• 제목/요약/키워드: low sintering temperature

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중공형 미세구를 이용한 마이크로셀룰라 지르코니아의 가공 특성 고찰 (Investigation on the Pore Properties of the Microcellular ZrO2 Ceramics Using Hollow Microsphere)

  • 이은정;송인혁;김해두;김영욱;배지수
    • 한국세라믹학회지
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    • 제46권1호
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    • pp.108-115
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    • 2009
  • In this study, a novel-processing route for producing microcellular zirconia ceramics has been developed. The proposed strategy for making the microcellular zirconia ceramics involves hollow microsphere as a pore former which has extremely low density of $0.025\;g/cm^3$. Effects of hollow microsphere content and sintering temperature on microstructure, porosity, pore distribution, and compressive strength were investigated in the processing of microcellular zirconia ceramics. By controlling the content of hollow microsphere, it was possible to make the porous zirconia ceramics with porosities ranging from 45% to 75%. Typical compressive strength value of microcellular zirconia ceramics with ${\sim}65%$ porosity was over 50 MPa. By adjusting the mixing ratio of large and small zirconia powders, it was possible to control the pore structure from close to open pores.

펄스레이저법으로 증착 제조된 AlN박막의 타겟 효과 (Effect of Targets on Synthesis of Aluminum Nitride Thin Films Deposited by Pulsed Laser Deposition)

  • 정준기;하태권
    • 소성∙가공
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    • 제29권1호
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    • pp.44-48
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    • 2020
  • Aluminum nitride (AlN), as a substrate material in electronic packaging, has attracted considerable attention over the last few decades because of its excellent properties, which include high thermal conductivity, a coefficient of thermal expansion that matches well with that of silicon, and a moderately low dielectric constant. AlN films with c-axis orientation and thermal conductivity characteristics were deposited by using Pulsed Laser Deposition (PLD). The epitaxial AlN films were grown on sapphire (c-Al2O3) single crystals by PLD with AlN target and Y2O3 doped AlN target. A comparison of different targets associated with AlN films deposited by PLD was presented with particular emphasis on thermal conductivity properties. The quality of AlN films was found to strongly depend on the growth temperature that was exerted during deposition. AlN thin films deposited using Y2O3-AlN targets doped with sintering additives showed relatively higher thermal conductivity than while using pure AlN targets. AlN thin films deposited at 600℃ were confirmed to have highly c-axis orientation and thermal conductivity of 39.413 W/mK.

전자 및 이온 전도성 $CeO_2-Sm_2O_3$ 고체 전해질 막의 합성 및 응용 (Synthesis and Application of $CeO_2-Sm_2O_3$ Solid Electrolyte Membranes with Electronic and Ionic Conductivities)

  • 현상훈;권재환;김승구;김계태
    • 한국세라믹학회지
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    • 제35권4호
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    • pp.355-363
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    • 1998
  • The oxygen flux of SDC ($Sm_2O_3\;doped\;CeO_2$) solid electrolyte membranes with electronic and oxygen ion-ic conductivities has been investigated as a basic research in order to develop the conversion process of na-tural gas to syngas using the ceramic membrane reactor. Tube type membranes(1 mm thickness) were fa-bricated by slip casting of SDC powders prepared by the oxalate coprecipitaion method. Dense oxygen per-meation membranes(0.1 mm thickness) could be synthesized via sintering at $1450^{\circ}C$ for 2h and their re-lative density was over 95% The oxygen flux through SDC membranes doped 20mol% $Sm_15$ was about $1.13{\times}10^{-5}\;mol/m_2{\cdot}sec$ at low temperature around $800^{\circ}C$. In addition the SDC membranes showed a good thermaal stability for a long period of service.

