• Title/Summary/Keyword: low leakage

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A Low Distortion and Low Dissipation Power Amplifier with Gate Bias Control Circuit for Digital/Analog Dual-Mode Cellular Phones

  • Maeng, Sung-Jae;Lee, Chang-Seok;Youn, Kwang-Jun;Kim, Hae-Cheon;Mun, Jae-Kyung;Lee, Jae-Jin;Pyun, Kwang-Eui
    • ETRI Journal
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    • v.19 no.2
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    • pp.35-47
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    • 1997
  • A power amplifier operating at 3.3 V has been developed for CDMA/AMPS dual-mode cellular phones. It consists of linear GaAs power MESFET's, a new gate bias control circuit, and an output matching circuit which prevents the drain terminal of the second MESF from generating the harmonics. The relationship between the intermodulation distortion and the spectral regrowth of the power amplifier has been investigated with gate bias by using the two-tone test method and the adjacent channel leakage power ratio (ACPR) method of CDMA signals. The dissipation power of the power amplifier with a gate bias control circuit is minimized to below 1000 mW in the range of the low power levels while satisfying the ACPR of less than -26 dBc for CDMA mode. The ACPR of the power amplifier is measured to be -33 dBc at a high output power of 26 dBm.

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Dielectric property and conduction mechanism of ultrathin zirconium oxide films

  • Chang, J.P.;Lin, Y.S.
    • Electrical & Electronic Materials
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    • v.16 no.9
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    • pp.61.1-61
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    • 2003
  • Stoichiometric, uniform, amorphous ZrO$_2$ films with an equivalent oxide thickness of ∼1.5nm and a dielectric constant of ∼18 were deposited by an atomic layer controlled deposition process on silicon for potential application in meta-oxide-semiconductor(MOS) devices. The conduction mechanism is identified as Schottky emission at low electric fields and as Poole-Frenkel emission at high electric fields. the MOS devices showed low leakage current, small hysteresis(〈50mV), and low interface state density(∼2*10e11/cm2eV). Microdiffraction and high-resolution transmission electron microscopy showed a localized monoclinic phase of ${\alpha}$-ZrO$_2$ and an amorphous interfacial ZrSi$\_$x/O$\_$y/ layer which has a correspondign dielectric constant of 11

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Performance Characteristic Analysis for Open Channel Type Regenerative Pump (개수로형 재생펌프의 특성해석에 관한 연구)

  • Shin, Dong-Yun;Choi, Chang-Ho;Kim, Jin-Han
    • The KSFM Journal of Fluid Machinery
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    • v.10 no.2 s.41
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    • pp.46-53
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    • 2007
  • An improved performance characteristics analysis model of a regenerative pump is proposed in the present paper. For its low characteristic speed, a regenerative pump generates high head with low flow rate. However, the efficiency is fairly low due to the skin friction between impeller and casing. Also, the complexity of its internal flow pattern makes prediction of performance characteristics difficult. In the present research, a one-dimensional analysis model was improved with consideration of disc friction loss, minor loss, and modified flow length, and the result was proven to be close in range with the results from experiments.

A Study on Grooving Corrosion at the Weld of a Low Carbon Steel Pipe Made by Electrical Resistance Welding (탄소강관의 ERW 용접부 홈부식 손상에 관한 연구)

  • Kim Yong;Lee Bo-Young
    • Journal of Welding and Joining
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    • v.22 no.5
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    • pp.58-64
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    • 2004
  • Although leakage at a low carbon steel pipe made by electrical resistance welding (ERW) was reported due to grooving corrosion, the cause for the corrosion has not yet been cleared. In order to clarify the main cause, failure analysis on the leaked pipe was carried out, followed by metallographic investigation and corrosion test for the various ERW pipe made with different welding heat input. The microstructure, particularly inclusion content, of the weldment is dependant on the welding heat input applied. For an improper low heat input, the amount of inclusion at the weld was high. High inclusion content accelerated grooving corrosion at the weld. It is therefore that welding heat input should be controlled based on the carbon content of the pipe in order to improve the corrosion resistance of the ERW pipe.

Electrical Applications of OTFTs

  • Kim, Seong-Hyun;Koo, Jae-Bon;Lim, Sang-Chul;Ku, Chan-Hoi;Lee, Jung-Hun;Zyung, Tae-Hyoung
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.170-170
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    • 2006
  • [ ${\pi}-conjugated$ ] organic and polymeric semiconductors are receiving considerable attention because of their suitability as an active layer for electronic devices. An organic inverter with a full swing and a high gain can be obtained through the good qualities of the transfer characteristics of organic thin-film transistors (OTFTs); for example, a low leakage current, a threshold voltage ($V_{th}$) close to 0 V, and a low sub-threshold swing. One of the most critical problems with traditional organic inverters is the high operating voltage, which is often greater than 20 V. The high operating voltage may result in not only high power consumption but also device instabilities such as hysteresis and a shift of $V_{th}$ during operation. In this paper, low-voltage and little-hysteresis pentacene OTFTs and inverters in conjunction with PEALD $Al_{2}O_{3}\;and\;ZrO_{2}$ as the gate dielectrics are demonstrated and the relationships between the transfer characteristics of OTFT and the voltage transfer characteristics (VTCs) of inverter are investigated.

