• Korean Journal of Materials Research
• /
• v.11 no.8
• /
• pp.647-654
• /
• 2001

Effects of final annealing temperature on the precipitate and oxidation were investigated for the Zr-lNb and Zr-lNb-lSn-0.3Fe alloys. The microstructure and oxidation of both alloys were evaluated for the optimization of final annealing process of these alloys in the annealing temperature regime of 450 to $800^{\circ}C$. The corrosion test was performed under steam at $400^{\circ}C$ for 270 days in a static autoclave. The oxide formed was identified by low angle X-ray diffraction method. The $\beta$-Zr was observed at annealing temperature above $600^{\circ}C$. Above $600^{\circ}C$, the precipitate area volume fraction of Zr-lNb and Zr-1Nb-lSn-0.3Fe alloys appeared to be increased with increasing the final annealing temperature. The corrosion resistance of Zr-lNb was higher than that of Zr- lNb-lSn-0.3Fe alloy. The corrosion rate of both alloys were accelerated due to the formation and growth of $\beta$-Zr with increasing the annealing temperature.

• Proceedings of the KWS Conference
• /
• 2002.10a
• /
• pp.612-619
• /
• 2002

The dynamic behavior of Al-Mg alloys plasma was very unstable and this instability was closely related to the unstable motion of keyhole during laser irradiation. The keyhole fluctuated both in size and shape and its fluctuation period was about 440 ${\mu}{\textrm}{m}$. This instability has been estimated to be caused by the evaporation phenomena of metals with different boiling point and latent heats of vaporization. Therefore, the authors have conducted the spectroscopic diagnostics of plasma induced in the pulsed YAG laser welding of Al-Mg alloys in air and argon atmospheres. In the air environment, the identified spectra were atomic lines of Al, Mg, Cr, Mn, Cu, Fe and Zn, and singly ionized Mg line, as well as strong molecular spectrum of AlO, MgO and AIH. It was confirmed that the resonant lines of Al and Mg were strongly self-absorbed, in particular in the vicinity of pool surface. The self-absorption of atomic Mg line was more eminent in alloys containing higher Mg. These facts showed that the laser-induced plasma was relatively a low temperature and high density metallic vapor. The intensities of molecular spectra of AlO and MgO were different each other depending on the power density of laser beam. Under the low power density irradiation condition, the MgO band spectra were predominant in intensity, while the AlO spectra became much stronger in higher power density. In argon atmosphere the band spectra of MgO and AlO completely vanished, but AlH molecular spectra was detected clearly. The hydrogen source was presumably the hydrogen solved in the base Metal, absorbed water on the surface oxide layer or H$_2$ and $H_2O$ in the shielding gas. The temporal change in spectral line intensities was quite similar to the fluctuation of keyhole. The time average plasma temperature at 1 mm high above the surface of A5083 alloy was determined by the Boltzmann plot method of atomic Cr lines of different excitation energy. The obtained electron temperature was 3, 280$\pm$150 K which was about 500 K higher than the boiling point of pure aluminum. The electron number density was determined by measuring the relative intensities of the spectra1lines of atomic and singly ionized Magnesium, and the obtained value was 1.85 x 1019 1/㎥.

• Transactions on Electrical and Electronic Materials
• /
• v.11 no.6
• /
• pp.261-265
• /
• 2010

In this paper, we attempt to improve the electrical characteristics of epoxy resin at high temperature (above $80^{\circ}C$) by adding magnesium oxide (MgO), which has high thermal conductivity. Scanning electron microscopy (SEM) of the dispersion of specimens with added MgO reveals that they are evenly dispersed without concentration. The dielectric breakdown characteristics of $SiO_2$ and MgO nanocomposites are tested by measurements at different temperatures to investigate the filler's effect on the dielectric breakdown characteristics. The dielectric breakdown strength of specimens with added $SiO_2$ decreases slowly below $80^{\circ}C$ (low temperature) but decreases rapidly above $80^{\circ}C$ (high temperature). However, the gradient of the dielectric breakdown strength of specimens with added MgO is slow at both low and high temperatures. The dielectric breakdown strength of specimens with 0.4 wt% $SiO_2$ is the best among the specimens with added $SiO_2$, and that of specimens with 3.0 wt% and 5.0 wt% MgO is the best among those with added MgO. Moreover, the dielectric strength of specimens with 3.0 wt% MgO at high temperatures is approximately 53.3% higher than that of specimens with added $SiO_2$ at $100^{\circ}C$, and that of specimens with 5.0 wt% of MgO is approximately 59.34% higher under the same conditions. The dielectric strength of MgO is believed to be superior to that of $SiO_2$ owing to enhanced thermal radiation because the thermal conductivity rate of MgO (approximately 42 $W/m{\cdot}K$) is approximately 32 times higher than that of $SiO_2$ (approximately 1.3 $W/m{\cdot}K$). We also confirmed that the allowable breakdown strength of specimens with added MgO at $100^{\circ}C$ is within the error range when the breakdown probability of all specimens is 40%. A breakdown probability of up to 40% represents a stable dielectric strength in machinery and apparatus design.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.194-194
• /
• 2008

