Improved Uniformity of Resistive Switching Characteristics in Ag/HfO2/Pt ReRAM Device by Microwave Irradiation Treatment (Microwave Irradiation 처리를 통한 Ag/HfO2/Pt ReRAM에서의 메모리 신뢰성 향상에 대한 연구)
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- Journal of the Korean Institute of Electrical and Electronic Material Engineers
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- v.27 no.2
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- pp.81-84
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- 2014