• Journal of Food Hygiene and Safety
• /
• v.36 no.5
• /
• pp.447-453
• /
• 2021

In this study, the effectiveness of physical control technology, a combined light sterilization (LED, UV) and hot water treatment in reducing Aspergillus ochraceus for food production environment was investigated. In brief, 1 mL aliquot of A. ochraceus spore suspension (10^7-8 spore/mL) was inoculated onto stainless steel chips, which was then dried at 37℃, and each was subjected to different physical treatment. Treatments were performed for 0.5, 1, 2, 5, 8, and 11 hours to reduce the strains using a light-emitting diode, but no significant difference was confirmed among the treatments. However, a significant reduction was observed on the chips treated with UV-C exposure and hot water immersion. After being treated solely with 360 kJ/m² of UV-C on stainless steel chip, the fungi were significantly reduced to 1.27 log CFU/cm². Concerning the hot water treatment, the initial inoculum amount of 6.49 log CFU/cm² was entirely killed by immersion in 83℃ water for 5 minutes. Maintaining a high temperature for 5 minutes at the site is difficult. Thus, considering economic feasibility and usability, we attempted to confirm the appropriate A. ochraceus reduction conditions by combining a relatively low temperature of 60℃ and UV rays. With the combined treatments, even in lukewarm water, A. ochraceus decreased significantly through the increases in the immersion time and the amount of UV-C irradiation, and the yield was below the detection limit. Based on these results, if work tools are immersed in 60℃ lukewarm water for 3 minutes and then placed in a UV sterilization device for more than 10 minutes, the possibility of A. ochraceus cross-contamination during work is expected to be reduced.

• Journal of Bio-Environment Control
• /
• v.28 no.2
• /
• pp.178-184
• /
• 2019

Strawberry ($Fragaria{\times}ananassa$) is one of the most important and popular fruit crops in the world, and 'Sulhyang' is one of the principal cultivars cultivated in the Republic of Korea for the domestic market. The growth and flower induction in strawberry is the process which influences directly on fruit bearing and yield of this crop. In this study, effect of benzyladenine (BA), gibberellic acid ($GA_3$), and salicylic acid (SA) on growth and flower bud induction in strawberry 'Sulhyang' was investigated. The 3-week-old runner plants, grown in 21-cell propagation trays, were potted and cultivated in growth chambers with $25^{\circ}C/15^{\circ}C$ (day/night) temperatures, 70% relative humidity (RH), and light intensity of $300{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$ photosynthetic photon flux density (PPFD) provided by white light emitting diodes (LEDs). The runner plants were treated with one of three concentrations, 0 (control), 100, and $200mg{\cdot}L^{-1}$ of BA, $GA_3$, or SA solution. The chemicals were sprayed two times on leaves of runner plants at an interval of two weeks. After 9 weeks the results showed that the application of all chemicals caused reduction of root length and chlorophyll (SPAD) content as compared to the control. The lowest chlorophyll (SPAD) content was recorded in plants treated with $GA_3$. However, the treatment of $200mg{\cdot}L^{-1}$ $GA_3$ promoted leaf area, leaf fresh weight, and plant fresh weight. The greatest flower induction (85%) and number of inflorescences (4.3 inflorescences per plant) were observed in the treatment of $200mg{\cdot}L^{-1}\;SA$, followed by $100mg{\cdot}L^{-1}\;SA$. Overall, results suggest that foliar application of $GA_3$ solution could accelerate plant growth, while foliar application of SA solution could induce hastened flowering. Further studies may be needed to find out the relationship between $GA_3$ and SA solutions treated in a combination, and the molecular mechanism involved in those responses observed.

