• 대한전자공학회논문지SD
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• 제41권8호
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• pp.59-65
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• 2004

본 논문에서는 IT(In-plane switching foisted nematic) 모드를 기반으로 광 투과 특성을 개선시킨 Pseudo-TN IPS(Pseudo-Twisted Nematic In-Plane Switching) 모드를 새롭게 제안하고 그 광 투과 특성을 분석하였다. PTN-IPS 모드의 경우 개구율을 향상시켜 투과율 면적을 향상시킴으로써 종래의 IT 모드보다 약 25%정도의 높은 광 투과 특성을 나타내었으며, 전압인가에 따른 광 투과율의 변화가 선형적이므로, 광 투과율 조절을 위한 액정의 제어가 IT 모드에 비해 용이함을 확인하였다. 또한, IT 모드에 비해 수평방향 대비비는 약 8%정도 특성이 열화 되었으나 수직 방향에 있어서는 약 20%이상의 특성개선을 확인 할 수 있었다. 이와 더불어, 기존 IT 모드가 가지고 있는 샐 갭에 대한 특성 및 장점을 가지고 있어, 차세대 액정 셀을 개발하는데 유용하게 사용될 것이라 생각된다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1786-1788
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• 1999

In this paper, we studied Surface Discharge Type Flat Fluorescent Lamp with High Luminance for LCD Backlighting, Liquid Crystal display(LCDs) demand the use of fluorescent lamp as the backlighting source. This lamp is Surface Discharge Type structure with a pair of Sodalime glass, insulator layer, phosphor layer, and Xe gas gap. In spite of its simple structure, the lamp has uniform and stable discharge over entire volume. Till now, we measured the current-voltage(V-I), Firing Voltage, Sustain Voltage for 0.5mm, 1mm electrode gap. In experiment result, long gap cell structure cause high firing voltage. The rising in firing voltage in long gap structure could not be explained by paschen's law because of non-uniform electric field.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.271-272
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• 2009

We fabricated a hybrid aligned film using reactive rod-like mesogen to reduce light leakage of twisted nematic(TN) cell in off-axis of the dark state. We proved that the fabricated compensation film has hybrid alignment by changing phase retardation according to polar angle. In this paper, we confirmed characteristics of compensation film through simulation results and found the matching factor of simulation results and experimental result. In result, the maximum pretilt angle of hybrid compensated film is $19^{\circ}$ which has phase retardation 0.1445.

• 대한기계학회논문집A
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• 제31권12호
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• pp.1173-1179
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• 2007

In recent years, research to machine large-surface micro-features has become important because of the light guide panel of a large-scale liquid crystal display and the bipolar plate of a high-capacity proton exchange membrane fuel cell. In this study, in order to realize the systematic design technology and performance improvements of an ultra-precision machine for machining the large-surface micro-features, a structural characteristic analysis was performed using its virtual prototype. The prototype consisted of gantry-type frame, hydrostatic feed mechanisms, linear motors, brushless DC servo motor, counterbalance mechanism, and so on. The loop stiffness was estimated from the relative displacement between the tool post and C-axis table, which was caused by a cutting force. Especially, the causes of structural stiffness deterioration were identified through the structural deformation analysis of sub-models.

• 산업공학
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• 제15권4호
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• pp.325-337
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• 2002

In this study we consider the problem of production planning of TFT-LCD(Thin Film Transistor - Liquid Crystal Display) production factory. Due to the complexities of the TFT-LCD production processes, it is difficult to schedule the production planning, and the study about automated scheduler is insufficient. In addition, the existing production method is a Push-System to raise the operation rate with expensive equipment, that has the problem to satisfy the due-date. This study presents an algorithm having a concept of Pull-System that satisfies the due-date and considers specialties of TFT-LCD production process. We make MPS(Master Production Schedule) according to the sales order, and present algorithms for scheduling about In/Out plan considering factory capacity, line balancing, material requirement, and inventory level of all Array, Cell, and Module processes. These algorithms are integrated as an automated production system, and we implement them in the actual TFT-LCD factory circumstance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.788-791
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• 2002

