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A Real-time Copper Foil Inspection System using Multi-thread (다중 스레드를 이용한 실시간 동판 검사 시스템)

  • Lee Chae-Kwang;Choi Dong-Hyuk
    • Journal of KIISE:Computing Practices and Letters
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    • v.10 no.6
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    • pp.499-506
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    • 2004
  • The copper foil surface inspection system is necessary for the factory automation and product quality. The developed system is composed of the high speed line scan camera, the image capture board and the processing computer. For the system resource utilization and real-time processing, multi-threaded architecture is introduced. There are one image capture thread, 2 or more defect detection threads, and one defect communication thread. To process the high-speed input image data, the I/O overlap is used through the double buffering. The defect is first detected by the predetermined threshold. To cope with the light irregularity, the compensation process is applied. After defect detection, defect type is classified with the defect width, eigenvalue ratio of the defect covariance matrix and gray level of defect. In experiment, for high-speed input image data, real-time processing is possible with multi -threaded architecture, and the 89.4% of the total 141 defects correctly classified.

Lane Detection based Open-Source Hardware according to Change Lane Conditions (오픈소스 하드웨어 기반 차선검출 기술에 대한 연구)

  • Kim, Jae Sang;Moon, Hae Min;Pan, Sung Bum
    • Smart Media Journal
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    • v.6 no.3
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    • pp.15-20
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    • 2017
  • Recently, the automotive industry has been studied about driver assistance systems for helping drivers to drive their cars easily by integrating them with the IT technology. This study suggests a method of detecting lanes, robust to road condition changes and applicable to lane departure warning and autonomous vehicles mode. The proposed method uses the method of detecting candidate areas by using the Gaussian filter and by determining the Otsu threshold value and edge. Moreover, the proposed method uses lane gradient and width information through the Hough transform to detect lanes. The method uses road lane information detected before to detect dashed lines as well as solid lines, calculates routes in which the lanes will be located in the next frame to draw virtual lanes. The proposed algorithm was identified to be able to detect lanes in both dashed- and solid-line situations, and implement real-time processing where applied to Raspberry Pi 2 which is open source hardware.

Study on The Electrical Characteristic Extraction of PI(Poly Imide) Substrate using T-resonator Method (T-resonator를 이용한 PI(Poly Imide) 기판의 전기적 특성 추출에 관한 연구)

  • Lee, Gwang-Hoon;Yoo, Chan-Sei;Lee, Woo-Sung;Yang, Ho-Min;Jung, Han-Ju;Kim, Hong-Sam;Lee, Bong-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.222-222
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    • 2007
  • RF circuit을 구현하는데 있어서 기판의 전기적 특성을 정확하게 아는 것은 원하는 결과를 추출하기 위해 매우 중요하다. 본 연구에서는 현재 사용되고 있는 PI 기판의 전기적인 특성인 유효 유전율과 loss tangent 값을 T-resonator률 이용해 정확하게 측정하고자 했다. T-resonator는 microstrip 구조로 구현 되었으며 conductor material은 Cu를 사용하였다. PI 기판의 두께는 25um, Cu의 두께는 PI 기판의 종류에 따라 12um 와 18um, T-resonator line width는 50um로 구현하였다. 또한 공진 주파수에 따라 stub 길이가 다른 10개의 T-resonator를 제작하였다. PI 기판의 유효 유전율을 구하기 위해 stub 길이의 open-end effect와 T-junction effect를 고려하였으며 수식을 통해 정확한 유효 유전률을 추출하였다. 또한 PI 기판의 loss tangent 추출에 필요한 dielectric loss를 추출하기 위해 unload quality factor를 분석하였다. Unload quality factor는 dielectric loss, conductor loss, radiation loss를 구성되며 conductor loss와 radiation loss를 수식에 의해 구하고 dielectric loss를 추출 하였다. 추출 된 dielectric loss를 통해 각각의 T-resonator의 loss tangent 값을 구하였다. T-resonator를 이용한 PI 기판의 측정은 비교적 복잡한 수식에 의해 이루어지지만 정확한 data를 얻을 수 있고 다른 재료의 전기적 특성을 추출하는데 응용이 가능하다.

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Parameter Evaluation of High-Power Pulse Transformer for L-Band 30-MW Klystron (L-band 30-MW 클라이스트론용 고출력 펄스트랜스포머의 파라미터 평가)

  • Jang, S.D.;Son, Y.G.;Kwon, S.J.;Oh, J.S.;Kim, S.H.;Yang, H.R.;Moon, S.I.;Kwon, B.H.;Cho, M.H.;NamKung, W.
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1079-1081
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    • 2007
  • An L-band Linear Accelerator System for E-beam sterilization is under construction for bio-technology application. The klystron-modulator system as an RF microwave source has an important role as major components to offer the system reliability for long time steady-state operations. A PFN line type pulse generator with a peak power of 71.5-MW, $7\;{\mu}s$, 285 pps is required to drive a high-power klystron. The high power pulse transformer has a function of transferring pulse energy from a pulsed power source to a high power load. The pulse transformer producing a pulse with a peak voltage of 275 kV is required to produce 30-MW peak and 60 kW average RF output power at the frequency of 1.3-GHz. We have designed the high power pulse transformer with 1:13 step-up ratio. The peak and average power capability is 71.5-MW (275 kV, 260 A at load side with $7\;{\mu}s$ pulse width) and 130 kW, respectively. In this paper, we present measurements and its analysis on the design parameters, and an initial test result as well as a design concept on the high-power pulse transformer.

