• 정보처리학회논문지A
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• 제17A권3호
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• pp.121-126
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• 2010

본 논문에서는 저 전압 스윙 기술을 적용하여 저 전력 회로를 구현하고, 슬립 트랜지스터 (sleep-transistor)를 이용하여 누설전류를 최소화하는 새로운 저 전력 MOS 전류모드 논리회로 (MOS current-mode logic circuit)를 제안하였다. 제안한 회로는 저 전압 스윙 기술을 적용하여 저 전력 특성을 갖도록 설계하였고 고 문턱전압 PMOS 트랜지스터 (high-threshold voltage PMOS transistor)를 슬립 트랜지스터로 사용하여 누설전류를 최소화하였다. 제안한 회로는 $16\;{\times}\;16$ 비트 병렬 곱셈기에 적용하여 타당성을 입증하였다. 이 회로는 슬립모드에서 기존 MOS 전류 모드 논리회로 구조에 비해 대기전력소모가 1/104로 감소하였으며, 정상 동작모드에서 11.7 %의 전력소모 감소효과가 있었으며 전력소모와 지연시간의 곱에서 15.1 %의 성능향상이 있었다. 이 회로는 삼성 $0.18\;{\mu}m$ CMOS 공정을 이용하여 설계하였으며, HSPICE를 통하여 검증하였다.

• ETRI Journal
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• 제31권2호
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• pp.243-245
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• 2009

A novel ultra-low-power readout circuit for a pH-sensitive ion-sensitive field-effect transistor (ISFET) is proposed. It uses an ISFET/reference FET (REFET) differential pair operating in weak-inversion and a simple current-mode metal-oxide semiconductor FET (MOSFET) translinear circuit. Simulation results verify that the circuit operates with excellent common-mode rejection ability and good linearity for a single pH range from 4 to 10, while only 4 nA is drawn from a single 1 V supply voltage.

• ETRI Journal
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• 제19권2호
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• pp.35-47
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• 1997

A power amplifier operating at 3.3 V has been developed for CDMA/AMPS dual-mode cellular phones. It consists of linear GaAs power MESFET's, a new gate bias control circuit, and an output matching circuit which prevents the drain terminal of the second MESF from generating the harmonics. The relationship between the intermodulation distortion and the spectral regrowth of the power amplifier has been investigated with gate bias by using the two-tone test method and the adjacent channel leakage power ratio (ACPR) method of CDMA signals. The dissipation power of the power amplifier with a gate bias control circuit is minimized to below 1000 mW in the range of the low power levels while satisfying the ACPR of less than -26 dBc for CDMA mode. The ACPR of the power amplifier is measured to be -33 dBc at a high output power of 26 dBm.

• 전자공학회지
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• 제25권5호
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• pp.31-41
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• 1998

With the advent of portable electronic systems, power consumption has recently become a major issue in circuit and system design. Furthermore, the sophisticated fabrication technology makes it possible to embed more functions and features in a VLSI chip, consequently calling for both higher performance and lower power to deal with the ever growing complexity of system algorithms than in the past. VLSI designers should cope with two conflicting constraints, high performance and low power, offering an optimum trade off of these constraints to meet requirements of system. Historically, VLSI designers have focused on performance improvement, and power dissipation was not a design criteria but an afterthought. This design paradigm should be changed, as power is emerging as the most critical design constraint. In VLSI design, low power design can be accomplished through many ways, for instance, process, circuit/logic design, architectural design, and etc.. In this paper, a few low power design examples, which have been used in 8 bit micro-controller core, and can be used also in 4/16/32 bit micro-controller cores, are presented in the areas of circuit, logic and architectural design. We first propose a low power guidelines for micro-controller design in SAMSUNG, and more detailed design examples are followed applying 4 specific design guidelines. The 1st example shows the power reduction through reduction of number of state clocks per instruction. The 2nd example realized the power reduction by applying RISC(Reduced Instruction Set Computer) concept. The 3rd example is to optimize the algorithm for ALU(Arithmetic Logic Unit) to lower the power consumption, Lastly, circuit cells designed for low power are described.

