• Journal of the Korean Magnetics Society
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• v.3 no.3
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• pp.201-207
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• 1993

Starting ingot of $Pr_{15}Fe_{77}B_{8}$ were prepared by vacuum induction melting under argon atmosphere. The ingot were induction melted in a quartz crucible and then ejected as a molten alloy throuth a 0.6 mrn orifice onto a rotating cop¬per wheel. An anisotropic magnet was prepared from ribbon by hot deformation techniques. A fully dense precursor magnet first made by pressing ribbons at $680^{\circ}C$ under a pressure of $21.8\;kg/mm^{2}$. A substantially oriented magnets were obtained by die-upset under various conditions. As the compression ratio increases, the $B_{r}$ value increases pronouncedly though $_{i}H_{c}$ decreases. Also, XRD analyses show increased diffraction peak from (006). From these results, it can be known that the magnetic easy axis was formed along the compression axis. As the die-upset speed increases, $_{i}H_{c}$ increases though $B_{r}$ decreases. The $B_{r}$ increases up to $750^{\circ}C$ of die-upset temperature and above this temperature decreases. The value of $4{\pi}M_{s}$ of the $Pr_{15}Fe_{77}B_{8}$ alloy prepared is found to be 11.8 KG. When the alloy was compressed by 0.8 under the die-upset speed of 0.05 m/sec at $750^{\circ}C$, $B_{r}$ was 11.0 KG indicating that the alloy has excellent magnetic anistropy. However, this alloy has some limitation because of low $_{i}H_{c}$.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.10 no.1
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• pp.45-53
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• 2012

The metal chloride wastes from a pyrochemical process to recover uranium and transuranic elements has been considered as a problematic waste difficult to apply to a conventional solidification method due to the high volatility and low compatibility with silicate glass. In this study, a dechlorination approach to treat LiCl-KCl waste for final disposal was adapted. In this study, a $SiO_2-Al_2O_3-P_2O_5$ (SAP) inorganic composite as a dechlorination agent was prepared by a conventional sol-gel process. By using a series of SAPs, the dechlorination behavior and consolidation of reaction products were investigated. Different from LiCl waste, the dechlorination reaction occurred mainly at two temperature ranges. The thermogravimetric test indicated that the first reaction range was about $400^{\circ}C$ for LiCl and the second was about $700^{\circ}C$ for KCl. The SAP 1071 (Si/Al/P=1/0.75/1 in molar) was found to be the most favorable SAP as a dechlorination agent under given conditions. The consolidation test revealed that the bulk shape and the densification of consolidated forms depended on the SAP/Salt ratios. The leaching test by PCT-A method was performed to evaluate the durability of consolidated forms. This study provided the basic information on the dechlorination approach. Based on the experimental results, the dechlorination method using a $SiO_2-Al_2O_3-P_2O_5$ (SAP) could be considered as one of alternatives for the immobilization of waste salt.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.5
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• pp.218-224
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• 2011

LAS ($Li_2O-Al_2O_3-SiO_2$) ceramics were sintered by a solid-state reaction. $CaCO_3$ and $ZrO_2$ were added to the ${\beta}$-spodumene ($Li_2O-Al_2O_3-4SiO_2$) composition of the LAS system for enhancement of sintering behavior and mechanical strength, respectively. We have investigated the sintering characteristics, microstructures, mechanical properties and thermal expansion characteristics according to the change of the amount of additive and sintering temperature of the ${\beta}$-spodumene. At 0.1 mol% $CaCO_3$, the densification of ${\beta}$-spodumene was significantly improved. At 0.04 mol% $ZrO_2$, the strength of ${\beta}$-spodumene was also improved. For all the selected all compositions, the thermal expansion coefficient was measured by a dilatometer, which revealed 1.2 to $1.7{\times}10^6/^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.267-267
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• 1998

The fluorine doped silicon oxide (SiOF) intermetal dielectric (IMD) films have been of interest due to their lower dielectric constant and compatibility with existing process tools. However instability issues related to bond and increasing dielectric constant to water absorption when the SiOF films was exposured to atmospheric ambient. Therefore, the purpose of this research is to study the effect of post oxygen plasma treatment on the resistance of moisture absorption and reliability of SiOF film. Improvement of moisture absorption resistance of SiOF film is due to the forming of thin SiO₂layer at the SiOF film surface. It is thought that the main effect of the improvement of moisture absorption resistance was densification of the top layer and reduction in the number of Si-F bonds that tend to associate with OH bonds. However, the dielectric constant was increased when plasma treatment time is above 5 min. In this study, therefore, it is thought that the proper plasma treatment time is 3 min when plasma treatment condition is 700 W of microwave power, 3 mTorr of process pressure and 300℃ of substrate temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.236-236
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• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].