• Nuclear Engineering and Technology
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• v.45 no.2
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• pp.165-178
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• 2013

A comprehensive review on the technical standards about human factors (HF) design and software reliability maintenance for digital instrumentation and control (I&C) and human-machine interface technology (HMIT) in Japanese light water reactor nuclear power plants (NPPs) was given in this paper mainly by introducing the relevant activities at the Japan Electric Association to set up many industrial standards within the traditional framework of nuclear safety regulation in Japan. In Japan, the Fukushima Daiichi accident that occurred on March 11, 2011 has great impact on nuclear regulation and nuclear industries where concerns by the general public about safety have heightened significantly. However for the part of HF design and software reliability maintenance of digital I&C and HMIT for NPP, the author believes that the past practice of Japanese activities with the related technical standards can be successfully inherited in the future, by reinforcing the technical preparedness for the prevention and mitigation against any types of severe accident occurrence.

• Journal of the Korean Chemical Society
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• v.45 no.2
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• pp.156-161
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• 2001

Various oxidation states of Polyaniline(PANI) were chemically synthesized, and characterized by FT-IR, UV-Vis, GPC, TG-DTA, Single layer light emitting diodes(LED) were perpared by spin coating of LEB-PANI solutions which have various oxidation states onto an ITO substrate and subsequent vacuum deposition of aluminum top electrode and then current-voltage characteristics. EL spectrum was investigated It was found that ${\pi}$-${\pi}$* transition were shifled to longer wavelength and molecular excition transition were decreased in the UV-Vis spectra and the intensity of EL and PL were increased as the contents of fully reduced form LEB increased. The turn-on voltage of ITO/LEB/AI structured LED was 5 V. It was found that the white light was emitted only from the phase with reduced epeat unit.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.65-65
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• 2015

In this talk, I will introduce two topics. The first topic is the polymer light emitting diodes (PLEDs) using graphene oxide quantum dots as emissive center. More specifically, the energy transfer mechanism as well as the origin of white electroluminescence in the PLED were investigated. The second topic is the facile synthesis of eco-friendly III-V colloidal quantum dots and their application to light emitting diodes. Polymer (organic) light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nanomaterial without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence (EL) from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions. (Sci Rep., 5, 11032, 2015). New III-V colloidal quantum dots (CQDs) were synthesized using the hot-injection method and the QD-light emitting diodes (QLEDs) using these CQDs as emissive layer were demonstrated for the first time. The band gaps of the III-V CQDs were varied by varying the metal fraction and by particle size control. The X-ray absorption fine structure (XAFS) results show that the crystal states of the III-V CQDs consist of multi-phase states; multi-peak photoluminescence (PL) resulted from these multi-phase states. Inverted structured QLED shows green EL emission and a maximum luminance of ~45 cd/m2. This result shows that III-V CQDs can be a good substitute for conventional cadmium-containing CQDs in various opto-electronic applications, e.g., eco-friendly displays. (Un-published results).

• Journal of Sensor Science and Technology
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• v.6 no.1
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• pp.24-34
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• 1997

In this study, two different types of complementary electrochromic devices using amorphous $WO_{3}$ films as a working electrode, $V_{2}O_{5}$ film and NiO film as counter electrodes respectively were investigated. For the devices using amorphous and crystalline $V_{2}O_{5}$ films of $100{\sim}150nm$ thickness with $ITO/WO_{3}/LiClO_{4}-PC/V_{2}O_{5}/ITO$ structure, an optical modulation of $50{\sim}60%$ were obtained at a potential range of $1{\sim}2V$. It has been shown that transmittance and reflectance of light could be electrically controlled by low applied voltage. For the devices with $ITO/WO_{3}/LiClO_{4}-PC/NiO/ITO$ structure in which NiO film was deposited by a RF reactive sputtering, the optical modulation in visible light region (${\lambda}=550nm$) and in near infrared light region (${\lambda}=850nm$) were 25% and 30%, respectively.

• Proceedings of the Korean Society of Computer Information Conference
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• 2015.01a
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• pp.223-224
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• 2015

본 논문은 보행자가 안전하게 도로 횡단을 도울 수 있도록 교통 제어 신호기를 임시제어 할 수 있는 시스템을 제안하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.439-442
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• 1998

In this paper, organic thin film LED(light emitting diode) having ITO glass/Alq$_3$/Al structure using an Alq$_3$ was fabricated by the vacuum evaporation and the absorbance, wave length, I-V characteristics were investigated, Electroluminescence of green and wavelength of 510[nm] were observed in this device. We observed absorbance form 320[nm] to 430[nm] and knew unstability of Alq$_3$ material as light emitting device.

