• Transactions on Electrical and Electronic Materials
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• 제9권6호
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• pp.247-250
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• 2008

Hafnium dioxide ($HfO_2$) thin film as a gate dielectric for organic thin film transistors is prepared by plasma enhanced atomic layer deposition (PEALD). Mostly crystalline of $HfO_2$ film can be obtained with oxygen plasma and with water at relatively low temperature of $200^{\circ}C$. $HfO_2$ was deposited as a uniform rate of $1.2\;A^{\circ}$/cycle. The pentacene TFT was prepared by thermal evaporation method with hafnium dioxide as a gate dielectric. The electrical properties of the OTFT were characterized.

• 한국재료학회지
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• 제12권6호
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• pp.476-481
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• 2002

In this work, we report on the synthesis of the GaN powders from gallium oxide hydroxide (GaOOH) powders and on the structural and optical properties of them. Simple heat treatment of GaOOH in the flow of $NH_3$ gas leads to the formation of submicron hexagonal GaN powders even at the low reaction temperature of $800^{\circ}C$. XRD measurements show that the powders obtained are the single phase GaN. EDS, FTIR, and PL measurements indicate the oxygen-associated characteristics. It is shown from the low temperature PL measurement on GaN powders synthesized at $1000^{\circ}C$ that the shallow donor-acceptor recombination induced emission is more intense than the near band-edge excitonic emission.

• 한국표면공학회지
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• 제29권6호
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• pp.760-765
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• 1996

Silicon oxide thin films are prepared by plasma-enhanced CVD (PECVD) using 100kHz and 13.56MHz generators. Source gases are two sorts of mixture, tetramethoxysilane (TMOS) and oxygen, and tetramethylsilane (TMS) and oxygen. We investigate the effect of frequency on film properties of deposited films including mechanical properties. 100kHz PECVD process can deposit silicon oxide films at $23^{\circ}C$ at the power of 20W. X-ray photoelectron spectroscopy (XPS), infrared spectroscopy (IR) and ellipsometric measurements reveal that the structural quality of the films prepared both by 100kHz process and by 13.56MHz process are very like silicon dioxide. The 100kHz process is adequate for low temperature deposition of SiOx films.

• 한국재료학회지
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• 제14권5호
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• pp.353-357
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• 2004

The influences of the ozone oxidation, reaction temperature and NaOH equivalent ratio on the iron oxide formation were studied with fixed ferrous sulfate concentration(0.5M $FeSO_4$ㆍ$7H_2$O). Geothite($\alpha$-FeOOH) and/or Magnetite ($Fe_3$$O_4$) were synthesized depending on the reaction conditions. The characteristics of the synthesized powders were evaluated by XRD, SEM and quantitative phase analysis. The synthetic conditions to get Goethite were quite different from the results of Kiyama's and the Goethite was conveniently synthesized at low temperature and at low NaOH equivalent ratio.

• 한국전기전자재료학회논문지
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• 제13권2호
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• pp.125-130
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• 2000

Two step growth of reduced pressure chemical vapor eposition has been successfully developed to achieve in-situ phosphorus-doped silicon epilayers, and the characteristic evolution on their microstructures has been investigated using scanning electron microscopy, transmission electron microscopy, and secondary ion mass spectroscopy. The two step growth, which employs heavily in-situ P doped silicon buffer layer grown at low temperature, proposes crucial advantages in manipulating crystal structures of in-situ phosphorus doped silicon. In particular, our experimental results showed that with annealing of the heavily P doped silicon buffer layers, high-quality epitaxial silicon layers grew on it. the heavily doped phosphorus in buffer layers introduces into native oxide and plays an important role in promoting the dispersion of native oxides. Furthermore, the phosphorus doping concentration remains uniform depth distribution in high quality single crystalline Si films obtained by the two step growth.

• 한국표면공학회지
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• 제32권3호
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• pp.297-302
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• 1999

In situ measurement of infrared absorption spectra has been performed during low-temperature plasma-enhanced chemical vapor depositiion of silicon-oxide films using tetramethoxysilane as a silicon source. Several absorption bands due to the reactant molecules are clearly observed before deposition. In the plasma, these bands completely disappear at any oxygen mixing ratio. This result shows that most of the tetramethoxysilane molecules are dissociated in the rf plasma, even C-H bonds. Existence of Si-H bonds in vapor phase and/or on the film surface during deposition has been found by infrared diagnostics. We observed both a decrease in Si-OH absorption and an increase in Si-O-Si after plasma off, which means the dehydration condensation reaction continues after deposition. The rate of this reaction is much slower than the deposition ratio of the films.

