• 제목/요약/키워드: low pressure of oxygen

검색결과 434건 처리시간 0.025초

Preparation of Zone-melted NdBaCuO under Low Oxygen Pressure

  • Soh, Dea-Wha;Fan, Zhan-Guo;Gao, Wei-Ying;Jeon, Jong-Woo
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.85-88
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    • 2001
  • The NdBaCuO superconductor samples were Zone-melted in low oxygen partial pressure (1% $O_{2}+ 99% Ar$ ). The Zone-melting temperature was decreased about $120^{\circ}C$ from $1060^{\circ}C$ the zone-melting temperature in air. Thus the loss of liquid phase ($BaCuO_{2}$ and CuO) was reduced during the zone-melting process. The content of non-superconducting phase Nd422 in zone-melted NdBaCuO samples was clearly decreased, so was the substitution of Nd for Ba. The superconductivity of zone-melted $Nd_{1+x}Ba_{2-x}Cu_{3}O_{y}$ prepared under low oxygen partial pressure was distinctively improved.

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Preparation of Zone-melted NdBaCuO under Low Oxygen Pressure

  • wha, Soh-Dea;guo, Fan-Zhan;ying, Gao-Wei;Jeon Yongwoo
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.85-88
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    • 2001
  • The NdBaCuO superconductor samples were Zone-melted in low oxygen partial pressure (1% O$_2$+99% Ar). The Zone-melting temperature was decreased about 120$^{\circ}C$ from 1060$^{\circ}C$ the zone-melting temperature in air. Thus the loss of liquid phase (BaCuO$_2$ and CuO) was reduced during the zone-melting process. The content of non-superconducting phase Nd422 in zone-melted NdBaCuO samples was clearly decreased, so was the substitution of Nd for Ba. The superconductivity of zone-melted Nd$\sub$1+x/Ba$\sub$2-x/Cu$_3$O$\sub$y/ prepared under low oxygen partial pressure was distinctively improved.

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Zone-melting of EPD $YBa_2Cu_3O_x$ Thick Film under Low Oxygen Partial Pressure

  • 소대화
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.263-266
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    • 2003
  • The fine $YBa_2Cu_3O_x$ powder ($0.2{\sim}1.0\;{\mu}m$) is produced by sol-gel method, and electrophoresis deposition is used for the preparation of $YBa_2Cu_3O_x$ thick films which are deposited on Ag wire. The oriented $YBa_2Cu_3O_x$ was tried to be prepared by the zone-melting method under low oxygen partial pressure. The orientation and the phase composition were examined by the X-ray diffraction and the superconductivities were measured by 4 line method. The critical current densities are still quite low, which may be due to unsuitable technical parameters for zone-melting of $YBa_2Cu_3O_x$ thick films. Therefore the heat treatment condition and controlling of low oxygen partial pressure should be improved in the future experiment.

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$TiO_2$ 반도체 용사피막의 광전극 특성에 미치는 용사조건의 영향 (Effects of Plasma Spray Conditions on Photoelectric Properties of Plasma Sprayed $TiO_2$ Semiconductor)

  • 박정식;박경채
    • Journal of Welding and Joining
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    • 제12권1호
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    • pp.94-101
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    • 1994
  • In this study, plasma spraying has been used to produce $TiO_2$ polycrystalline coatings from $TiO_2$ powders. The physical and chemical properties of plasma sprayed $TiO_2$ coatings depend greatly on plasma spraying conditions. The electrical resistivity, oxygen concentration, photocurrent and crystal structure of plasma sprayed $TiO_2$ coating has been studied. The results are as follows: 1. The oxygen loss and electrical conductivity of $TiO_2$ plasma sprayed coatings increased by low pressure and high amount of auxiliary gas, hydrogen in plasma spraying. 2. Oxygen loss increase electrical conductivity, and decrease photocurrent of $TiO_2$ plasma sprayed coatings. 3. Photocurrent of $TiO_2$ plasma sprayed coatings manufactured in atmospheric pressure is higher than that of low pressure.

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Zone-melting Process of NdBaCuO under Low Oxygen Pressure

  • Soh, Dea-Wha
    • Transactions on Electrical and Electronic Materials
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    • 제3권2호
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    • pp.24-27
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    • 2002
  • The NdBaCuO superconductor samples were zone-melted in low oxygen partial pressure (1%O$_2$+99%Ar). The zone-melting temperature was decreased about 12$0^{\circ}C$ film 1,06$0^{\circ}C$, the zone-melting temperature in air. Thus the loss of liquid phase (BaCuO$_2$ and CuO) was reduced during: the zone-melting process. The content of non-superconducting phase Nd422 in zone-melted NdBaCuO samples was clearly decreased and, therefore, the substitution of Nd for Ba was occurred. The superconductivity of zone-melted Nd$_{1+x}$Ba$_{2-x}$Cu$_3$O$_{y}$ prepared under low oxygen partial pressure was distinctively improved.d.d.d.

