• Korean Journal of Materials Research
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• v.9 no.4
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• pp.414-418
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• 1999

Typical metal oxide thin films having optical and electrical properties are widely used as inorganic functional materials. Liquid phase deposition(LPD) method, a new low temperature process, has been developed for the several advantages of no vacuum system, low cost, high throughput, and low processing temperature(<$50^{\circ}C$). Silica powder was added to 40wt% hydrofluoro-silicic acid($H_2$SiF\ulcorner) to obtain an immersing solution of silica-saturated hydrofluorosilicic acid solution. Boric acid solution was continuously added in the range from 0 to 0.05M to prepare supersaturated hydrofluorosilicic acid solution. LPD $SiL_2$film was formed with the variation of added amount of $H_2$O. The SiO$_2$thin film could be prepared from hydrofluorosilicic acid by LPD method. The thickness of LPD $_SiO2$film was influenced by the boric acid concentration and added amount of $H_2$O. Silicon in thin film existed as SiF\ulcorner by Raman spectrum.

• Tribology and Lubricants
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• v.12 no.3
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• pp.48-54
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• 1996

Examined in this paper, is the effect of B$_{4}$C addition on the frictional characteristics of Cu-Sn based sintered friction materials. For the specimens 1wt%, 2wt% and 4wt% of B$_{4}$C were added into the reference material. A pin-on-disk type friction tester was used to,measure the friction torque with respect to the surface temperature and sliding distance. Wear mechanism of each specimen is analyzed in the view point of the oxide film formation. The specimen containing 4wt% of B$_{4}$C showed stable friction and low wear since the oxide film was sustained up to higher surface temperature ranges.

• Ceramist
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• v.22 no.1
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• pp.96-106
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• 2019

Semiconducting carbon-based nanomaterials including single-walled carbon nanotubes(SWCNTs), multi-walled CNT(MWCNTs), graphene(GR), graphene oxide(GO), and reduced graphene oxide(RGO), are very promising sensing materials due to their large surface area, high conductivity, and ability to operate at room temperature. Despite of these advantages, the semiconducting carbon-based nanomaterials intrinsically possess crucial disadvantages compared with semiconducting metal oxide nanomaterials, such as relatively low gas response, irreversible recovery, and poor selectivity. Therefore, in this paper, we introduce a variety of strategies to overcome these disadvantages and investigate principle parameters to improve gas sensing performances.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.190-192
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• 2007

A neutral beam system has been developed to produce hyperthermal neutral beams composed of indium, tin, and oxygen atoms. Using these hyper thermal neutral beams with energies in the range of tens of eV, high quality indium-tin oxide (ITO) thin films have been obtained on glass substrates at room temperature. The optical transmittance of the films is higher than 85% at a wavelength of 550 nm and the electrical resistivity is lower than $1{\times}10^{-3}{\Omega}cm$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.302.1-302.1
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• 2016

Solution-processed amorphous metal-oxide thin-film transistors (TFTs) are considered as promising candidates for the upcoming transparent and flexible electronics due to their transparent property, good performance uniformity and possibility to fabricate at a low-temperature. In addition, solution processing metal oxide TFTs may allow non-vacuum fabrication of flexible electronic which can be more utilizable for easy and low-cost fabrication. Recently, for high-mobility oxide TFTs, multi-layered oxide channel devices have been introduced such as superlattice channel structure and heterojunction structure. However, only a few studies have been mentioned on the bias illumination stress in the multi- layered oxide TFTs. Therefore, in this research, we investigated the effects of bias illumination stress in solution-processed bilayer oxide TFTs which are fabricated by the deep ultraviolet photochemical activation process. For studying the electrical and stability characteristics, we implemented positive bias stress (PBS) and negative bias illumination stress (NBIS). Also, we studied the electrical properties such as field-effect mobility, threshold voltage ($V_T$) and subthreshold slop (SS) to understand effects of the bilayer channel structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.421.1-421.1
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• 2016