• Journal of Biosystems Engineering
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• 제27권3호
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• pp.241-248
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• 2002

An electronic noses system including six metal oxide sensors was used to predict the characteristics of shelf-life of soybean curd. Soybean curd was stored at two different temperatures defined as low temperature(5$\^{C}$) and high temperature(25$\^{C}$). Resistance changes of the sensors were measured 13 times for 19 days at low temperature and 19 times for 120 hours at high temperature. Three different analytical methods such as graphical analysis(GA), principal component analysis(PCA), and cluster analysis(CA) were used to analyze sensors outputs. The ratio of resistance was decreased according to increasement of shelf-life. Using PCA it was possible to predict freshness and shelf-life time of soybean curds. Also, using CA it was possible to simplify an electronic nose system. Electronic nose system could be an efficient method to predict shelf-life and to evaluate quality in foods.

• Bulletin of the Korean Chemical Society
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• 제34권10호
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• pp.3059-3064
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• 2013

In this study transesterification of Triglycerides (TG) from Jatropha curcas oil (JCO) with methanol for production of biodiesel was investigated over cerium impregnated ZSM-5 catalysts. NaZSM-5 was synthesized in an alkaline medium and impregnated with cerium oxide by wet method using cerium nitrate as a source for cerium. They were characterized by X-ray diffraction (XRD), Thermogravimeteric analysis (TGA), $CO_2$-temperature programmed desorption, and $N_2$ adsorption/desorption analysis. XRD analysis showed decrease in intensity of the patterns with the increase in the ceria loading but crystallization of ceria to larger size is an evident for 10 and 15% loading. The optimal yield of transesterification process was found to be 90% under the following conditions: oil to methanol molar ratio: 1:12; temperature: $60^{\circ}C$; time: 1 h; catalyst: 5 wt %. Here the yield of fatty acid methyl ester (FAME) was calculated through $^1H$ NMR analysis. The investigation on catalyst loading, temperature, time and reusability illustrated that these ceria impregnated NaZSM-5's were found to be selective, recyclable and could yield biodiesel at low temperature with low methanol to oil ratio due to the presence of both Lewis and Bronsted basicity. Hence, from the above study it is concluded that ceria impregnated ZSM-5 could be recognized as a potential catalysts for biodiesel production in industrial processes.

• 한국세라믹학회지
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• 제53권5호
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• pp.469-477
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• 2016

The application of nanomaterials for electrodes of intermediate temperature solid oxide fuel cells (SOFC) is introduced. In conventional SOFCs, the operating temperature is higher than 1073 K, and so application of nanomaterials is not suitable because of the high degradation rate that results from sintering, aggregation, or reactions. However, by allowing a decrease of the operating temperature, nanomaterials are attracting much interest. In this review, nanocomposite films with columnar morphology, called double columnar or vertically aligned nanocomposites and prepared by pulsed laser ablation method, are introduced. For anodes, metal nano particles prepared by exsolution from perovskite lattice are also applied. By using dissolution and exsolution into and from the perovskite matrix, performed by changing $P_{O2}$ in the gas phase at each interval, recovery of the power density can be achieved by keeping the metal particle size small. Therefore, it is expected that the application of nanomaterials will become more popular in future SOFC development.

• 한국표면공학회지
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• 제52권6호
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• pp.306-309
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• 2019

Titanium (Ti) doped indium oxide (In₂O₃) films were deposited on glass substrates by RF magnetron sputtering and the films were rapid thermal annealed at 100, 200, and 300℃, respectively to investigate the influence of the rapid annealing on the opto-electrical performance of the films. The grain size of In₂O₃ (222) plane increased with annealing temperatures and their electrical resistivity decreased to as low as 8.86×10^-4 Ωcm at 300℃. The visible transmittance also improved from 77.1 to 79.5% when the annealing temperature increased. The optical band gap of the TIO films shifted from 4.010 to 4.087 eV with increases in annealing temperature from room temperature to 300℃. The figure of merit shows that the TIO films annealed at 300℃ had better optical and electrical performance than the other films prepared using lower-temperature or no annealing.