• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.25-28
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• 1999

Metal ferroelectric semiconductor Field Effect- Transistors(MFSFET) with various gate electrodes, that are aluminum, platinum and poly -Si, using LiNbO$_3$/Si(100) structures were fabricated and the properties of the FETs have been discussed. The drain current of the state of FET with Pt electrode was more than 3 orders of magnitude larger than the state current at the same gate voltage of 1.5 V, 7.rich means the memory operation of the MFSFET. A write voltage as low as about $\pm$4 V, which is applicable to low power integrated circuits, was used for polarization reversal. The retention properties of the FET using Al electrode were quite good up to about 10$^3$s and using Pt electrode remained almost the same value of its initial value over 2 days at room temperature.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.151-151
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• 2010

In this paper, the electrically properties of nonvolatile memory (NVM) using multi-stacks gate insulators of oxide-nitride-oxynitride (ONOn) and active layer of the low temperature polycrystalline silicon (LTPS) were investigated. From hydrogenated amorphous silicon (a-Si:H), the LTPS thin films with high crystalline fraction of 96% and low surface's roughness of 1.28 nm were fabricated by the metal induced crystallization (MIC) with annealing conditions of $650^{\circ}C$ for 5 hours on glass substrates. The LTPS thin film transistor (TFT) or the NVM obtains a field effect mobility of ($\mu_{FE}$) $10\;cm^2/V{\cdot}s$, threshold voltage ($V_{TH}$) of -3.5V. The results demonstrated that the NVM has a memory window of 1.6 V with a programming and erasing (P/E) voltage of -14 V and 14 V in 1 ms. Moreover, retention properties of the memory was determined exceed 80% after 10 years. Therefore, the LTPS fabricated by the MIC became a potential material for NVM application which employed for the system integration of the panel display.

• Bulletin of the Korean Chemical Society
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• 제11권6호
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• pp.560-563
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• 1990

A.c. susceptibility for $Bi_{1.4}Pb_{0.6}Sr_2Ca_2Cu_{3.6}O_x$ superconductor is measured as a function of temperature at different value of a.c. magnetic field amplitude. Two transition steps are attributed to the intergranular and intragranular properties. Based on Bean's critical state model, intergranular critical current density, $J_c^{gb}$ (11 $A/cm^2$ at 77 K) and intragranular critical current density, $J_c^g (7{\times}10^3\;A/cm^2$ at 100 K) are estimated. The low values of $J_c^{gb}$and $J_c^g$ reflect a poor nature of coupling between grains and the low pinning force density of intragrain in $Bi_{1.4}Pb_{0.6}Sr_2Ca_2Cu_{3.6}O_x$ superconductor.

• 한국산업융합학회 논문집
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• 제23권6_2호
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• pp.1007-1014
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• 2020

IMO(International Maritime Organization) continues to strengthen environmental regulations on exhaust gases such as CO2, NOx, SOx. As for sulfur oxides, from 1 January 2020, all ships on international voyages must use fuel with a sulfur content of 0.5% or less. Or, it is obligatory to use an exhaust gas treatment device that has the same effect. Shipping companies are using low-sulfur oil, replacing them with LNG fuel, or installing scrubbers that suppress sulfur oxide emissions. In the case of ships using bunker C oil, the load on the engine is lower when entering and departing, so the exhaust gas pressure is lowered and the scrubber cannot be properly utilized. Therefore, diesel oil with low sulfur content is used when entering and leaving the coast. When diesel oil is used, exhaust gas is directly discharged through the control system and piping system, and when bunker C oil is used, sulfur oxides are reduced by scrubbers through other control systems and piping systems to discharge exhaust gas. Accordingly, a company has developed a system called a three-way damper valve that can control exhaust gas emissions while integrating these two control systems and piping systems into one. In this study, the control characteristics of the integrated exhaust gas control system and structural safety against external loads in a high-temperature exhaust gas environment were reviewed.

• 센서학회지
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• 제32권4호
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• pp.207-212
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• 2023

H₂S is a toxic and harmful gas, even at concentrations as low as hundreds of parts per million; thus, developing an H₂S sensor with excellent performance in terms of high response, good selectivity, and fast response time is important. In this study, an H₂S sensor with a high response and fast response time, consisting of a sensing material (SnO₂), an electrode, a temperature sensor, and a micro-heater, was developed using micro-electro-mechanical system technology. The developed H₂S sensor with a micro-heater (circular type) has excellent H₂S detection performance at low H₂S concentrations (0-10 ppm), with quick response time (<16 s) and recovery time (<65 s). Therefore, we expect that the developed H₂S sensor will be considered a promising candidate for protecting workers and the general population and for responding to tightened regulations.

