• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.122.1-122.1
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• 2015

The dependence of electronic properties and local structure of tantalum oxide thin film on oxygen deficiency have been investigated by means of X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results showed that the oxygen flow rate change results in the appearance of features in the Ta 4f at the binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV whose peaks are attributed to Ta1+, Ta2+, Ta3+, Ta4+, and Ta5+, respectively. The presence of nonstoichiometric state from tantalum oxide (TaOx) thin films could be generated by the oxygen vacancies. The REELS spectra suggested the decrease of band gap for tantalum oxide thin films with increasing oxygen deficiency. In addition, XAS spectra manifested both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the decrease of oxygen deficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.21-26
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• 1988

Composition with O-3 connectivity were fabricated from PZT and phenolic resin powders. These composites were investigated for dielectric and pizoelectric properties with PZT-polymer interface porosity variation. The interface porosity dependence of dielectric and piezoelectric properties was especially discussed by porosity factors. The interface porosity dependence of piezoelectric constant was larger than that of dielectric constant. It was considered that the interface pore plays the role of a stress buffer. Thus the local stress applied on PZT particles in the composite was remarkably diminish.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.397-397
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• 2013

The electrical, electronic, optical properties and the local structure of Nickel Oxide (NiO) thin film have been investigated by X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), UV-spectrometer,Hall Effect measurement and X-ray absorption spectroscopy (XAS). The XPS results show that the Ni 2p spectra for all films consist of $Ni2p_{3/2}$ at around 854.5 eV which indicate the presence of Ni-O bond from NiO phase and for the annealed film at temperature above $200^{\circ}C$ shows the coexist Ni oxide and Ni metal phase. The REELS spectra showed that the band gaps of the NiO thin films were abruptly decreased with increasing temperature. The values of the band gaps are consistent with the optical band gaps estimated by UV-Spectrometer. The optical transmittance spectra shows that the transparency of NiO thin films in the visible light region was deteriorated with higher temperature due to existence of $Ni^0$. Hall Effect measurement suggest that the NiO thin films prepared at relatively low temperatures (RT and $100^{\circ}C$) are suitable for fabricating p-type semiconductor which showed that the best properties was achieved at $100^{\circ}C$, such as a low resistivity of $7.49{\Omega}.cm$. It can be concluded that the annealing process plays a crucial role in converting from p type to n type semiconductor which leads to reducing electrical resistivity of NiO thin films. Furthermore, the extended X-ray absorption fine structure (EXAFS) spectrum at the Ni K-edge was used to address the local structure of NiO thin films. It was found that the thermal treatments increase the order in the vicinity of Ni atom and lead the NiO thin films to bunsenite crystal structure. Moreover, EXAFS spectra show in increasing of coordination number for the first Ni-O shell and the bond distance of Ni-O with the increase of substrate temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.193.1-193.1
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• 2014

This study was to investigate the electronic structure and optical properties of Na doped into NiO thin film using XPS and REELS. The films were grown by electron beam evaporation with varying the annealing temperature. The relationship between the electrical characteristics with the local structure of NiO thin films was also discussed. The x-ray photoelectron results showed that the Ni 2p spectra for all films consist of Ni 2p3/2 which indicate the presence of Ni-O bond from NiO phase and for the annealed film at temperature above $200^{\circ}C$ shows the coexist Ni oxide and Ni metal phase. The reflection electron energy loss spectroscopy spectra showed that the band gaps of the NiO thin films were slightly decreased with Na-doped into films. The Na-doped NiO showed relatively low resistivity compared to the undoped NiO thin films. In addition, the Na-doped NiO thin films deposited at room temperature showed the best properties, such as a p-type semiconducting with low electrical resistivity of $11.57{\Omega}.cm$ and high optical transmittance of ~80% in the visible light region. These results indicate that the Na doping followed by annealing process plays a crucial in enhancing the electrical and optical properties of NiO thin films. We believe that our results can be a good guide for those growing NiO thin films with the purpose of device applications, which require deposited at room temperature.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.3
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• pp.415-425
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• 1996

This study presents an analytical method of solving the behaviors of arc plasma in a nozzle constricting transferred-type torch and purposes to obtain the basic data for the design of a plasma torch, which can be obtained from the temperature, pressure, velocities and voltage distributions. We have to solve some conservation equations simultaneously and need to know the exact thermal gas properties in order to obtain the correct behaviors of arc plasma. It is also necessary to give the relevant physical or geometric boundary conditions. For the simplicity of analysis, we assumed that (a) the plasma flow is laminar, (b)the local thermodynamic equilibrium, i.e. LTE, prevails over the entire arc column region. The electrode sheath effects were neglected and the nozzle area was excluded from the analysis by assuming that the current flow into the nozzle is zero. We solved the momentum transfer equation including the self-magnetic pinch effect, and obtained the temperature distribution from the energy conservation equation. From this temperature, we could get arc voltage distribution. (author). refs., figs., tabs.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.4
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• pp.574-581
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• 1996

