• Title/Summary/Keyword: low temperature plasma

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Preparation and properties of BaO-ZnO-$B_2O_3$-$V_2O_5$-$SiO_2$ Glass for PDP paste (PDP용 BaO-ZnO-$B_2O_3$-$V_2O_5$-$SiO_2$계 glass past의 제조와 특성)

  • Son, Myung-Mo;Lee, Heon-Soo;Lee, Chang-Hee;Lee, Sang-Geun;Park, Hee-Chan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.1096-1099
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    • 2004
  • The principal problems in development of dielectric paste materials for PDP(plasma display panel)are PbO free paste and low melting temperature. We prepared PbO free paste from glasses in the system BaO-ZnO-$B_2O_3$-$V_2O_5$. DTA, and XRD were used to characterize BaO-ZnO-$B_2O_3$-$V_2O_5$ glasses. In this present study, PbO free paste had thermal expansion of $74\times10^{-7}/^{\circ}C$, DTA softening point of $460^{\circ}C$, and firing condition of $520^{\circ}C$, 20min

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Preparation of AIN piezoelectric thin film for filters (필터용 AIN 압전 박막의 제작)

  • Keum Min-Jong;Kim Yeong-Cheol;Seo Hwa-Il;Kim Kyung-Hwan
    • Journal of the Semiconductor & Display Technology
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    • v.5 no.1 s.14
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    • pp.13-16
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    • 2006
  • AIN thin films were prepared on amorphous glass and $SiO_2(1{\mu}m)/Si(100)$ substrate by the facing targets sputtering (FTS) apparatus, which can provide high density plasma, a high deposition rate at a low working gas pressure. The AIN thin films were deposited at a different nitrogen gas flow rate ($1.0{\sim}0.3$) and other sputtering parameters were fixed such as sputtering power of 200w, working pressures of 1mTorr and AIN thin film thickness of 800 nm, respectively. The thickness and crystallographic characteristics of AIN thin films as a function of $N_2$ gas flow rate $[N_2/(N_2+Ar)]$ were measured by $\alpha$-step and an X-ray diffraction (XRD) instrument. And the c-axis preferred orientations were evaluated by rocking curve. In the results, we could prepared the AIN thin film with c-axis preferred orientation of about $5^{\circ}$ on substrate temperature R.T. at nitrogen gas flow rate 0.7.

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Removal of NO/SO2 by the low temperature plasmas and photocatalysts (저온 플라즈마와 광촉매에 의한 NO/SO2 제거)

  • Kim, Dong-Joo;Kim, Kyo-Seon
    • Journal of Industrial Technology
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    • v.26 no.A
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    • pp.181-188
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    • 2006
  • In this study, we analyzed the effects of several process variables on the removal efficiencies of NO and $SO_2$ by the dielectric barrier discharge process combined with photocatalysts. The $TiO_2$ photocatalysts were coated onto the spherical-shaped glass beads as dielectric materials by the dip-coating method to analyze the effects of photodegradation reaction on the NO and $SO_2$ removal. As the voltage applied to the plasma reactor increases, or as the pulse frequency of applied voltage increases, the NO and $SO_2$ removal efficiencies increase. Also as the residence time increases, or as the initial concentration of NO decreases, the NO and $SO_2$ removal efficiencies increase. The higher the amount of $TiO_2$ particles coated onto the glass bead is, the larger the surface area of $TiO_2$ particles for the photodegradation reaction is and the NO and $SO_2$ are removed more quickly by the faster photodegradation reactions.