We studied indium-doped zinc oxide (IZO) film grown by atomic layer deposition (ALD) as transparent conductive oxide (TCO). A variety of TCO layer, such as ZnO:Al (AZO), InSnO2(ITO), Zn (O,S) etc, has been grown by various method, such as ALD, chemical vapor deposition (CVD), sputtering, laser ablation, sol-gel technique, etc. Among many deposition methods, ALD has various advantages such as uniformity of film thickness, film composition, conformality, and low temperature deposition, as compared with other techniques. In this study, we deposited indium-doped zinc oxide thin films using diethyl[bis(trimethylsilyl)amido]indium [Et2InN(TMS)2] as indium precursor, DEZn as zinc precursor and H2O as oxidant for ALD and investigated the optical and electrical properties of IZO films. As an alternative, this liquid In precursor would has several advantages in indium oxide thin-film processes by ALD, especially for low resistance indium oxide thin film and high deposition rate as compared to InCp, InCl3, TMIn precursors etc. We found out that Indium oxide films grown by Et2InN(TMS)2 and H2O precursor show ALD growth mode and ALD growth window. We also found out the different growth rate of Indium oxide as the substrate and investigated the effect of the substrate on Indium oxide growth.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.84.1-84.1
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• 2011

Typical solid oxide fuel cells (SOFCs) have limited applications because they operate at high temperature due to low ionic conductivity of electrolyte. Thin film solid oxide fuel cell with yttria stabilized zirconia (YSZ) electrolyte is developed to decrease operating temperature. Pt/YSZ/Pt thin film SOFC was fabricated on anodic aluminum oxide (AAO). The crystalline structure of YSZ electrolyte by sputter is heavily depends on the roughness of porous Pt layer, which results in pinholes. To deposit YSZ electrolyte without pinholes and electrical shortage, it is necessary to deposit smoother and denser layer between Pt anode layer and YSZ layer by sputter. Atomic Layer Deposition (ALD) technique is used to deposit pre-YSZ layer, and it improved electrolyte quality. 300nm thick Bi-layered YSZ electrolyte was successfully deposited without electrical shortage.

• Korean Journal of Metals and Materials
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• v.47 no.2
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• pp.99-106
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• 2009

The high temperature corrosion properties of heat resistant steels were investigated in oxidation atmosphere including sulfur dioxide. The heat resistant steels of T22, T92, T122, T347HFG and T304H were evaluated at 620, $670^{\circ}C$ for 400 hours. The corrosion rates showed a decreasing tendency while chrome contents of those steels increased from 2 mass.% to 19 mass.%. The in crease in temperature increasement has an more effect on the corrosion rates of low chrome steels than high chrome steels. The weight gains of T22, T92, T304H at $670^{\circ}C$ were 3.7, 1.65, 1.23 times compared with those at $620^{\circ}C$. The external scale formed on T22 was composed of hematite, magnetite and Fe-Cr spinel and internal layer including iron oxide mixed with sulfide. The scales formed on T92, T122, T304H consisted of an outer layer of hematite and inner layer of chrome oxide and hematite. The proportion of chrome oxide at inner layer was increased when the chrome contents in heat resistant steels were increased.

• Journal of the Korean Ceramic Society
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• v.35 no.6
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• pp.529-534
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• 1998

Agglomeration-free indium oxide particles were produced by ultrasonic pyrolysis of indium nitrate(3 hy-drate) solution. Th mean size of particles was increased from 3 $\mu\textrm{m}$ to 11$\mu\textrm{m}$ with increasing intial con-centrations of indium nitrate from 0.05mol% to 4.83 mol% When the input rate of indium nitrate solution was increased from 0.1 cm3/min to 0.8cm3/min the size of particles remained same and only the pro-duction rate of particles was increased. At 300$^{\circ}C$ the particles were white color with low crystallinity. But the color turned into yellow with increasing reaction temperature. The change of particle size was not ob-served with increasing temperatuer up to 700$^{\circ}C$ IR spectrum and TGA analysis confirmed that the purity of indium oxide was increased with temperature of reaction.

• Journal of Sensor Science and Technology
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• v.26 no.1
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• pp.50-55
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• 2017

The measurement of absolute humidity of gases is essential in many industries. The effect of temperature on aluminum oxide and chilled mirror dew-point hygrometers is investigated. The temperature of laboratory, pipe line, and sensor is varied and the dew point is measured by two different aluminum oxide hygrometers. In all cases, the dew point of hygrometers is increased as the temperature is elevated. The reason behind this observation is due to desorption of water from the inside of pipe line and/or sensor surroundings at elevated temperature that result in the increase of the absolute humidity. Moreover, the sensor itself shows a certain degree of temperature dependency in sensing the humidity especially at low temperature. It is also studied that chilled mirror dew-point hygrometer may indicate a higher dew point than the reference at high temperature because the cooling capability of mirror is decreased at high temperature. Our study will provide evidences in the incorporation of the temperature effect as uncertainty factors in the standard calibration procedure for dew point hygrometers.