• Nano
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• 제13권10호
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• pp.1850124.1-1850124.12
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• 2018

$TiO_2$ films were deposited from oxygen/titanium tetraisopropoxide (TTIP) plasmas at low temperature by Helicon-PECVD at floating potential ($V_f$) or substrate self-bias of -50 V. The influence of titanium precursor partial pressure on the morphology, nanostructure and optical properties was investigated. Low titanium partial pressure ([TTIP] < 0.013 Pa) was applied by controlling the TTIP flow rate which is introduced by its own vapor pressure, whereas higher titanium partial pressure was formed through increasing the flow rate by using a carrier gas (CG). Then the precursor partial pressures [TTIP+CG] = 0:027 Pa and 0.093 Pa were obtained. At $V_f$, all the films exhibit a columnar structure, but the degree of inhomogeneity is decreased with the precursor partial pressure. Phase transformation from anatase ([TTIP] < 0.013 Pa) to amorphous ([TTIP+CG] = 0:093 Pa) has been evidenced since the $O^+_2$ ion to neutral flux ratio in the plasma was decreased and more carbon contained in the film. However, in the case of -50 V, the related growth rate for different precursor partial pressures is slightly (~15%) decreased. The columnar morphology at [TTIP] < 0.013 Pa has been changed into a granular structure, but still homogeneous columns are observed for [TTIP+CG] = 0:027 Pa and 0.093 Pa. Rutile phase has been generated at [TTIP] < 0:013 Pa. Ellipsometry measurements were performed on the films deposited at -50 V; results show that the precursor addition from low to high levels leads to a decrease in refractive index.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
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• pp.34-46
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• 2002

Si-O-C-H films with a low dielectric constant were deposited on a p-type Si(100) substrate using a mixture gases of the bis-trimethylsilyl-methane (BTMSM) and oxygen by an inductively coupled plasma chemical vapor deposition (ICPCYD). High density plasma of about $~10^{12}\textrm{cm}^{-3}$ is obtained at low pressure (<400 mTorr) with rf power of about 300W in ICPCVD where the BTMSM and $O_2$ gases are fully dissociated. Fourier transform infrared (FTIR) spectra and X-ray photoelectron spectroscopy (XPS) spectra show that the film has $Si-CH_3$ and OH-related bonds. The void within films is formed due to $Si-CH_3$ and OH-related bonds after annealing at $500^{\circ}C$ for the as-deposition samples. The lowest relative dielectric constant of annealed film at $500^{\circ}C$ is about 2.1.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1382-1384
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• 1995

In order to study the structure of RF glow discharge driven at 13.56MHz in argon, the discharge voltage, current and phase shift between them will be measured over a wide range of discharge parameters(gas pressure between 1mTorr and 50mTorr with discharge power between 20mW and 200W). In this paper, the dc glow discharge characteristics and plasma parameters of both FTS and CPMS systems are studied experimentally. It is found that for CPMS system discharge is stablized under wider ranges of magnetic field and pressure than for FTS system. The plasma density and electron temperature of the plasma for these two systems are in the range of $10^{10}{\sim}7{\times}10^{11}[cm^{-3}]$ and $3.5{\sim}6.5$[eV], respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 하계종합학술대회 논문집
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• pp.426-428
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• 1989

As a first phase of plasma study intended for semiconductor processing research, we have studied the discharge phenomena. In particular, we have obtained a specific formula for the breakdown voltage as a function of the neutral state pressure of reactive gases. Our experimental results with H2,O2,Ar,CF4 seem ro verify this formula. In addition we find the voltage levels for various gases in the descending order of CF4>O2=Ar>H2 in high pressure region, while H2>CF4>O2>Ar in low pressure region. When H2 and CF4 were mixed, we observe the overall voltage dominated by the gas with lower breakdown volotage.

• 한국전기전자재료학회논문지
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• 제13권2호
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• pp.163-169
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• 2000

In this paper, we showed the erosion characteristic of MgO protector layer releated to lifetime of plasma display panel(PDP). We observed MgO erosion characteristic as a functions of deposition conditions, pressure and distance between electrodes. In RIE condition of Xe gas, the lowest erosion rate appears in the conditions of no heating bias voltage -30V and pressure 5mtorr. In general, as deposition rate increases, erosion rate decreases. In real panel, when the gap distance between electrodes is narrow and the pressure is low, the heavy plasma damage appears. Also, the surfaces between electrodes and on the bus electrode are extremely damaged.