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Electro-optical characteristics of low temperature atmospheric pressure micro plasma using dielectric-free parallel electrodes (노출전극 대기압 저온 마이크로 플라즈마의 개발 및 전기광학적 특성)

  • Ha, Chang-Seung;Song, In-Chung;Lim, Wang-Sun;Kim, Dong-Hyun;Lee, Hae June;Lee, Ho-Jun;Park, Chung-Hoo
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.1350-1351
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    • 2008
  • 대기압 플라즈마를 발생시키는 것은 종래의 저기압 플라즈마를 발생시키는 것 보다 대단히 어렵다. 하지만, 대기압 플라즈마는 진공장치가 필요 없고, 제작방식이 비교적 간편하며 살균, 의료, 표면처리 등 다양한 응용이 가능해서 그 잠재력이 매우 크다. 본 연구에서는 유전체가 없는 두 전극사이에서 대기압 저온 마이크로 플라즈마를 발생시켰으며, submicrosecond pulse 파형으로 glow discharge를 유지할 수 있었다. 플라즈마 소스의 전극 간격은 200[${\mu}m$]이고 방전개시전압은 약 450${\sim}$600[V]이다. 플라즈마를 발생시키기 위한 feeding gas는 He 100%이다. 본 연구에서 개발된 대기압 플라즈마는 소비전력이 2[W]미만으로 온도는 조건에 따라 40$^{\circ}C$미만으로 발생 가능하다. 또한 스펙트럼 분석 시 777nm인 산소원자의 peak이 다른 원자 혹은 분자들의 peak보다 월등히 높다.

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The RLG's Power Supply Design for Attitude Control in the Satellite (저궤도 위성 자세제어용 센서 RLG 전원 공급기 설계)

  • Kim, Eui-Chan;Lee, Heung-Ho
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.1488-1490
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    • 2008
  • The gyroscope is the sensor for detecting the rotation in inertial reference frame and constitute the navigation system together an accelerometer. As the inertial reference equipment for attitude determination and control in the satellite, the mechanical gyroscope has been used but it bring the disturbance for mass unbalance so the disturbance give a bad influence to the observation satellite mission because the mechanical gyroscope has the rotation parts. During the launch, The mechanical gyroscope is weak in vibration, shock and has the defect of narrow operating temperature range so it need the special design in integration. Recently the low orbit observation satellite for seeking the high pointing accuracy of image camera payload accept the FOG(Fiber Optic Gyro) or RLG(Ring Laser Gyro) for the attitude determination and control. The Ring Laser Gyro makes use of the Sanac effect within a resonant ring cavity of a He-Ne laser and has more accuracy than the other gyros. It need the 1000V DC to create the He-Ne plasma in discharge tube. In this paper, the design process of the High Voltage Power Supply for RLG(Ring Laser Gyroscope) is described. The specification for High Voltage Power Supply(HVPS) is proposed. Also, The analysis of flyback converter topology is explained. The Design for the HVPS is composed of the inverter circuit, feedback control circuit, high frequency switching transformer design and voltage doubler circuit.

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Crystallographic Properties of ZnO/AZO thin Film Prepared by FTS method (FTS법으로 제작한 ZnO/AZO 박막의 결정학적 특성)

  • 금민종;강태영;최형욱;박용서;김경환
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.9
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    • pp.979-982
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    • 2004
  • The ZnO thin films were prepared by the FTS (facing target sputtering) system, which enables to provide high density plasma and a high deposition rate at a low working gas pressure. We introduced the AZO thin film in order to improve the crystallographic properties of ZnO thin film because of the AZO(ZnO:Al) thin film has an equal crystal structure to the ZnO thin film. ZnO/AZO thin films were deposited at a different oxygen gas flow ratio, R.T. 2mTorr working pressure and a 0.8A sputtering current. The film thickness and c-axis preferred orientation of ZnO/AZO/glass thin films were measured by ${\alpha}$-step and an x-ray diffraction (XRD) instrument. In the results, we could prepare the ZnO thin film with c-axis preferred orientation of about 6$^{\circ}$ on substrate temperature R.T. at O$_2$ gas flo rate 0.5.

