• Journal of Conservation Science
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• v.6 no.1 s.7
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• pp.3-14
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• 1997

Twelve Punchong sherds collected in Hakbongni, Kongju where the well known iron-painted on white slip were manufactured from late 15C to early 16C were analyzed for their composition and microstructure. The composition of the body was analyzed by X-ray fluorescence and that of glaze by electron probe micro-analyzer. Microstructure was observed by optical microscope, polarizing microscope, EPMA, and X-ray diffractometer. The results of composition of body and glaze of Hakbongni were compared with those of Punchong from Yongsuri, Boryong which was close to Hakbongni. The composition of body and glaze of these two areas were compared by principal component analysis using SPSS program. Hakbongni bodies have higher silica and flux materials but lower alumina and their glaze have higher silica, soda, iron oxide but lower alumina, calcia. Hakbongni punchong itself is divided into two groups. Their glaze is lime type. There are many remnant minerals, such as quartz, large feldspar mass with partially melted surrounding area, albite, biotite, and iron-oxide. From such a microstructure we can assume that preparation of raw material was rather crude and firing temperature quite low. Iron-painted material is identified as Mg/Fe/Al spinel by composition analysis and XRD pattern.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.6
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• pp.1302-1307
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• 2006

This study describes the preparation of high-performance photocatalyst and its environmental applications. We prepared visible-light response nano-particle photocatalyst exhibiting the similar photocatalytic activity with $TiO_2$, dispersed $TiO_2$ on $SiO_2$ with an active rutile type titanium oxide prepared at low temperature. The binder and stable photocatalytic $TiO_2$ sol for photocatalytic system were also prepared. Such products were evaluated by UV/Vis spectrometer, X-ray diffraction analysis, SEM, measurement of photocatalytic activities and surface area, mechanical properties of $TiO_2$-coated surfaces. The results obtained can be applied in efficient photocatalytic systems using POF and metal plate for the purification of air.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.59-62
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• 2019

In this study, we have developed solution-processed, F-doped In-Ga-Zn-O semiconductors and investigated their applications to thin-film transistors. In order for forming the appropriate channel layer, precursor solutions were formulated by dissolving the metal salts in the designated solvent and an additive, ammonium fluoride, was incorporated additionally as a chemical modifier. We have studied thermal and chemical contributions by a thermal annealing and an incorporation of chemical modifier, from which it was revealed that electrical performances of the thin-film transistors comprising the channel layer annealed at a low temperature can be improved significantly along with an addition of ammonium fluoride. As a result, when the 20 mol% fluorine was incorporated into the semiconductor layer, electrical characteristics were accomplished with a field-effect mobility of $1.2cm^2/V{\cdot}sec$ and an $I_{on}/_{off}$ of $7{\times}10^6$.

• Applied Chemistry for Engineering
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• v.32 no.4
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• pp.449-455
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• 2021

Composite materials are substances that are configured to have excellent physical properties by combining the properties of a single substance, and are in the limelight as materials that exceed the performance of metals and polymers. However, it has the disadvantages of long cycle time and high unit price, and much research is being performed to overcome these disadvantages. In this study, we developed an epoxy resin curing agent that can shorten the time required for mass production of composite materials, and tried to expand the applicability of objections by imparting flame retardancy. The epoxy resin used as a basic substance utilized two types of bisphenol F and resorcinol structure, which was further modified using 9,10-dihydro-9-oxa-10-phosphaphenantrene-10-oxide (DOPO) to impart flame retardancy. Triethylphosphate (TEP) and bis [(5-ethyl-2-methyl-1,3,2-dioxaphosphorinan-5-yl)methyl] methyl phosphonate P,P'-dioxide (FR-001) were used as additives, seven kinds of compositions were blended, thermal characteristics (gelation time, glass transition temperature) and flame retardant performance were evaluated. We successfully developed an epoxy matrix that can be applied to high pressure resin transfer molding (HP-RTM) process.

• Current Photovoltaic Research
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• v.12 no.1
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• pp.1-5
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• 2024

Perovskite solar cells have exhibited a remarkable increase in efficiency from an initial 3.8% to 26.1%, marking a significant advancement. However, challenges persist in the commercialization of perovskite solar cells due to their low stability with respect to humidity, light exposure, and temperature. Moreover, the instability of the organic charge transport layer underscores the need for exploring inorganic alternatives. In the manufacturing process of the perovskite solar cells' oxide charge transport layer, ultraviolet-ozone (UVO) treatment is commonly applied to enhance the wettability of the perovskite solution. The UVO treatment on metal oxides has proven effective in suppressing surface oxygen vacancies and removing surface organic contaminants. This study focused on the characterization of nickel oxide as the hole transport material in perovskite solar cells, specifically investigating the impact of UVO treatment on film properties. Through this analysis, changes induced by the UVO treatment were observed, and consequent alterations in the device characteristics were identified.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.12 no.6
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• pp.279-283
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• 2012