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Low-operating voltage Pentacene FETs with High dielectric constant polymeric gate dielectrics and its hyteresis behavior

  • Park, Chan-Eon
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.168-168
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    • 2006
  • Low-operating voltage organic field-effect transistors (OFETs) have been realized with high dielectric constant (${\kappa}$) polymer such as cyanoethylated poly vinyl alcohol (CR-V, ${\kappa}=12$). Since the $high-{\kappa}$polymers are likely to contain water and ionic impurities, large hysteresis and considerable leakage current are frequently observed in OFETs. To solve these problems, we cross-linked the CR-V by using a cross-linking agent. Cross-linked CR-V dielectrics showed high dielectric constant of 11.1 and good insulating properties, resulting in a high capacitance ($81nF/cm^{2}$ at 1MHz) at 120 nm of dielectric thickness. Pentacene FETs with cross-linked CR-V dielectrics exhibited high carrier mobility ($0.72\;cm^{2}/Vs$), small subthreshold swing (185 mV/dec) and little hysteresis at low-operating voltage (${\Leq}-3V$).

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Performance Analysis on the Variable Speed Scroll Compressor with Operating Conditions (가변속 스크롤 압축기의 운전조건의 변화에 따른 성능 해석)

  • 박홍희;박윤철;김용찬
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.12 no.7
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    • pp.649-658
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    • 2000
  • Thermodynamic modeling of low-pressure scroll compressor was developed by combining continuity and energy conservation equation. Suction gas heating was considered using energy balance inside the low pressure shell. Pressure, temperature and mass of refrigerant-22 as a function of orbiting angle were calculated by solving the governing equations using fourth order Rung-Kutta scheme. Motor efficiency was taken by experiments with a variation of frequency. The developed model was applied to the analysis of an inverter driven scroll compressor with a variation of frequency, pressure ratio and operating conditions. The model was verified with the experimental results at the same operating conditions. The developed model was adequate to predict performance of the inverter driven scroll compressor as a function of operating conditions. Calculated parameters from the model were discharge temperature, mass flow rate, power input, COP, and thermodynamic properties with respect to orbiting angle. To enhance the performance of a scroll compressor, it is essential to diminish leakage at low frequency level and improve the mechanical efficiency at high frequency level.

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Fabrication of Low Voltage ZnO Varistor by Seed Grain Method (종자 입정을 이용한 저전압용 ZnO 바리스터의 제조)

  • 강을손;성건용;김종희
    • Journal of the Korean Ceramic Society
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    • v.27 no.4
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    • pp.473-480
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    • 1990
  • Low-voltage ZnO-based varistors were made by seed grain method at various sintering conditions. Their microstructure and electrical properties were investigated and comlpared with those of the ZnO varistors made by a conventional method at the same sintering condition. During the sintering process, the added seed ZnO grain rapidly grew to be a gaint grain(above 500$\mu\textrm{m}$) provinding easy current path. Therefore the breakdown voltage was lowered as much as the order of 1/10-1/5 in comparison to that of the varistor made by a conventional method. But the grain size of the giant ZnO was little influenced by sintering condition, so the breakdown voltate was also little influenced. The weight loss was decreased by the addition of the seed grain, because the giant grain decreased the evaporation area. Therefore the nonobmic property of the specimen made by seed grain method was little influencedby sintering condition. In this research the low-voltage varistor made by seed grain method showed the least leakage current when sintered at 1150$^{\circ}C$ for zero hour.

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Clinical Experience of Carbomedics Valve (CarboMedies 기계판막의 임상적 연구)

  • 김병열
    • Journal of Chest Surgery
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    • v.27 no.12
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    • pp.995-1001
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    • 1994
  • The CarboMedics valve prosthesis is a relatively new. low profile bileaflet prosthesis. During a 6 year period from Aug. 1988 to July 1994. 158 patients had CarboMedics prostheses implanted in the mitral [n=94], aortic [n=25], or aortic and mitral [n=39] in National Medical Center. Hospital mortality was 9.4% and the main cause of death was low output syndrome. Follow up was 96% complete, with 365.4 patient-years and a mean follow up of 30 months [ range 1 to 72 months ] . The overall actuarial 6 year survival rate was 91.61 3.47% and actuarial 6year freedom from all valve related complications was 73.9 7.67%. The linearized incidence of vavle related complications was as follows: thromboembolism 1.37%/patient-year ; valve thrombosis 0.82%/ patient-year ; anticoagulant related hemorrhage 0.85%/patient-year ; perivalvular leakage 0.55%/paitent-year: prosthetic valve endocarditis 0.82%/patient-year ; reoperation 1.37%/patient-year. There were no instances of structural failure. We conclude that the Carbomedics valve has a low rate of complications that further improves the quality of life in patients with heart valve prostheses.

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The Development of Low-noise EEG Preamplifier (저잡음 뇌파 전치 증폭기의 개발)

  • Yoo, S.K.;Kim, N.H.;Kim, S.H.;Song, J.S.;Ahn, C.B.
    • Proceedings of the KOSOMBE Conference
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    • v.1995 no.05
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    • pp.68-70
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    • 1995
  • A low-noise pre-amplifier is developed for use in Topographic Brain Mapping system. It consists of signal generator, signal amplifier with a impedance converter, shield driver, body driver, differential amplifier, and isolation amplifier. Pre-amplifier circuit is designed with the concept of isolation and active body and shield driver. This amplifier shows the good noise behavior, high CMRR, high input impedance, low leakage current and high IMRR.

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