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PZT-마이크로 변압기 제작과 특성 분석 (The Fabrication and Characteristics of microtransformer using PZT-based ceramics)

  • 김철수;김성곤;박정호;이상렬
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.149-152
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    • 2001
  • A great deal of attention has been focused on the application of miniaturized piezoelectric transformers to the low power source for the microsystem. The dielectric and piezoelectric properties of Pb(Mn,W,Sb,Nb)O$_3$-Pb(Zr,Ti)O$_3$ ceramics have been investigated on different calcination(750$^{\circ}C$∼950$^{\circ}C$) and sintering(1100$^{\circ}C$∼1300$^{\circ}C$) temperatures. The perovskitic phase was formed by the solid phase reaction of the oxides. Anisotropic (k$\sub$t/k$\sub$p/) properties of electromechanical coupling coefficient and piezoelectric coefficient have been proven to be depending on processing temperatures. The value of electromechanical coupling factor of K$\sub$p/>0.51 and a mechanical quality factor of Q$\sub$m/>2000 were obtained. The piezoelectric transformer was prepared using this ceramics with the composition of Pb(Mn,W,Sb,Nb)O$_3$-Pb(Zr,Ti)O$_3$ We studied the influence of different processing temperature on the microstructure and piezoelectric properties of complex PZT-based ceramics. and the characteristic of piezoelectric transformer.

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저온 소성용 Glass-Ceramics에서 glass의 softening point에 따른 소결 및 유전 특성 연구 (A study on the sintering and dielectric properties by softening point of glass in low temperature sinterable glass-ceramics)

  • 윤상옥;오창용;김관수;조태현;박종국
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.396-399
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    • 2004
  • 저온 동시소성용 glass-ceramics의 소결 경향성 연구를 위해 lead-borosilicate계 glass를 frit화하여 알루미나분말과 $TiO_2$분말을 $10{\sim}50\;vol%$로 각각 혼합한 후 여러 온도에서 소결하여 소결과 유전 특성을 조사하였다. 그 결과 glass의 연화온도(Ts)가 낮을수록 최대 치밀화 온도가 낮았으며, 반면에 소결밀도는 Ts가 높을수록 높았는데, 이는 glass-ceramicss에서의 결정화도와 관계하였다. 본 연구를 통해 glass-ceramic에서의 소결특성은 glass와 ceramic의 반응성에 의한 2상 석출 정도에 큰 영향을 받음을 알 수 있었으며, ceramic filler로서 알루미나와 $TiO_2$를 이용하여 $900^{\circ}C$에서 소성이 가능하였다. 알루미나의 경우 유전특성$({\epsilon}r=8.5,\;Q{\times}fo=6000)$이 기판용 저유전율 재료로 사용이 가능하였고, $TiO_2$의 경우도 유전특성($({\epsilon}r=17,\;Q{\times}fo=4000)$)이 필터용 고유전율 재료로 사용 가능하도록 높게 나타났다.

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Electrical Properties of Low Temperature Sintered $SrTiO_3$ Varistor

  • Seon, Ho-Won;Kim, Seong-Ho;Sahn Nahm;Kim, Yoonho
    • The Korean Journal of Ceramics
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    • 제5권3호
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    • pp.255-259
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    • 1999
  • The effects of $SiO_2$ and MnO addition on the sinterability and the electrical properties of 0.4mol% Nb-doped SrTiO3 varistor were investigated. The $SiO_2$ content was fixed at 0.3mol% and the MnO content varied from 0 to 1.0mol%. With 0.3 mol% $SiO_2$ and 0.3 mol% MnO addition, optimum density was obtained by sintering at $1200^{\circ}C$ without excess liquid phase. Impedance spectroscopy was performed on the sintered specimens with 0.3 mol% $SiO_2$ and various MnO contents. It was found that the resistivities of grains was increased with increasing MnO content. The dielectric constant was measured to be above 50000 in the specimen with 0.3~1.0mol% Mn content. The non-linear coefficient increased substantially with MnO addition, and it varied from 1 to 9 depending on the MnO content.

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Bi-2223 고온초전도 전류리드의 제조 (Fabrication of Bi-2223 high-Tc superconducting current lead)

  • 하동우;오상수;류강식;장현만
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1996년도 하계학술대회 논문집 C
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    • pp.1660-1662
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    • 1996
  • Superconducting current lead is one of the promising applications of the oxide high-Tc superconductors, because they have the advantage of decreasing heat conduction to low temperature region, comparing with a conventional cooper alloy lead. High critical current density is a key factor for the applications such as current lead. $(Bi,Pb)_{2}Sr_{2}Ca_{2}Cu_{3}O_{x}$ high Tc superconductor hase been investigated in terms of critical current density. Bi-2223 superconducting current lead made by CIP and solid state sintering process. Bi-2223 current lead that heat treated at $836\;^{\circ}C$ for 240 h in 1/13 $PO_2$ had over $500\;A/cm^2$ of critical current density at 77K. We knew that the superconducting properties of tube type current leads were better than rods type of them. And we investigated the relation of Bi-2223 formation and heat treatment condition by XRD and SEM analysis.

