• 디지털산업정보학회논문지
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• 제12권1호
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• pp.13-26
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• 2016

Service and technology for the future hyper-connected society, which is every information receive through the mobile internet, will be an Internet of Things. Thus, it is mandatory to derive key standardization work item and establish strategy for the global business with the standardization of device and service platform by the application service. In this study, by analyzing the domestic and international market trends, state of technical development, and standardization of technology, we identified the open platform is the stepping stone for achieving the goal which is establishing the virtuous circulation of IoT ecosystem. Also, we defined emphasized key standardization work item for achieving the open platform are network, server, access authentication, billing system, and software platform. After that, we proposed future strategy direction of standardization. This research could be contribute to the IoT service diffusion by realizing IP communication among low power wireless terminals and implementing light-weight standard internet protocol.

• 한국전기전자재료학회논문지
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• 제16권12S호
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• pp.1255-1260
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• 2003

In order to reduce driving power consumption, we propose and fabricate a new structure of asymmetric SOI 1${\times}$2 thermo-optic switch that has a back side silicon trenched structure. Compared to conventional SOI thermo optic switches without heat sink structure, it shows an improvement of switching power reduction from about 4 watt to 1.8 watt without sacrificing cross talk of about 20 ㏈ at the light wavelength of 1.55 $\mu\textrm{m}$. Here we also described the main design consideration and fabrication procedure for the proposed device.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.224-224
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• 2016

Many researchers have been tried to improve the performance of the phosphorescent organic light-emitting diode(PHOLED) by controlling of the dopant profile in the emission layer. In this work, as shown in Fig. 1 insert, a typical red PHOLED device which has the structure of ITO/NPB(50nm)/CBP(30nm)/TPBi(10nm)/Alq3(20nm)/LiF(0.8nm)/Al(100nm) is fabricated with a 5nm thick doping section in the emission layer. The doping section is formed by co-deposition of CBP and Ir(btp)2acac with a doping concentration of 8%, and it's location(x) is changed from HTL/EML interface to EML/HBL in 5nm steps. The current efficiency versus current density of the devices are shown in Fig. 1. By changing the location of doping section, as shown in Fig. 1 and 2, at x=5nm, the efficiency shows the maximum of 3.1 cd/A at 0.5 mA/cm2 and it is slightly decreased when the section is closed to HTL and slightly increased when the section is closed to HBL. If the doping section is closed to HTL(NPB) the excitons can be quenched easily to NPB's triplet state energy level(2.5eV) which is relatively lower than that of CBP(2.6eV). Because there is a hole accumulation at EML/HBL interface the efficiency can be increased slightly when the section is closed to HBL. Even the thickness of the doping section is only 5nm,. the maximum efficiency of 3.1 cd/A with x=5 is closed to that of the homogeneously doped device, 3.3 cd/A, because the diffusion length of the excitons is relatively long. As a result, we confirm that the current efficiency of the PHOLED can be improved by the doping profile optimization such as partially, not homogeneously, doped EML structure.

• 청정기술
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• 제29권4호
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• pp.244-248
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• 2023

최근 많은 정보를 신속하게 전달하기위한 방법으로 디스플레이의 역할은 아주 중요하며 다양한 색을 자연색에 가깝게 재현하기 위한 연구가 진행 중이다. 특히 정확하고 풍부한 색을 표현하기 위한 방법으로 발광 구조에 대한 연구가 진행되고 있다. 기술의 고도화, 디바이스의 소형화로 인해 작지만 높은 시인성과 에너지 소모에서 높은 효율을 가진 디스플레이의 필요성이 지속적으로 증가되고 있는 실정이다. OLED의 효율을 향상시키기 위해서는 운반자 주입의 향상, 전자와 정공이 수적인 균형을 이루며 효율적으로 재결합 할 수 있는 소자의 구조, 발광 효율이 큰 물질의 개발 등 OLED의 효율을 향상시키고자 하는 노력은 다방면에서 진행되고 있다. 본 연구에서는 7층 적층구조 배면발광 청색 OLED 소자의 전기적 특성 및 광학적 특성을 분석하였다. 소자는 제작이 용이하며, 고효율 및 고휘도화가 가능한 Blue 발광물질인 4,4'-Bis(carbazol-9-yl)biphenyl : Ir(difppy)2(pic)를 사용하였다. OLED 소자 제작은 SUNICEL PLUS 200 시스템을 이용하여 5×10-8 Torr 이하의 고진공 상태에서 In-Situ 방식으로 증착하였다. Electron or Hole Injection Layer(EIL or HIL) Electron or Hole Transport Layer(ETL or HTL) 등이 추가된 5층 구조에 Electron or Hole Blocking Layer(EBL or HBL)을 추가한 7층 구조로 실험을 진행하였다. 제작한 소자의 전기적, 광학적 특성을 분석한 결과 EBL 층과 HBL층을 삽입하여 색의 확산을 방지한 소자는 색 순도가 우수하게 나타났다. 본 연구결과를 이용하여 청색 OLED 디스플레이 소자의 연구 개발 기초 및 실용화에 크게 기여할 것으로 기대된다.

