have many relation in order to improve luminescence efficiency both emitting light material physics characteristics and luminary. Efficient Electro Luminescence from organic materials was first reported in 1987 at Kodak. OLEDs emitting light material use tris-(8-hydroxyquinoline)(Alq3). Sudied maximum luminescence efficiency about structure of optimized emitting light layer of OLED which do observing change of luminescence efficiency by structure change of organic material in this paper.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1002-1006
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• 2004

The studies on OLED(Organic Light-Emitting Diode) materials and structures have been researched in other to improve luminescence efficiency of OLED. Electrons and holes are injected into the devices, transported across the layer and recombine to form excitons, their profiles are sensitive to mobility velocity of electrons and holes. A suggested means of improving the efficiency of LEDs would be to balance the injection of electrons and holes into light emission layer of the device. In this paper, we demonstrate the difference of velocity between hole and electron by experiments, and compare with a data of simulation and experiment changing hole carrier transport layer thickness, so we get the optimal we improve luminescence efficiency. We improve understanding of the various luminescence efficiency through experiments and numerical analysis of luminescence efficiency in the hole carrier transport layer's thicknes.

• 한국세라믹학회지
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• 제21권3호
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• pp.245-252
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• 1984

Willemite phosphor is a good one having excellent luminescence efficiency that it;s emission wavelength is in the range of about 525 nm. The energy band gap of this willemite phosphor is about 4.1 eV. When the ratio of ZnO/SiO is 1.8 and Mncl in used as activator source the phosphor has the value of maximum luminescence efficiency. The characteristic of willemite phosphor is tendency of the dependence of temperature. The willemite which was fired with activator after being synthesized at initial firing without activator shows higher value of luminescence efficiency than willemite which was fired with activator in initial stage, When the concentration of activator is 1-1.5mol% it has its most favorite condition and the value of luminescence efficiency decreases according to increasement of activator concentration.

• International Journal of Precision Engineering and Manufacturing
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• 제7권2호
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• pp.52-55
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• 2006

The OLEDs(Organic Light-Emitting Diodes) structure organizes the bottom layer using glass, ITO(indium thin oxide), hole injection layer, hole transport layer, emitting material layer, electron transport layer, electron injection layer and cathode using metal. OLED has various advantages. OLEDs research has been divided into structural side and emitting material side. The amount of emitting light and luminescence efficiency has been improved by continuing effort for emitting material layer. The emitting light mechanism of OLEDs consists of electrons and holes injected from cathode and anode recombination in emitting material layer. The mobilities of injected electrons and holes are different. The mobility of holes is faster than that of electrons. In order to get high luminescence efficiency by recombine electrons and holes, the balance of their mobility must be set. The more complex thin film structure of OLED becomes, the more understanding about physical phenomenon in each interface is needed. This paper observed what the thickness change of hole transport layer has an affection through the below experiments. Moreover, this paper uses numerical analysis about carrier transport layer thickness change on the basis of these experimental results that agree with simulation results.

• Journal of Radiation Protection and Research
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• 제41권3호
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• pp.222-228
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• 2016

Background: We are developing a small size dosimeter for dose estimation in particle therapies. The developed dosimeter is an optical fiber based dosimeter mounting an radiation induced luminescence material, such as an OSL or a scintillator, at a tip. These materials generally suffer from the quenching effect under high LET particle irradiation. Materials and Methods: We fabricated two types of the small size dosimeters. They used an OSL material Eu:BaFBr and a BGO scintillator. Carbon ions were irradiated into the fabricated dosimeters at Heavy Ion Medical Accelerator in Chiba (HIMAC). The small size dosimeters were set behind the water equivalent acrylic phantom. Bragg peak was observed by changing the phantom thickness. An ion chamber was also placed near the small size dosimeters as a reference. Results and Discussion: Eu:BaFBr and BGO dosimeters showed a Bragg peak at the same thickness as the ion chamber. Under high LET particle irradiation, the response of the luminescence-based small size dosimeters deteriorated compared with that of the ion chamber due to the quenching effect. We confirmed the luminescence efficiency of Eu:BaFBr and BGO decrease with the LET. The reduction coefficient of luminescence efficiency was different between the BGO and the Eu:BaFBr. The LET can be determined from the luminescence ratio between Eu:BaFBr and BGO, and the dosimeter response can be corrected. Conclusion: We evaluated the LET dependence of the luminescence efficiency of the BGO and Eu:BaFBr as the quenching effect. We propose and discuss the correction of the quenching effect using the signal intensity ratio of the both materials. Although the correction precision is not sufficient, feasibility of the proposed correction method is proved through basic experiments.