Tin doped indium oxide(ITO) films are highly conductive and transparent in the visible region whose property leads to the applications in solar cell, liquid crystal display, thermal heater, and other sensors. This paper investigated ITO films as a transparent conducting films for application of PDP. ITO films were grown on glass substrate by RF magnetron sputtering method. To achieve high transmittance and low resistivity, we examined the various film deposition such as substrate temperature, gas pressure, annealing temperature, and deposition time. We recommend the substrate temperature of $500^{\circ}C$ and post annealing of $200^{\circ}C$ in $O_2$ atmosphere for good conductivity and transmittance. From XRD examination, ITO films showed a preferred(222) orientation. As substrate temperature increased from RT to $500^{\circ}C$, the intensity of the (222) peak increased. The highest peak intensity was observed at a substrate temperature of $500^{\circ}C$. with the optimum growth conditions, ITO films showed resistivity of $1.04{\times}10^{-4}{\Omega}-cm$ and transmittance of 81.2% for a film 300nm thick in the wavelength range of the visible spectrum.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.857-860
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• 2002

The material that is both conductive in electricity and transparent to the visible-ray is called transparent conducting thin film. It has many field of application such as solar cell, liquid crystal display, transparent electrical heater, selective optical filter, and a optical electric device. In this study, indium tin oxide (ITO ; Sn-doped $In_2O_3$) thin films were deposited on $SiO_2$/soda-lime glass plates by a dc magnetron sputtering technique. The crystallinity and electrical properties of the films were investigated by X-ray diffraction(XRD), atomic force microscopy (AFM) scanning and 4-point probe. The optical transmittance of ITO films in the range of 300-1000nm were measured with a spectrophotometer. As a result, we obtained polycrystalline structured ITO films with (222), (400), and (440) peak. Transmittance of all the films were higher than 90% in the visible range.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.857-860
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• 2003

Tin doped indium oxide(ITO) and Al doped zinc oxide(ZnO:Al) films, which are widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The electrical and optical properties of both the ITO and ZnO:Al thin films were investigated as functions of substrate temperature, working gas pressure and deposition time. ITO and ZnO:Al films with the the present experimental conditions of temperature and pressure showed resistivity of $2.36{\times}10^{-4}{\Omega}-cm,\;9.42{\times}10^{-4}{\Omega}-cm$ and transmittance of 86.28%, 90.88% in the wavelength range of the visible spectrum, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1391-1394
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• 1998

In this paper, we investigated the generation of pretilt for nematic liquid crystal (NLC) in a cell with linearly polarized ultraviolet (UV) light irradiation on polyimide (PI) surface. The pretilt angle of the NLC increases with increasing the incident angle in the cells with S-wave polarized UV light irradiation on PI surface. It is considered that the pretilt angle of the NLC increased due to decreasing the UV light intencity. We suggest that the pretilt angle of the NLC is attributed to asymmetry triangular of the polymer surface with S-wave polarized UV light irradiation on PI surface. Also, we consider that the asymmetry triangular of the Polymer not formed with P-wave polarized UV light irradiation on PI surface. Therefore, the pretilt angle of the NLC is attributed to asymmetry triangular of the polymer surface with UV light irradiation on PI surface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.969-972
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• 2004

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. In this paper the effect of doping amounts of $Al_2O_3$ on the electrical, optical and morphological properties were investigated experimentally, The results show that the structural and electrical properties of the film are highly affected by the doping. The optimum growth conditions were obtained for films doped with 2 wt% of Al203 which exhibit a resistivity of $8.5{\times}10^{-4}{\Omega}-cm$ associated with a transmittance of 91.7 % for 840 nm in film thickness in the wavelength range of the visible spectrum.