• 대한환경공학회지
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• 제34권6호
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• pp.397-405
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• 2012

본 연구는 휴대폰을 비롯한 전자제품 세척공정과 악취유발물질 등에서 배출되는 휘발성 유기화합물(VOCs)을 경제적이고 안전하게 제거하는 기술에 대한 성능평가를 위해 수행되었다. 대부분의 산업공정에서는 VOCs 제거를 위해 활성탄 흡착탑을 가장 많이 사용하고 있으나 제거효율이 낮아 악취배출시설의 허용기준을 만족할 수 없고, 고농도 유기용제 유입 시 화재위험이 있다. 지금까지 연구되어진 금속산화물 촉매는 VOCs 제거효율이 최소 $220^{\circ}C$ 근방에서 50% 이하였다. 본 연구에서는 이 보다 훨씬 낮은 온도인 $100^{\circ}C$ 이하에서 촉매산화가 시작되었고, 약 $160^{\circ}C$ 근방에서 VOCs가 95% 제거됨을 확인할 수 있었다. 적정처리가 가능한 범위는 공간속도가 $6,000hr^{-1}$ 이하일 때 최적의 제거효율을 나타내며, VOCs 유입농도가 200 ppm에서 4,000 ppm 사이, 촉매제어 온도가 $150{\sim}200^{\circ}C$에서 90~99%로 높은 제거효율을 보였고, VOCs 유입농도가 1,000 ppm 이상일 경우에는 자체반응열로 인해 외부열원이 필요 없었다. 본 저온촉매를 적용할 경우 LNG 와 LPG를 연료원으로 사용하는 RTO/RCO방식 대비 설치비는 50%, 연료비는 75% 감소되어 경제성이 높고 온실가스 발생량도 줄일 수 있었다. 그리고 황화합물과 산성가스에 대해서는 피독이 있는 것으로 확인되었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.53.2-53.2
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• 2010

지금까지 능동 구동 디스플레이의 TFT backplane에 사용하고 있는 채널 물질로는 수소화된 비정질 실리콘(a-Si:H)과 저온 폴리실리콘(low temperature poly-Si)이 대표적이다. 수소화된 비정질 실리콘은 TFT-LCD 제조에 주로 사용되는 물질로 제조 공정이 비교적 간단하고 안정적이며, 생산 비용이 낮고, 소자 간 특성이 균일하여 대면적 디스플레이 제조에 유리하다. 그러나 a-Si:H TFT의 이동도(mobility)가 1 cm2/Vs이하로 낮아 Full HD 이상의 대화면, 고해상도, 고속 동작을 요구하는 UD(ultra definition)급 디스플레이를 개발하는데 있어 한계 상황에 다다르고 있다. 또한 광 누설 전류(photo leakage current)의 발생을 억제하기 위해서 화소의 개구율(aperture ratio)을 감소시켜야하므로 패널의 투과율이 저하되고, 게이트 전극에 지속적으로 바이어스를 인가 시 TFT의 문턱전압(threshold voltage)이 열화되는 문제점을 가지고 있다. 문제점을 극복하기 위한 대안으로 근래 투명 산화물 반도체(transparent oxide semiconductor)가 많은 관심을 얻고 있다. 투명 산화물 반도체는 3 eV 이상의 높은 밴드갭(band-gap)을 가지고 있어 광 흡수도가 낮아 투명하고, 광 누설 전류의 영향이 작아 화소 설계시 유리하다. 최근 다양한 조성의 산화물 반도체들이 TFT 채널 층으로의 적용을 목적으로 활발하게 연구되고 있으며 ZnO, SnO2, In2O3, IGO(indium-gallium oxide), a-ZTO(amorphous zinc-tin-oxide), a-IZO (amorphous indium-zinc oxide), a-IGZO(amorphous indium-galliumzinc oxide) 등이 그 예이다. 이들은 상온 또는 $200^{\circ}C$ 이하의 낮은 온도에서 PLD(pulsed laser deposition)나 스퍼터링(sputtering)과 같은 물리적 기상 증착법(physical vapor deposition)으로 손쉽게 증착이 가능하다. 특히 이중에서도 a-IGZO는 비정질임에도 불구하고 이동도가 $10\;cm2/V{\cdot}s$ 정도로 a-Si:H에 비해 월등히 높은 이동도를 나타낸다. 이와 같이 a-IGZO는 비정질이 가지는 균일한 특성과 양호한 이동도로 인하여 대화면, 고속, 고화질의 평판 디스플레이용 TFT 제작에 적합하고, 뿐만 아니라 공정 온도가 낮은 장점으로 인해 플렉시블 디스플레이(flexible display)의 backplane 소재로서도 연구되고 있다. 본 실험에서는 rf sputtering을 이용하여 증착한 a-IGZO 박막에 대하여 열처리 조건 변화에 따른 a-IGZO 박막들의 광학적, 전기적 특성변화를 살펴보았고, 이와 더불어 a-IGZO 박막을 TFT에 적용하여 소자의 특성을 분석함으로써, 열처리에 따른 Transfer Curve에서의 우리가 요구하는 Threshold Voltage(Vth)의 변화를 관찰하였다.