• 한국우주과학회:학술대회논문집(한국우주과학회보)
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• 한국우주과학회 2000년도 한국우주과학회보 제9권1호
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• pp.54-54
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• 2000

No Abstract, See Full Text

• Elastomers and Composites
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• 제35권4호
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• pp.296-302
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• 2000

신발 중창용 EVA 발포체의 수용성 폴리우레탄계 접착제에 대한 접착력을 증가시키기 위하여 발포체 표면을 저온 플라즈마 처리하였다. 플라즈마 처리기체 종류, 플라즈마 처리시간, 전극과 시료와의 거리등의 조건에 따른 발포체의 표면형태, 접촉각 및 수성폴리우레탄에 대한 접착력 등을 주사전자현미경, 접촉각 측정기, 인장강도시험기 등을 사용하여 측정하였다. 플라즈마 처리시간이 증가함에 따라 플라즈마 에칭에 의한 표면 형태의 변화가 더욱 뚜렷하게 나타났으며, 물로 측정한 발포체의 표면 접촉각은 현저히 감소하였다. 플라즈마 처리시간이 증가함에 따라 접착력은 현저히 증가하였다.

• 전자공학회논문지A
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• 제32A권3호
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• pp.68-77
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• 1995

Characteristics of electron cyclotron resonance (ECR) plasma thermal oxide grown at low-temperature have been investigated. The effects of several process parameters such as substrate temperature, microwave power, gas flow rate, and process pressure on the growth rate of the oxide have been also investigated. It was found that the plasma density, reactive ion species, is strongly related to the growth rate of ECR plasma oxied. It was also found that the plasma density increases with microwave power while it decreases with decreasing O2 flow rate. The oxidation time dependence of the oxide thichness showed parabolic characteristics. Considering ECR plasma thermal oxidation at low-temperature, the linear as well as parabolic rate constants calculated from fitting data by using the Deal-Grove model was very large in comparison with conventional thermal oxidation. The ECR plasma oxide grown on (100) crystalline-Si wafer exhibited good electrical characteristics which are comparable to those of thermal oxide: fixed oxide charge(N$_{ff}$)= 7${\times}10^{10}cm^{-2}$, interface state density(N$_{it}$)=4${\times}10^[10}cm^{-2}eV^{-1}$, and breakdown field > 8MV/cm.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.142-142
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• 2011

Microwave diagnostics method for plasma science and engineering is vigorous research area for its good characteristics such as high sensitivity, reliability, and broad measurement spectrum from low density plasma to high density. We investigate mechanism of microwave probes (hairpin, impedance and absorbtionf probe) and apply it for interpretation of full transmitted spectrum of cutoff probe. Mechanism of the spectrum having same key roles of I-V curve of Langmuir probe is not exactly revealed yet in spite of its importance. This study elucidates physics behind it using a circuit model and E/M wave simulation. Circuit model reveals exact cut-off peak frequency taking account of a collision frequency and a plasma frequency and it enable precise diagnostics of plasma densty from low pressure to high pressre. Cut-off like peaks have been obstacle for choosing cut-off peak is analyzed by E/M simulation and one of cutoff like peaks made by probe holder used for acquire plasma density with cutoff peak applying the hairpin relation. Furthermore, phase difference method for plasma density is conducted. This method uses a single microwave frequency source and it is low-priced.

• 한국진공학회지
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• 제9권4호
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• pp.428-435
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• 2000

정전 탐침을 이용하여 유도 결합형 반응기에서 발생하는 산소 플라즈마의 음이온 발생 특성을 관찰하였다. 입력전력과 운전압력 조건에 따른 산소 플라즈마에서 electronegative 음이온 플라즈마의 입력전력과 운전압력에 따른 정전 탐침에 흐르는 포화 양 전류 대 포화 음 전류(전자 전류와 음 이온 전류의 합)의 전류 비율과 플라즈마 부유 전위와 플라즈마 전위 차의 변화로부터 음이온 발생 특성관찰을 하였다. 전류비의 증가와 전위차 값의 감소는 입력전력이 증가함에 따라 약 30∼60 mTorr 운전압력 영역에서 나타났으며 이 조건에서 음이온의 발생량이 증가함을 의미하고, 플라즈마내의 이온들은 음이온과 재결합에 의한 손실이 증가하여 플라즈마 밀도가 감소함을 알 수 있었다.