• Proceedings of the KIPE Conference
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• 2001.07a
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• pp.364-367
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• 2001

ZVS Full-bridge converter is widely used in medium power level(1-3kW). ZVS can be designed within a limited load range and ZVS failure at light load condition is assumed to be acceptable within the given efficiency and thermal constraints. However, unbalanced ZVS resonant energy caused by dc blocking capacitor may alleviate the switching loss problem at light load condition. ZVS resonant energy is unbalanced by do blocking capacitor. This problem causes loss and heat concentration of a switch leg, In this paper, this problem is analyzed, and a novel control method is proposed to solve the problem.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.875-880
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• 2004

Stray light is the light except the light of the analytic wavelength and the source of measurement error of absorbance. Some experimental results showed that diffractive grating is the major factor of stray light in spectrophotometer. Through the ray tracing with the software tool, classified the paths of the diffractive light from grating and found the range of wavelength which reach the exit slit. The quantity of the stray light(0.025％) is more than the minimum limit of stray light(0.01％) of the single monochromator. A novel optical layout design method, which prevent the reflected rays entering the diffractive grating is proposed.

• Journal of Korean Society of Environmental Engineers
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• v.39 no.5
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• pp.255-264
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• 2017

To evaluate the water quality changes in agricultural reservoir covered with floating photovoltaic solar-tracking systems, the water quality variations with time and depth were monitored on both six sites for light blocking zones and four sites for light penetration zones after the installation of floating photovoltaic solar-tracking systems in Geumgwang reservoir at Anseong-si, Kyeonggi province. For one year with 16 monitoring events, water quality parameters [i.e., water temperature, pH, dissolved oxygen (DO), chlorophyll-a (Chl-a), and blue-green algae (BGA)] were monitored at depths of 0.3 m, 1 m, 3 m, and 5 m, while chemical oxygen demand (COD), total nitrogen (TN), and total phosphorus (TP) were monitored at depths of 0.3 m. Statistically, the difference in all water quality parameters was not significantly different (p > 0.05) at the level of significance of 0.05. Based on these results, the water quality data from light blocking zones (site 1~6) and light penetration zones (site 7~10) were clustered, and were compared with time and depth. As a result, the difference in water temperature, pH, DO, COD, TN, TP, Chl-a, and BGA between light blocking zones and light penetration zones was not significant (p > 0.05) with different time and depth. For Chl-a and BGA, some data from light blocking zones greater than light penetration zones were temporary observed due to the severe drought, low water storage rate, and over growth of periphyton. However, this temporal phenomenon did not impact the water quality. Considering the small water surface area (${\leq}0.5%$) covered by floating photovoltaic solar-tracking systems, the mixing effect of whole Geumgwang reservoir caused by Ekman current and continuous discharge were more dominant than the effect of reduced solar irradiance. Further study is warranted to monitor the changes in water quality and aquatic ecosystems with greater water surface area covered by floating photovoltaic solar-tracking systems for a long time.

• Journal of Practical Agriculture & Fisheries Research
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• v.22 no.1
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• pp.55-63
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• 2020

This study aimed to investigate responses of plant growth and photosynthesis to different kinds of covering materials with selective light transmit for red leaf lettuce (Lactuca sativa L.). Experimental pot design was attached UV blocking filter, red filter, blue filter, and green filter. The kinds of covering materials showed significant results for plant growth especially control, UV blocking filter, and red filter. The photosynthetic rate and anthocyanin content of red leaf lettuce were higher in control and UV blocking filter than others. The quality of red leaf lettuce was low in red, green, and blue film treatments because of too low anthocyanin content.

• Journal of Digital Convergence
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• v.12 no.7
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• pp.291-296
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• 2014

Inserting a $SiO_2$ layer underneath the p-pad electrode as the current blocking layer (CBL) structure and extending p-metal finger patterns, the GaN LEDs using an indium-tin-oxide (ITO) layer show the improved light output intensity, resulting from better current spreading and reduced light loss on the surface of p-pad metal. The LEDs with an oxide layer of $100{\mu}m$-pad-width and $6{\mu}m$-finger-width have better light output intensities than those with an oxide layer of $105{\mu}m$-pad-width and $12{\mu}m$-finger-width. Using the ATLAS device simulator from Silvaco Corporation, the current density distributions on the active layer in CBL LEDs have been investigated.

