• Korean Journal of Optics and Photonics
• /
• v.10 no.6
• /
• pp.448-452
• /
• 1999

The Gaussian impulse fUllction initially assumed in the inverse problem is $e^{-\sigma^2\chi^2}$. The modified Gaussian amplitude pupil function $e^{\frac-{\omega^2}{4\sigma^2}$ is obtained by the inverse Fourier transform of $e^{-\sigma^2\chi^2}$. A Gaussian amplitude modulation plate (GAMP) is designed and fabricated by using absorption and transparence glass which are the same refractive index. It is compared the experimental transmittance with theoretical that of GAMP. It is found that the linewidth of Gaussian optical imaging system obtained by wavelength is $0.365{\mu}m$ and NA is 0.07 is decrease 2/3 than that of Rayleigh.

• Korean Journal of Optics and Photonics
• /
• v.5 no.1
• /
• pp.100-105
• /
• 1994

We have reduced the oscillating linewidth of the commercial single mode InGaAsP visible laser diodes which emits in the 657 nm region of the spectrum down to 10 MHz by making a extended cavity employing the Littrow-type grating. The wavelength tuning characteristics of the commercial visible laser diode (CQL820D, Philips Co.) for the grating angle, laser temperature, and injection currents were measured by using the wavemeter. The proportional coefficients of the laser were found to be 1 THzlmrad, 32.4 GHz/K, and 6.14 GHz/mA, respectively.tively.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.15 no.8
• /
• pp.1791-1796
• /
• 2011

An optical fiber short period grating of 0.7 nm as a 3 dB wavelength linewidth was fabricated using a Gaussian distributed KrF Eximer laser and a phase mask. This grating has temperature dependancy of 0.01 nm/$^{\circ}C$ over the range of -10 $^{\circ}C$ ~ 70 $^{\circ}C$and no difference between temperature directions. An optical fiber long period grating of 14.22 nm as a 3 dB linewidth was also fabricated using a amplitude mask and has dependancy of 0.01 nm/$^{\circ}C$ over the same range.

• Korean Journal of Optics and Photonics
• /
• v.3 no.2
• /
• pp.117-122
• /
• 1992

2-color 3-step resonance photoionization scheme has been used for selective photoionization of mercury isotopes. The levels of $6^3P_1$ and $6^1D_2$ were selected as intermediate excited levels, and the laser wavelengths used were 253.7 nm for the first excitation and 313.2 nm for the second excitation and ionization. Selective excitation for individual isotope was realized in the first excitation step with a single-longitudinal-mode (SLM) dye laser rrf ~700 MHz linewidth. For the second excitation and ionization step, a dye laser with relatively large linewidth of ~5 GHz was used. In this work the effect of laser intensities on isotope selectivity was analyzed from the mass spectra obtained in real time from the time-of-flight mass spectrometer.

• Journal of Magnetics
• /
• v.16 no.2
• /
• pp.108-113
• /
• 2011

The electron spin resonance lineshape (ESRLS) function for the electron spin resonance linewidth (ESRLW) of $Cr^{3+}$ (S = 3/2) in ferroelectric lithium niobate single crystals doped with 0.05 wt% of Cr, is obtained by using the projection operator technique (POT), developed by Argyres and Sigel. The ESRLS function is calculated to be axially symmetric about the c - axis and analyzed by using the spin Hamiltonian $H_{SP}={\mu}_B(B{\cdot}{^\leftrightarrow_{g}}{\cdot}S)+S{\cdot}{^\leftrightarrow_{D}}{\cdot}S$ with the parameters g = 1.972 and D = $0.395\;cm^{-1}$. In the ca plane, the linewidths show a strong angular dependence, whereas in the ab plane, they are independent of the angle. This result implies that the resonance center has an axial symmetry along the c - axis. Further, from the temperature dependence of the linewidths that is shown, it can be seen that the linewidths increase as the temperature increases, at a frequency of v = 9.27GHz. This result implies that the scattering effect increases with increasing temperature. Thus, the POT is considered to be more convenient to explain the scattering mechanism as in the case of other optical resonant systems.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2002.11a
• /
• pp.656-661
• /
• 2002