In is paper, we design and implement the low power, high speed touch screen controller that calculates and outputs the coordinate of touch point on the touch screen of mobile devices. The system clock is 10HMz, the number of input channels is 21, standby current is $20{\mu}A$, dynamic range of input is 140pF~400pF and the response time is 0.1ms/frame. It contains the power management unit for low power, automatic impedance calibration unit in order to adapt to humidity, temperature and evaluation board, adjacent key and pattern interference suppression unit, serial interface unit of I2C and SPI. The function and performance is verified by using FPGA and $0.18{\mu}m$ CMOS standard process. The implemented touch screen is designed for using in the double layer ITO(Indium Thin Oxide) module with diamond pattern and single layer ITO module for cost-effective which are applied to mobile phone or smart remote controller.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.167-169
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• 2009

We have carried out quantitative structure and property analysis of the nanoporous structures of low dielectric constant (low-k) carbon-doped silicon oxide (SiCOH) films, which were deposited with plasma enhanced chemical vapor deposition (PECVD) using vinyltrimethylsilane (VTMS), divinyldimethylsilane (DVDMS), and tetravinylsilane (TVS) as precursor and oxygen as an oxidant gas. We found that the SiCOH film using VTMS only showed well defined spherical nanopores within the film after thermal annealing at $450^{\circ}C$ for 4 h. The average pore radius of the generated nanopores within VTMS SiCOH film was 1.21 nm with narrow size distribution of 0.2. It was noted that thermally labile $C_{x}H_{y}$ phase and Si-$CH_3$ was removed to make nanopore within the film by thermal annealing. Consequently, this induced that decrease of average electron density from 387 to $321\;nm^{-3}$ with increasing annealing temperature up to $450^{\circ}C$ and taking a longer annealing time up to 4 h. However, the other SiCOH films showed featureless scattering profiles irrespective of annealing conditions and the decreases of electron density were smaller than VTMS SiCOH film. Because, with more vinyl groups are introduced in original precursor molecule, films contain more organic phase with less volatile characteristic due to the crosslinking of vinyl groups. Collectively, the presenting findings show that the organosilane containing vinyl group was quite effective to deposit SiCOH/$C_{x}H_{y}$ dual phase films, and post annealing has an important role on generation of pores with the SiCOH film.

• Journal of Sensor Science and Technology
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• v.32 no.5
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• pp.290-294
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• 2023

Among various types of harmful gases, hydrogen sulfide is a strong toxic gas that is mainly generated during spillage and wastewater treatment at industrial sites. Hydrogen sulfide can irritate the conjunctiva even at low concentrations of less than 10 ppm, cause coughing, paralysis of smell and respiratory failure at a concentration of 100 ppm, and coma and permanent brain loss at concentrations above 1000 ppm. Therefore, rapid detection of hydrogen sulfide among harmful gases is extremely important for our safety, health, and comfortable living environment. Most hydrogen sulfide gas sensors that have been reported are electrical resistive metal oxide-based semiconductor gas sensors that are easy to manufacture and mass-produce and have the advantage of high sensitivity; however, they have low gas selectivity. In contrast, the electrochemical sensor measures the concentration of hydrogen sulfide using an electrochemical reaction between hydrogen sulfide, an electrode, and an electrolyte. Electrochemical sensors have various advantages, including sensitivity, selectivity, fast response time, and the ability to measure room temperature. However, most electrochemical hydrogen sulfide gas sensors depend on imports. Although domestic technologies and products exist, more research is required on their long-term stability and reliability. Therefore, this study includes the processes from electrode material synthesis to sensor fabrication and characteristic evaluation, and introduces the sensor structure design and material selection to improve the sensitivity and selectivity of the sensor. A sensor case was fabricated using a 3D printer, and an Ag reference electrode, and a Pt counter electrode were deposited and applied to a Polytetrafluoroethylene (PTFE) filter using PVD. The working electrode was also deposited on a PTFE filter using vacuum filtration, and an electrochemical hydrogen sulfide gas sensor capable of measuring concentrations as low as 0.6 ppm was developed.

• Korean Chemical Engineering Research
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• v.55 no.2
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• pp.156-162
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• 2017

CuO(x)/0.3Al-0.7Ce catalysts with different CuO loadings (x = 2~20 wt%) were prepared by impregnation method and investigated the effects of CuO loadings on the low temperature CO oxidation. Of the used catalysts, the CuO(10)/0.3Al-0.7Ce catalyst showed the highest catalytic performance in the absence or presence of water vapor. In the presence of water vapor, the catalytic performance was drastically decreased, with a temperature of 50% CO conversion ($T_{50%}$) shifted to higher temperature by $50^{\circ}C$ compared to the those in dry conditions because of the competitive adsorption of water vapor on the active sites. The copper metal surface area calculated from $N_2O$-titration analysis and the oxygen capacity from CO-pulse experiments were increased with the CuO loadings and showed a maximum at 10 wt%CuO/0.3Al-0.7Ce catalyst. These trends are in good agreement with the tendency of $T_{50%}$ of the catalysts. From these characteristic aspects, it could be deduced that the catalytic performance was closely related to the oxygen capacity and the copper metallic surface area.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.77-77
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• 2000

Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.