• Title/Summary/Keyword: light reflectivity

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Physical Properties and Optical Symmetry of Some Bireflecting Ore Mineral Species (이방성(異方性) 자원광물(資源鑛物)의 물성(物性) 및 광학적(光學的) 대칭성(對稱性) 연구(硏究))

  • So, Chil-Sup;Doh, Seong-Jae;Lee, Kyeong-Yong
    • Economic and Environmental Geology
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    • v.18 no.4
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    • pp.343-355
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    • 1985
  • Spectral reflectivity and microhardness were measured quantitatively on polished surfaces of a selection of bireflecting minerals obtained from several well known metallic deposits. Incremental errors are much higher than decremental errors and errors were found to be lowest in the spectral region close to the green wavelength ($544m{\mu}$). The characteristics of the spectral profile are significant in their control of white light color. The covellite and graphite have reflectivity profiles similar in shape for each principal direction, showing noticeable difference in magnitude between the profiles: The spectral reflectivity of covellite parallel to the extraordinary vibration is higher (R$$\simeq_-$$10%) than that parallel to the ordinary vibration and graphite shows opposite feature. Reflectivity of the enargite and famatinite cut parallel to the cleavage plane is always higher (R$$\simeq_-$$5%) than that of the section cut normal. The optical symmetry of 5 bireflecting minerals was determined by noting the variation in reflectivity at $544m{\mu}$. The data indicate that covellite is optically uniaxial positive and graphite is optically uniaxial negative. The Rm values for enargite and famatinite are clearly closer to the minimum value for the mineral ($R_1$) than to the maximum value ($R_2$) : the minerals can be recognized as optically biaxial positive. Enargite and famatinite cut parallel to cleavage have much higher hardness values (HV=> $200kg/mm^2$) than those cut normal to cleavage. Vickers indentations exhibit characteristic features for all the bireflecting mineral species studied. Broad radicle groupings of the mineral species can be made with regard to the reflectivity microhardness numbers.

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Multi-crystalline Silicon Solar Cell with Reactive Ion Etching Texturization

  • Park, Seok Gi;Kang, Min Gu;Lee, Jeong In;Song, Hee-eun;Chang, Hyo Sik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.419-419
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    • 2016
  • High efficiency silicon solar cell requires the textured front surface to reduce reflectance and to improve the light trapping. In case of mono-crystalline silicon solar cell, wet etching with alkaline solution is widespread. However, the alkali texturing methods are ineffective in case of multi-crystalline silicon wafer due to grain boundary of random crystallographic orientation. The acid texturing method is generally used in multi-crystalline silicon wafer to reduce the surface reflectance. However the acid textured solar cell gives low short-circuit current due to high reflectivity while it improves the open-circuit voltage. To reduce the reflectivity of multi-crystalline silicon wafer, double texturing method with combination of acid and reactive ion etching is an attractive technical solution. In this paper, we have studied to optimize RIE experimental condition with change of RF power (100W, 150W, 200W, 250W, 300W). During experiment, the gas ratio of SF6 and O2 was fixed as 30:10.

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Analysis of Driving Characteristics by Putting Voltage of Charged Particle Type Display Device (대전입자형 디스플레이 소자의 충전전압에 따른 구동특성 분석)

  • Kim, Jin-Sun;Kim, Young-Cho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.1
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    • pp.48-52
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    • 2012
  • The charged particle type display device is a kind of the reflectivity type display and shows an image by absorption and reflection of external light source. The charged particle is important factor for driving of the display and quantity of charge per mass of the charged particle determines the driving voltage, contrast ratio, response time, etc. But it is easy for the charged particles to be damaged in the putting process of the display and the damages cause lumping phenomenon of the charged particles. Because the lumping phenomenon makes high driving voltage, low quality of optical properties, short life time, etc, so the charged particles must be filled by stable putting methods. In this paper, we filled the charged particles into the panels by electric fields to improve the electrical and optical characteristics of the display. Also, we analyzed the driving characteristics of the charged particles according to the applied putting voltages.

Phase-change optical media for computer data storage (컴퓨터 정보저장용 상변화형 광기록매체)

  • 김명룡
    • Electrical & Electronic Materials
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    • v.8 no.2
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    • pp.229-236
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    • 1995
  • Multimedia has created a system environment that needs a combination of diverse peripherals, faster I/O, and easier configuration. The sheer volume of data one can expect with multimedia hardware and applications storage systems of higher capacity and faster data transfer rate. Unlike the magneto-optical(MO)disk technology which uses bias magnetic field in writing, both the reading and the writing in the phase change (PC) technology are performed only by laser light. In PC optical media, an active layer is reversibly converted between amorphous state and crystalline state by changing irradiation conditions of focused laser beam. Thus, as compared with MO disk, the PC disk has such great advantages that signals can be reproduced by change of reflectance of laser beams in the same manner as the compact disc. The reflectivity of a phase-change spot can be altered in a single pass under the head only through modulation of laser power. The principles and the current status of phase-change optical recording media combined with possible applications are discussed in the present article.

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Analysis of Driving Characteristics and Memory Effect by Occupation Area Evaluation Method of Charged Particle Type Display Device (대전입자형 디스플레이 소자의 점유면적 평가방법에 의한 구동특성 및 메모리 효과 분석)

  • Kim, Jin-Sun;Kim, Young-Cho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.8
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    • pp.669-673
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    • 2011
  • The charged particle type display is a kind of the reflectivity type display and shows an image by absorption and reflection of external light source, which has keep an image without additional electric power because of bistability. In this paper, we made a device whose cell gap is $56\;{\mu}m$ and also analyzed driving and memory characteristics by applied driving voltages. As a result, we found that the driving voltage and memory effect depend on q/m(charge to mass ratio) of charged particle. In this case of breakdown voltage, the devices showed degradation of reflectivity and memory effect due to irregular movement of overcharged particles. In addition, contrast ratio of the device varies with memory effect. Thus, we consider that device needs uniform q/m for improvement of electric and optical properties and memory effect.

