• Proceedings of the IEEK Conference
• /
• 2001.10a
• /
• pp.514-519
• /
• 2001

Converter has been slag produced 10 million tons per year in Japan. It is a steel making by product produced in the same way as the blast-furnace slag. Though blast-furnace slag is being used effectively as a concrete admixture, the converter stag has never been used effectively because of the expansion action of contained free lime and iron oxide. This is an important environmental problem in the steel industry. Beta-2CaOSiO$_2$(beta-C$_2$S) is contained 40 percent in converter slag, therefore it is very promising as a concrete admixture. We proposed an accelerated aging processes capable of stabilizing the converter slag in a short time. The converter slag is dipped into alkali aqueous solution after heating at low temperature. It was subsequently ground to a grain size of 75 ${\mu}{\textrm}{m}$ , inner 30 percent of OPC. The properties of mortar and concrete using the blended cement were determined. As a result, it has become apparent that the expansion was reduced and long term compressive strength was increased while that at early ages was not so remarkable. The hydration exotherm rate was lower than that of the OPC.

• Corrosion Science and Technology
• /
• v.2 no.4
• /
• pp.178-182
• /
• 2003

Slow Strain Rate Tests (SSRT) were carried out to investigate the effect of environmental factors on the Stress Corrosion Cracking (SCC) susceptibility of 3.5NiCrMoV steels used in discs for Low-Pressure (LP) steam turbines in electric power generating plants. The influences of dissolved oxygen on the stress corrosion cracking of turbine steel were studied, For this purpose, specimens were strained at variously oxygenated conditions at $150^{\circ}C$ in pure water. When the specimen was strained with $1{\times}10^{-7}s^{-1}$ at $150^{\circ}C$ in pure water, increasing concentration of dissolved oxygen decreased the elongation and the UTS. The corrosion potential and the corrosion rare increased as the amounts of dissolved oxygen increased. The increase of the SCC susceptibility of the turbine steel in a highly dissolved oxygen environment is due to the non protectiveness of the oxide layer on the turbine steel surface and the increase of the corrosion current. These results clearly indicate that oxygen concentration increases Stress Corrosion Cracking susceptibility in turbine steel at $150^{\circ}C$.

• Progress in Superconductivity and Cryogenics
• /
• v.4 no.1
• /
• pp.30-34
• /
• 2002

In this Paper, Insulation of current lead in the conduction-cooled DC reactor for the 1.2kV class 3 high-Tc superconducting fault current limiter(SFCL) is studied. Thermal link which conducts heat energy but insulates electrical energy is selected as a insulating device for the current lead in the conduction-cooled Superconducting DC reactor. It consists of oxide free copper(OFC) sheets, Polyimide films, glass fiberglass reinforced Plastics (GFRP) plates and interfacing material such an indium or thermal compound. Through the test of dielectric strength in L$N_2$, polyimide film thickness of 125 ${\mu}{\textrm}{m}$ is selected as a insulating material. Electrical insulation and heat conduction are contrary to each other. Because of low heat conductivity of insulator and contact area between electrical insulator and heat conductor, thermal resistance of conduction-cooled system is increased. For the reducing of thermal resistance and the reliable contact between Polyimide and OFC, thermal compound or indium can be used As thermal compound layer is weak layer in electrical field, indium is finally selected for the reducing of thermal resistance. Thermal link is successfully passed the test. The testing voltage was AC 2.5kVrms and the testing time was 1 hour.

• Proceedings of the KIEE Conference
• /
• 1996.07c
• /
• pp.1660-1662
• /
• 1996

Superconducting current lead is one of the promising applications of the oxide high-Tc superconductors, because they have the advantage of decreasing heat conduction to low temperature region, comparing with a conventional cooper alloy lead. High critical current density is a key factor for the applications such as current lead. $(Bi,Pb)_{2}Sr_{2}Ca_{2}Cu_{3}O_{x}$ high Tc superconductor hase been investigated in terms of critical current density. Bi-2223 superconducting current lead made by CIP and solid state sintering process. Bi-2223 current lead that heat treated at $836\;^{\circ}C$ for 240 h in 1/13 $PO_2$ had over $500\;A/cm^2$ of critical current density at 77K. We knew that the superconducting properties of tube type current leads were better than rods type of them. And we investigated the relation of Bi-2223 formation and heat treatment condition by XRD and SEM analysis.

• Journal of Advanced Marine Engineering and Technology
• /
• v.23 no.3
• /
• pp.360-368
• /
• 1999

The paper describes spectroscopic characteristics of plasma induced in the pulsed YAG laser welding of alloys containing a large amount of volatile elements. The authors have conducted the spectroscopic analyses of laser induced Al-Mg alloys plasma in the air and argon atmosphere. In the air environment the identified spectra were atomic lines of Al, Mg, Cr, Mn, Cu, Fe and Zn and singly ionized Mg lines as well as the intense molecular spectra of ALO and MgO formed by chemi-cal reactions of evaporated Al and Mg atoms from the pool surface with oxygen in the air. In argon atmosphere MgO and AlO spectra vanished but AlH spectrum was detected. the hydrogen source was presumable hydrogen dissolved in the base metals water absorbed on the surface oxide layer or $H_2$ and $H_2O$ in the shielding gas. The resonant lines of Al and Mg were strongly self-absorbed in particular self-absorption of the Mg line was predominant. These results show that the laser induced plasma was made of metallic vapor with relatively low temperature and high density.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.99-99
• /
• 2010

