• Plant Breeding and Biotechnology
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• v.1 no.1
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• pp.1-8
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• 2013

Low-temperature stress is an important factor controlling the growth and development of rice (Oryza sativa L.) in temperate region. In this study, a molecular linkage map consisting of 136 SSR markers was employed to identify QTL associated with cold tolerance at the seedling stage. 80 recombinant inbred lines (RILs) from an intersubspecific cross between Milyang23 (O. sativa ssp. Indica) and Hapcheonaengmi3, a japonica weedy rice and the parents were evaluated for leaf discoloration and SAPD value of seedlings. Rice plants were grown for 15 days in the low-temperature condition (13/20℃ day/night) and the control condition (25/20℃ day/night) in the growth chamber. The degree of leaf discoloration showed a highly significant correlation with the SPAD value in the low-temperature plot (r = -0.708, P < 0.0001). A total of four QTLs for SPAD were identified and the phenotypic variance explained by each QTL ranged from 5.4 to 16.0%. Two QTLs detected in the control condition were located on chromosomes 2 and 5, respectively. Two QTL on chromosomes 1 and 4 were detected at the low-temperature condition and Hapcheonaengmi3 alleles increased the SPAD values at these loci. Substitution mapping was conducted to delimit the position of qSPA-4 using introgression lines derived from the same cross. Results indicated that qSPA-4 was located in a 810-Kb region flanked by RM16333 and RM16368. The results indicated that Hapcheonaengmi3 contains QTL alleles that are likely to improve cold tolerance of Indica rice.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.1
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• pp.27-32
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• 2014

This study analyzed the fundamental characteristics of concrete according to a ternary system mixing in order to reduce hydration heat of mass concrete and to improve early age strength. The results are as follows. The fluidity of unconsolidated concrete satisfied the target scope regardless of the binder conditions. When the replacement ratio between FA and BS increased, the slump of low heat-A mix and low heat-B mix increased, and air content was not affected by the change of binders. As for setting time, low heat cement mix had the fastest regardless of W/B, and high early strength low heat mix achieved 6 hours' reduction compared with low heat-B mix at initial set, and 12 hours' reduction at the final set respectively. As for the simple hydration heat, the low mix peak temperature was the highest and low heat-B mix had the lowest temperature. And high early strength low heat mix was similar with that of low heat-B. The compressive strength of hardened concrete had similar strength scope in all mixes except for low heat-B mix at early ages, and had unexceptionally similar one without huge differences at long-term ages.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.98-101
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• 2006

Electron transport properties of nanostructured Pb thin film, consisting of grains, have been studied. Nanostructured thin films were fabricated on a substrate held at low temperature and their thicknesses were less than 10nm. While temperature of the film increased from 1.3 K to room temperature, the change in normal state sheet resistance has been measured. As the annealing temperature varies, the normal state sheet resistance shows a non-monotonic and irreversible change. Such behavior can be understood with the Pb grain growth due to annealing of the film.

• Journal of Ginseng Research
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• v.3 no.2
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• pp.156-167
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• 1979

Physiological characteristics of Panax ginseng were reviewed in relation to temperature. According to the old literatures and records of cultivator's experiences it was elucidated that ginseng plants require light but hate high temperature and that the cultural methods were developed to content two characteristics in contradiction. Low temperature (cool climate) during growing season seems (or ginseng to be essential and to escape from the extreme coldness according to air and soil temperature of natural habitat and cultivated area. Optimum temperature of dehiscence (15∼below 20$^{\circ}C$) is a little higher than that of germination (10∼15$^{\circ}C$). Optimum temperature for growing of new buds (18∼20$^{\circ}C$) is similar to that for growing after emergence (17∼21$^{\circ}C$). Dormancy of both matured embryo and new buds is broken at the same temperature (2∼3$^{\circ}C$). It seems reasonable that optimum temperature of photosynthesis (22$^{\circ}C$) is similar to that of growth. Respiration quotients of various organs or of whole plant ranged from 1.7 to 3 incrased with high temperature. Respiratory consumption and oxygen limitation seem to be potential factors to induce decay during dehiscence and germination of seeds and root rot in fields. Research on organ differentiation. photosynthesis, respiration and growth with age is needed for the development of cultivation methods.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.66-69
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• 2001

Effect of $N_2$ flow rate on properties of GaN thin films grown by plasma-enhanced molecular beam epitaxy(PEMBE) was discussed to optimize the quality of thin films. It was found that at low $N_2$ flow rate indicating high III/V flux ratio, the growth rate of GaN thin films was controlled by $N_2$ flux, and at high $N_2$ flow rate the growth rate was not controlled by $N_2$ flux any longer. It was also found that III/V flux ratio affected film quality. The film grown at higher $N_2$ flow rate showed low background carrier concentration, higher carrier mobility, and narrow FWHM in band-edge emission of low temperature PL. It is thought that the film in more Ga flux region was grown by 2-dimensional layer-by-layer growth mode, and the film in more nitrogen region was grown by 3-D island growth mode. All samples exhibited a good crystallinity.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.229-230
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• 1997

• Proceedings of the Korean Society of Crop Science Conference
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• 2022.10a
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• pp.95-95
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• 2022

