• Journal of Soil and Groundwater Environment
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• v.10 no.5
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• pp.11-17
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• 2005

Characteristics of phenanthrene removal in the Electrokinetic (EK)-Fenton process were investigated in a 2-dimensional test cell in a viewpoint of the effect of gravity and electrosmotic flow (EOF). When the constant voltage of 100 V was applied to this system, the current decreased from 1,000 to 290 mA after 28 days, because soil resistance increased due to the exhaustion of ions in soil by electroosmosis and electromigration. Accumulated EOF in two cathode reservoirs was 10.3 L and the EOF rate was kept constant for 28 days. At the end of operation, the concentration of phenanthrene was observed to be very low near the anode and increased in the cathode region because hydrogen peroxide was supplied from anode to cathode region following the direction of EOP. Additionally, the concentration of phenanthrene decreased at the bottom of the test cell because the electrolyte solution containing hydrogen peroxide was largely transported toward the bottom due to a low capillary action in the soil with high porosity. Average removal efficiency of phenanthrene by EK-Fenton process was 81.4% for 28 days. In-situ EK-Fenton process would overcome the limitations of conventional remediation technologies and effectively remediate the contaminated sites.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.12
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• pp.40-48
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• 2013

This paper presents multi-channel transimpedance amplifier(TIA) arrays in short-range LADAR systems for unmanned vehicles, by using a 0.18um CMOS technology. Two $4{\times}4$ channel TIA arrays including a voltage-mode INV-TIA and a current-mode CG-TIA are introduced. First, the INV-TIA consists of a inverter stage with a feedback resistor and a CML output buffer with virtual ground so as to achieve low noise, low power, easy current control for gain and impedance. Second, the CG-TIA utilizes a bias from on-chip bandgap reference and exploits a source-follower for high-frequency peaking, yielding 1.26 times smaller chip area per channel than INV-TIA. Post-layout simulations demonstrate that the INV-TIA achieves 57.5-dB${\Omega}$ transimpedance gain, 340-MHz bandwidth, 3.7-pA/sqrt(Hz) average noise current spectral density, and 2.84mW power dissipation, whereas the CG-TIA obtains 54.5-dB${\Omega}$ transimpedance gain, 360-MHz bandwidth, 9.17-pA/sqrt(Hz) average noise current spectral density, and 4.24mW power dissipation. Yet, the pulse simulations reveal that the CG-TIA array shows better output pulses in the range of 200-500-Mb/s operations.

• KIEE International Transactions on Electrophysics and Applications
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• v.12C no.4
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• pp.208-213
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• 2002

The present study describe the electrical performance of amorphous T $a_2$ $O_{5-X}$ fabricated on the buffer layers Ti and Ti $O_2$. T $a_2$ $O_{5-X}$ thin films were grown on the Ti and Ti $O_2$ layers as a capacitor layer using reactive sputtering method. The X-ray pattern analysis indicated that the two as-deposited films were amorphous and the amorphous state was kept stable on the RTA(rapid thermal annealing) at even $700^{\circ}C$. Measurements of dielectric properties of the reactive sputtered T $a_2$ $O_{5-X}$ thin films fabricated in two simple MIS(metal insulator semiconductor), structures, (Cu/T $a_2$ $O_{5}$ Ti/Si and CuT $a_2$ $O_{5}$ Ti $O_2$Si) show that the amorphous T $a_2$ $O_{5}$ grown on Ti showed high dielectric constant (23～39) and high leakage current density(10$^{-3}$ ～10$^{-4}$ (A/$\textrm{cm}^2$)), whereas relatively low dielectric constant (～15) and tow leakage current density(10$^{-9}$ ～10$^{-10}$ (A/$\textrm{cm}^2$)) were observed in the amorphous T $a_2$ $O_{5}$ deposited on the Ti $O_2$ layer. The electrical behaviors of the T $a_2$ $O^{5}$ thin films were attributed to the contribution of Ti- $O_2$ and the compositionally gradient Ta-Ti-0, being the low dielectric layer and high leakage current barrier. In additional, The T $a_2$ $O_{5}$ Ti $O_2$ thin films exhibited dominant conduction mechanism contributed by the Poole-Frenkel emission at high electric field. In the case of T $a_2$ $O_{5}$ Ti $O_2$ thin films were related to the diffusion of Ta, Ti and O, followed by the creation of vacancies, in the rapid thermal treated thin films.films.