Multipass Ti:sapphire amplifier for the light source of lidar was developed in an angular-multiplexing, and the characteristics of output energy and spectrum was investigated. In the two-stage multipass amplifier, we obtained the maximum output energy of 42 mJ, the amplification gain of 21 dB and the output efficiency of 26% on the wavelength of 790 nm. In the tuning range of 715~930nm the spectral linewidth is 0.05 $cm^{-1}$ /. The conversion efficiencies of 35% for SHG at 780 m and 13% for THG at 390 nm are obtained respectively. The continuous tunabilities of 240~306 m UV region and 360~460 nm in deep-blue region could be achieved.

• Korean Journal of Optics and Photonics
• /
• v.6 no.3
• /
• pp.228-232
• /
• 1995

We have made modulation doped SMQW-PBH-DFB-LD for high speed optical communications. The waveguide and barrier layers were doped by Zn with the concentration of $1.2 \times 10^{18}cm^{-1}$. Mean threshold current and slope efficiency were 24.88 mA (minimum 16 mA) and 0.197 mW/mA (maximum 0.275 mW/mA) respectively. Linewidth enhancement factor ($\alpha$) of MD-SMQW-PBH-DFB-LD was reduced than that of SMQW-PBH-DFB-LD. Linewidth enhancement factor of 1.8 owes to the large gain coefficient of modulation doped active layer. The resonance frequency was linearly increased with the square root of optical power. The resonance frequency in small signal modulation was measured as 8 GHz and -3 dB modulation bandwidth was 10 GHzat $46mA(I_{th}+30mA)$..

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.477-478
• /
• 2006

Characteristics of InAs/GaAs quantum dot (QD) ridge laser diodes (LDs) are investigated for high-power $1.3\;{\mu}m$ applications. For QD ridge LDs with a $5-{\mu}m$-wide stripe and a 1-mm-long cavity, the emission wavelength of 1284.1 nm, the single-uncoated-facet CW output power as high as 90 mW, the external efficiency of 0.31 W/A and the threshold current density of $800\;mA/cm^2$ are obtained. The linewidth enhancement factor ($\alpha$-factor) is successfully measured to be between 0.4 and 0.6, which are about four times as small values with respect to conventional quantum well structure. It is possible that this result significantly reduce the filamentation of far-field profiles resulting in better beam quality for high power operation.

• Journal of the Korean Physical Society
• /
• v.73 no.9
• /
• pp.1279-1282
• /
• 2018

This paper reports the deposition of a metal line using a multilayer stack and laser-induced forward transfer (LIFT) using a low cost continuous wave blue laser with a wavelength of 450 nm. The donor structure was composed of a light-to-heat (LTH) layer, a release layer, and a transfer layer in series. Amorphous silicon as the LTH layer absorbs photon energy and converts it to heat. A release layer was melted so that a silver transfer layer would be transferred to the receiver substrate. The transferred silver layer showed reasonable physical and electrical characteristics. A low cost fine linewidth metal layer could be achieved using this modified LIFT technique and blue laser.

• Current Optics and Photonics
• /
• v.5 no.5
• /
• pp.500-505
• /
• 2021

We demonstrated a wide-fan-angle flat-top irradiance pattern with a very narrow linewidth by using an aspheric lens and a long-pitch reflective diffraction grating. First, we numerically designed a diffraction-based linear beam homogenizer. The structure of the Al diffraction grating with an isosceles triangular shape was optimized with 0.1-mm pitch, 35.5° slope angle, and 0.02-mm radius of the rounding top. According to the numerical results, the linear uniformity of the irradiance was more sensitive to the working distance than to the shape of the Al grating. The designed Al grating reflector was fabricated by using a conventional mold injection and an Al coating process. A uniform linear irradiance of 405-nm laser diode with a 100-mm flat-top length and 0.176-mm linewidth was experimentally demonstrated at 140-mm working distance. We believe that our proposed linear beam homogenizer can be used in various potential applications at a precise inspection system such as three-dimensional morphology scanner with line lasers.