Lead oxide based ceramics, represented by PZT, are the most widely used materials for piezoelectric actuators, sensors, and transducers due to their excellent piezoelectric properties. In particular, high-performance multilayered piezoelectric ceramics for advanced electronic components have drawn great attention. In order to develop piezoelectric ceramics capable of being sintered at low temperature for multilayer piezoelectric device applications, the effect of CuO additions on the microstructures and electromechanical properties of the 0.4Pb$(Mg_{1/3}Nb_{2/3})O_3-0.25PbZrO_3-0.35PbTiO_3$ ceramics was investigated. The samples with CuO addition were synthesized by ordinary sintering technique. X-ray diffractions indicated that all samples formed a single phase perovskite structure. The addition of CuO improved the sinterability of the samples and caused an increase in the density and grain size at low temperature. The optimum sintering temperature was lowered by CuO additions. Excellent piezoelectric and electromechanical responses, $d_{33}$ ~ 663 pC/N, $k_p$ ~ 0.72, were obtained for the samples of high density with 0.1 wt% CuO addition sintered at $1050^{\circ}C$ for 4 h in air. These results show that the piezoelectric properties of PMNZT ceramics can be improved by controlling the microstructure and this system is potentially a good candidate as multilayer piezoelectric device for a wide range of electro-mechanical transducer applications.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.23 no.6
• /
• pp.302-308
• /
• 2013

In this study, we report the synthesis and characteristics of gallium oxide ($Ga_2O_3$) nanoparticles prepared by the polymerized complex method. $Ga_2O_3$ nanoparticles were synthesized using $Ga(NO_3)_3$, ethylene glycol, and citric acid as the starting materials at a low temperature of $500{\sim}800^{\circ}C$. The temperature of the weight reduction by the loss of organic precursor was revealed using TG-DTA analysis. The crystal structural change of $Ga_2O_3$ nanoparticles by the annealing process was investigated by XRD analysis. The morphologies and the size distributions of $Ga_2O_3$ nanoparticles were analyzed using SEM.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.26 no.10
• /
• pp.841-850
• /
• 2015

With the rapid progress of electronics and radio communication technology, human enjoys greater freedom in information communication. However, EMW(Electro-Magnetic Wave) environments have become more complicate and difficult to control. Thus, international organizations, such as the American National Standard Institution(ANSI), Federal Communications Commission(FCC), the Comite Internationale Special des Perturbations Radio Electrique(CISPR), etc, have provided standard for controlling the EM wave environments and for the countermeasure of the electromagnetic compatibility(EMC). In this paper, fabrication of the smart EMW absorber which has heat radiating function and high performance absorption abilities were suggested. Furthermore, we prospected future smart EMW absorbers. The designed smart EMW absorber is fabricated following process. Firstly, we applied high temperature heat treated to a mixture of Iron-oxide($Fe_2O_3$) and ceramics. Secondly, we applied low temperature heat treated to the mixture of heat treated material and a carbon material. Lastly, we made apertures on the absorber. The designed smart EM wave absorber has the absorption ability of more than 20 dB from 2 GHz to 2.45 GHz band, respectively. Thus, it is respected that these results can be applied as various EMC devices in electronic, communication, and controlling systems.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.170-170
• /
• 2010

Thin-film transistors (TFT) have become the key components of electronic and optoelectronic devices. Most conventional thin-film field-effect transistors in display applications use an amorphous or polycrystal Si:H layer as the channel. This silicon layers are opaque in the visible range and severely restrict the amount of light detected by the observer due to its bandgap energy smaller than the visible light. Therefore, Si:H TFT devices reduce the efficiency of light transmittance and brightness. One method to increase the efficiency is to use the transparent oxides for the channel, electrode, and gate insulator. The development of transparent oxides for the components of thin-film field-effect transistors and the room-temperature fabrication with low voltage operations of the devices can offer the flexibility in designing the devices and contribute to the progress of next generation display technologies based on transparent displays and flexible displays. In this thesis, I report on the dc performance of transparent thin-film transistors using amorphous indium tin zinc oxides for an active layer. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium tin zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium tin zinc oxides was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 4.17V and an on/off ration of ${\sim}10^9$ operated as an n-type enhancement mode with saturation mobility with $15.8\;cm^2/Vs$. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium tin zinc oxides for an active layer were reported. The devices were fabricated at room temperature by RF magnetron sputtering. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• Korean Journal of Materials Research
• /
• v.8 no.5
• /
• pp.424-428
• /
• 1998