• Journal of Advanced Marine Engineering and Technology
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• v.38 no.7
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• pp.854-867
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• 2014

In the circumstance that high oil price state is continued over the world, the investment in crude oil development by oil major is a trend of increasing. Recently the number of delivered drill-ship for 5 years has been sharply increased all over the world and about twice than that of past 30 years. As addition to the increase of the drill-ship demand, the operation of drill-ships which is delivered recently is about 3,000 meters, ultra deep sea, on average and the work area is expending. Accordingly the drilling system including the size and length of pipe for drilling has been bigger and bigger and the power supply equipment for operation system also has large capacity. Unlike merchant vessel, high power and high voltage of diesel generators are required for drill-ship for which the demand for V-type 320 bore of diesel generator has increased. It is on the raised that the importance of lubrication oil cleaning for diesel generator on drill-ship which has longer time for construction, and also long term low load operation is unavoidable during commissioning of equipments. Recently it was reported that engine crankpin was damaged due to the hard contact caused by the abnormal wear down(Cam wear) on crankpin and bearing. The same pattern of wear down was found through the inspection on series vessels and the other vessel under commissioning. The purpose of this paper is to analyze of the wear mechanism based on the observation and theories and objective research from actual cases and to prepare the counter measures to avoid foreseeable damage when the lubricating oil is not properly cleaned.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.117.2-117.2
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• 2011

Since Gratzel and co-workers developed a new type of solar cell based on the nanocrystalline TiO2 electrode, dye-sensitized solar cells (DSSCs) have attracted considerable attention on account of their high solar energy-to-conversion efficiencies (11%), their easy manufacturing process with low cost production compared to conventional p-n junction solar cells. The mechanism of DSSC is based on the injection of electrons from the photoexcited dye into the conduction band of nanocrystalline TiO2. The oxidized dye is reduced by the hole injection process from either the hole counter or electrolyte. Thus, the electronic structures, such as HOMO, LUMO, and HOMO-LUMO gap, of dye molecule in DSSC are deeply related to the electron transfer by photoexcitation and redox potential. To date, high performance and good stability of DSSC based on Ru-dyes as a photosensitizer had been widely addressed in the literatures. DSSC with Ru-bipyridyl complexes (N3 and N719), and the black ruthenium dye have achieved power conversion efficiencies up to 11.2% and 10.4%, respectively. However, the Ru-dyes are facing the problem of manufacturing costs and environmental issues. In order to obtain even cheaper photosensitizers for DSSC, metal-free organic photosensitizers are strongly desired. Metal-free organic dyes offer superior molar extinction coefficients, low cost, and a diversity of molecular structures, compared to conventional Ru-dyes. Recently, novel photosensitizers such as coumarin, merocyanine, cyanine, indoline, hemicyanine, triphenylamine, dialkylaniline, bis(dimethylfluorenyl)-aminophenyl, phenothiazine, tetrahydroquinoline, and carbazole based dyes have achieved solar-to-electrical power conversion efficiencies up to 5-9%. On the other hand, organic dye molecules have large ${\pi}$-conjugated planner structures which would bring out strong molecular stacking in their solid-state and poor solubility in their media. It was well known that the molecular stacking of organic dyes could reduce the electron transfer pathway in opto-electronic devices, significantly. In this paper, we have studied on synthesis and characterization of dendritic organic dyes with different number of electron acceptor/anchoring moieties in the end of dendrimer. The photovoltaic performances and the incident photon-to-current (IPCE) of these dyes were measured to evaluate the effects of the dendritic strucuture on the open-circuit voltage and the short-circuit current.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.5
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• pp.587-592
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• 2018

