• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.302-305
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• 1995

ITO(indium tin oxide) that is both conductive in electricity and transparent to the visible ray is called transparent conducting thin film. Nowaday, according to the development of flat panel display such as LCD(Liquid Crystal display, EL(electolumine- scence display), PDP(plasma display panel), ECD(electrocromic display), the higher quality in the low temperature process has been asked to reduce the production cost and to have a good uniformity on a large substrate. In this study, we prepared indium tin oxide(ITO) by a cylindrical DC magnetron sputtering with Indium-tin (9:1) alloy target instead of indium-tin oxide target. To reduce the defact in ITO, the effect on ITO by varing the magnetic field intensity and the applied voltage ares studied. the resistivity of the film deposited in oxygen partial pressure of 5% and substrate temperature of 140$^{\circ}C$. is 1.6${\times}$10$\^$-1/$\Omega$$.$cm with 85% optical transmission in viaible ray.

• Journal of Welding and Joining
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• v.15 no.5
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• pp.74-83
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• 1997

Effect of welding parameters such as current, speed and electrode pressure on the weld quality of tin coated steels for small containers was discussed in this paper. Welding was performed with low frequency wire seam welding system which was loaded with 1.5mm in diameter copper wire electrode. The welding parameters were monitored at the position close to the welding spot so as to minimize the instrumentation error, and the signals were stored into a digital data acquisition system before analysis. Results showed that critical current for sufficient nugget size increased as the base material thickness increased, while the width of the optimum welding range was reduced. The acceptable welding condition derived from this study was found to be effective within the thickness range of $\pm$10% of the nominal (0.25mm) thickness. Tin coating layer was proved not to affect seriously on the weld quality, i.e. strength and formability, since consumable wire electrode was used in this process. Test results also demonstrated that the welding current was thought to be the most effective parameter to form an acceptable weld, while welding speed or electrode pressure exerted less effect on the nugget formation. However, these two parameters played an important role because the former was related to the nugget overlap interval, and the latter, to the formation of expulsion during welding.

• 한국해양학회지
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• v.29 no.2
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• pp.132-144
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• 1994

The relationship of zooplankton communities and distributions of copepods as indicator species to environmental variables, such as temperature, salinity, chemical oxygen demand (COD) and total inorganic nitrogen (TIN) was studied in Pusan Harbor in October 1990 and January, April and July 1991. Zooplankton communities were analysed by using cluster analysis and species diversity index. Four groups of copepods as indicator species were Acrocalanus gacilis, Euchaeta plana, pareuchaeta russell and Pleuromamma gracilis as the oceanic warm water species; Cemtropages abdominalis as the neritic cold water species; Meridian lucens as the oceanic cold water species Acartia omorii as the polluted water species. the offshore waters of Pusan harbor was dominated by the oceanic warm water species in October and by the neritic cold water species in January and April. This area showed the low values of COD and Tin. the inshore waters of Pusan harbor, where the high values of cod And Tin and the low value of diversity were recorder was represented by A.. omorii. Cluster analysis of the zooplankton community revealed two or three regional areas in Pusan harbor. Area I, the offshore area of Pusan harbor, not only was represented high species diversity and low density of A. omorii but also was dominated copepods in zooplankton roups. Areas II and III were grouped horizontally from offshore to inshore of Pusan harbor. Area II was showed intermediate values in diversity, density of A. omorii and percentage composition of copepods. Area III was revealed the lowest diversity,density of A.omorii and percentage composition of Cladocerans.Coperpoda was a dominant zooplankton group in each area during the study periods except two special cases.Area II was dominated by Noctiluca scintillans in April and Area III was occupied by Cladocerans in July.Distribution of Indicator species and areas demarcated based on cluster analysis showed a close relationship with environments.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.992-995
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• 2004

