• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2004.03a
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• pp.577-587
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• 2004

A coaxial pulsed plasma thruster (PPT) with a Teflon cavity was designed, and its performance characteristics were examined varying stored energy, cavity length and capacitance. The PPT was tested as the entire system including the discharge circuit, and the results were explained with both the transfer efficiency and the acceleration efficiency. The transfer efficiency is defined as the fraction of energy in capacitors supplied into plasma, and the acceleration efficiency as the fraction of energy supplied into plasma converted to thrust energy. To estimate these efficiencies, the equivalent plasma resistance was defined and calculated using energy conservation during discharge. The equivalent plasma resistance proportionally increased with cavity length, and therefore the current peak increased with decreasing cavity length. The energy density calculated by the transfer efficiency was increased with decreasing cavity length. As a result, higher acceleration efficiency and lower transfer efficiency were obtained with shorter cavity length. Accordingly, there was an optimal cavity length for the thrust efficiency. The specific impulse and the impulse bit per unit stored energy ranged from 390 s and 50 $\mu$ Ns/J for a cavity length of 34 mm to 825 s and 11 $\mu$ Ns/J for a cavity length of 4 mm when the stored energy was fixed to 21.4J. Thus, it was showed that the performance of this PPT approached that of electromagnetic-acceleration-type PPT with decreasing cavity length. The PPT achieved thrust efficiencies of 10-12% at 21.4 J and 6-7% at 5.35 J at cavity lengths between 14 mm and 29 mm.

• Journal of the Korean Society of Safety
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• v.6 no.2
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• pp.15-20
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• 1991

In this paper, we have investigated the effect of organic additives and prestressed D C. voltage on the impulse tree initiation in low density polyethylene. The five klnds of organic compounds was selected for the purpose of inhibiting tree initiation and 10 wt % of each additive was mixed in low density polyethylene. The positive or negative impulse voltage was applied after prestressed D.C. voltage was applied in order to investigate the effect of the space charge influenced on tree initiation. The lengths of tree initiation in case of belng same polarity between prestressed D.C. voltage and impulse voltage were longer than those in case of being different polarity between prestressed D.C. voltage and impulse voltage. When the polarity prestressed D.C. voltage was the different plarity of impulse voltage, the length of tree initiation increased with increasing the prestressed D.C. voltage and decreasing the rest time Among the organic additives used in this paper, the m-cresol can be shown to be the most effective inhibiter to tree initiation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.10-12
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• 1996

AlGaAs/GaAs Heterojunotion Bipolar Transistors (HBTs) with various emitter areas were fabricated and the device size dependence on the current gain was examined. With the different emitter areas, the passivated devices having the same peripheral length were fabricated and measured. The measured base current density in the Gummel plots shows an ideality factor of nearly 2. It is found that as the emitter area becomes small, the base current density with the ideality factor of 2 increases linearly, and as the emitter perimeter/area ratio becomes large, the surface recombination current density component increases. The current gain performance in AlGaAs/GaAs HBTs is mainly determined by either the larger emitter area or the smaller ratio of the emitter perimeter to the emitter area. These results will be compared with experimental works for GaInP/GaAs HBTs

• Proceedings of the KIPE Conference
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• 2002.11a
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• pp.205-208
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• 2002

Thermal design is required with considering thermal stability to verify the reliability of electric power device with using IGBT. Numerical analysis is performed to analyzed the change in thermal resistance with respect to the various thermal density of heating element. Correlations between thermal resistance and heat generation density are established. With using these correlations, performance curve is composed with respect to the change in thermal resistance of cooling conditions for natural convection and forced convection. Thermal fatigue is occurred at the Inside and outside of IGBT by repeated heat load. The crack is occurred between base plate and ceramic substrate for the inside. When the crack length is 4mm, the failure is occurred. Therefore, Thermal design method considering thermal density, thermal fatigue resistance is presented on this study and it is expected to thermal design with considering life prediction.

• Journal of the Korean housing association
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• v.16 no.1
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• pp.73-79
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• 2005

The ventilation efficiency of apartment housing bathroom has been measured by the flexible's diameter, length, and installation format to the exhaust In. The gas density attenuation method of Tracer Gas Method has been specifically utilized for this measurement. Full size mock-up of apartment housing bathroom, which was approximately $100 m^2$ in size, has been established for the ventilation emciency measurement. In addition, the ventilation efficiency has been studied by the possibility of air-supply In. The diameters of flexible are 100 mm, 125 mm, and 150mm. It also have the length of 1.0m, and 1.5 m. The installation formats are I shape, L shape, and S shape. As a result of this measurement, the flexible which has the highest ventilation efficiency was the one has bigger diameter, short in length, and I shape installation format.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.8
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• pp.126-132
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• 1995

