• Journal of Sensor Science and Technology
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• v.19 no.6
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• pp.462-468
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• 2010

A low power gas sensor with microheater was fabricated by MEMS technology. In order to heat up the gas sensing material to a operating temperature, a platinum(Pt) micro heater was built on to the micromachined Si substrate. The width and gap of microheater were $20\;{\mu}m$ and $4.5\;{\mu}m$, respectively. ZnO nanowhisker arrays were fabricated on a sensor device by hydrothermal method. The sensor device was deposited with ZnO seeds using PLD systems. A 200 ml aqueous solution of 0.1 mol zinc nitrate hexahydrate, 0.1 mol hexamethylenetetramine, and 0.02 mol polyethylenimine was used for growthing ZnO nanowhiskers. The power consumption to heat up the gas sensor to a operating temperature was measured and temperature distribution of sensor was analyzed by a Infrared Thermal Camera. The optimum temperature for highest sensitivity was found to be $250^{\circ}C$ although relatively high(64 %) sensitivity was obtained even at as low as $150^{\circ}C$. The power consumption was 72 mW at $250^{\circ}C$ and was only 25 mW at $150^{\circ}C$.

• Journal of Convergence Society for SMB
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• v.6 no.4
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• pp.25-30
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• 2016

This paper presents on the development of a compact anti-lost device requested recently. The proposed device consists of the master and slave modules based on Bluetooth4.1 technology. To implement a low-power characteristic, an algorithm has been also developed. The transmitting and receiving circuits are designed by using BoT CLE110 module supporting Bluetooth 4.1. The ATmega 328P-AU was used for the control and LP3874EMP was used as a linear regulator. Power consumption of the fabricated product in operating mode is only 10mAh and 35mAh for MCU operating state. Alarm operation distance is $10m{\pm}30%$, the effective radiated power is less than 10mW, the frequency band is designed to operate in the Bluetooth band with 26MHz bandwidth. And algorithms have been developed to extend the battery life. The size of the product was obtained as $45{\times}45{\times}15mm$ for master and $35{\times}35{\times}10mm$ fr slave. After the optimization process, it is expected to be commercialized as a wristwatch for anti-lost device.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.4
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• pp.659-665
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• 2017

Power semiconductor devices required the low on-resistance and high breakdown voltage. Wide band-gap materials opened a new technology of the power devices which promised a thin drift layer at an identical breakdown voltage. The diamond had the wide band-gap of 5.5 eV which induced the low power loss, high breakdown capability, low intrinsic carrier generation, and high operation temperature. We investigated the p-type pseudo-vertical diamond Schottky barrier diodes using a numerical simulation. The impact ionization rate was material to calculating the breakdown voltage. We revised the impact ionization rate of the diamond for adjusting the parallel-plane breakdown field at 10 MV/cm. Effects of the field plate on the breakdown voltage was also analyzed. A conventional diamond Schottky barrier diode without field plate exhibited the high forward current of 0.52 A/mm and low on-resistance of $1.71{\Omega}-mm$ at the forward voltage of 2 V. The simulated breakdown field of the conventional device was 13.3 MV/cm. The breakdown voltage of the conventional device and proposed devices with the $SiO_2$ passivation layer, anode field plate (AFP), and cathode field plate (CFP) was 680, 810, 810, and 1020 V, respectively. The AFP cannot alleviate the concentration of the electric field at the cathode edge. The CFP increased the breakdown voltage with evidences of the electric field and potential. However, we should consider the dielectric breakdown because the ideal breakdown field of the diamond is higher than that of the $SiO_2$, which is widely used as the passivation layer. The real breakdown voltage of the device with CFP decreased from 1020 to 565 V due to the dielectric breakdown.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2008.11a
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• pp.368-371
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• 2008

Cellulose based Electroactive Paper (EAPap) has been developed as a new smart material due to its advantages of piezoelectricity, large displacement, low power consumption, low cost and flexibility. EAPap can be used fur a surface acoustic wave (SAW) device using the piezoelectric property of EAPap, resulting in the cost effective and flexible SAW device. In this paper, inter digit transducer (IDT) structure using lift-off technique with a finger gap of $10{\mu}m$ was used for micro fabrication of the cellulose EAPap SAW devices. The performance of IDT patterned SAW device was characterized by a Network Analyzer. The feasibility of cellulose EAPap as a potential acoustic device was presented and explained.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.18 no.11
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• pp.1128-1133
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• 2008

Cellulose based electroactive paper(EAPap) has been developed as a new smart material due to its advantages of piezoelectricity, large displacement, low power consumption, low cost and flexibility. EAPap can be used for a surface acoustic wave (SAW) device using the piezoelectric property of EAPap, resulting in the cost effective and flexible SAW device. In this paper, inter digit transducer(IDT) structure using lift-off technique with a finger gap of 10mm was used for micro fabrication of the cellulose EAPap SAW devices. The performance of IDT patterned SAW device was characterized by a Network Analyzer. The feasibility of cellulose EAPap as a potential acoustic device was presented and explained.