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Effect of Process Conditions on the Microstructure of Particle-Stabilized Al2O3 Foam

  • Ahmad, Rizwan;Ha, Jang-Hoon;Hahn, Yoo-Dong;Song, In-Hyuck
    • 한국분말재료학회지
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    • 제19권4호
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    • pp.278-284
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    • 2012
  • $Al_2O_3$ foam is an important engineering material because of its exceptional high-temperature stability, low thermal conductivity, good wear resistance, and stability in hostile chemical environment. In this work, $Al_2O_3$ foams were designed to control the microstructure, porosity, and cell size by varying different parameters such as the amount of amphiphile, solid loading, and stirring speed. Particle stabilized direct foaming technique was used and the $Al_2O_3$ particles were partially hydrophobized upon the adsorption of valeric acid on particles surface. The foam stability was drastically improved when these particles were irreversibly adsorbed at the air/water interface. However, there is still considerable ambiguity with regard to the effect of process parameters on the microstructure of particle-stabilized foam. In this study, the $Al_2O_3$ foam with open and closed-cell structure, cell size ranging from $20{\mu}m$ to $300{\mu}m$ having single strut wall and porosity from 75% to 93% were successfully fabricated by sintering at $1600^{\circ}C$ for 2 h in air.

The Study on the Fabrication and Characterization of Dielectric Materials of Front and Back Panel for PDP(Plasma Display Panel)

  • Chang, Myeong-Soo;Lee, Yoon-Kwan;Ryu, Byung-Gil;Park, Myung-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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    • pp.181-182
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    • 2000
  • The glass compositions of $PbO-SiO_2-B_2O_3$ system and $P_2O_5-PbO-ZnO$ system for the transparent dielectric materials for front panel and $P_2O_5-ZnO-BaO$ and $SiO_2-ZnO-B_2O_3$ for the reflective dielectric materials for back panel of PDP(Plasma Display Panel) were investigated. As a transparent dielectric materials for front panel, $PbO-SiO_2-B_2O_3$ glass showed good dielectric properties, high transparency and proper thermal expansion matching to soda-lime glass substrate. And the reflective dielectric materials for back panel were prepared from parent glass of $SiO_2-ZnO-B_2O_3$ system and oxide filler. It was found that these glass-ceramics are useful materials for reflective dielectric layers, as those have a similar thermal expansion to soda-lime glass plate, high reflectance, low sintering temperature.

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공침법에 의한 $BaTi_4O_9, Ba_2Ti_9O_{20}$$BaTi_5O_{11}$화합물의 합성 및 그의 전기적, 열적 특성 (Synthesis of $BaTi_4O_9, Ba_2Ti_9O_{20}$ and $BaTi_5O_{11}$ Compounds by Coprecipitation Method and Their Electrical and Thermal Properties)

  • 김종옥;손우창;전성용;이경희;이병하
    • 한국세라믹학회지
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    • 제31권9호
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    • pp.1005-1011
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    • 1994
  • The three different composition of BaTi4O9, Ba2Ti9O20 and BaTi5O11 were prepared by coprecipitation process, and then the dielectric properties of these compounds were measured at low microwave frequencies. The powder showing high level of purity was synthesised by the coprecipition reaction of BaCl2 and TiCl4 where (NH4)2CO3 and NH4OH were used as a deflocculent. Followings are the result of this study: 1. The sintering temperature increased with increasing TiO2 content. 2. BaTi4O9 powder were synthesized as a single phase by this processing technique, but the resultant Ba2Ti9O20 and BaTi5O11 phase existed with Ba2Ti9O20 and BaTi5O11 phases. 3. Single phase BaTi4O9 showed high dielectric constant value of 35, high Q value of 8100.

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