• Korean Journal of Poultry Science
• /
• v.49 no.3
• /
• pp.139-144
• /
• 2022

This study was conducted to investigate the effect of three different photoperiods on growth performance, blood properties, and stress indicators in broiler chicks between 1-7 days after hatching. Two hundred and fifty-two 1-day-old male broiler chicks (57.0±0.12 g) were divided into three treatments, with 4 replicates per treatment and 22 birds per replicate subjected to three different photoperiods of 24L, 22L/2D and 18L/6D. A light-emitting diode bulb served as the light source, with an illuminance of 30 lx. As an experimental diet, a commercial feed based on a corn-soybean meal, with 22% CP and 3,150 kcal/kg ME diet, and water were fed ad libitum. Body weight gain, feed conversion ratio, and liver weight ratio showed a statistically significant difference between the 18L/6D and 24L treatments (P<0.05), but with no significant difference between the 22L/2D treatment and either the 24L or 18L/6D treatment. The breast meat ratio was 5.59% in the 18L/6D treatment group, which was lower than that of other treatment groups (P<0.05). The triglyceride levels were highest (P<0.05) in the 18L/6D treatment among treatments, but alanine aminotransferase levels were significantly higher (P<0.05) in the 22L/2D treatment than in the 24L treatment. Levels of cytokines, i.e., Interleukin-6 and Tumor Necrosis Factor-α did not show a significant difference among the treatments, but corticosterone content was significantly higher (P<0.05) in the 24L treatment than in the 18L/6D treatment. In conclusion, 22 hours of lighting is appropriate between 1~7 days after hatching, considering growth performance and the overall health of broiler chicks.

• Journal of the Microelectronics and Packaging Society
• /
• v.25 no.1
• /
• pp.1-10
• /
• 2018

Recently, there has been rapid development in the field of flexible electronic devices, such as organic light emitting diodes (OLEDs), organic solar cells and flexible sensors. Encapsulation process is added to protect the flexible electronic devices from exposure to oxygen and moisture in the air. Using numerical simulation, we investigated the effects of the encapsulation layer on mechanical stability of the silicon chip, especially the fracture performance of center crack in multi-layer package for various loading condition. The multi-layer package is categorized in two type - a wide chip model in which the chip has a large width and encapsulation layer covers only the chip, and a narrow chip model in which the chip covers both the substrate and the chip with smaller width than the substrate. In the wide chip model where the external load acts directly on the chip, the encapsulation layer with high stiffness enhanced the crack resistance of the film chip as the thickness of the encapsulation layer increased regardless of loading conditions. In contrast, the encapsulation layer with high stiffness reduced the crack resistance of the film chip in the narrow chip model for the case of external tensile strain loading. This is because the external load is transferred to the chip through the encapsulation layer and the small load acts on the chip for the weak encapsulation layer in the narrow chip model. When the bending moment acts on the narrow model, thin encapsulation layer and thick encapsulation layer show the opposite results since the neutral axis is moving toward the chip with a crack and load acting on chip decreases consequently as the thickness of encapsulation layer increases. The present study is expected to provide practical design guidance to enhance the durability and fracture performance of the silicon chip in the multilayer package with encapsulation layer.

• Journal of the korean academy of Pediatric Dentistry
• /
• v.43 no.4
• /
• pp.365-373
• /
• 2016

Composites are the most useful restorative material. However, composites have some disadvantages such as polymerization shrinkage, long working time, and susceptibility to water and contamination, which are stood out more especially when treating children. To solve these problems, bulk-fill composites have been developed. The aim of this study is to compare mechanical properties of bulk-fill and conventional composites. Bulk-fill composites (SureFil SDR flow (SDR), Tetric N-Ceram bulk fill (TBF)) and conventional composites (Filtek Z-350 (Z-350), Unifil Flow (UF), Unifil Loflo Plus (UL)) were used. The Vickers hardness tester was used to measure the microhardness of materials, and Fourier transform infrared spectroscopy was used to measure the degree of conversion. Polymerization shrinkage was measured by using a linometer. Flexural and compressive properties were measured by using the universal testing machine. Data were statistically analyzed by ANOVA and Scheffe's post hoc test. The level of significance was set to p < 0.05. Most conventional composites showed higher microhardness than bulk-fill composites. However, bulk-fill composites showed a higher top/bottom microhardness ratio than conventional composites. Bulk-fill composites showed a higher top/bottom degree of conversion ratio than conventional composites. The polymerization shrinkage was highest in UL and lowest in Z-350. The polymerization shrinkage of flowable composites was higher than that of non flowable composites. The compressive properties were highest in Z-350 and lowest in SDR and UL. In terms of flexural properties, Z-350 was the highest. However, none of the bulk-fill composites exhibited mechanical properties as good as those of conventional composites. Nonetheless, the ratio of microhardness and degree of conversion, which are important properties of bulk filling, were higher in bulk-fill composites. Therefore, the bulk-fill composites might be considered suitable restorative materials in pediatric dentistry.