The electrical stress of short channel polycrystalline silicon (poly-Si) thin film transistor (TFT) has been investigated. The device characteristics of short channel poly-Si TFT with 5$\mu$m channel length has been observed to be significantly degraded such as a large shift in threshold voltage and asymmetric phenomena after the electrical stress. The dominant degradation mechanism in long channel poly-Si TFT's with 10$\mu$m and 20$\mu$m channel length respectively is charage trappling in gate oxide while that in short channel device with 5.mu.m channel length is defect creation in active poly-Si layer. We propose that the increased defect density within depletion region near drain junction due to high electric field which could be evidenced by kink effect, constitutes the important reason for this significant degradation in short channel poly-Si TFT. The proposed model is verified by comparing the amounts of the defect creation and the charge trapping from the strechout voltage.

• ETRI Journal
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• v.17 no.1
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• pp.1-10
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• 1995

We have achieved very low threshold current densities with high light output powers for InGaAs/ GaAs surface-emitting lasers using a periodic gain active structure in which three quantum wells are inserted in two-wavelength-thick (2${\lambda}$ ) cavity. Air-post type devices with a diameter of 20~40${\mu}m$ exhibit a threshold current density of 380~410$A/cm^2$. Output power for a 40${\mu}m$ diameter device reaches over 11 mW. A simple theoretical calculation of the threshold and power performances indicates that the periodic gain structure has an advantage in achieving low threshold current density mainly due to the high coupling efficiency between gain medium and optical field. The deterioration of power, expected from the long cavity length of $2{\lambda}$, is negligible.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.295-298
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• 1999

AlGaAs/InGaAs power P-HEMTS (Pseudo-morphic High Electron Mobility Transistors) with 1.0-${\mu}{\textrm}{m}$ gate length for PCS applications have been fabricated. We adopted single heterojunction P-HEMT structure with two Si-delta doped layer to obtain higher current density. It exhibits a maximum current density of 512㎃/mm, an extrinsic transconductance of 259mS/mm, and a gate to drain breakdown voltage of 12.0V, respectively. The device exhibits a power density of 657㎽/mm, a maximum power added efficiency of 42.1%, a linear power gain of 9.85㏈ respectively at a drain bias of 6.0V, gate bias of 0.6V and an operation frequency of 1.765㎓.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2005.11a
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• pp.79-83
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• 2005

SEA is a useful tool to predict noise and vibration response in high frequency region but has a weak point not to be able to express modal behavior in low frequency region. For a structure with middle subsystem having relatively higher modal density than excited subsystem and receiving subsystem, we studied the possibility that the modal behavior of receiving subsystem can express by considering finite mobility of excited subsystem. For a simply three-coupled beams which is chosen for feasibility study, the response of receiving beam was investigated with varying the length & area moment of inertia of middle beam. In case that the middle beam has relatively higher modal density than exciting beam, the application to finite mobility of excited beam led to express modal behavior of receiving beam relatively well.

• The Journal of the Petrological Society of Korea
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• v.24 no.3
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• pp.165-180
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• 2015

Jurassic granite from Geochang was analysed with respect to the characteristics of the rock cleavage. The phases of distribution of microcracks were well evidenced from the enlarged photomicrographs(${\times}6.7$) of the thin section. In this study, the length - cumulative frequency diagrams were used for expressing the distribution characteristics of microcrack. The diagrams for the six directions were arranged in the magnitude of density(${\rho}$). These diagrams show an order of H2 < H1 < G2 < G1 < R2 < R1 from the related chart. Among six diagrams, the diagram for hardway 2(H2) occupies the lowermost region on the left. On the contrary, the diagram for rift 1(R1) occupies the uppermost region on the right. Curve patterns of the two diagrams change from uniform to exponential distribution type in accordance with the increased density. The overall distribution characteristics of the diagrams were well evidenced from the magnitude of the exponent(${\lambda}$) and length of line oa related to the exponential straight line. The magnitude of exponent governing the values of slope(${\theta}$) is inversely proportional to the values of microcrack parameters such as number(N), length(L) and density. On the contrary, length of line oa is directly proportional to the values of the above three parameters. Above microcrack parameters related to the order of arrangement of diagrams show an order of hardway(H1 + H2) < grain(G1 + G2) < rift(R1 + R2). The distribution characteristics of progressive variation are found among the six diagrams. The order of arrangement of the diagrams indicates a relative magnitude of the rock cleavage. Meanwhile, the parameters such as slope, exponent, density and length of line oa were arranged in an order of H2 < H1 < G2 < G1 < R2 < R1. The variation curves of a smooth quadratic function are shown from the related chart. From the correlation chart between density and the above parameters, a common regularity following power-law correlation function was derived. Finally, the analysis for the rock cleavage was conducted through the combination between the diagram and microcrack parameter. This type of combination contribute to the progressivity in evaluation for the rock cleavage.