• 한국응용과학기술학회지
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• 제16권4호
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• pp.307-311
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• 1999

Interfacial properties of electrode and organic thin layer is one of the most important factor in performing a Light Emitting Diodes(LED). Phthalocyanine copper was used as a buffer layer to improve interface characteristic, so that device efficiency was improved. In this study, LEDs were fabricated as like structures of Indium-Tin-Oxide (ITO) / N,N' -Diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) / 8-Hydroxyquinoline aluminum(Alq) / Aluminum(Al) and Indium-Tin-Oxide(ITO) / N,N'-Diphenyl-N,N' -di(m-tolyl)-benzidine(TPD) / 2-(4-Biphenylyl)-5(4-tert-butyl-phenyl)-1,3,4-oxadiazole(PBD) / Aluminum(Al). In these devices, CuPC was layered at electrode/organic layer interface. As position is changing and thickness is changing, devices showed characteristic luminescence efficiency and luminescence inensity respectively. We showed in this study that luminescence efficiency was improved with CuPC layer in LEDs. The efficiency of device with layer CuPC is higher than that of 2 layer CuPC. However, the luminescence of 2 layer CuPC device got higher value.

• 한국전기전자재료학회논문지
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• 제17권9호
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• pp.988-993
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• 2004

Luminescence characteristics of Ag-doped ZnO as the quantum dot materials to increasing the efficiency on dye-sensitized solar cells (DSC) have been studied. Ag doped ZnO powder was produced by the self-sustaining combustion process using ultrasonic spraying heating method. Luminescence wavelength region of the ZnO by Ag doping was shifted to longer wavelength. Tn the case of the Ag doped ZnO powder, broad luminescence spectrum centered on 600nm was observed. On the other hand, we compared PL data of RTA treated ZnO:Ag film at various temperatures because the front electrode of solar cell was in need of the sintering process. In XRD and PL data for RTA treated film at the 500$^{\circ}C$ showed good property. And, it was found that the grain size wasn't growing but only optical property was changed. According to the result of XRD, PL, absorption, emission spectrum and DV-X${\alpha}$ used in theoretical calculation, it is considered to be possible to use Ag doped ZnO as quantum dot material for improving DSC efficiency.

• Journal of Radiation Protection and Research
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• 제41권2호
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• pp.179-183
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• 2016

Background: As an important detecting device, TLD is a widely used in the radiation monitoring. It is essential for us to study the property of detecting element. The aim of this study is to calculate the thermo-luminescence efficiency of TL elements. Materials and Methods: A batch of thermo-luminescence elements were irradiated by the filtered X-ray beams of average energies in the range 40-200 kVp, 662 keV $^{137}Cs$ gamma rays and then the amounts of lights were measured by the TL reader. The deposition energies in elements were calculated by theory formula and Monte Carlo simulation. The unit absorbed dose in elements by photons with different energies corresponding to the amounts of lights was calculated, which is called the thermo luminescent efficiency (${\eta}^{(E)}$). Because of the amounts of lights can be calculated by the absorbed dose in elements multiply ${\eta}^{(E)}$, the ${\eta}^{(E)}$ can be calculated by the experimental data (the amounts of lights) divided by absorbed dose. Results and Discussion: The deviation of simulation results compared with theoretical calculation results were less than 5%, so the absorbed dose in elements was calculated by simulation results in here. The change range of ${\eta}^{(E)}$ value, relative to 662 keV $^{137}Cs$ gamma rays, is about 30% in the energy range of 33 keV to 662 keV, is in accordance by the comparison with relevant foreign literatures. Conclusion: The ${\eta}^{(E)}$ values can be used for updating the amounts of lights that are got by the direct ratio assumed relations with deposition energy in TL elements, which can largely reduce the error of calculation results of the amounts of lights. These data can be used for the design of individual dosimeter which used TLD-2000 thermo-luminescence elements, also have a certain reference value for manufacturer to improve the energy-response performance of TL elements by formulation adjustment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.15-18
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• 2001

Perdeuterated hexaflouroacetylacetonato-ytterbium [Yb(SOL)-D)$_3$] complexes were synthesized by the keto-enol tautomerism reaction of Yb(SOL-H)$_3$ in methanol-d$_4$in methanol-d$_4$in order to reduce the radiationless transition to the ligands. The luminescence properties of Yb(SOL-D)$_3$complex were measured in the following anhydrous deuterated organic solvents ; Methanol-d$_4$, THF-d$\sub$8/, PO(OCH$_3$)$_3$ and DMSO-d$\sub$6/. The intensity, lifetime and quantum efficiency of the luminescence in DMSO-d$\sub$6/ were superior to those in other deuterated solvents. It was suggested that the anhydrous DMSO-d$\sub$6/ might be the most appropriate solvent for the liquid laser material of Yb(SOL-D)$_3$ complex.