• 대한전자공학회논문지SD
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• 제45권9호
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• pp.8-13
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• 2008

균일하게 도핑된 반도체에서, 분포된 확산 잡음원에 의해서 발생하는 단자잡음전류의 전력주파수밀도를 계산하였다. 고정된 전압에서 반도체의 길이가 작아짐에 따라, 또는 주어진 반도체에서 전류레벨이 증가함에 따라, AC 단락잡음전류는 열잡음 뿐만 아니라 과잉잡음을 보인다. 이 과잉잡음은 채널길이가 외인성 Debye 길이에 비해 매우 작은 경우에는 산탄잡음의 스펙트럼과 같은 모습을 보인다. 유한한 주파수에서 속도요동 잡음원에 의한 외인성 반도체에서 발생하는 과잉잡음을 최초로 유도하였다. 유도된 과잉잡음 공식은 반도체 채널의 통과 시간, 유전 이완 시간, 속도 이완 사이의 상호 작용에 따라 단자잡음 전류와 캐리어 농도 요동이 결정됨을 명시적으로 보여준다. 또한 유도된 해석적 식을 사용하여 여러 가지 반도체 샘플 길이와 바이어스, 주파수에 따른 잡음 스펙트럼의 변화도를 계산하였다. 유도된 공식은 quasi-ballistic 수송현상이 중요한 역할을 하는 나노스케일 MOSFET의 잡음 발생 기제를 이해할 수 있는 기반이 된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.163.1-163.1
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• 2016

Lead halide perovskites CH3NH3PbX3 (X=Cl, Br, I) have received great interest in the past few years because of their excellent photoelectronic properties as well as their low-cost solution process. Their theoretical efficiency limit of the solar cell devices was predicted around 31% by a detailed balance model for the reason that exceptional light-harvesting and superior carrier transport properties. Additionally, these excellent properties contribute to the applications of optoelectronic devices such as LASERs, LEDs, and photodetectors. Since these devices are mainly using perovskite thin film, one of the most important factor to decide the efficiency of these applications is the quality of the film. Even though, optoelectrical devices are composed of polycrystalline thin film in general, not a single crystalline form which has longer carrier diffusion length and lower trap density. For these reasons, monodomain perovskite thin films have potential to elicit an optimized device efficiency. In this study, we analyzed the crystallography of the in-plane aligned perovskite thin film by X-ray diffraction (XRD) and selected area electron diffraction (SAED). Also the basic optic properties of perovskites were checked using scanning electron microscopy (SEM) and UV-Vis spectrum. From this work, the perovskite which is aligned in all directions both of out-of-plane and in-plane was fabricated and analyzed.

• 한국정밀공학회지
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• 제22권1호
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• pp.199-206
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• 2005

Mask manufacturing is a high COC and COO process in developing of semiconductor devices because of mask production tool with high resolution. Direct writing has been thought to be the one of the patterning method to cope with development or small-lot production of the device. This study consists two categories. One is the additional process of the direct and maskless patterning generation using SLA for easy and convenient application and the other is a removal process using wet-etching process. In this study, cured status of epoxy pattern is most important parameter because of the beer-lambert law according to the diffusion of UV light. In order to improve the contact force between patterns and substrate, prime process was performed and to remove the semi-cured resin which makes a bad effects to the pattern, spin cleaning process using TPM was also performed. At a removal process, contact force between photo-curable resin as an etching mask and Si wafer is important parameter.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.427-427
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• 2016

Organic-inorganic hybrid perovskite have attracted significant attention as a new revolutionary light absorber for photovoltaic device due to its remarkable characteristics such as long charge diffusion lengths (100-1000nm), low recombination rate, and high extinction coefficient. Recently, power conversion efficiency of perovskite solar cell is above 20% that is approached to crystalline silicon solar cells. Planar heterojunction perovskite solar cells have simple device structure and can be fabricated low temperature process due to absence of mesoporous scaffold that should be annealed over 500 oC. However, in the planar structure, controlling perovskite film qualities such as crystallinity and coverage is important for high performances. Those controlling methods in one-step deposition have been reported such as adding additive, solvent-engineering, using anti-solvent, for pin-hole free perovskite layer to reduce shunting paths connecting between electron transport layer and hole transport layer. Here, we studied the effect of alkali metal halide to control the fabrication process of perovskite film. During the morphology determination step, alkali metal halides can affect film morphologies by intercalating with PbI2 layer and reducing $CH3NH3PbI3{\cdot}DMF$ intermediate phase resulting in needle shape morphology. As types of alkali metal ions, the diverse grain sizes of film were observed due to different crystallization rate depending on the size of alkali metal ions. The pin-hole free perovskite film was obtained with this method, and the resulting perovskite solar cells showed higher performance as > 10% of power conversion efficiency in large size perovskite solar cell as $5{\times}5cm$. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and inductively coupled plasma optical emission spectrometry (ICP-OES) are analyzed to prove the mechanism of perovskite film formation with alkali metal halides.