Recently, amorphous transparent oxide semiconductors (TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). The TOS TFTs using a-IGZO channel layers exhibit a high electron mobility, a smooth surface, a uniform deposition at a large area, a high optical transparency, a low-temperature fabrication. In spite of many advantages of the sputtering process such as better step coverage, good uniformity over large area, small shadow effect and good adhesion, there are not enough researches about characteristics of a-IGZO thin films. In this study, therefore, we focused on the electrical properties of a-IGZO thin films as a channel layer of TFTs. TFTs with the a-IGZO channel layers and Y2O3 gate insulators were fabricated. Source and drain layers were deposited using ITO target. TFTs were deposited on unheated non-alkali glass substrates ($5cm{\times}5cm$) with a sintered ceramic IGZO disc (3 inch $\varnothing$, 5mm t), Y2O3 disc (3 inch $\varnothing$, 5mm t) and ITO disc (3 inch $\varnothing$, 5mm t) as a target by magnetron sputtering method. The O2 gas was used as the reactive gas. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of a-IGZO thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.341.1-341.1
• /
• 2014

In the advanced material for the next generation display device, transparent amorphous oxide semiconductors (TAOS) are promising materials as a channel layer in thin film transistor (TFT). The TAOS have many advantages for large-area application compared with hydrogenated amorphous silicon TFT (a-Si:H) and organic semiconductor TFT. For the reasonable characteristics of TAOS, The a-IGZO has the excellent performances such as low temperature fabrication (R.T~), high mobility, visible region transparent, and reasonable on-off ratio. In this study, we investigated how the electric characteristics and physical properties are changed as various oxygen ratio when magnetron sputtering. we analysis a-IGZO film by AFM, EDS and I-V measurement. decreasing the oxygen ratio, the threshold voltage is shifted negatively and mobility is increasing. Through this correlation, we confirm the effect of oxygen ratio. We fabricated the bottom-gate a-IGZO TFTs. The gate insulator, SiO2 film was grown on heavily doped silicon wafer by thermal oxidation method. a-IGZO channel layer was deposited by RF magnetron sputtering. and the annealing condition is $350^{\circ}C$. Electrode were patterned Al deposition through a shadow mask(160/1000 um).

• Proceedings of the KIEE Conference
• /
• 2002.07c
• /
• pp.1482-1484
• /
• 2002

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCI (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures $({\leq}300^{\circ}C)$, the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• Journal of the Korean institute of surface engineering
• /
• v.23 no.1
• /
• pp.34-43
• /
• 1990

Al-Si piston alloys such as AlS10CuMg have been anodized to examine apossibility of forming a hard film aat relatively higher temperatures compard with those in conventional sulfuric acid processes. Three types of electrolytes have been employed in this study ; electrolyte A(15% H2SO4, $0^{\circ}C$), electrolyte B(12% H2SO4, 1% oxalic, $10^{\circ}C$), electrolyte C(tartaric acid 125g/L+oxalic 75g/L+aluminum sulfate 225g/L, $25^{\circ}C$). Hard anodisine process in electrolyte B at a current density of 1.54A/dm2 produced a harder film of VHN 396 at a relatibely low film forming voltage compared with those obtained in other electrolyte at equivalent current density. A liner relationship between hardness and abrasion resistance exists for Al-Si piston alloys. The hardness of anodized film decreasees with increasing silicon content in Al-Si alloys and also with bath temperature. The film hardeness of Na-modified alloy os higher than that of P-modified alloy due to its finer microstructre. The film on the silicon phase in Al-Si alloys is observed to be formed by lateral growth of oxide film nucleated at surroundings.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.108-108
• /
• 2011

Organometallic complexes containing unpaired spins, such as metalloporphyrin or metallophthalocyanine, have extensively studied with increasing interests of their promising model systems in spintronic applications. Additionally, the use of these complexes as an acceptor molecule in chemical sensors has recently received great attentions. In this presentation, we have investigated adsorption of nitric oxide (NO) molecules at Co-porphyrin molecules on Au(111) surfaces with scanning tunneling microscopy and spectroscopy at low temperature. At the location of Co atom in Co-porphyrin molecules, we could observe a Kondo resonance state near Fermi energy in density of states (DOS) before exposing NO molecules and the Kondo resonance state was disappeared after NO exposing because the electronic spin structure of Co-porphyrin were modified by forming a cobalt-NO bonding. Furthermore, we could locally control the chemical reaction of NO dissociations from NO-CoTPP by electron injections via STM probe. After dissociation of NO molecules, the Kondo resonance state was recovered in density of state. With a help of density functional theory (DFT) calculations, we could understand that the modified electronic structures for NO-Co-porphyrin could be occurred by metal-ligand hybridization and the dissociation mechanisms of NO can be explained in terms of the resonant tunneling process via molecular orbitals.