• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.308-309
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• 2012

One of the critical issues in the growth of multijunction solar cell is the formation of a highly doped Esaki interband tunnel diode which interconnects unit cells of different energy band gap. Small electrical and optical losses are the requirements of such tunnel diodes [1]. To satisfy these requirements, tens of nanometer thick gallium arsenide (GaAs) can be a proper candidate due to its high carrier concentration in low energy band gap. To obtain highly doped GaAs in molecular beam epitaxy, the temperatures of Si Knudsen cell (K-cell) for n-type GaAs and Be K-cell for p-type GaAs were controlled during GaAs epitaxial growth, and the growth rate is set to 1.75 A/s. As a result, the doping concentration of p-type and n-type GaAs increased up to $4.7{\times}10^{19}cm^{-3}$ and $6.2{\times}10^{18}cm^{-3}$, respectively. However, the obtained n-type doping concentration is not sufficient to form a properly operating tunnel diode which requires a doping concentration close to $1.0{\times}10^{19}cm^{-3}$ [2]. To enhance the n-type doping concentration, n-doped GaAs samples were grown with a lower growth rate ranging from 0.318 to 1.123 A/s at a Si K-cell temperature of $1,180^{\circ}C$. As shown in Fig. 1, the n-type doping concentration was increased to $7.7{\times}10^{18}cm^{-3}$ when the growth rate was decreased to 0.318 A/s. The p-type doping concentration also increased to $4.1{\times}10^{19}cm^{-3}$ with the decrease of growth rate to 0.318 A/s. Additionally, bulk resistance was also decreased in both the grown samples. However, a transmission line measurement performed on the n-type GaAs sample grown at the rate of 0.318 A/s showed an increased specific contact resistance of $6.62{\times}10^{-4}{\Omega}{\cdot}cm^{-2}$. This high value of contact resistance is not suitable for forming contacts and interfaces. The increased resistance is attributed to the excessively incorporated dopant during low growth rate. Further studies need to be carried out to evaluate the effect of excess dopants on the operation of tunnel diode.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 추계학술대회
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• pp.324-324
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• 2006

Nb and Ti were added to 316 stainless steel, and then heat-treatments and surface treatments were performed on the 316 stainless steel and the Nb- and Ti-added alloys. All samples indicated enhanced electrical conductivity after surface treatments, whereas they showed low electrical conductivity before surface treatments due to the existence of non-conductive passive film on the alloy surface. In particular, the Hb- and Ti-added alloys showed remarkable enhancement of electrical conductivity compared to the original alloy, 316 stainless steel. Surface characterization revealed that small carbide particles formed on the alloy surface after surface treatments, while the alloys indicated flat surface structure before surface treatments. $Cr_{23}C_6$ mainly formed on the 316 stainless steel, and NbC and TiC mainly formed on the Nb- and Ti-added alloys, respectively. We attribute the enhanced electrical conductivity after surface treatments to the formation of these carbide particles, possibly acting as a means of electro-conductive channel through the passive film. Furthermore, NbC and TiC are supposed to be more effective carbides than $Cr_{23}C_6$ as electro-conductive channels of stainless steel

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.347.1-347.1
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• 2016

Screen printing is commonly used to form the electrode for crystalline silicon solar cells. However, it has caused high resistance and low aspect ratio, resulting in decrease of conversion efficiency. Accordingly, Ni/Cu/Ag plating method could be applied for crystalline silicon solar cells to reduce contact resistance. For Ni/Cu/Ag plating, laser ablation process is required to remove anti-reflection layers prior to the plating process, but laser ablation results in surface damage and then decrease of open-circuit voltage and cell efficiency. Another issue with plating process is ghost plating. Ghost plating occurred in the non-metallized region, resulting from pin-hole in anti-reflection layer. In this paper, we investigated the effect of Ni/Cu/Ag plating on the electrical properties, compared to screen printing method. In addition, phosphoric acid layer was spin-coated prior to laser ablation to minimize emitter damage by the laser. Phosphorous elements in phosphoric acid generated selective emitter throughout emitter layer during laser process. Then, KOH treatment was applied to remove surface damage by laser. At this step, amorphous silicon formed by laser ablation was recrystallized during firing process and remaining of amorphous silicon was removed by KOH treatment. As a result, electrical properties as Jsc, FF and efficiency were improved, but Voc was lower than screen printed solar cells because Voc was decreased due to surface damage by laser process. Accordingly, we expect that efficiency of solar cells could be improved by optimization of the process to remove surface damage.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.144-144
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• 2008