Because the brightness of an AMOLED is determined by the flowing current, each pixel of AMOLED operates via A current driving method. Therefore, it is necessary to supply power to adjust the amount of current according to THE user's requirement for AMOLED driving. In this study, an IP driver block was designed and a simulation was conducted for an AMOLED display, which supplies power as selected by users. The IP driver design focused on regulating the output power due to the OLED characteristics for the diode electric current according to the voltage to be activated by pulse-skipping mode (PSM) under low loads, and 1.5 MHz pulse-width modulation (PWM) for medium/high loads. The IP driver was designed to eliminate the ringing effects appearing from the dis-continue mode (DCM) of the step-up converter. The ringing effects destroy the power switch within the IC, or increase the EMI to the surrounding elements. The IP driver design minimized this through a ringing killer circuit. Mobile applications were considered to enable true shut-down capability by designing the standby current to fall below $1{\mu}A$ to disable it. The driver proposed in this paper can be applied effectively to the same system as the AMOLED display dual power management circuit.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.5
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• pp.197-206
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• 2014

Motor imagery based Brain-computer Interface(BCI), which has recently attracted attention, is the technique for decoding the user's voluntary motor intention using Electroencephalography(EEG). For classifying the motor imagery, event-related desynchronization(ERD), which is the phenomenon of EEG voltage drop at sensorimotor area in ${\mu}$-band(8-13Hz), has been generally used but this method are not free from the performance degradation of the BCI system because EEG has low spatial resolution and shows different ERD-appearing band according to users. Common spatial pattern(CSP) was proposed to solve the low spatial resolution problem but it has a disadvantage of being very sensitive to frequency-band selection. Discriminative filter bank common spatial pattern(DFBCSP) tried to solve the frequency-band selection problem by using the Fisher ratio of the averaged EEG signal power and establishing discriminative filter bank(DFB) which only includes the feature frequency-band. However, we found that DFB might not include the proper filters showing the spatial pattern of ERD. To solve this problem, we apply a band-selection process using CSP feature vectors and linear discriminant analysis to DFBCSP instead of the averaged EEG signal power. The filter selection results and the classification accuracies of the existing and the proposed methods show that the CSP feature is more effective than signal power feature.

• Korean Chemical Engineering Research
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• v.47 no.2
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• pp.150-156
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• 2009

Plasma Display Panels(PDPs) require to have improved luminous efficiency, low manufacturing cost, and high image quality to compete with other flat display devices such as Liquid Crystal Displays(LCDs) and organic light-emitting diodes(OLEDs). In addition, the diversity of product line-up may be needed for high market share. In this paper, the optical characteristics of typical green phosphor for PDP application are reviewed and the problem-based solution will be proposed. We also shortly describe the principle of 3D-PDPs which are promising. Then, the requirement of green phosphor for 3D-PDP application is summarized and research achievement, as of now, is described. The typical problems of $Zn_2SiO_4:Mn$ phosphor, which is the most well-known, are the negatively charged surface property and the long decay time, which leads to unstable discharge in green cell and afterimage. These problems were solved by coating the phosphor surface with metallic oxide. It was found that $Al_2O_3$ would be the best material for $Zn_2SiO_4:Mn$ phosphor. It gives longevity as well as low operating voltage due to the charging effect in green cells. Also, new phosphors, $(Y,\;Gd)Al_3(BO_3)_4:Tb$ and $(Mg,\;Zn)Al_2O_4:Mn$ phosphor are proposed for increasing the luminance and reducing the decay time, which are capable to apply for 3D-PDP application.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.993-994
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• 2008