Mn-Ni oxide thin films for NTC thermistor application were deposited on alumina substrates by using rf magnetron sputter. Effects of various substrate temperatures and annealing temperatures on the microstructure. crystal phase, resistivity and B constant were investigated. Microstructure of the films deposited below 178$^{\circ}C$ was fibrous microcrystalline and at 32$0^{\circ}C$and 40$0^{\circ}C$their microstructure was changed to columnar grain structure. After annealing at 90$0^{\circ}C$, the microstructure was transformed to equiaxed grain structure. Most of the phases were mixture of cubic spinel and $Mn_2O_2$ The crystal phase of the film deposited at 40$0^{\circ}C$ was changed to cubic spinel after annealing above 700"c. As the substrate temperature increased, the resistivity and B constant were greatly decreased, and these values become low and stable after annealing between $600^{\circ}C$and $700^{\circ}C$, All thin films deposited in the present study showed NTC thermistor characteristicsstics.

• Nuclear Engineering and Technology
• /
• v.27 no.4
• /
• pp.544-554
• /
• 1995

Pool boiling of dilute aqueous solutions of polyethylene oxide polymer has been experimentally investigated for the purpose of understanding the physical mechanisms of the suppression of vapor explosions in this polymer solution. Tn solid spheres of 22.2mm and 9.5mm-diameter ore heat-ed and quenched in the polymer solutions of various concentrations at 3$0^{\circ}C$. The results showed that minimum film boiling temperature($\Delta$ $T_{MFB}$) in this highly-subcooled liquid rapidly decreased from over $700^{\circ}C$ for pure water to about 15$0^{\circ}C$ as the polymer concentration was increased up to 300ppm for 22.2mm sphere, and it decreased to 35$0^{\circ}C$ for 9.5mm sphere. This large decrease of minimum film boiling temperature in this aqueous polymer solution may explain its ability to suppress spontaneous vapor explosions. Also, tests with applying a pressure wave showed that the vapor film behaved more stable against an external disturbance at higher polymer concentrations. These observations together with the experimental evidences of vapor explosion suppression in dilute polymer solutions suggest that the application of polymeric additives such as polyethylene oxide as low as 300ppm to reactor emergency coolant be considered to prevent or mitigate energetic fuel-coolant interactions during severe reactor accidents.s.

• Journal of the Mineralogical Society of Korea
• /
• v.32 no.2
• /
• pp.87-102
• /
• 2019

Pallancata Ag mine is located at the Ayacucho region 520 km southeast of Lima. The geology of mine area consists of mainly Cenozoic volcanic-intrusive rocks, which are composed of tuff, andesitic lava, andesitic tuff, pyroclastic flow, volcano clasts, rhyolite and quartz monzonite. This mine have about 100 quartz veins in tuff filling regional faults orienting NW, NE and EW directions. The Ag grades in quartz veins are from 40 to 1,000 g/t. Quartz veins vary from 0.1 m to 25 m in thickness and extend to about 3,000 m in strike length. Quartz veins show following textures including zonation, cavity, massive, breccia, crustiform, colloform and comb textures. Wallrock alteration features including silicification, sericitization, pyritization, chloritization and argillitization are obvious. The quartz veins contain calcite, chalcedony, adularia, fluorite, rutile, zircon, apatite, Fe oxide, REE mineral, Cr oxide, Al-Si-O mineral, pyrite, sphalerite, chalcopyrite, galena, electrum, proustite-pyrargyrite, pearceite-polybasite and acanthite. The temperature and sulfur fugacity ($f_{s2}$) of the Ag mineralization estimated from the mineral assemblages and mineral compositions are ranging from 118 to $222^{\circ}C$ and from $10^{-20.8}$ to $10^{-13.2}atm$, respectively. The relatively low temperature and sulfur-oxygen fugacities in the hydrothermal fluids during the Ag mineralization in Pallancata might be due to cooling and/or boiling of Ag-bearing fluids by mixing of meteoric water in the relatively shallow hydrothermal environment. The hydrothermal condition may be corresponding to an intermediate sulfidation epithermal mineralization.