• 전기전자학회논문지
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• 제12권4호
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• pp.211-216
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• 2008

이 논문은 MOS 전류모드 논리 (MOS current-mode logic circuit, MCML) 회로를 이용하여 저 전력 특성을 갖는 8${\times}$8 비트 병렬 곱셈기를 설계하였다. 설계한 곱셈기는 회로가 동작 하지 않을 때의 정적 전류의 소모를 최소화하기 위하여 슬립 트랜지스터 (sleep-transistor)를 이용하여 저 전력 MOS 전류모드 논리회로를 구현하였다. 설계한 곱셈기는 기존 MOS 전류모드 논리회로에 비해 대기전력소모가 1/50으로 감소하였다. 또한, 이 회로는 기존 MOS 전류모드 논리회로에 비해 전력소모에서 10.5% 감소하였으며, 전력소모와 지연시간의 곱에서 11.6%의 성능 향상이 있었다. 이 회로는 삼성 0.35${\mu}m$ 표준 CMOS 공정을 이용하여 설계하였으며, HSPICE를 통하여 검증하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 F
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• pp.2072-2074
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• 1997

A new low-cost high power factor correction circuit for electronic ballasts is proposed. The proposed circuit provides good power factor correction, low current harmonic distortion and cost-effectiveness. The prototype meets the IEC555-2 requirements satisfactorily with nearly unity power factor.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.919-922
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• 2003

This paper presents a novel low power driving circuit for passive matrix organic lighting emitting diodes (OLED) displays. The proposed driving method for a low power OLED driving circuit which reduce large parasitic capacitance in OLED panel only use current driving method, instead of mixed mode driving method which uses voltage pre-charge technique. The driving circuit is implemented to one chip using 0.35${\mu}{\textrm}{m}$ CMOS process with 18V high voltage devices and it is applicable to 96(R.G.B)X64, 65K color OLED displays for mobile phone application. The maximum switching power dissipation of driving power dissipation is 5.7mW and it is 4% of that of the conventional driving circuit.

• Journal of Power Electronics
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• 제6권3호
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• pp.253-263
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• 2006

A high performance and low cost single switch current fed energy recovery circuit (ERC) for an alternating current (AC) plasma display panel (PDP) is proposed. Since it is composed of only one power switch compared with the conventional circuit consisting of four power switches and two large energy recovery capacitors, the ERC features a simpler structure and lower cost. Furthermore, since all power switches can be switched under soft switching operating conditions, the proposed circuit has desirable merits such as increased reliability and low switching loss. Specifically, there are no serious voltage notches across the PDP with the aid of gas discharge current compensation, which can greatly reduce the current stress of all inverter switches, and provide those switches with the turn on timing margin. To confirm the validity of proposed circuit, its operation and performance were verified on a prototype for 7-inch test PDP.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제50권10호
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• pp.501-507
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• 2001

In this paper, new high-efficiency zero voltage switching (ZVS) AC-DC boost converter is proposed to achieve power factor correction by simplifing energy recovery circuit. A lot of high power factor correction circuits have been proposed and applied to increase input power factor and efficiency. Most of these circuits may obtain unity power factor and achieve sinusoidal current waveform with zero voltage or/and zero current switching. However, it is difficult for them to obtain low cost, small size, low weight, and low noise. The topology proposed to improve these problems can compact the devices in circuit and can achieve high efficiency ZVS AC-DC boost converter. Simulation and experimental results show that this topology is capable of obtaining high power factor and increasing the efficiency of the system.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.1139-1140
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• 2008

This paper is designated to introduce the method of reducing stand-by Power of SMPS applied PLC(Power Line Communication) and its implementation. PLC modem consists mainly of PLC Module, Coupling Circuit, ZCP(Zero-Cross Point) Circuit and Power Supply Circuit. By controlling power from Power Supply Circuit to PLC Module and ZCP Circuit, the reduction of Stand-by Power is established. When this method is applied to SMPS used for a low-speed PLC, about 50% power reduction is provided, compared to the other case to which it is not applied.