Blue light emitting diode structures consisting of the InGaN/GaN multiple quantum wells were grown by metalorganic chemical vapor deposition at different growth temperatures for the p-GaN contact layers and the influence of growth temperature on the emission and microstructural properties was investigated. The I-V and electroluminescence measurements showed that the sample with a p-GaN layer grown at $1084^{\circ}C$ had a lower electrical turn-on voltage and series resistance, andenhanced output power despite the low photoluminescence intensity. Transmission electron microscopy (TEM) revealed that the intense electro luminescence was due to the formation of a p-GaN layer with an even distribution of Mg dopants, which was confirmed by TEM image contrast and strain evaluations. These results suggest that the growth temperature should be optimized carefully to ensurethe homogeneous distribution of Mg as well as the total Mg contents in the growth of the p-type layer.

• 통상정보연구
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• 제19권3호
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• pp.153-174
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• 2017

시대환경변화에 따라 각국의 젊은이들은 다양한 문화를 습득하기 때문에 공통적인 문화를 형성하며, 타국의 문화를 쉽게 수용할 수 있다. 이에 기존의 선행연구 즉, E. T. Hall(1959)의 고배경문화와 저배경문화 그리고 Hofstede(1991)의 5개 차원(권력거리, 불확실성회피, 개인 또는 집단주의, 남성성 또는 여성성, 장기적지향성)을 기본으로 하여 한국의 젊은 청년들은 이문화변화가 어떻게 형성되고 있는지 그리고 이들 이문화 형성에 따른 협상이 어떻게 진행될 것인지 예측모형을 도출하여 미래의 한국 통상협상 모형을 재정립하고자 하는데 연구의 목적을 두고 있다. 한국인 젊은이는 집단주의 문화권을 가지고 있는 것으로 나타났으며, 불확실성 회피 성향이 있다는 기존의 선행연구와 일치하는 것으로 분석되었다. 반면 한국인은 장지지향성이 있으며, 권력간격이 매우 높으며, 남성주의가 강할 것이라는 실증분석 결과 반대의 경향이 나타나고 있다. 대체적으로 한국 젊은이의 이문화 변화 유형은 남성주의보다는 여성주의 경향이 강하며, 가부장적이고 권위적인 측면보다는 가정적인 측면으로 변화함에 따라 권력간격이 낮은 유형으로 변모하고 있다. 또한 장기지향적인 성향이 아니며, 즉각적인 어떠한 사안에 즉각적인 반응과 해결하고 하는 유형으로 변화하고 있다.

• 마이크로전자및패키징학회지
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• 제26권2호
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• pp.31-43
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• 2019

본 연구에서는 유연한 접속부를 갖는 유연전자 패키지 플립칩 접속을 위해 폴리머 탄성범프를 제작하였으며, 범프의 온도 및 하중에 따른 폴리머 탄성 범프의 점탄성 및 점소성 거동을 해석 및 실험적으로 분석하고 비교 평가하였다. 폴리머 탄성 범프는 하중에 의한 변형이 용이하여 범프 높이 평탄도 오차의 보정이 용이할 뿐만 아니라 소자가 형성된 칩에 가해지는 응력 집중이 감소하는 것을 확인하였다. 폴리머 탄성 범프의 과도한 변형에 따른 Au Metal Cap Crack 현상을 보완하여 $200{\mu}m$ 직경의 Spiral Cap Type, Spoke Cap type 폴리머 탄성 범프 형성 기술을 개발하였다. 제안된 Spoke Cap, Spiral Cap 폴리머 탄성 범프는 폴리머 범프 전체를 금속 배선이 덮고 있는 Metal Cap 범프에 비해 범프 변형에 의한 응력 발생이 적음을 확인할 수 있으며 이는 폴리머 범프 위의 금속 배선이 부분적으로 패터닝되어 있어 쉽게 변형될 수 있는 구조이므로 응력이 완화되는데 기인하는 것으로 판단된다. Spoke cap type 범프는 패드 접촉부와 전기적 접속을 하는 금속 배선 면적이 Spiral Cap type 범프에 비해 넓어 접촉 저항을 유지하면서 동시에 금속 배선에 응력 집중이 가장 낮은 결과를 확인하였다.