Conductivity measurements at low oxygen partial pressure of the stabilized $ZrO_{2}$ ceramics prepared by SHS

  • Soh, Dea-Wha;Korobova, Natalya
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.451-454
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    • 2001
  • The ionic conductivity of cubic solid solutions in the system $Y_{2}O_{3}-ZrO_{2}$ prepared by SHS was examined. Conductivity-temperature data obtained at $1000^{\circ}C$ in atmosphere of low oxygen partial pressure ($10^{-40}$ atm) for $Y_{2}O_{3}-ZrO_{2}$ cubic solid solutions indicated that these materials could be reduced, the degree of reduction being related to the measuring electric field. At low impressed fields no reduction was observed. Thus, these conductivity data give a transference number for the oxygen ion in $Y_{2}O_{3}-ZrO_{2}$ cubic solid solutions greater than 0.99.

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The Strategy to Fabricate the MTiO3(M = Sr, Ba) Thin Films by Laser Ablation

  • Im, T.M.;Park, J.Y.;Kim, H.J.;Choi, H.K.;Jung, K.W.;Jung, D.
    • Bulletin of the Korean Chemical Society
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    • 제29권2호
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    • pp.427-430
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    • 2008
  • BaTiO3 and SrTiO3 thin films were fabricated on Pt/Ti/SiO2/Si substrate by the pulsed laser deposition process. The dependence of the deposited film quality upon the partial oxygen pressure during the deposition process was importantly examined. Regardless of the oxygen pressure, the as-deposited films were not fully crystallized. However, the film deposited at low oxygen pressure became well crystallized after the annealing process. It was concluded, therefore, that the partial oxygen pressure is reduced as low as possible during the deposition process and then anneal the as-deposited samples at ambient pressure to fabricate the well crystallized SrTiO3 and BaTiO3 films by laser ablation.

Conductivity measurements at lwo oxygen partial pressure of the stabilized ZrO$_2$ ceramics preared by SHS

  • Soh, Deawha;Korobova, Natalya
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.451-454
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    • 2001
  • The ionic conductivity of cubic solid solutions in the system Y$_2$O$_3$-ZrO$_2$ prepared by SHS was examined. Conductivity-temperature data obtained at 1000$^{\circ}C$ in atmosphere of low oxygen partial pressure (10$\^$-40/ atm) for Y$_2$O$_3$-ZrO$_2$ cubic solid solutions indicated that these materials could be reduced, the degree of reduction being related to the measuring electric field. At low impressed fields no reduction was observed. Thus, these conductivity data give a transference number for the oxygen ion in Y$_2$O$_3$-ZrO$_2$ cubic solid solutions greater than 0.99.

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분류층 건식 석탄가스화기에서의 가스화 특성 (Gasification characteristics in an entrained flow coal gasifier)

  • 유영돈;윤용승;안달홍;박호영
    • 대한기계학회논문집B
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    • 제21권12호
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    • pp.1690-1700
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    • 1997
  • Entrained coal gasification tests with Datong coal were performed to assess the influence of oxygen/coal ration and pressure. When gasification condition in oxygen/coal ratio has changed from 0.5 to 1.0, optimal gasification condition from low pressure runs was oxygen/coal ratio of approximately 0.9 where CO was produced about 40% and H, about 20%. Under the pressure condition of 12-14 atmospheres, optimal oxygen/coal ratio value was in the region of 0.6 where CO was produced about 55% and H2about 25%. From these results, it was found that the oxygen/ coal ratio for the maximum production of CO and H, was decreasing with the increase in gasifier pressure and also, with increasing oxygen content, carbon conversion was increased. For the Chinese Datong coal, cold gas efficiency was in the range of 40-80%.

Electrical Conductivity of a $TiO_2$ Thin Film Deposited on $Al_2O_3$ Substrates by CVD

  • Hwang, Cheol-Seong;Kim, Hyeong-Joon
    • The Korean Journal of Ceramics
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    • 제1권1호
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    • pp.21-28
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    • 1995
  • Electrical conductivity of $TiO_2$ thin films, deposited on $Al_2O_3$ substrates by metal organic chemical vapor deposition (MOCVD), was measured by four-point probe method in a temperature range from $800^{\circ}C$ to $1025^{\circ}C$ and an oxygen partial pressure range from $2.7{\times}10^{-5}$ atm to 1 atm. In the low oxygen partial pressure region n-type conduction was dominant, but in the high oxygen partial pressure region p-type conduction behavior appeared due to substitution of Ti ions by Al ions, which were diffused from the substrate during post deposition annealing process. Electrical conductivity of the film decreases in the n-type region and increases in the p-type region as the oxygen partial pressure increases. The transition points, which show the minimum conductivity, shifted to the higher oxygen partial pressure region as the measuring temperature increased, but it shifted to lower oxygen partial pressure region with an increase in the post annealing temperature. The results were also discussed with the possible defect models.

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