• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2511-2513
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• 2007

• Transactions on Electrical and Electronic Materials
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• v.6 no.5
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• pp.229-232
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• 2005

Direct characterization of band alignment at chemical bath deposition $(CBD)-CdS/Cu_{0.93}(In_{1-x}Ga_x)Se_2$ has been carried out by photoemission spectroscopy (PES) and inverse photoemission spectroscopy (IPES). Ar ion beam etching at the condition of the low ion kinetic energy of 400 eV yields a removal of surface contamination as well as successful development of intrinsic feature of each layer and the interfaces. Especially interior regions of the wide gap CIGS layers with a band gap of $1.4\~1.6\;eV$ were successfully exposed. IPES spectra revealed that conduction band offset (CBO) at the interface region over the wide gap CIGS of x = 0.60 and 0.75 was negative, where the conduction band minimum of CdS was lower than that of CIGS. It was also observed that an energy spacing between conduction band minimum (CBM) of CdS layer and valance band maximum (VBM) of $Cu_{0.93}(In_{0.25}Ga_{0.75})Se_2$ layer at interface region was no wider than that of the interface over the $Cu_{0.93}(In_{0.60}Ga_{0.40})Se_2$ layer.

• Korean Journal of Materials Research
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• v.4 no.2
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• pp.227-232
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• 1994

Diamondlike carbon thin film has been fabricated with low discharging frequency, 450KHz by plasma enhanced chemical vapor deposition. Its physical properties such as optical band gap, microhardness and internal stress have been compared with 13.56MHz film. Optical band gap of 450KHz DLC thin film was less than 13.56MHz film and it was found that C-H bond concentration and total hydrogen contents in the film decreased greatly as the result of FT-IR and CHN analysis. Also, when DLC thin film was fabricated with low discharging frequency, it was expected that the adhesion of the film to the substrate was improved by the great decrease of internal stress without any considerable decrease of microhardness.

• Electrical & Electronic Materials
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• v.7 no.6
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• pp.490-495
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• 1994

We investigated photoreflectance of semi-insulating GaAs with respect to modulation sources, that is, modulation beam intensity, modulation frequency, temperature, and thickness of sample. PR spectra by each modulation source turned out to be signals of low electric field third differential, and band gap values of sample were fitted by least square root method for Aspnes' theoretical equation.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.320-320
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• 2014

Amorphous silicon alloy (a-Si) solar cells and modules have been receiving a great deal of attention as a low-cost alternate energy source for large-scale terrestrial applications. Key to the achievement of high-efficiency solar cells using the multi-junction approach is the development of high quality, low band-gap materials which can capture the low-energy photons of the solar spectrum. Several cell designs have been reported in the past where grading or buffer layers have been incorporated at the junction interface to reduce carrier recombination near the junction. We have investigated profiling the composition of the a-SiGe alloy throughout the bulk of the intrinsic material so as to have a built-in electrical field in a substantial portion of the intrinsic material. As a result, the band gap mismatch between a-Si:H and $a-Si_{1-x}Ge_x:H$ creates a barrier for carrier transport. Previous reports have proposed a graded band gap structure in the absorber layer not only effectively increases the short wavelength absorption near the p/i interface, but also enhances the hole transport near the i-n interface. Here, we modulated the GeH4 flow rate to control the band gap to be graded from 1.75 eV (a-Si:H) to 1.55 eV ($a-Si_{1-x}Ge_x:H$). The band structure in the absorber layer thus became like a U-shape in which the lowest band gap was located in the middle of the i-layer. Incorporation of this structure in the middle and top cell of the triple-cell configuration is expected to increase the conversion efficiency further.

• Journal of Power Electronics
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• v.18 no.4
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• pp.985-996
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• 2018

The implementation and performance evaluation of an interleaved boundary conduction mode (BCM) boost power factor correction (PFC) converter is presented in this paper by employing three wide band-gap switching devices: a super junction silicon (Si) MOSFET, a silicon carbide (SiC) MOSFET and a gallium nitride (GaN) high electron mobility transistor (HEMT). The practical considerations for adopting wide band-gap switching devices to BCM boost PFC converters are also addressed. These considerations include the gate drive circuit design and the PCB layout technique for the reliable and efficient operation of a GaN HEMT. In this paper it will be shown that the GaN HEMT exhibits the superior switching characteristics and pronounces its merits at high-frequency operations. The efficiency improvement with the GaN HEMT and its application potentials for high power density/low profile BCM boost PFC converters are demonstrated.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.72.1-72.1
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• 2010

Thin film a-Si solar cells deposited by PECVD have many advantages compared to the traditional crystalline Si solar cells. They do not require expensive Si wafer, the process temperature is relatively low, possibility of scaling up for mass production, etc. In order to produce thin film solar cells, understanding the relationship between the material characteristics and deposition conditions is important. It has been reported by many groups that the band gap of the a-Si material and the deposition rate has an linear relationship, when RF power is used to control both. However, when the process pressure is changed in order to control the deposition rate and the band gap, a diversion from the well known linear relationship occurs. Here, we explain this diversion by the deposition condition crossing different plasma regions in the Paschen curve with a simple model. This model will become a guide to which condition a-Si thin films must be fabricated in order to get a high quality film.

• Journal of information and communication convergence engineering
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• v.16 no.3
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• pp.197-202
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• 2018

This paper reveals the impact of the insertion of electromagnetic band gap (EBG) structures on the performance of circularly polarized (CP) patch-slot antenna with offset slot. Several optimizations are necessary to precise physical parameters in the aim to fix the resonance frequency at 3.2 GHz. The proposed antenna possesses lightweight, simplicity, low cost, and circular polarization ensured by two feeding sources to permit right-hand and left-hand circular polarization process (RHCP and LHCP). The measured results compared with simulation results of the proposed circularly polarized EBG antenna with offset slot show good band operations with –10 dB impedance bandwidths of 9.1% and 36.2% centered at 3.2 GHz, which cover weather radar, surface ship radar, and some communications satellites bands. Our investigation will confirm the simulation and experimental results of the EBG antenna involving new EBG structures.

• Journal of the Optical Society of Korea
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• v.6 no.3
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• pp.59-71
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• 2002

Photonic band gap structures have a high potential for nearly zero-threshold lasers. This paper describes new-types of low-threshold photonic crystal lasers fabricated in InGaAsP slab waveguides free-standing in air. Two-types of photonic crystal lasers are studied. One is a single-cell nano-cavity laser formed in a square array of air holes. This photonic band gap laser operates in the smallest possible whispering gallery mode with a theoretical Q >30000 and exhibits low threshold pump power of 0.8 mW at room temperature. The nther laser does not have any cavity structure and the lasing operation originates from the enhanced optical density of states near photonic band edges. A very low threshold of 35 $\mu$W (incident pump power) is achieved from this laser at 80 K, one of the lowest values ever reported. This low threshold is benefited from low optical losses as well as enhanced material gain at low temperature.

• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.117-123
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• 2015

Cholesteric liquid crystals are one dimensional photonic band-gap materials due to their birefringence and periodic structure. Dye doped cholesteric liquid crystals are self-assembling, mirror-less, low threshold laser structures that exhibit distributed feedback. In this review paper, we have presented the development in the field of lasing characteristics of dye doped cholesteric liquid crystals.