The Study on the Improvement of Antireflection Coating Efficiency According to the Angle of Incidence (입사각에 따른 반사방지막 성능 개선에 관한 연구)

  • Kim, Chang-Bong
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.16 no.6
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    • pp.4131-4136
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    • 2015
  • This paper compares and calculates more precisely the averaged reflectance of antireflection coating with different structure of single and 6 layer assuming the incident angle of light changing from $8^{\circ}$ to $60^{\circ}$ not like normal incidence as usual case. The reflectivity of AR coating of 6 layers with 180 nm thickness having index profile suggested as linear and quintic function and single layer with same thickness having even index are calculated and compared, when the wavelength of incident light ranges from 400 nm to 1200 nm. As the results the AR coating with 6 layers having quintic(linear) function index profile shows the lower reflectance about 11.6 %(14.6 %) than other index profiles, which is approximately 8 % lower reflectance compared with single layer case(about 19.6 %). This results could be applied for the better antireflection coating design applying to optical devices and filters.

Electro-optic Characteristics of the fringe-field Driven-reflective Liquid Crystal Display with One Polarizer (1매의 편광판으로 구성된 반사형 Fringe-field Switching Mode의 전기 광학 특성)

  • 정태봉;박지혁;이종문;김용배;이승희
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.2
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    • pp.131-137
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    • 2003
  • We have performed computer simulation to obtain electro-optic chracteristics of reflective liquid crystal display (LCD) using wide viewing angle LC mode, fringe field switching(FFS). Unlike other reflective LCD modes, in the FFS mode, the LC director in plance so an application to reflective display consisted of polarizer, LC layer and reflector is possible. when an incident light is 550mm, the optimal cell retardation value is 0.1365${\mu}$m and the efficiency of reflectivity is high over 90% with very little wavelength dispersion. Further, we have studied a new reflective display with polarizer, optical compensation film with half plate, LC plus reflector. The display with optimized cell parameters shows high contrast ratio (CR) over 130 with high light efficiency over 90% at normal direction and the CR greater than 5 exists over 60$^{\circ}$ of polar angle in all directions.

Measurement of the group-delay dispersion of optical elements using white-light interferometry (백색광 간섭계를 이용한 광학소자의 군지연분산 측정)

  • Tayyab Imran;Hong, Kyung-Han;Yu, Tae-Jun;Nam, Chang-Hee
    • Proceedings of the Optical Society of Korea Conference
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    • 2003.07a
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    • pp.248-249
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    • 2003
  • The characterization of laser mirrors is important for obtaining proper performance of femtosecond lasers. Characteristics of laser mirrors are usually described in terms of their reflectivity at a certain wavelength. In femtosecond laser applications, however, the dispersion property of the mirror should be considered because the temporal shape of a femtosecond light pulse changes during the reflection at the mirrors. (omitted)

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WDM-PON Based on Wavelength Locked Fabry-Perot LDs

  • Lee, Chang-Hee;Mun, Sil-Gu
    • Journal of the Optical Society of Korea
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    • v.12 no.4
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    • pp.326-336
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    • 2008
  • A WDM-PON has been considered as an ultimate solution for access networks. However, there were many technical and practical issues for commercial deployment. These issues were solved with wavelength locked F-P LD and the WDM-PONs employing this optical source were commercialized. These WDM-PON systems have been deployed in Korea, Europe, and US. We reviewed wavelength locking technology and WDM-PON achievements. When we inject spectrum sliced broadband light into an F-P LD, the multimode output is changed to a quasi single mode. Then, we can use the single mode light for WDM signal transmission. The broad spectral gain of the semiconductor gain medium enables a color-free operation of WDM-PON, i.e., an identical ONT can be used for each user. The wavelength locking properties depend on many parameters, especially alignment of injection wavelength to a lasing mode, passband profile of AWG and front facet reflectivity of F-P LD. However, these dependencies can be reduced by proper design of the laser and the injection bandwidth. Thus, WDM-PON systems have been achieved with color-free operation.

The Reflection Color Light with the Structure of an Antireflection Lenses (렌즈 무반사막 구조에 의한 반사색광의 특성 연구)

  • Kim, Yong-Geun
    • Journal of Korean Ophthalmic Optics Society
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    • v.1 no.1
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    • pp.93-102
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    • 1996
  • The optical system of lens must be designed to tramsmit light over wide wavelength range and to have lower reflectivity in order to obtain higher spectral transmittance. However, the reflection color light appears due to the remain-reflection light in any optical system of lens. The wavelength of the reflection color light can be controlled by the structure of the number of layers, thickness of layer, reflective index, wavelength of incidence, and substrate etc. In the optical systems of the single layer and the double layers, the reflection color light appears in the condition of the anti-reflection of ${\lambda}s/{\lambda}$ = 1.0 by the color mixture of the remain-reflection lights in the ranges of the longer wavelength side and the shorter one of the ${\lambda}s/{\lambda}$ = 1.0, and of the double layers and triple layers, the reflection color light positioned at P1 < ${\lambda}s/{\lambda}$ < P2 appears in the condition of the antireflection of ${\lambda}s/{\lambda}$ = $PI{\ll}1$ and $P2{\gg}1$. In the optical system of the multi-layers, many antireflection points are existed at the various s/ values, and the reflection color light by the color mixture of the remain-reflection lights in the ranges except for the antireflection points.

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