• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.77-85
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• 2005

Impedance spectroscopy was applied to low temperature polycrystalline Si in order to investigate the electrical/dielectric information in polycrystalline Si. By combined microstructure and impedance spectroscopy works, it was shown that the electrical information is sensitive to the corresponding microstructure, i.e., the grain size and distribution, judged from the capacitance vs. grain size relationship. At $360 mJ/cm^2$, the maximum in capacitance and the minimum in resistance correspond to the largest grain sizes of unimodal distribution in polycrystalline Si. The electrical/dielectric characterization is compared with Raman spectroscopic characterizations in terms of microstructure.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.924-929
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• 2002

We have developed the novel liquid crystal materials with a difluoromethyleneoxy (CF2O) moiety as a linkage group in order to satisfy the diversified various requirements for AM-LCDs. These novel CF2O LC materials have excellent physical properties that are high dielectric anisotropy, low viscosity and wide nematic temperature ranges. Physical properties measurement results that mixtures containing CF2O LC materials have suitable for characteristics for AM-LCDs. The CF2O LC materials are excellent compound for quick response and low driving voltage application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.781-785
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• 2016

With trend of the miniaturization and the high-functionalizing of mobile communication system, low-loss microwave dielectric materials are widely used for high frequency communication components. These dielectric materials should be co-sintered with highly electric-conducting metal such as silver or copper for high-frequency and thick film process application. Sintering temperature of $Ca(Li_{1/3}Nd_{2/3})_{0.2}Ti_{0.8}]O_{3-{\delta}}$, which has excellent dielectric properties such as ${\varepsilon}_r$ above 40, quality factor ($Q{\cdot}f_0$) above 16,000 GHz, and TCF (temperature coefficient of resonant frequency) of $-20{\sim}-10ppm/^{\circ}C$, is reported as high as $1,175^{\circ}C$, so it could not be co-sintered with silver or copper. Therefore in this study, low-temperature melting glasses of Zn-B-O and Zn-B-Si-O systems were added to $Ca[(Li_{1/3}Nb_{2/3})_{0.8}Ti_{0.2}]O_{3-{\delta}}$ to lower its sintering temperature under $900^{\circ}C$ without losing excellency of dielectric properties. With 15 weight % of Zn-B-Si-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.11g/cm^3$, ${\varepsilon}_r$ of 40.1, $Q{\cdot}f_0$ of 4,869 GHz, and TCF of $-5.9ppm/^{\circ}C$. With 15 weight % of Zn-B-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.14g/cm^3$, ${\varepsilon}_r$ of 40.4, $Q{\cdot}f_0$ of 7,059 GHz, and TCF of $-0.92ppm/^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.9
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• pp.565-570
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• 2016

In this work, the complex permittivity of epoxy resins is measured. Epoxy resins, epoxy with micro size fillers and epoxy with micro+nano alumina composites have been evaluated for dielectric properties according to frequency variation. The dielectric spectroscopy measurement and analyses are carried out in the frequency range of $10^{-2}Hz$ to 1MHz and constant to room temperature. The results of dielectric loss suggest that significant improvement in the electrical performance can be expected by using samples containing nano and micro fillers mixture when compared to materials containing only microfillers. As the result, we verified the specific characteristics of dielectric permittivity and dielectric loss namely, relative permittivity become low with improving dispersibility of nano+micro mixture composites and become rise with agglomerate of nano particles.

• Journal of the Korean Ceramic Society
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• v.49 no.1
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• pp.100-104
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• 2012

Barium zincoborate (BZB) glass was added to $Ba_{0.5}Sr_{0.5}TiO_3$, and sintered at $875^{\circ}C$ for 2 h in air. When the BZB glass was added in quantities ranging from 15 to 20 wt%, the relative bulk density ranged from 93.1% to 94.2%, while the density decreased to roughly 81% thereafter up to 30 wt% glass addition. Quantitative XRD analysis showed that the $Ba_{0.5}Sr_{0.5}TiO_3$ filler was significantly dissolved into the BZB glass. However, no secondary phase was identified by XRD up to 30 wt% glass addition. The dielectric constant was about 130 to 140 at 1MHz up to 20 wt% BZB glass addition, while it decreased to about 60 thereafter, which may be ascribed to decreased density, partial dissolution of the $Ba_{0.5}Sr_{0.5}TiO_3$, and associated changes in the glass composition. The dielectric loss of the 20 wt% glass added specimen was 0.008.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.521-524
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• 2010