• Asian-Australasian Journal of Animal Sciences
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• 제18권8호
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• pp.1182-1187
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• 2005

A flock of Arbor Acres chickens were reared in cages and provided with high energy pelleted feed. At 14 d of age, a total of 350 birds were separated into 3 groups randomly as follows: 100 birds were exposed to ambient temperature of 20$^{\circ}C$ as a control group, 150 birds were exposed to lower ambient temperature of 11$^{\circ}C$ to induce ascites (group I), and another group of 100 birds were exposed to lower ambient temperature of 11$^{\circ}C$ and fed diet containing 1% L-arginine for ascitic prophylactic treatment (group II). Blood and tissue samples (lung and liver) were collected from chickens at 3, 4, 5, 6 and 7 wk of age subsequently, to analyze the concentration and activities of free radicals, mononaldehyde (MDA), superoxide dismutase (SOD), Nitric Oxide (NO) and Nitric oxide synthase (NOS). The results showed that the prevalence of ascites in the control, group I and group II was 3%, 9.33% and 3% respectively (p<0.01). The concentration of free radicals in the lungs of 3 wks old preascitic broilers in group I was significantly higher than in the corresponding control group (p<0.05). The concentrations of free radicals in lung and liver in the 7 wk period, and that of NO and SOD in the plasma were significantly lower in group I than in the control group (p<0.01). However, the accumulated MDA contents in group I were higher than in the control group and group II (p<0.05), respectively. In the same way, the activity of NOS in group II was higher than both group I and control group (p<0.01) during the 7 wk period. There was no significant difference between SOD activities of group II and the control group (p>0.05), and also insignificant difference between NOS in group I and the control group (p>0.05). The results of this study indicate that there was a significant decrease in the concentration of MDA in group II. On the other hand, the concentration of free radicals decreased and MDA concentration increased in group I during the 7 wk period. The reduction in concentration of MDA in group II, following arginine supplementation may be associated with the scavenging activity of NO.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• 한국자기학회지
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• 제12권5호
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• pp.195-200
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• 2002

각종 산화물을 첨가하여 Co$_2$Z type Ba-ferrite의 저온소결에 관하여 연구하였다. Co$_2$Z type Ba-ferrite 상은 2회 하소과정을 통하여 얻을 수 있었으며, 생성된 상의 XRD peaks는 일부 minor peaks 제외하고는 standard peaks와 거의 일치하였다 제조된 분말은 저온소결을 위하여 ZnO-B$_2$O$_3$ glass리 단독 첨가 및 CuO 또는 Bi$_2$O$_3$와 복합 첨가하였으며, 또한 ZnO-Bi$_2$O$_3$ glass를 단독 첨가하였다. 소결은 900~100$0^{\circ}C$에서 수행하였다. ZnO-B$_2$O$_3$ glass의 단독 첨가 시, 첨가량이 7.5 wt%일 때 가장 높은 수축거동을 나타내었다. ZnO-Bi$_2$O$_3$ glass와 CuO 또는 Bi$_2$O$_3$를 복합 첨가하였을 때, glass를 단독 첨가하였을 경우보다 수축률이 급격히 증가되었다. 또한 ZnO-Bi$_2$O$_3$ glass를 단독 첨가한 시편의 수축률과 초기 투자율은 ZnO-B$_2$O$_3$ glass를 단독 첨가한 시편보다 높은 값을 나타내었다.