Surface energy modification of SiOxCyHz film using low temperature PECVD by controlling the plasma process for HMDS precursor with hydrogen gas (수소 기체와 HMDS 프리커서의 저온 PECVD공정을 통한 실리콘옥사이드 박막의 표면에너지 개질)

  • Lee, Jun-Seok;Jin, Su-Bong;Choe, Yun-Seok;Choe, In-Sik;Han, Jeon-Geon
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.11a
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    • pp.165-166
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    • 2012
  • 표면의 젖음성은 어플리케이션의 매우 중요한 점으로, 이것은 표면에너지와 표면의 조도에 의해 결정된다. 표면의 젖음성을 낮추기 위하여 저온 PECVD 공정을 통해 초소수성 박막을 만들었다. $SiO_xC_yH_z$ 필름을 만들기 위하여 RF power을 사용하였고, HMDS (hexamethyl-disilazane) precursor과 함께 수소 기체를 통해 증착하였다. 이 실험에서는 수소와 RF power를 변수로 진행하였고, 이것은 소수성 박막의 표면에너지를 변화시켰다. 필름을 합성한 후 contact angle measurement 및 AFM을 사용해 표면에너지와 표면조도를 관찰하였다. 또한 필름의 화학적 결합을 알기 위해 FT-IR을 이용하였다. 여기에서 표면의 에너지는 표면의 조도와 화학적 결합상태에 의해서 영향을 받았음을 알 수 있었다.

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The Property Change of ITO Prepared by Reactive R.F. Sputtering in POP manufacturing Process (반응성 스퍼트링으로 형성된 ITO의 유전채 소성에 따른 특성변화)

  • Nam, Sang-Ok;Chi, Sung-Won;Sohn, Je-Bong;Huh, Keun-Do;Cho, Jung-Soo;Park, Chung-Hoo
    • Proceedings of the KIEE Conference
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    • 1997.07d
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    • pp.1411-1413
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    • 1997
  • The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD (Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn wt 10%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature $150^{\circ}C$ and 8% $O_2$ partial pressure showed about $3.6{\Omega}/{\square}$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.

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Simulation of Low Temperature Plasmas for an Ultra Violet Light Source using Coplanar Micro Dielectric Barrier Discharges

  • Bae, Hyowon;Lee, Ho-Jun;Lee, Hae June
    • Applied Science and Convergence Technology
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    • v.25 no.6
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    • pp.138-144
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    • 2016
  • The discharge characteristics of pulse-driven coplanar micro barrier discharges for an ultraviolet (UV) light source using Ne-Xe mixture have been investigated using a two-dimensional fluid simulation at near-atmospheric pressure. The densities of electrons, the radiative excited states, the metastable excited states, and the power loss are investigated with the variations of gas pressure and the gap distance. With a fixed gap distance, the number of the radiative states $Xe^*(^3P_1)$ increases with the increasing driving voltage, but this number shows weak dependency on the gas when that pressure is over 400 Torr. However, the number of the radiative states increases with the increase of the gap distance at a fixed voltage, while the power loss decreases. Therefore, a long gap discharge has higher efficiency for UV generation than does a short gap discharge. A slight change in the electrode tilt angle enhances the number of radiative species 2 or 3 times with the same operation conditions. Therefore, the intensity and efficiency of the UV light source can be controlled independently by changing the gap distance and the electrode structure.

Field Emission Characteristics of Deffctive Diamond Films

  • Koh, Ken-Ha;Park, Kyung-Ho;Lee, Soon-Il
    • Journal of the Korean Vacuum Society
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    • v.7 no.s1
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    • pp.160-166
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    • 1998
  • The field emission characteristics of defective diamond films grown by microwave plasma enhanced chemical vapor deposition (MPECVD) have been studied. X-ray diffraction, the poor crystal quality and/or small grain sizes of the diamond phase and the inclusion of the non-diamond carbon phases in these films have been condirmed by raman spectroscopy, scanning electron microscopy, atomic force microscopy, and the reflectance measurements. The degrees of the film defectiveness and the emission characteristics were dependent on the methane concentration. Current-versus-voltage measurements have demonstrated that the defective diamond films have good electron emission characteristics. characteristics strongly suggests the defect-related electron-emission mechanism. The defective diamond films deposited on Si substrates show the field emission current density of 1$\mu\textrm{A}/\textrm{cm}^2$ and 1mA/$\textrm{cm}^2$ have been measured at electric fields as low as 4.5V/$\mu\textrm{m}$ and 7.6V/$\mu\textrm{m}$, respectively. We also observed the similar emission characteristics from the defective diamond film deposited on Cr/Si substrate and could decrease the deposition temperature to $600^{\circ}C$.

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