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Sclerotium Rot of Sponge Gourd Caused by Sclerotium rolfsii (Sclerotium rolfsii에 의한 수세미오이 흰비단병)

  • Kwon, Jin-Hyeuk;Kim, Jin-Woo;Lee, Yong-Hwan;Shim, Hong-Sik
    • Research in Plant Disease
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    • v.18 no.1
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    • pp.54-56
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    • 2012
  • Sclerotium rot of sponge gourd occurred at the experimental field of Gyeongsangnam-do Agricultural Research and Extension Services in August 2010. The infected fruits showed water-soaked and rot symptoms. White mycelial mats spread over lesions, and then sclerotia were formed on fruit and near soil line. The sclerotia were globoid in shape, 1-3 mm in size and white to brown in color. The optimum temperature for mycelial growth and sclerotia formation on PDA was $30^{\circ}C$ and the hyphal width was 4-8 ${\mu}m$. The typical clamp connections were observed in the hyphae of the fungus grown on PDA. On the basis of mycological characteristics, ITS rDNA sequence analysis, and pathogenicity to host plants, this fungus was identified as Sclerotium rolfsii Saccardo. This is the first report of sclerotium rot on sponge gourd caused by S. rolfsii in Korea.

Measurement of electron temperature and density using Stark broadening of the coaxial focused plasma for extreme ultraviolet (EUV) lithography

  • Lee, Sung-Hee;Hong, Young-June;Choi, Eun-Ha
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.475-475
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    • 2010
  • We have generated Ar plasma in dense plasma focus device with coaxial electrodes for extreme ultraviolet (EUV) lithography and investigated an emitted visible light for electro-optical plasma diagnostics. We have applied an input voltage 4.5 kV to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ar gas of pressure 8 mTorr. The inner surface of the cylindrical cathode has been attatched by an acetal insulator. Also, the anode made of tin metal. If we assumed that the focused plasma regions satisfy the local thermodynamic equilibrium (LTE) conditions, the electron temperature and density of the coaxial plasma focus could be obtained by Stark broadening of optical emission spectroscopy (OES). The Lorentzian profile for emission lines of Ar I of 426.629 nm and Ar II of 487.99 nm were measured with a visible monochromator. And the electron density has been estimated by FWHM (Full Width Half Maximum) of its profile. To find the exact value of FWHM, we observed the instrument line broadening of the monochromator with a Hg-Ar reference lamp. The electron temperature has been calculated using the two relative electron density ratios of the Stark profiles. In case of electron density, it has been observed by the Stark broadening method. This experiment result shows the temporal behavior of the electron temperature and density characteristics for the focused plasma. The EUV emission signal whose wavelength is about 6 ~ 16 nm has been detected by using a photo-detector (AXUV-100 Zr/C, IRD). The result compared the electron temperature and density with the temporal EUV signal. The electron density and temperature were observed to be $10^{16}\;cm^{-3}$ and 20 ~ 30 eV, respectively.

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높은 In 조성을 갖는 InGaN 구조의 열처리 변수에 따른 구조 및 광학적 특성

  • Lee, Gwan-Jae;Jo, Byeong-Gu;Lee, Hyeon-Jung;Kim, Jin-Su;Lee, Jin-Hong;Im, Jae-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.228.2-228.2
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    • 2013
  • 본 논문은 InN와 GaN를 교대로 증착하는 교번성장법(Alternate Growth Method)을 이용해 형성한 높은 인듐(Indium) 조성을 갖는 InGaN (HI-InGaN) 구조의 열처리(Rapid Thermal Annealing, RTA) 온도 및 시간에 대한 구조와 광학적 특성을 Double Crystal X-ray Diffraction (DCXRD), Transmission Electron Microscopy와 Photoluminescence (PL) 장비를 사용하여 분석한 결과를 보고한다. DCXRD 스펙트럼에서 HI-InGaN 박막은 GaN(0002)로부터 $2.98^{\circ}$ 분리된 위치에서 회절 신호를 관찰 할 수 있다. 그리고 GaN와 HI-InGaN 신호 사이의 넓은 범위에서 미약하지만 신호가 관찰 되는데, 이는 InN와 GaN 계면에서 발생하는 상호확산 확률의 차이에 기인한 In 조성이 다른 InGaN 신호로 해석할 수 있다. 열처리 온도를 $775^{\circ}C$로 고정하고 시간을 10, 20, 30초로 각각 변화시켜 RTA를 진행한 DCXRD 스펙트럼에서 GaN(0002)로부터 $0.7{\sim}1.1^{\circ}$ 떨어진 위치에서 InGaN 피크를 확인 할 수 있다. RTA 시간이 증가 할수록 HI-InGaN 신호의 위치가 GaN 피크 방향으로 이동하며, 세기가 증가하는 것을 확인 할 수 있다. HI-InGaN의 PL 스펙트럼에서 상온 발광파장은 1369 nm 이며, 반치폭(Line-width)은 51.02 nm을 보였다. RTA 수행 후 발광파장에 따른 광세기가 각각 달라졌으며, 특히 900 nm 부근의 신호가 상대적으로 크게 증가하는 것을 확인할 수 있었다. RTA에 따른 HI-InGaN의 구조 및 광학적 특성 변화를 InN와 GaN 계면에서 In, Ga 원자의 상호확산 효과현상으로 논의할 예정이다.