• Journal of the Korean Vacuum Society
• /
• v.14 no.2
• /
• pp.78-83
• /
• 2005

Nanometric crystalline silicon (no-Si) embedded in dielectric medium has been paid attention as an efficient light emitting center for more than a decade. In nc-Si, excitonic electron-hole pairs are considered to attribute to radiative recombination. However the surface defects surrounding no-Si is one of non-radiative decay paths competing with the radiative band edge transition, ultimately which makes the emission efficiency of no-Si very poor. In order to passivate those defects - dangling bonds in the $Si:SiO_2$ interface, hydrogen is usually utilized. The luminescence yield from no-Si is dramatically enhanced by defect termination. However due to relatively high mobility of hydrogen in a matrix, hydrogen-terminated no-Si may no longer sustain the enhancement effect on subsequent thermal processes. Therefore instead of easily reversible hydrogen, phosphorus was introduced by ion implantation, expecting to have the same enhancement effect and to be more resistive against succeeding thermal treatments. Samples were Prepared by 400 keV Si implantation with doses of $1\times10^{17}\;Si/cm^2$ and by multi-energy Phosphorus implantation to make relatively uniform phosphorus concentration in the region where implanted Si ions are distributed. Crystalline silicon was precipitated by annealing at $1,100^{\circ}C$ for 2 hours in Ar environment and subsequent annealing were performed for an hour in Ar at a few temperature stages up to $1,000^{\circ}C$ to show improved thermal resistance. Experimental data such as enhancement effect of PL yield, decay time, peak shift for the phosphorus implanted nc-Si are shown, and the possible mechanisms are discussed as well.

• Korean Journal of Environmental Agriculture
• /
• v.32 no.1
• /
• pp.42-47
• /
• 2013

BACKGROUND: As improved LEDs (Light Emitting Diode) industry and decreased the price of LEDs in Korea, some farmers try to using the RED LEDs in green house and open field to increase the production of crop under bad weather condition. The aim of this study is to find out the effect of RED and FAR-RED LEDs lighting on the fruit quality of twelve-year old 'Hongro'/M.26 apple during night after sunset. METHODS AND RESULTS: FAR-RED (730nm, 2 and 4 hour) and RED (620nm, 2 and 4 hour) with 20 LED/PCB were treated in orchard for 16 weeks from June 10 to October 10 in 2009 and 2010 with control as an comparison. In our experiments, leaf weight was significantly higher in RED LEDs than control, tended to be decreased as times of FAR-RED lighting increased. Fruit weight was increased more in RED LEDs than control in 2009 and 2010, but decreased in FAR-RED lighting compared to control in 2010. Firmness and Hunter's a value of fruit were increased in FAR-RED lighting with 2 and 4 h than control. Soluble solid contents were higher in 2 h RED and 2, 4 h FAR-RED LEDs compared to control in 2009, there was no significant difference in 2010. Acid contents were no difference among the treatments. CONCLUSION(S): In our results, we found that RED LEDs was more helpful to increase the fruit weight and FAR-RED LEDs promote to be higher hunter a value of fruit skin. So, we thought that it is necessary to more study if mixed of RED and FAR-RED lighting is more helpful to promote fruit quality of 'Hongro' apple than single lighting of RED or FAR-RED LEDs respectively.