Low loss perovskite niobates and tantalates have been placed on a short list of functional materials for future technologies. In this study, we fabricated Ag(Ta,Nb)$O_3$ thick films on the $Al_2O_3$ substrates by the screen printing method. The Ag(Ta,Nb)$O_3$ powders were fabricated by the mixed oxide method. The sintering temperature and time were $1150^{\circ}C$ and 2 hrs, respectively. The results of XRD analysis showed that the specimens employed in this study had the pesudo cubic structure. The dielectric permittivity and loss tangent of the films have been characterized from 1 kHz to 1 MHz. Also the dielectric permittivity and loss tangent were measured from 303 K to 393 K. The electrical properties of the film are also discussed.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.442-446
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• 2002

Design of microwave absorbers using high frequency properties of fiber reinforced composites are investigated. Two kinds of composite materials (glass and carbon) are used and their complex permittivity and permeability are measured by transmission/reflection technique using network analyzer. Low dielectric constant and nearly zero dielectric loss are determined in glass fiber composite. However, carbon fiber composites show the high dielectric constant and large conduction loss which is increased with anisotropy of fiber arrangement. It is, therefore, proposed that the glass and carbon fiber composites can be used as the impedance transformer (surface layer) and microwave reflector, respectively. By inserting the foam core or honeycomb core (which can be treated as an air layer) between glass and carbon fiber composites, microwave absorption above 10 dB (90% absorbance) in 4-12 GHz can be obtained. The proposed fiber composites laminates with sandwitch structure have high potential as lightweight and high strength microwave absorbers.

• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.3
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• pp.70-74
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• 2001

Admittance or impedance spectroscopy is one of the powerful tools to study dielectric relaxation and loss processes in organic and inorganic materials. In this study, the frequency dependent properties of an indium tin oxide/tris(8-hydroxyquinoline) aluminum($Alq_3$)/aluminum structure have been studied. The conductance of the $Alq_3$ film increases with the DC applied voltage up to 4V and decreases above 4V in the low frequency region. This indicates that the resistance of the device decreases with the applied bias due to the carrier injection enhancement, thereafter the injected carriers form the space charge and the additional injection of carriers is prevented. The Cole-Cole plot of the admittance takes a one-semicircle shape, which means that the device can be modeled as a parallel resistor-capacitor network. The resistance and capacitance were estimated as 8.62k${\Omega}$ and 2.7nF, respectively, at 3V in the low frequency region. The dielectric constant ( ${\epsilon}'$ ) of the $Alq_3$ film is independent of the frequency in the low frequency region below 100kHz, while the frequency dependency was observed at above 100kHz. The dielectric loss factor ( ${\epsilon}"$ ) of the $Alq_3$ film shows the dielectric dispersion below 100kHz and dielectric absorption in higher frequency domain. The dispersion is thought to be related to the hopping process of the carriers. The ${\epsilon}"$ is proportional to the reciprocal of the frequency. The dielectric relaxation time was extracted to about 0.318${\mu}s$ from the dielectric absorption spectrum.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.4
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• pp.143-148
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• 2002

Method of plasma-immersion ion deposition of hydrogenated DLC films on relatively thick flat dielectric substrates from plasma of not-self-sustained low-pressure gas arc discharge is suggested. Coating properties have been investigated experimentally, average energy Per a deposited carbon atom depending on discharge current has been calculated. Optimum deposition parameters lot obtaining sufficiently hard and transparent high-adhesive a-C:H films on a 4-mm thick glass substrates have been determined. Possibility to use these coatings for photo-tools protection from abrasion wear at low operating loads is shown in general.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1305-1307
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• 2009

We have investigated the new modification of poly (vinyl phenol) (PVP) for low hysteresis organic thin film transistors (OTFTs). In order to suppression of hysteresis phenomenon, synthesized various backbone structure polymeric gate dielectric. The modified polymeric dielectric was synthesized by inducing ringshape phenol backbone structure instead of conventional chain. We could be observed that relieved hysteresis and excellent air stability from ring-shape phenol backbone structure.