In this study, we have grown indium tin oxide (ITO) thin films by using a low-frequency (60${\sim}$300 Hz) magnetron sputtering method and investigated characteristics of ITO thin films deposited on polyethersulfone substrates. The experimental results show that the films have good qualities in surface morphology, transmittance, and electrical conduction.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1560-1563
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• 2005

In this study, we introduce indium tin oxide (ITO) thin films grown by using a low-frequency magnetron sputtering method (LFMSM). Characteristics of the ITO thin films deposited on polyethersulfone (PES) and polyethylene terephthalate (PET) substrates are investigated. Experiments were carried out as a function of deposition time. ITO thin films on polymer substrates revealed amorphous structure. The optical, the electrical and structural properties of the films on PES substrate are better than those on PET substrates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.7-7
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• 2010

Indium tin oxide (ITO) - SWNT nano crystalline composites was synthesized at low temperature(${\sim}250^{\circ}C$)using Nano Cluster Deposition technique by Metal Orhoganic Chemical Vapor Deposition method. XRD patterns of ITO- SWNT composite shows pure cubic phases without any secondary phase. I-V measurement gives resistance of 12 ohms for Sn doped (3 wt %) indium oxide-SWNT composites. The electrical conductivity of the nano composites is significantly enhanced compared to the SWNT.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.660-665
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• 1996

Thin films of indium oxide and indium tin oxide have been prepared by d.c. magnetron sputtering onto the fused silica substrates kept at 90, 200 and $300^{\circ}C$. In order to elucidate the optical absorption process in low energy region below 3 eV, we have analyzed the absorption coefficients obtained from reflectance and transmittance measurements for these films based on the Lucovsky model. It has been found for the first time that a defect center in the band gap is located at 0.8~1.4 eV below the Fermi level in all films and arises from oxygen vacancies in their films. The optical absorption in low energy region is explained to be dominated by the transition of electrons trapped at the positively charged (+2e) oxygen vacancies with s-like nature to the conduction band formed from the 5s-orbit in indium atoms.

• Applied Science and Convergence Technology
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• v.24 no.2
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• pp.41-46
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• 2015

Transparent conductive oxides (TCOs) are essential material in optoelectronics such as solar cells, touch screens and light emitting diodes. Particularly TCOs are attractive material for infrared cut off film due to their high transparency in the visible wavelength range and high infrared reflectivity. Among the TCO, Indium tin oxide has been widely used because of the high electrical conductivity and transparency in the visible wavelength region. But ITO has several limitations; expensive and low environmental stability. On the other hands, fluorine doped tin oxide (FTO) is well known for low cost, weather ability and stable in acidic and hydrogen. In this study, two different magnetron sputtering techniques with RF and DC modes at room temperature deposition of FTO thin film was conducted. The change of oxygen content is influence on the topography, transmittance and refractive index.

• Journal of Korean Society of Environmental Engineers
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• v.22 no.2
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• pp.231-239
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• 2000

This study was investigated to estimate optimal conditions and biological oxic denitrification to treat wastewater with low C/N ratio and high strength total inorganic nitrogen (TIN) concentration by using $A_2O$ fixed biofilm system. The lab-scale experimental system packed with media, which were composed of polyvinylidene chloride fiber (oxic basin) and ceramic ball (anaerobic and anoxic basin), was used. This system was operated with various influent alkalinities at the C/N(TOC/TIN) ratio of 0.5. The study results showed that TOC were removed over 96.0% at all operation conditions. The removal efficiencies over 93.5% for $NH_4{^+}-N$ and 81.8% for TIN were obtained at the alkalinity of about 1210mg/L(Run 5). Among the removal of TIN, 64.9% was occurred by biological denitrification at an oxic basin. It was confirmed through mass balance of alkalinity and nitrogen that the amount of alkalinity produced during biological denitrification at oxic basin was 2.49~3.46 mg Alkalinity/mg $NO_2{^-}-N$, ${\Delta}TOC/{\Delta}DEN$ of 0.34 (Run 5) was obtained at an oxic basin, which was less than the theoretical value of 1.22.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).