• Journal of Intelligence and Information Systems
• /
• v.17 no.4
• /
• pp.227-240
• /
• 2011

New concepts and ideas often result from extensive recombination of existing concepts or ideas. Both researchers and developers build on existing concepts and ideas in published papers or registered patents to develop new theories and technologies that in turn serve as a basis for further development. As the importance of patent increases, so does that of patent analysis. Patent analysis is largely divided into network-based and keyword-based analyses. The former lacks its ability to analyze information technology in details while the letter is unable to identify the relationship between such technologies. In order to overcome the limitations of network-based and keyword-based analyses, this study, which blends those two methods, suggests the keyword network based analysis methodology. In this study, we collected significant technology information in each patent that is related to Light Emitting Diode (LED) through text mining, built a keyword network, and then executed a community network analysis on the collected data. The results of analysis are as the following. First, the patent keyword network indicated very low density and exceptionally high clustering coefficient. Technically, density is obtained by dividing the number of ties in a network by the number of all possible ties. The value ranges between 0 and 1, with higher values indicating denser networks and lower values indicating sparser networks. In real-world networks, the density varies depending on the size of a network; increasing the size of a network generally leads to a decrease in the density. The clustering coefficient is a network-level measure that illustrates the tendency of nodes to cluster in densely interconnected modules. This measure is to show the small-world property in which a network can be highly clustered even though it has a small average distance between nodes in spite of the large number of nodes. Therefore, high density in patent keyword network means that nodes in the patent keyword network are connected sporadically, and high clustering coefficient shows that nodes in the network are closely connected one another. Second, the cumulative degree distribution of the patent keyword network, as any other knowledge network like citation network or collaboration network, followed a clear power-law distribution. A well-known mechanism of this pattern is the preferential attachment mechanism, whereby a node with more links is likely to attain further new links in the evolution of the corresponding network. Unlike general normal distributions, the power-law distribution does not have a representative scale. This means that one cannot pick a representative or an average because there is always a considerable probability of finding much larger values. Networks with power-law distributions are therefore often referred to as scale-free networks. The presence of heavy-tailed scale-free distribution represents the fundamental signature of an emergent collective behavior of the actors who contribute to forming the network. In our context, the more frequently a patent keyword is used, the more often it is selected by researchers and is associated with other keywords or concepts to constitute and convey new patents or technologies. The evidence of power-law distribution implies that the preferential attachment mechanism suggests the origin of heavy-tailed distributions in a wide range of growing patent keyword network. Third, we found that among keywords that flew into a particular field, the vast majority of keywords with new links join existing keywords in the associated community in forming the concept of a new patent. This finding resulted in the same outcomes for both the short-term period (4-year) and long-term period (10-year) analyses. Furthermore, using the keyword combination information that was derived from the methodology suggested by our study enables one to forecast which concepts combine to form a new patent dimension and refer to those concepts when developing a new patent.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.31-31
• /
• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
• /
• v.14 no.4
• /
• pp.205-212
• /
• 2009

To suggest possible to bioremediation by benthic microalgae Nitzschia sp. isolated from the Jinhae Bay, the studies investigated the effects o flight quality and quantity on the growth of Nitzschia sp. and its growth kinetics for phosphate investigated. The Nitzschia sp. was cultured under blue (450 nm), yellow (590 nm) and red wavelength (650 nm) using light emitting diode (LED) and mixed wavelengths using a fluorescent lamp. The maximum specific growth rate showed the Nitzschia sp. under blue wavelength, although photoinhibition was observed above $100\;{\mu}mol\;m^{-2}\;s^{-1}$. Mixed wavelengths were also observed by decreasing the maximum cell density from high irradiances (>$100\;{\mu}mol$ photons $m^{-2}\;s^{-1}$). The compensation photon flux density ($I_0$) calculated from the mixed wavelengths equated to a depth of 4-10 m in Jinhae Bay, and was lower in the summer season than the depth due to suspended matter (ca. 4 m). Thus, the suitable depth for maximum growth of Nitzschia sp. might be extremely limited. In the growth kinetics for phosphate, half-saturation constant ($K_s$) was similar among different wavelengths, although the maximum growth rate was varied among different wavelengths. Because the $K_s$ was high than that of the phytoplankton, Nitzschia sp. might have adapted to the high nutrient concentrations, and have effective nutrient storage in the cell quota. Thus, Nitzschia sp. may be a useful species for bioremediation of the benthic layer in polluted inner bays by means of irradiated specific wavelength as blue.