Electrochromic (EC) devices are capable of reversibly changing their optical properties upon charge injection and extraction induced by the external voltage. The characteristics of the EC device, such as low power consumption, high coloration efficiency, and memory effects under open circuit status, make them suitable for use in a variety of applications including smart windows and electronic papers. Coloration due to reduction or oxidation of redox chromophores can be used for EC devices (e-paper), but the switching time is slow (second level). Recently, with increasing demand for the low cost, lightweight flat panel display with paper-like readability (electronic paper), an EC display technology based on dye-modified $TiO_2$ nanoparticle electrode was developed. A well known organic dye molecule, viologen, was adsorbed on the surface of a mesoporous $TiO_2$ nanoparticle film to form the EC electrode. On the other hand, ZnO is a wide bandgap II-VI semiconductor which has been applied in many fields such as UV lasers, field effect transistors and transparent conductors. The bandgap of the bulk ZnO is about 3.37 eV, which is close to that of the $TiO_2$ (3.4 eV). As a traditional transparent conductor, ZnO has excellent electron transport properties, even in ZnO nanoparticle films. In the past few years, one-dimension (1D) nanostructures of ZnO have attracted extensive research interest. In particular, 1D ZnO nanowires renders much better electron transportation capability by providing a direct conduction path for electron transport and greatly reducing the number of grain boundaries. These unique advantages make ZnO nanowires a promising matrix electrode for EC dye molecule loading. ZnO nanowires grow vertically from the substrate and form a dense array (Fig. 1). The ZnO nanowires show regular hexagonal cross section and the average diameter of the ZnO nanowires is about 100 nm. The cross-section image of the ZnO nanowires array (Fig. 1) indicates that the length of the ZnO nanowires is about $6\;{\mu}m$. From one on/off cycle of the ZnO EC cell (Fig. 2). We can see that, the switching time of a ZnO nanowire electrode EC cell with an active area of $1\;{\times}\;1\;cm^2$ is 170 ms and 142 ms for coloration and bleaching, respectively. The coloration and bleaching time is faster compared to the $TiO_2$ mesoporous EC devices with both coloration and bleaching time of about 250 ms for a device with an active area of $2.5\;cm^2$. With further optimization, it is possible that the response time can reach ten(s) of millisecond, i.e. capable of displaying video. Fig. 3 shows a prototype with two different transmittance states. It can be seen that good contrast was obtained. The retention was at least a few hours for these prototypes. Being an oxide, ZnO is oxidation resistant, i.e. it is more durable for field emission cathode. ZnO nanotetropods were also applied to realize the first prototype triode field emission device, making use of scattered surface-conduction electrons for field emission (Fig. 4). The device has a high efficiency (field emitted electron to total electron ratio) of about 60%. With this high efficiency, we were able to fabricate some prototype displays (Fig. 5 showing some alphanumerical symbols). ZnO tetrapods have four legs, which guarantees that there is one leg always pointing upward, even using screen printing method to fabricate the cathode.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.10
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• pp.109-117
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• 2004

In this paper, a K-band local oscillator composed of a VCDRO(Voltage Controlled Dielectric Resonator Oscillator), GaAs MESFET, and Reflector type frequency doubler has been designed and fabricated. TO obtain a good phase noise performance of a VCDRO, a active device was selected with a low noise figure and a low flicker noise MESFET and a dielectric resonator was used for selecting stable and high oscillation frequency. Especially, to have a higher conversion gain than a conventional doubler as well as a good harmonic suppression performance with circuit size reduced a doubler structure was employed as the Reflector type composed of a reflector and a open stub of quarter wave length for rejecting the unwanted harmonics. The measured results of fabricated oscillator show that the output power was 5.8 dBm at center frequency 12.05 GHz and harmonic suppression -37.98 dBc, Phase noise -114 dBc at 100 KHz offset frequency, respectively, and measured results show of fabricated frequency doubler, the output power at 5.8 dBm of input power is 1.755 dBm conversion gain 1.482 dB, harmonic suppression -33.09 dBc, phase noise -98.23 dBc at 100 KHz offset frequency, respectively. This oscillator could be available to a local oscillator in K-band which used frequency doubler techniques.