• Bulletin of the Korean Chemical Society
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• v.18 no.9
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• pp.922-928
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• 1997

The conformational transition of poly(L-proline) (PLP), Form Ⅱ → Form Ⅰ and the intermolecular aggregation of the product, Form Ⅰ, during and after the transition in water-propanol (1:7, 1:9, 1:15.7, and 1:29 v/v) were studied. For the study, the viscosity change and excess light scattering intensity were measured in the course of the transition which was determined by the Form Ⅰ fraction, fI of the sample solution. For the PLP sample of molecular weight Mv=31,000 the experimental results show that the reaction course is roughly divided into three regions: in the first region [fI=0.27 to 0.40 (- [α]D=400 to 330)], the conformational change of Form Ⅱ → Form Ⅰ occurs with decrease of viscosity, in the second region [fI=0.40 to 0.80 (- [α]D=330 to 120)], a partial side-by-side (p-S-S) type aggregation in which Form Ⅰ blocks interact with each other, which induces the increase of viscosity, starts to occur, and in the third region [fI=0.80 to 1.00 (- [α]D=120 to 15)], a side-by-side type (raft like) aggregation of Form Ⅰ or an end-to-end (E-E) type aggregation occurs according to the solvent situation, i.e., in a water-rich medium [water-propanol (1:9 or 1:7 v/v)], the (S-S) type aggregation with a gross decrease in viscosity occurs while in a water-poor medium [water-propanol (1:29 or 1:15.7 v/v), the (E-E) type aggregation with a large increase in viscosity occurs. The (S-S) type aggregation was promoted at high temperatures. Based on the structure of PLP, a reasonable mechanism for the (p-S-S) and (S-S) aggregation which occurs with the transition of Form Ⅱ → Form Ⅰ is considered. The suggested mechanism was also supported by the result of chain length effect of PLP for the aggregation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.50-50
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• 2008

ZnO has been extensively studied for optoelectronic applications such as blue and ultraviolet (UV) light emitters and detectors, because it has a wide band gap (3.37 eV) anda large exciton binding energy of ~60 meV over GaN (~26 meV). However, the fabrication of the light emitting devices using ZnO homojunctions is suffered from the lack of reproducibility of the p-type ZnO with high hall concentration and mobility. Thus, the ZnO-based p-n heterojunction light emitting diode (LED) using p-Si and p-GaN would be expected to exhibit stable device performance compared to the homojunction LED. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducibleavailability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices with low defect density. However, the electroluminescence (EL) of the device using n-ZnO/p-GaN heterojunctions shows the blue and greenish emissions, which are attributed to the emission from the p-GaN and deep-level defects. In this work, the n-ZnO:Ga/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated at different growth temperatures and carrier concentrations in the n-type region. The effects of the growth temperature and carrier concentration on the electrical and emission properties were investigated. The I-V and the EL results showed that the device performance of the heterostructure LEDs, such as turn-on voltage and true ultraviolet emission, developed through the insertion of a thin intrinsic layer between n-ZnO:Ga and p-GaN:Mg. This observation was attributed to a lowering of the energy barriers for the supply of electrons and holes into intrinsic ZnO, and recombination in the intrinsic ZnO with the absence of deep level emission.

• Journal of the Korean Applied Science and Technology
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• v.15 no.3
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• pp.85-90
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• 1998

In this study, organic electroluminescent devices(OELD) with a structure of a glass $substrate/ITO/TPD/Tb(ACAC)_3(Phen-Cl)/Alq_3/Al$ was fabricated by vacuum evaporation method, where Tb complex was known to have green light emitting property. Electroluminescent(EL) and I-V characteristics of this structure were investigated. This triple-layer structure shows the green EL spectrum at the wavelwngth of 546nm, which is almost the same as the PL spectrum of $Pb(ACAC)_3(Phen_Cl)$. It was found in current-voltage(I-V) characteristics of the devices that the operating voltage was about 12V.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.596-596
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• 2012

모듈 상태에서의 태양전지 효율에 영향을 주는 외부 요인으로는 풍력과 눈 등의 하중으로 인한 물리적 스트레스와 자외선을 포함하는 광범위한 파장 대역의 빛의 영향 등이 있다. 따라서 본 연구에서는 태양전지의 야외 노출 시간에 따른 소자의 특성 및 효율 변화를 분석하고자 효율이 17.14%인 결정질 태양전지를 18시간 야외에서 노출 시켜 6시간 간격으로 전기적 특성을 분석해 태양전지의 여러 파라미터 변화를 분석하고자 한다. 본 실험에서는 태양전지의 외부 노출에 의한 소자 특성 및 파미미터 변화를 확인하고자 일정 시간 간격으로 노출 된 solar cell에 대한 Dark I-V, Light I-V 측정을 하였다. DIV 측정을 통해 노출 시간이 증가할수록 동일전압 대비 current가 증가하는 것을 알 수 있었다. 또한 역방향 전압에서는 누설전류가 증가함을 확인하였다. Turn-on 전압 감소와 누설전류 증가, 직렬저항의 변화로 인한 소자의 파라미터 변화를 확인하기 위한 LIV 측정에서는 노출 시간 증가에 따라 단락전류 $0.177(mA/cm^2)$, 개방전압 2.699 (mV), 곡선인자 0.5%가 감소하였으며, 소자의 효율도 0.27% 감소하였다. 이처럼 태양전지의 외부 노출은 소자의 파라미터를 감소시키고 최종적으로 소자의 효율을 저해하는 원인이 됨을 확인하였다.