• Corrosion Science and Technology
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• 제7권6호
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• pp.319-323
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• 2008

The polarization resistance of mild steel in 0.5M hydrochloric acid has been evaluated by using impedance (Z) and linear polarization (LPR) techniques and compared to the noise resistance obtained from electrochemical noise data. The degree of localization of this general corrosion has also been discussed by evaluating localization index and power spectral density. Polarization resistance obtained by LPR technique ($28\Omega$) was higher than that obtained by impedance technique ($15\Omega$). Noise resistance ($11\Omega$) was much lower than polarization resistance measured by both of above techniques. Higher polarization resistance obtained by LPR technique is generally caused by passivation effect in the presence of scales or deposits which can introduce an increased resistance as can low conductivity electrolytes. The reason why noise resistance is lower than polarization resistance is the effect of background noise detected by using three platinum electrodes cell in 0.5M hydrochloric acid. Slope($-\beta$) of power spectral density (PSD) obtained from analysis of noise data ($-\beta$ = 3.3) was much higher than 2 which indicates mild steel corroded uniformly. Localization index (LI) calculated from statistical analysis (LI=0.08) is much lower than 1 which indicates that mild steel did not corroded locally. However, LI value is still higher than $1x10^{-3}$ and this indicates that mild steel corroded locally in microscopic point of view.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.251-252
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• 2012

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low Water Vapor Transition Rate (WVTR) of $1{\times}10^{-6}g/m^2$/day. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2$/day) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study, we developed an $Al_2O_3$ nano-crystal structure single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS system is based on the conventional RF magnetron sputtering and neutral beam source. The neutral beam source consists of an electron cyclotron Resonance (ECR) plasma source and metal reflector. The Ar+ ions in the ECR plasma are accelerated in the plasma sheath between the plasma and reflector, which are then neutralized by Auger neutralization. The neutral beam energies were possible to estimate indirectly through previous experiments and binary collision model. The accelerating potential is the sum of the plasma potential and reflector bias. In previous experiments, while adjusting the reflector bias, changes in the plasma density and the plasma potential were not observed. The neutral beam energy is controlled by the metal reflector bias. The NBAS process can continuously change crystalline structures from an amorphous phase to nano-crystal phase of various grain sizes within a single inorganic thin film. These NBAS process effects can lead to the formation of a nano-crystal structure barrier layer which effectively limits gas diffusion through the pathways between grain boundaries. Our results verify the nano-crystal structure of the NBAS processed $Al_2O_3$ single gas barrier layer through dielectric constant measurement, break down field measurement, and TEM analysis. Finally, the WVTR of $Al_2O_3$ nano-crystal structure single gas barrier layer was measured to be under $5{\times}10^{-6}g/m^2$/day therefore we can confirm that NBAS processed $Al_2O_3$ nano-crystal structure single gas barrier layer is suitable for OLED application.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• 대한전자공학회논문지SD
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• 제38권10호
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• pp.671-677
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• 2001

사파이어 기판 위에 성장된 GaN위에 RUO₂/GaN 쇼트키형 자외선 수광소자를 설계, 제작하였다. 자외선 빛의 흡수율을 높이기 위해, MOCVD 다층구조는 undoped GaN(0.5 ㎛)in￣-GaN(0.1 ㎛)/n＋-GaN(1.5 ㎛)로 성장하였다. 성장층은 3.8×10/sup 18/ cm￣³의 캐리어 농도와 283 ㎠/V· s의 이동도를 가진다. 500 ㎛내외의 직경을 가지는 메사구조를 형성하기 위해 ECR 식각한 후, n＋-GaN층위에 Al으로 저항성 접촉을 하였다. 저항성 및 쇼트키 접촉 사이에 Si₃/N₄ 박막으로 절연한 이후 undoped GaN 층위에 RuO₂ 쇼트키 접촉을 하였다. 제작된 쇼트키 다이오드는 1.15×10/sup -5/ ［Ω-㎠］의 접촉비저항을 가졌다. 제작된 다이오드는 역전압인 -5V에서 305pA의 낮은 누설전류를 확인하였는데, 이 값은 RuO₂ 쇼트키 금속증착에 의해 현저히 향상된 것이다. 광측정에서는 10/sup 5/의 자외선대가시광선 제거비와 365nm 파장에서 0.23A/W로 높은 응답도를 보인다.

• 공업화학
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• 제25권5호
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• pp.447-454
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• 2014

유기태양전지는 제조비용이 저렴하고 플렉서블 전자소자에 적용이 가능하다는 장점들로 인해 최근 많은 연구가 진행되고 있다. 일반적인 정구조의 태양전지(conventional structured solar cell)의 경우 10%대의 향상된 발전 효율을 보이고 있으나, 여전히 기타 Si 및 CIGS 등과 같은 태양전지에 비해 낮은 효율과 짧은 수명은 상용화의 걸림돌로 작용하고 있다. 일반적으로 유기태양전지의 짧은 수명은 유기물의 광산화뿐만 아니라 수분 및 산소에 의한 음극, 양극 소재의 부식으로 인한 소재/소자 열화 문제로 설명되어지고 있다. 한편 이와 같은 문제점을 해결하기 위해 새로운 소자 구조(역구조 태양 전지; Inverted structured solar cell)가 제안되었으며 전자 수송층 및 기능성 계면 소재 연구를 통한 발전 효율 및 수명 향상에 관한 연구가 꾸준히 되고 있다. 그 결과 최근 2D/3D 산화 아연(ZnO) 소재를 역구조 태양전지의 전자 수송층으로 적용하고 건,습식 표면 후처리를 통해 약 9% 수준의 발전효율을 달성하였다. 본 총설에서는 ZnO를 기반으로 하는 전자 수송층 소재의 연구 동향 및 역구조 태양전지의 효율 향상 기술에 관한 최신 연구 동향을 소개하고자 한다.