• The KSFM Journal of Fluid Machinery
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• v.18 no.1
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• pp.29-36
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• 2015

Recently, Stirling engines are emerging as a key device for power conversion of renewable energy or waste energy. This study develops a LTDSE(Low Temperature Differential Stirling Engine) using a water spray for higher heat transfer and performs load performance tests for various flow rates and temperatures of hot water spray for variable engine loads emulated by a mechanical friction device. Internal temperature and pressure, working frequency and inlet and outlet temperature of the supply water are measured. As a result, the increases in flow rate and temperature of hot water respectively enhance the power output, efficiency and the working frequency, while the increasing engine load leads to decreases in working frequency but increases in the pressure amplitude. Eventually, it is revealed there exists a maximum shaft power of the test engine.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.53 no.9
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• pp.657-662
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• 2004

The low-power design of the digital hearing aid is indispensable to achieve the compact portable device with long battery duration. In this paper, new low-power adaptive filter structure is proposed based on distributed arithmetic(DA). By modifying the DA technique, the proposed decimation filter structure can significantly reduce the power consumption and implementation area. Through Verilog-HDL coding, cell occupation of the proposed structure is reduced to 33.49% in comparison with that of the conventional multiplier structure. Since Verilog-HDL simulation processing time of the two structures are same, it is assumed that the power consumption or implementation area is proportional to the cell occupation in the simulation.

• Proceedings of the KSR Conference
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• 2005.11a
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• pp.699-704
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• 2005

In the station of the railway and the subway various illumination equipment and a general power equipment for a passenger convenience, the signal equipment and the communication equipment which is necessary to the train operation provided. At the all of like this equipment from the electric room which is established in each station by changing from high voltage to low voltage and it supplies from the illumination transformer, the power transformer and the signal transformer. If it supplies to the equipment from the high voltage to the low voltage, it must be established to contact protection device in between the high voltage coil and the low voltage coil. Also it must do the grounding faulting device at the low voltage lines, the earthing devices at apparatus for the protection of an electric shock and an electric fire by the electric relation law. Compared the related regulations between the facilities which require protective functions such as grounding fault or earthing in public utilities like subway stations, and the facilities which do not require line earthing or protective functions such as electricity supplied for signalling the train. Also, will describe a countermeasure for the accident from a grounding fault.

• Korean Journal of Materials Research
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• v.8 no.11
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• pp.977-981
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• 1998

Controlling the wafer temperatures from 200 to$500^{\circ}C$, low resistive tungsten thin films used for VLSI metallization are deposited by PECVD method. Resistivities of plasma deposited tungsten thin films are very sensitive to the $H_2/WF_6 $ partial pressure ratios. Residual stress behaviors of the films as a function of plasma power density were also studied. At the power density under the $0.7W/\textrm{cm}^2$, residual stress of W film is about $2.4\times10^9dyne/\textrm{cm}^2$. When the power density is. however, increased from 1.8 to $2.7W/\textrm{cm}^2$, residual stress is suddenly increased from $8.1\times10^9$ to $1.24\times10^{10}dyne/\textrm{cm}^2$ ue to the ion or radical bombardment at high power density.

• New & Renewable Energy
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• v.5 no.3
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• pp.22-25
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• 2009

For increasing the output voltage, six SMD(surface mount device) type AlGaAs/GaAs solar cells were connected in series. The electrical properties of the array were measured and compared with one sun (100 mW/$cm^2$) and indoor light (480 lux) conditions. Under one sun condition, output power was 21.57 mW and it was $14.67\;{\mu}W$ under indoor light condition. Under the indoor light condition, the intensity of the light is very low compared to one sun condition. Thus the Voc(open circuit voltage) and Isc (short circuit current) of the sample under indoor light condition decreased very much compared to that of under the one sun condition. This kind of solar cell power supply can be used as a power source for ubiquitous sensor network (USN).