• Journal of Sensor Science and Technology
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• v.33 no.4
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• pp.224-229
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• 2024

Quantum dot light-emitting diodes (QD-LEDs) are emerging as next-generation displays owing to their high color purity, wide color gamut, and solution processability. Enhancing the efficiency of QD-LEDs involves preventing non-radiative recombination mechanisms, such as Auger and interfacial recombination. Generally, ZnO serves as the electron transport layer, which is known for its higher mobility compared to that of organic semiconductors and can lead to excessive electron injection. Some of the injected electrons pass through the quantum dot emissive layer and undergo non-radiative recombination near or within the organic hole transport layer (HTL), resulting in HTL degradation. Therefore, the implementation of electron blocking layers (EBLs) is essential; however, studies on all-solution-processed inverted InP QD-LEDs are limited. In this study, poly(9-vinylcarbazole) (PVK) is introduced as an EBL to mitigate HTL degradation and enhance the emission efficiency of inverted InP QD-LEDs. Using a single-carrier device, PVK was confirmed to effectively inhibit electron overflow into the HTL, even at extremely low thicknesses. The optimization of the PVK thickness also ensured minimal disruption of the hole-injection properties. Consequently, a 1.5-fold increase in the maximum luminance was achieved in the all-solution-processed inverted InP QD-LEDs with the EBL.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.97-98
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• 2008

n-ZnO/p-Si heterostructure is a good candidate for ZnO-based heterojunction light emitting diodes(LED) because of its competitive price and lower driving voltage. However, the conventional LED shows much lower extraction efficiency, because it has small top contact and large backside contact. In this structure, the injected current from the top contact enters the active region underneath the top contact. Thus, the emitted light is hindered by the opaque top contact. This problem can be solved by using a current-blocking layer(CBL) that prevents the current injection into the active region below the top contact.

• International Journal of Advanced Culture Technology
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• v.9 no.4
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• pp.315-319
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• 2021

Recent impact of 4th industrial revolution is increasing usage of IoT technology along with smartphones and tablet PC. However blue light emitted from electronic devices such as smartphones and tablet PC causes detrimental change to human bodies. As the controversy over the harmfulness of blue light became known through the media and various communities, related markets were formed, and various blocking films, software, and vision protection monitors were released. In this paper focuses on utilizing IoT technology to protect human organizations from blue light. It presents anti-blue light system which prevents excessive exposure to blue light through Arduino module such as ultrasound, piezo buzzer and blue light measurement module.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.1
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• pp.51-54
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• 2002

Polymer EL devices of glass/ITO/PI/MEH-PPV/Al structure were fabricated using spin coating and the Ionized Cluster Beam deposition technique. PMDA-ODA type thin polyimide films which can be used as a impurity blocking layer of EL device were deposited by ICB. According to our previous results, the packing densities of polyimide films were subject to change and depend on their deposition condition. By inserting a Pl layer with various thickness and packing density, I-V characteristics and life time of the devices were investigated to determine the role of a interlayer. The blocking of impurity diffusion from ITO to luminescent layer were confirmed by XPS.

• 한국컴퓨터산업교육학회:학술대회논문집
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• 2003.11a
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• pp.95-98
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• 2003

Power semiconductors are being currently used as a application of intelligent power inverters to a refrigerator, a washing machine and a vacuum cleaner as well as core parts of industrial system. The rating of semiconductor devices is an important factor in decision on the field of application and the forward blocking voltage is one of factors in decision of the rating. The Power MOS device has a merit of high input impedance, short switching time, and stability in temperature as well known. Power MOS devices are mainly used as switches in the field of power electronics, especially the on-state resistance and breakdown voltage are regarded as the most important parameters. Power MOS devices that enable a small size, a light weight, high-integration and relatively high voltage are required these days. In this paper, we proposed the new lateral power MOS which has forward blocking voltage of 250V and contains trench electrodes and verified manufactural possibility by using TSUPREM-4 that is process simulator.