• 한국염색가공학회지
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• 제2권3호
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• pp.8-13
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• 1990

In order to study the modification of wettability, tactility, and bathochromicity of the poly (ethylene Terephthalate) (PET) fabrics, low-temperature plasma$(O_2)$ has been irradiated on the PET fabrics in various conditions. The results obtained from this study were as follows; 1) The weight loss rate of plasma-treated PET fabrics is proportional to irradiation time and internal gas temperature of treating chamber. Also, the effect of weight loss is remarkable at gas pressure ranging from 3 torr to 5 torr. 2) The bathochromic effect of PET fabrics treated with low-temperature plasma$(O_2)$ was improved.

• 대한전기학회논문지
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• 제39권11호
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• pp.1227-1234
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• 1990

This study is to figure out the properties of the DC thermal plasma at low pressure. For this purpose, a temperature measurement system utilizing emission spectroscopy has been set up and its measurement method and results have been described. At low pressure, the plasma has shown drastic changes in its appearance. The discharge characteristics under low pressure have been measured and analyzed. The temperature of thermal plasma generated in this research has been ranged from 10, 000 K to 15, 000 K. Temperature has been observed to increase with the flow rate and magnetic field strength. The temperature characteristics at low pressure has been observed to coincide with the reported results.

• Applied Science and Convergence Technology
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• 제26권6호
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• pp.201-207
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• 2017

An electron-excited temperature ($T_{ex}$) is not determined by the Boltzmann plots only with the spectral data of $4p{\rightarrow}4s$ in an Ar-plasma jet operated with a low frequency of several tens of kHz and the low voltage of a few kV, while $T_{ex}$ can be obtained at least with the presence of a high energy-level transition ($5p{\rightarrow}4s$) in the high-voltage operation of 8 kV. The optical intensities of most spectra that are measured according to the voltage and the measuring position of the plasma column increase or decay exponentially at the same rate as that of the intensity variation; therefore, the excitation temperature is estimated by comparing the relative optical-intensity to that of a high voltage. In the low-voltage range of an Ar-jet operation, the electron-excitation temperature is estimated as being from 0.61 eV to 0.67 eV, and the corresponding radical density of the Ar-4p state is in the order of $10^{10}{\sim}10^{11}cm^{-3}$. The variation of the excitation temperature is almost linear in relation to the operation voltage and the position of the plasma plume, meaning that the variation rates of the electron-excitation temperature are 0.03 eV/kV for the voltage and 0.075 eV/cm along the plasma plume.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.93-93
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• 2016

Large scale integrated circuits (LSIs) has been improved by the shrinkage of the circuit dimensions. The smaller chip sizes and increase in circuit density require the miniaturization of the line-width and space between metal interconnections. Therefore, an extreme precise control of the critical dimension and pattern profile is necessary to fabricate next generation nano-electronics devices. The pattern profile control of plasma etching with an accuracy of sub-nanometer must be achieved. To realize the etching process which achieves the problem, understanding of the etching mechanism and precise control of the process based on the real-time monitoring of internal plasma parameters such as etching species density, surface temperature of substrate, etc. are very important. For instance, it is known that the etched profiles of organic low dielectric (low-k) films are sensitive to the substrate temperature and density ratio of H and N atoms in the H2/N2 plasma [1]. In this study, we introduced a feedback control of actual substrate temperature and radical density ratio monitored in real time. And then the dependence of etch rates and profiles of organic films have been evaluated based on the substrate temperatures. In this study, organic low-k films were etched by a dual frequency capacitively coupled plasma employing the mixture of H2/N2 gases. A 100-MHz power was supplied to an upper electrode for plasma generation. The Si substrate was electrostatically chucked to a lower electrode biased by supplying a 2-MHz power. To investigate the effects of H and N radical on the etching profile of organic low-k films, absolute H and N atom densities were measured by vacuum ultraviolet absorption spectroscopy [2]. Moreover, using the optical fiber-type low-coherence interferometer [3], substrate temperature has been measured in real time during etching process. From the measurement results, the temperature raised rapidly just after plasma ignition and was gradually saturated. The temporal change of substrate temperature is a crucial issue to control of surface reactions of reactive species. Therefore, by the intervals of on-off of the plasma discharge, the substrate temperature was maintained within ${\pm}1.5^{\circ}C$ from the set value. As a result, the temperatures were kept within $3^{\circ}C$ during the etching process. Then, we etched organic films with line-and-space pattern using this system. The cross-sections of the organic films etched for 50 s with the substrate temperatures at $20^{\circ}C$ and $100^{\circ}C$ were observed by SEM. From the results, they were different in the sidewall profile. It suggests that the reactions on the sidewalls changed according to the substrate temperature. The precise substrate temperature control method with real-time temperature monitoring and intermittent plasma generation was suggested to contribute on realization of fine pattern etching.

