• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1224-1226
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• 2003

In this work, we developed a high resolution printing technique based on transferring a pattern from a PDMS stamp to a Pd and Au substrate by microcontact printing Also, we fabricated various 2D metallic and polymeric nano patterns with the feature resolution of sub-micrometer scale by using the method of microcontact printing (${\mu}$CP) based on soft lithography. Silicon masters for the micro molding were made by e-beam lithography. Composite poly(dimethylsiloxane) (PDMS) molds were composed of a thin, hard layer supported by soft PDMS layer. From this work, it is certificated that composite PDMS mold and undercutting technique play an important role in the generation of a clear SAM nanopattern on Pd and Au substrate.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.199-202
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• 2003

Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. Since the resolution of nanostructures depends strongly upon that of nanostamps, the nanostamp fabrication technology is a key technology to UV-NIL. In this paper, a 5$\times$5$\times$0.09 in. quartz stamp whose critical dimension is 377 nm was fabricated using the etch process in which a Cr film was employed as a hard mask for transferring nanostructures onto the quartz plate. To effectively apply tile fabricated 5-in. stamp to UV-NIL on a 4-in. Si wafer, we have proposed a new UV-NIL process using a multi-dispensing method as a way to supply resist on a wafer Experiments have shown that the multi-dispensing method can enable UV-NIL rising a large-area stamp.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.2
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• pp.70-77
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• 1998

An aerial image simulator for the synchroton X-ray proximity lithography system has been developed. The modal expansion method and Rayleigh-Sommerfeld diffraction theory are used in calculating the aerial image which is formed by diffracting of the partially coherent X-ray, Experimental results of PALC(POSTECH Advanced Lithography Center) lighography system and simulated results are compared. The experimental and theoretical values of the width of replicated lines are consisted with the relative error less than ~5%. The method to determine the divergent angle of X-ray from the analysis of the width of replicated lines is given.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.12
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• pp.62-67
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• 1997

The optical lithography wit an ArF excimer laser as a light source is expected to be used in the mass production of giga-bit DRAMs which require less than 0.2.mu.m minimum feature size. In this case, the distortion of a patterned image becomes very severe, since the lithography porcess is performed at the resolution limit. Traditionally, the photomask pattern was designed and revised with trial-and-error methods, such as repeated execution of process simulators or actual process experiments which require time and effort. Ths paper describes a program which automatically finds an optimal mask pattern. The program divides the mask plane into cells with same sizes, chooses a cell randomly, changes the transparent/opaque property of the cell, and eventually genrates a mask pattern which produces required image pattern. The program was applied to real DRAM cell patterns to produce mask patterns which genertes image patterns closer to object images than original mask patterns.

• Journal of the Semiconductor & Display Technology
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• v.12 no.4
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• pp.15-20
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• 2013

Nanoimprint lithography (NIL) is the next generation photolithography process in which the photoresist is dispensed onto the substrate in its liquid form and then imprinted and cured into a desired pattern instead of using traditional optical system. There have been considerable attentions on NIL due to its potential abilities that enable cost-effective and high-throughput nanofabrication to the display device and semiconductor industry. In this paper, a pressure vessel type imprinting system was used to imprint patterns with two type pressure values (25 bar, 30 bar) and two type pressure keeping times (5 min, 10 min). The height of transferred pattern and the thickness of residual layer were measured and effects of pressurization conditions - pressure and pressure keeping time - on the pattern transfer in thermal NIL were investigated.

• Proceedings of the Optical Society of Korea Conference
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• 1998.08a
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• pp.192-193
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• 1998

At Rutherford Appleton Laboratory(RAL), a high-repetition rate ps exicmer laser-plasma x-ray source has been developed for x-ray lithography with a calibrated output of up to 1 watt X-ray average power at 1nm wavelength. In a previous reports this compact x-ray source was used to print 0.18$\mu$m lines for a gate on Si-FET devices and deep three-dimensional structure with 100$\mu$m length, 25$\mu$m width, and 48 $\mu$m depth for a nanotechnology. The deep X-ray lithography is called as LIGA thchnology and getting a wide interest as a new technology for a nano-device. In this report all this works are summarized.

• Proceedings of the Optical Society of Korea Conference
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• 1991.06a
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• pp.88-89
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• 1991

For the micro-lithography using a KrF excimer laser beam(λ=0.248${\mu}{\textrm}{m}$) a mirror system consisting of four spherical surfaces with reduction magnification 5$\times$ is designed. Initially the aplanat condition of the mirror system is considered. And for the further improved performance of the system the distortion free condition and flat field condition within Seidel 3rd order aberrations are added to the above condition. During the process of designing the computer-aided optimization technique is extensively employed. The spherical aberration, coma, field curvature and distortion of the optimized four-spherical mirror system are removed to the diffraction limit, and residual astigmatism and off-axial vignetting are not corrected enough.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.18 no.2
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• pp.144-153
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• 2009

It is widely known that no-slip assumptions are often violated on regular basis in micrometer- or nanometer-scale fluid flow. In the case of cavity-filling process of nanoimprint lithography(NIL), slip phenomena take place naturally at the solid-to-liquid boundaries, that is, at the mold-to-polymer or polymer-to-substrate boundaries. If the slip or partial slip phenomena are promoted at the boundaries, the processing time of NIL, especially of thermal-NIL which consumes more tact time than that of UV-NIL, can be significantly improved. In this paper it is aimed to elucidate how the cavity-filling process of NIL can be influenced by the slip phenomena at boundaries and to what degree those phenomena increase the process rate. To do so, computational fluid dynamics(CFD) analysis of cavity filling process has been carried out. Also, the effect of mold pattern shape and initial thickness of polymer resist were considered in the analysis, as well.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1934-1938
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• 2008

Formation of air bubble is the one of common defects in UV nano imprint lithography. Location of dispensing and volume of droplets are among the most important parameters in the process. ]n this study, UV curable resin droplets with different volumes were dispensed at different locations and pressed to investigate air bubble formation. By varying volume of droplet and dispensing location, process conditions were found for minimum air bubble area.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1727-1732
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• 2008

We present a facile, yet versatile carbon nanofabrication method using electron beam lithography and resist pyrolysis. Various resist nanopatterns were fabricated using a negative electron beam resist, SAL-601, and were then subjected to heat treatment in an inert atmosphere to obtain carbon nanopatterns. Suspended carbon nanostructures were fabricated by wet-etching of an underlying sacrificial oxide layer. Free-standing carbon nanostructures, which contain 122 nm-wide, 15 nm-thick, and 2 ${\mu}m$-long nanobridges, were fabricated by resist pyrolysis and nanomachining processes. Electron beam exposure dose effects on resist thickness and pattern widening were studied. The thickness of the carbon nanostructures was thinned down by etching with oxygen plasma. An electrical biosensor utilizing carbon nanostructures as a conducting channel was studied. Conductance modulations of the carbon device due to streptavidin-biotin binding and pH variations were observed.