• Title/Summary/Keyword: limiters

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Characteristics of the Flux-lock Type Superconducting Fault Current Limiter According to the Iron Core Conditions (자속구속형 초전도 전류제한기의 철심조건에 따른 특성)

  • Nam, Gueng-Hyun;Lee, Na-Young;Choi, Hyo-Sang;Cho, Guem-Bae
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.20 no.7
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    • pp.38-45
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    • 2006
  • The superconducting fault current limiters(SFCLs) provide the effect such as enhancement in power system reliability due to limiting the fault current within a few miliseconds. Among various SFCLs we have developed a flux-lock type SFCL and exploited a special design to effectively reduce the fault current according to properly adjustable magnetic field after the short-circuit test. This SFCL consists of two copper coils wound in parallel on the same iron core and a component using the YBCO thin film connected in series to the secondary copper coil. Meanwhile, operating characteristics can be controlled by adjusting the inductances and the winding directions of the coils. To analyze the operational characteristics, we compared closed-loop with open-loop iron core. When the applied voltage was 200[Vrms] in the additive polarity winding, the peak values of the line current the increased up to 30.71[A] in the closed-loop and 32.01[A] in the open-loop iron core, respectively. On the other hand, in the voltages generated at current limiting elements were 220.14[V] in the closed-loop and 142.73[V] in the opal-loop iron core during first-half cycle after fault instant under the same conditions. We confirmed that the open-loop iron core had lower power burden than in the closed-loop iron core. Consequently, we found that the structure of iron core enabled the flux-lock type SFCL at power system to have the flexibility.

Design of pHEMT channel structure for single-pole-double-throw MMIC switches (SPDT 단일고주파집적회로 스위치용 pHEMT 채널구조 설계)

  • Mun Jae Kyoung;Lim Jong Won;Jang Woo Jin;Ji, Hong Gu;Ahn Ho Kyun;Kim Hae Cheon;Park Chong Ook
    • Journal of the Korean Vacuum Society
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    • v.14 no.4
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    • pp.207-214
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    • 2005
  • This paper presents a channel structure for promising high performance pseudomorphic high electron mobility transistor(pHEMT) switching device for design and fabricating of microwave control circuits, such as switches, phase shifters, attenuators, limiters, for application in personal mobile communication systems. Using the designed epitaxial channel layer structure and ETRI's $0.5\mu$m pHEMT switch process, single pole double throw (SPDT) Tx/Rx monolithic microwave integrated circuit (MMIC) switch was fabricated for 2.4 GHz and 5 GHz band wireless local area network (WLAN) systems. The SPDT switch exhibits a low insertion loss of 0.849 dB, high isolation of 32.638 dB, return loss of 11.006 dB, power transfer capability of 25dBm, and 3rd order intercept point of 42dBm at frequency of 5.8GHz and control voltage of 0/-3V These performances are enough for an application to 5 GHz band WLAN systems.