• 열처리공학회지
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• 제24권1호
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• pp.3-9
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• 2011

Plasma nitriding of stainless steels has been investigated over a range of temperature from 400 to $500^{\circ}C$ and time from 10 to 20 hours. Characterization of systematic materials was carried out in terms of mechanical properties and corrosion behaviors. The results showed that plasma nitriding conducted at low temperatures not only increased the surface hardness, but also improved the corrosion resistance of STS 316L, STS409L, and STS 420J2. It was found that plasma-nitriding treatment at $500^{\circ}C$ resulted in increasing the corrosion performance of STS 409L and STS 420J2, while STS 316L was observed with server and massive damage on surface due to the formation of CrN.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권9호
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• pp.413-416
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• 2002

It was reported that low temperature plasma developed by our group was apparently homogeneous and stable at atmospheric pressure, and was generated if the alumina was used as a dielectric insulating material and Ar gas as a plasma gas. This is a structure in which the dielectric materials are covered and arranged in parallel in the one side of electrode. In this experiment, we discovered that dielectric material was important to generate normal electric discharge. To examine the effect of dielectric material on the electric discharge characteristic, the voltage and current of the plasma was measured and the electrical effect of dielectric material was examined. Also, it was applied to an etching of tin oxide films.

• 전기학회논문지
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• 제56권3호
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• pp.577-582
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• 2007

The plasma display panel is an image expression display using gas discharge plasma. However, gas discharge characteristics vary with temperature as gas discharge is sensitive to temperature. The discharge time lag extends a lot in low temperature and it is known as the cause which hinders high speed addressing which is essential for the size enlargement of the panel. Accordingly this research aims at identifying the temperature-dependent discharge characteristic. The lower temperature becomes, the longer addressing discharge time lag becomes. Particularly the statistical time lag extends much in low temperature. The increasing of electric field shortens discharge time lag in low temperature. Also, when priming particles are sufficiently supplied, stable discharge can be performed regardless of the influence of temperature.

• 전자공학회논문지A
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• 제32A권3호
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• pp.68-77
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• 1995

Characteristics of electron cyclotron resonance (ECR) plasma thermal oxide grown at low-temperature have been investigated. The effects of several process parameters such as substrate temperature, microwave power, gas flow rate, and process pressure on the growth rate of the oxide have been also investigated. It was found that the plasma density, reactive ion species, is strongly related to the growth rate of ECR plasma oxied. It was also found that the plasma density increases with microwave power while it decreases with decreasing O2 flow rate. The oxidation time dependence of the oxide thichness showed parabolic characteristics. Considering ECR plasma thermal oxidation at low-temperature, the linear as well as parabolic rate constants calculated from fitting data by using the Deal-Grove model was very large in comparison with conventional thermal oxidation. The ECR plasma oxide grown on (100) crystalline-Si wafer exhibited good electrical characteristics which are comparable to those of thermal oxide: fixed oxide charge(N$_{ff}$)= 7${\times}10^{10}cm^{-2}$, interface state density(N$_{it}$)=4${\times}10^[10}cm^{-2}eV^{-1}$, and breakdown field > 8MV/cm.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.79-79
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• 2012

A high temperature and a low temperature plasma process technologies were developed and demonstrated for synthesis, hybrid formation, surface treatment and CVD engineering of nano powder. RF thermal plasma is used for synthesis of spherical nano particles in a diameter ranged from 10 nm to 100 nm. A variety of nano particules such as Si, Ni, has been synthesized. The diameter of the nano-particles can be controlled by RF plasma power, pressure, gas flow rate and raw material feed rate. A modified RF thermal plasma also produces nano hybrid materials with graphene. Hemispherical nano-materials such as Ag, Ni, Si, SiO2, Al2O3, size ranged from 30 to 100 nm, has been grown on graphene nanoplatelet surface. The coverage ranged from 0.1 to 0.7 has been achieved uniformly over the graphene surface. Low temperature AC plasma is developed for surface modification of nano-powder. In order to have a three dimensional and lengthy plasma treatment, a spiral type of reactor has been developed. A similar plasma reactor has been modfied for nano plasma CVD process. The reactor can be heated with halogen lamp.

• 한국염색가공학회지
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• 제16권3호
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• pp.14-21
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• 2004

In this research, we accomplished in order to improving color fastness of sublimation for Poly (vinyl alcohol) (PVA)-iodine polarized film. The poor iodine sublimation problem has greatly improved by $O_2$ low temperature plasma treatment. We obtained the followings: (1) plasma treatment has contributed in adhesive ability via peel strength, AFM image and roughness were investigated, But the improvement in adhesive strength was not linearly proportional to the treatment time. (2) $O_2$ plasma treated PVA-iodine polarized film was good enough as to maintain the transmittance and polarization even after iodine cone. of 0.05mol/L and dipping time of 50sec. (3) $O_2$ low temperature plasma treated PVA-iodine polarized film has obtain high durability because of good adhesive strength.