The neural network approach has been shown to be a general scheme for nonlinear dynamical system identification. Unfortunately the error surface of a Multilayer Neural Networks(MNN) that widely used is often highly complex. This is a disadvantage and potential traps may exist in the identification procedure. The objective of this paper is to identify a nonlinear dynamical systems based on Self-Organized Distributed Networks (SODN). The learning with the SODN is fast and precise. Such properties are caused from the local learning mechanism. Each local network learns only data in a subregion. This paper also discusses neural network as identifier of nonlinear dynamical systems. The structure of nonlinear system identification employs series-parallel model. The identification procedure is based on a discrete-time formulation. Through extensive simulation, SODN is shown to be effective for identification of nonlinear dynamical systems. (author). 13 refs., 7 figs., 2 tabs.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.169.2-169.2
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• 2015

$VO_2$ is a well-known a metal-to-insulator-transition (MIT) material, accompanied with a first order structural phase transition near room temperature. Because of the structural phase transition and the MIT occur near a same temperature, there is an ongoing argument whether the MIT is induced by the structural phase transition. $VO_2$ exhibits a relatively weak anti-oxidization ability and can be oxidized to higher-valence oxides (e.g., $V_4$ $O_7$ or $V_2$ $O_5$) when annealed at a high temperature in an oxygen-rich atmosphere. We fabricated $VO_2$ films on $Al_2$ $O_3$ (0001) substrates using a DC magnetron sputtering deposition process with carefully control the $O_2$ percentage in an atmosphere. X-ray diffraction measurements from the films showed only (0l0) peaks with no extra peaks, indicating b-oriented films. The temperature-dependent local structural properties of $VO_2$ films were investigated by using in-situ X-ray absorption fine structure (XAFS) measurements at the V K edge. XAFS revealed that the structural phase transition was occurred nearly $70^{\circ}C$ for heating process and reproducible. Resistance measurements as a function of temperature (R-T) demonstrated that the resistance of $VO_2$ films was changed by a factor of 4 near $75^{\circ}C$ which was higher than $68^{\circ}C$ reported from a $VO_2$ bulk. We will discuss the MIT of $VO_2$ films, comparing with the local structural properties determined by XAFS measurements.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.375-375
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• 2014

Layered semiconductor materials can be a promising candidate for large-area thin film transistors (TFTs) due to their relatively high mobility, low-power switching, mechanically flexibility, optically transparency, and amenability to a low-cost, large-area growth technique like thermal chemical vapor deposition (CVD). Unlike 2D graphene, series of transition metal dichalcogenides (TMDCs), $MX_2$ (M=Ta, Mo, W, X=S, Se, Te), have a finite bandgap (1~2 eV), which makes them highly attractive for electronics switching devices. Recently, 2D $MoS_2$ materials can be expected as next generation high-mobility thin-film transistors for OLED and LCD backplane. In this paper, we investigate in detail the electrical characteristics of 2D layered $MoS_2$ local bottom-gated transistor with the same device structure of the conventional thin film transistor, and expect the feasibility of display application.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.51 no.10
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• pp.468-476
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• 2002

Digital images are easily corrupted by noise during the data transmission, data capture and data processing. A technical method of noise analyzing and adaptive filtering for reducing of quantum noise in medical radio-fluoroscopy images is presented. By adjusting the characteristics of the filter according to local statistics around each pixel of the image as moving windowing, it is possible to suppress noise sufficiently while preserve edge and other significant information required in diagnosis. We proposed adaptive weighed median(AWM) filters based on local statistics. We showed two ways of realizing the AWM filters. One is a simple type of AWM filter, which is constructed by Homogeneous factor(HF). Homogeneous factor(HF) from the noise models that enables the filter to recognize the local structures of the image is introduced, and an algorithm for determining the HF fitted to the diagnostic systems with various inner statistical properties is proposed. We show by the experimented that the performances of proposed method is superior to these of other filters and models in preserving small details and suppressing the noise at homogeneous region. The proposed algorithms were implemented by Visual C++ language on a IBM-PC Pentium 550 for testing purposes and the effects and results of the filter in the various levels of noise and images were proposed by comparing the values of NMSE(normalized mean square error) with the value of the other existing filtering methods.

• Structural Engineering and Mechanics
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• v.23 no.1
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• pp.15-27
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• 2006

A locally varying temperature field or a mixture of two or more different materials can cause local variation of elasticity properties of a beam. In this paper, a new Euler-Bernoulli beam element with varying Young's modulus along its longitudinal axis is presented. The influence of axial forces according to the linearized 2nd order beam theory is considered, as well. The stiffness matrix of this element contains the transfer constants which depend on Young's modulus variation and on axial forces. Occurrence of the polynomial variation of Young's modulus has been assumed. Such approach can be also used for smooth local variation of Young's modulus. The critical loads of the straight slender columns were studied using the new beam element. The influence of position of the local Young's modulus variation and its type (such as linear, quadratic, etc.) on the critical load value and rate of convergence was investigated. The obtained results based on the new beam element were compared with ANSYS solutions, where the number of elements gradually increased. Our results show significant influence of the locally varying Young's modulus on the critical load value and the convergence rate.