• 전자공학회논문지
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• 제51권11호
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• pp.221-228
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• 2014

혀의 색상 및 형태는 신체의 생리적이고 임상 병리적인 상태를 반영한다. 최근에는 정량적이고 객관화된 설 진단을 위해 다양한 설 영상 측정 장치가 개발되고 있다. 설 진단의 대부분은 혀의 색상 정보를 활용하기 때문에 설 영상 획득 장치에서 조명환경의 성능은 매우 중요하다. 본 연구에서는 좁은 시스템 내부 구조에서 설 표면에 조명이 고르게 비춰질 수 있도록 간접조명을 고안하였고, 그 성능을 평가하였다. 간접 조명환경 구현을 위해 타원체 형태의 반사 구조를 시스템 내부에 위치시키고, 타원체 내부에 높은 조도의 LED 두 개를 통해 정면 카메라 아래 방향으로 빛을 조사하도록 배치시켰다. 혀 위치 영역에는 반사 구조에 의해 반사된 빛만이 조사될 수 있도록 하였다. 조명의 균질도는 5개 영역에서 밝기를 측정하여 변동계수로 평가하였고, 직접조명과 확산판조명에서 각각 0.16, 0.13으로 나타난 반면 간접조명에서는 0.01미만으로 나타났다. 혀 모형을 통해 조명에 의한 빛 반사 영역의 비율을 계산한 결과는 직접조명, 확산판조명, 간접조명에서 각각 5.76%, 4.22%, 1.79%로 나타났다. 혀 모형을 측정한 영상에서 6영역의 변동계수를 계산해 색상 균질도를 평가한 결과는 간접조명에서 0.06 미만으로 가장 우수한 것으로 나타났다. 본 논문에서 구현한 조명방식을 설진 시스템에 적용하여 진단 지표 측정의 재현성 및 반복성이 향상될 것으로 기대된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.463-463
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• 2014

Dye-sensitized solar cells (DSSCs) have generated a strong interest in the development of solid-state devices owing to their low cost and simple preparation procedures. Effort has been devoted to the study of electrolytes that allow light-to-electrical power conversion for DSSC applications. Several attempts have been made to substitute the liquid electrolyte in the original solar cells by using (2,2',7,7'-tetrakis (N,N-di-p-methoxyphenylamine)-9-9'-spirobi-fluorene (spiro-OMeTAD) that act as hole conductor [1]. Although efficiencies above 3% have been reached by several groups, here the major challenging is limited photoelectrode thickness ($2{\mu}m$), which is very low due to electron diffusion length (Ln) for spiro-OMeTAD ($4.4{\mu}m$) [2]. In principle, the $TiO_2$ layer can be thicker than had been thought previously. This has important implications for the design of high-efficiency solid-state DSSCs. In the present study, we have fabricated 3-D Transparent Conducting Oxide (TCO) by growing tin-doped indium oxide (ITO) nanowire (NWs) arrays via a vapor transport method [3] and mesoporous $TiO_2$ nanoparticle (NP)-based photoelectrodes were prepared using doctor blade method. Finally optimized light-harvesting solid-state DSSCs is made using 3-D TCO where electron life time is controlled the recombination rate through fast charge collection and also ITO NWs length can be controlled in the range of over $2{\mu}m$ and has been characterized using field emission scanning electron microscopy (FE-SEM). Structural analyses by high-resolution transmission electron microscopy (HRTEM) and X-Ray diffraction (XRD) results reveal that the ITO NWs formed single crystal oriented [100] direction. Also to compare the charge collection properties of conventional NPs based solid-state DSSCs with ITO NWs based solid-state DSSCs, we have studied intensity modulated photovoltage spectroscopy (IMVS), intensity modulated photocurrent spectroscopy (IMPS) and transient open circuit voltages. As a result, above $4{\mu}m$ thick ITO NWs based photoelectrodes with Z907 dye shown the best performing device, exhibiting a short-circuit current density of 7.21 mA cm-2 under simulated solar emission of 100 mW cm-2 associated with an overall power conversion efficiency of 2.80 %. Finally, we achieved the efficiency of 7.5% by applying a CH3NH3PbI3 perovskite sensitizer.