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Optical Diagnostics for Pulse-discharged Plasma by Marx Generator and Its Application for Modifications of Hemoglobin and Myoglobin Proteins

  • Park, Ji Hoon;Attri, Pankaj;Hong, Young June;Park, Bong Sang;Jeon, Su Nam;Choi, Eun Ha
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.176.2-176.2
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    • 2013
  • Property of optical diagnostics for pulse-discharged plasma in liquid and its biological applications to proteins are investigated by making use of high voltage Marx generator. The Marx generator has been consisted of 5 stages, where each charging capacitor is 0.5 ${\mu}F$, to generate a high voltage pulse with rising time of $1{\mu}s$. We have applied an input voltage of 6 kV to the each capacitor of 0.5 ${\mu}F$. High voltage pulsed plasma has been generated inside a polycarbonate tube by a single-shot operation, where the breakdown voltage is measured to be 7 kV, current of 1.2 kA, and pulse width of ~ 1 ${\mu}s$ between the two electrodes of anode-cathode whose material is made of tungsten pin, which are immersed into the liquids. We have investigated the emitted hydrogen lines for optical diagnostics of high voltage pulsed plasma. The emission line of 656.3 nm from $H-{\alpha}$ and 486.1 nm from $H-{\beta}$ have been measured by a monochromator. If we assumed that the focused plasma regions satisfy the local thermodynamic equilibrium conditions, the electron temperature and density of the high voltage pulsed plasma in liquid could be obtained by the Stark broadening of optical emission spectroscopy. For the investigation of the influence of pulsed plasma on biological proteins, we have exposed it onto the proteins such as hemoglobin and myoglobin. The structural changes in these proteins and their analysis have also been obtained by circular dichroism (CD) and ultraviolet (UV) visible spectroscopy.

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Development on a Relay Lens Type Scope with 70 mm Eye Relief (70 mm Eye Relief를 갖는 릴레이 렌즈 방식 스코프 개발)

  • Park, Seung-Hwan;Lee, Dong-Hee
    • Journal of Korean Ophthalmic Optics Society
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    • v.14 no.3
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    • pp.29-35
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    • 2009
  • Purpose: To develop a relay lens type scope with 70 mm eye relief. Methods: By using Sigma 2000 design program, we designed and manufactured a relay lens type scope with 70 mm eye relief, which is integrated after designing an objective part with relay lenses and an eyepiece part, respectively. Results: The characteristics of the relay lens type scope with 70 mm eye relief whch is designed and manufactured by methods, which integrate after respectively designing an object part with relay lenses and an eyepiece part, have the magnification of $+4{\times}$,the length from 1st lens to last lens of about 105 mm, the barrel diameter of 18mm, and the effective diameter of 13 mm. Also we know that the resolution line width is 275 cycles/rad at the 30% MTF value criterion. Conclusions: We could design and manufacture the relay type scope with 70 mm eye relief, the characteristics of which have the magnification of $+4.0{\times}$the MTF above 30% at 275 cycles/rad, and the length from 1st lens to last lens of about 105 mm.

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Milling of NiCo Composite Silicide Interconnects using a FIB (FIB를 이용한 니켈코발트 복합실리사이드 미세 배선의 밀링 가공)

  • Song, Oh-Sung;Yoon, Ki-Jeong
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.9 no.3
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    • pp.615-620
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    • 2008
  • We fabriacted thermal evaporated $10nm-Ni_{1-x}Co_x$(x=0.2, 0.6, and 0.7) films on 70 nm-thick polysilicon substrate with $0.5{\mu}m$ line width. NiCo composite silicide layers were formed by rapid thermal annealing (RTA) at the temperatures of $700^{\circ}C$ and $1000^{\circ}C$. Then, we checked the microstructure evaluation of silicide patterns. A FIB (focused ion beam) was used to micro-mill the interconnect patterns with low energy condition (30kV-10pA-2 sec). We investigated the possibility of selective removal of silicide layers. It was possible to remove low resistance silicide layer selectively with the given FIB condition for our proposed NiCo composite silicides. However, the silicides formed from $Ni_{40}Co_{60}$ and $Ni_{30}Co_{70}$ composition showed void defects in interconnect patterns. Those void defects hinder the selective milling for the NiCo composite silicides.