Maize is one of the world's three largest crops and has a long cultivation history, and is an important crop used for various purposes such as food, feed, and industrial raw materials. Recently, the agricultural environment is changing, in which the limit of cultivation of crops is shifted to the north due to the rise in temperature due to climate change. This study was conducted in experimental field of Suwon in 2022 by setting a seeding period earlier than the sowing time to establish the North Korean agricultural climatic zone and meteorological conditions. The test cultivars were silage cultivars, Kwangpyeongok and Dacheongok. As a priming test method, it was used to directly plant seeds in the field through immersion using 4mM zinc (Zn) and 2.5mM manganese (Mn), which are trace elements for seeds. The planting season was early on March 15th, April 1st, and April 15th. The number of days from sowing to silk stage of the two cultivars sown on March 15, April 1, and April 15 was 107, 93, and 85 days for Kwangpyeongok and 109, 95, and 87 days for Dacheongok, respectively. The seed priming test did not show any difference from the control group in the growth survey up to the middle stage of growth. In another test, low-temperature recovery was confirmed through nitrogen (2-5%) foliar fertilization after 3 days, 5 days, and 7 days in refrigeration (0 degrees), a selective low temperature treatment for com in the third leaf stage. As a result of this study, it was confirmed that the low-temperature damaged com treated at 0℃ showed the same growth as that of the untreated com through nitrogen foliar fertilization. These results suggest that urea foliar fertilization for low-temperature damage reduction of corn for silage in high-latitude climates will be helpful. In addition, through the results of the study, additional studies are needed on the recovery mechanism and field application through urea foliar fertilization.

• Korean Journal of Environmental Biology
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• v.39 no.4
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• pp.486-494
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• 2021

Watermelon (Citrullus lanatus (Thunb.) Matsum. & Nakai) is sensitive to low temperature and shows retarded growth under 10℃. Although early transplanting guarantees higher returns, it requires cost and labor to maintain the appropriate temperature for plant growth. Therefore, cultivars tolerant to chilling stress is necessary to reduce the cost and labor requirements. The purpose of this study is to analyze data on plant growth and fruit enlargement under continuous chilling night temperature to develop new cultivars tolerant to chilling temperature. Two cultivars expected to have chilling tolerance and another cultivar sensitive to chilling temperature were grown in greenhouses with chilling and optimal night temperature conditions. In the early growth stage after transplanting, the cultivars expected to have chilling tolerance showed better vine length, fresh weight and dry weight. However, one of the tolerant cultivars showed significantly lower vine length, leaf length and width, and petiole length than the sensitive cultivar during pollination period and later growth stage, showing genotype specific responses. The fruit length, width, and weight were also significantly lower in the tolerant cultivar. The fruit set ratio was significantly higher in the chilling sensitive cultivar than the two tolerant cultivars. These results suggest that the present chilling tolerant cultivars in watermelon were selected based on their performance in the early growth stage, and further studies on chilling tolerance in different growth and development stages are required to develop cultivars adapted to various forcing cultivation systems.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.5.2-5.2
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• 2009

From 10 years ago, the development of nano-devices endeavored to achieve reconstruction of information technology (IT) and nano technology (NT) industry. Among the many materials for the IT and NT industry, zinc oxide (ZnO) is a very promising candidate material for the research of nano-device development. Nano-structures of ZnO-based materials were grown easily via various methods and it attracts huge attention because of their superior electrical and optical properties for optoelectronic devices. Recently, among the various growth methods, MOCVD has attracted considerable attention because it is suitable process with benefits such as large area growth, vertical alignment, and accurate doping for nano-device fabrication. However, ZnO based nanowires grown by MOCVD process were had the principal problems of 1st interfacial layers between substrate and nanowire, 2nd a broad diameter (about 100 nm), and 3rd high density, and 4th critical evaporation temperature of Zinc precursors. In particular, the growth of high performance nanowire for high efficiency nano-devices must be formed at high temperature growth, but zinc precursors were evaporated at high temperature.These problems should be repaired for materialization of ultra high performance quantum devices with quantum effect. For this reason, we firstly proposed the growth method of vertical aligned slim MgZnO nanowires (< 10 nm) without interfacial layers using self-phase separation by introduced Mg at critical evaporation temperature of Zinc precursors ($500^{\circ}C$). Here, the self-phase separation was reported that MgO-rich and the ZnO-rich phases were spontaneously formed by additionally introduced Mg precursors. In the growth of nanowires, the nanowires were only grown on the wurzite single crystal seeds as ZnO-rich phases with relatively low Mg composition (~36 at %). In this study, we investigated the microstructural behaviors of self-phase separation with increasing the Mg fluxes in the growth of MZO NWs, in order to secure drastic control engineering of density,diameter, and shape of nanowires.

• Korean Journal of Materials Research
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• v.10 no.3
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• pp.241-245
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• 2000

Thick GaN films were grown on (0001) sapphire substrates using the direct reaction gallium and ammonia. The GaN films grew dominantly along [0002] direction, but included the growth of GaN(1010) planeq with V-shaped facetted surfaces at low temperature. With increasing growth temperature, however, the growth of GaN (1010) and (1011) planes was appeared from the films, which gives rise to the growth of hexagonal crystal with pyramid-shaped surface. The growth rate of GaN films increased with increasing growth temperature, but decreased at $1270^{\circ}C$ because the GaN films began to decompose into Ga and N at the temperature. It seemed that the crystal and optical qualities of the GaN films improve with increasing $NH_3$ flow rate. From X-ray diffraction (XRD) and photoluminescence (PL) measurements, it was observed that the yellow luminescence (YL) appeared to be significant as the peak intensity of (1010) plane of XRD spectra increased.