• Title/Summary/Keyword: lead zirconate titanate (PZT)

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Fabrication and Electrical Properties of PZT/BFO Multilayer Thin Films

  • Jo, Seo-Hyeon;Nam, Sung-Pil;Lee, Sung-Gap;Lee, Seung-Hwan;Lee, Young-Hie;Kim, Young-Gon
    • Transactions on Electrical and Electronic Materials
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    • v.12 no.5
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    • pp.193-196
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    • 2011
  • Lead zirconate titanate (PZT)/ bismuth ferrite (BFO) multilayer thin films have been fabricated by the spin-coating method on Pt(200 nm)/Ti(10 nm)/$SiO_2$(100 nm)/p-Si(100) substrates using $BiFeO_3$ and $Pb(Zr_{0.52}Ti_{0.48})O_3$ metal alkoxide solutions. The PZT/BFO multilayer thin films show a uniform and void-free grain structure, and the grain size is smaller than that of PZT single films. The reason for this is assumed to be that the lower BFO layers play an important role as a nucleation site or seed layer for the formation of homogeneous and uniform upper PZT layers. The dielectric constant and dielectric losses decreased with increasing number of coatings, and the six-layer PZT/BFO thin film has good properties of 162 (dielectric constant) and 0.017 (dielectric losses) at 1 kHz. The remnant polarization and coercive field of three-layer PZT/BFO thin films were 13.86 ${\mu}C/cm^2$ and 37 kV/cm respectively.

The reduction of etching damage in lead-zirconate-titanate thin films using Inductively Coupled Plasma (Inductively Coupled Plasma를 이용한 lead-zirconate-titanate 박막의 식각 손상 개선)

  • Lim, Kyu-Tae;Kim, Kyoung-Tae;Kim, Dong-Pyo;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.178-181
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    • 2003
  • In this work, we etched PZT films with various additive gases ($O_2$ and Ar) in $Cl_2/CF_4$ plasmas, while mixing ratio was fixed at 8/2. After the etching, the plasma induced damages are characterized in terms of hysteresis curves, leakage current, retention properties, and switching polarization. When the electrical properties of PZT etched in $O_2$ or Ar added $Cl_2/CF_4$ were compared, the value of remanent polarization in $O_2$ added $Cl_2/CF_4$ plasma is higher than that in Ar. added plasma. The maximum etch rate of the PZT thin films was 145 nm/min for 30% Ar added $Cl_2/CF_4$ gas having mixing ratio of 8/2 and 110 nm/min for 10% $O_2$ added to that same gas mixture. In order to recover the ferroelectic properties of the PZT thin films after etching, we annealed the etched PZT thin films at $550^{\circ}C$ in an $O_2$ atmosphere for 10 min. From the hysteresis curves, leakage current, retention property and switching polarization, the reduction of the etching damage and the recovery via the annealing was turned out to be more effective when $O_2$ was added to $Cl_2/CF_4$ than Ar. X-ray diffraction (XRD) showed that the structural damage was lower when $O_2$ was added to $Cl_2/CF_4$. And the improvement in the ferroelectric properties of the annealed samples was consistent with the increased intensities of the (100) and the (200) PZT peaks.

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Effects of Mixing Method on the Preparation of PZT Ceramics and Its Electrical Characterization (Ⅰ) (製造方法에 따른 PZT Ceramics의 生成과 誘電特性에 미치는 影響 (第 1 報))

  • Sang Hee Cho
    • Journal of the Korean Chemical Society
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    • v.24 no.1
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    • pp.53-62
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    • 1980
  • The present work is concerned with the studies on the production of PZT ceramics by newly developed mixing process, which tentatively named "precipitation mixing method", consists of precipitating lead carbontate in the presence of $TiO_2$ and/or $ZrO_2$. Mixtures of $PbCO_3$ and $TiO_2$ or $ZrO_2$ were compared with those obtained by ball-milling with special emphasis on the rate and mechanism of formation of lead titanate and lead zirconate. A possiblity for obtaining PZT ceramics by "precipitation mixing method" was established.

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Development of smart transducer with embedded sensor for automatic process control of ultrasonic wire bonding

  • Or, Siu Wing;Chan, Helen Lai Wa;Liu, Peter Chou Kee
    • Smart Structures and Systems
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    • v.1 no.1
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    • pp.47-61
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    • 2005
  • A ring-shaped lead zirconate titanate (PZT) piezoceramic sensor has been integrated with the Langevin-type piezoceramic driver of an ultrasonic wire-bonding transducer to form a smart transducer for in-situ measurement of three essential bonding parameters: namely, impact force, ultrasonic amplitude and bond time. This sensor has an inner diameter, an outer diameter and a thickness of 12.7 mm, 5.1 mm and 0.6 mm, respectively. It has a specifically designed electrode pattern on the two major surfaces perpendicular to its thickness along which polarization is induced. The process-test results have indicated that the sensor not only is sensitive to excessive impact forces exerted on the devices to be bonded but also can track changes in the ultrasonic amplitude proficiently during bonding. Good correlation between the sensor outputs and the bond quality has been established. This smart transducer has good potential to be used in automatic process-control systems for ultrasonic wire bonding.

Low Temperature Sintering of PZTN by the Liquid Phase Transient Processing (액상천이공정에 의한 PZTN의 저온소결에 관한 연구)

  • Kim, Chan-Yeong
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.50 no.12
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    • pp.593-598
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    • 2001
  • Transient liquid phase processing was investigated to decrease processing temperatures while maintaining useful piezoelectric properties in the lead zirconate titanate (PZT) system. Niobium oxide$(Nb_2O_5)$ modified crystalline PZT (PZTN) powder was combined with lead silicate $(PS; PbO-SiO_2)$ glass powder and crystalline titania, zirconia, and niobia. Firing above the melting temperature of the lead silicate $(PS; Tm \risingdotseq\; 714^{\circk}C)$ resulted in liquid phase densification of the PZTN followed by dissolution of the titania, zirconia, and niobia into the liquid phase, and crystallization of additional PZTN. The addition of crystalline titania, zirconia, and niobia to react with the lead oxide from the lead silicate phase resulted in an increase in the dielectric and Piezoelectric properties.

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Dielectric and Piezoelectric Properties on the Piezoceramics PZT by Molten Salt Synthesis (Flux법에 의해 제조된 압전 세라믹(PZT)의 유전 및 압전특성)

  • Lee, S.H.;Park, J.B.;SaGong, G.
    • Proceedings of the KIEE Conference
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    • 1992.07b
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    • pp.721-723
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    • 1992
  • The electrical resistivity and piezoelectric properties have been studied for Lead Zirconate-Titanate(PZT) with $Nb_2O_5$ dopant, fabricated from conventional mixed-oxide powders and molten salt synthesis. The resistivity and electromechanical coupling factor(Kp) were increased with increasing Nb contents. The reason for increasing of the electrical resistivity below the Curie Temperature(Tc), It is believed that the p-type electrical conduction in PZT is caused by the lead vacancies. The electromechanical coupling factor(Kr) and piezoelectric constant $d_{33}$ were improved by Nb additives. This behavior can be explained as a compensation effect and $Nb^{5+}$ can serve as a donar and contribute electrons to the conduction process. As a result, the optimized $Nb_2O_5$ dopants on the PZT specimens were 0.75 wt%.

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Material and geometric properties of hoop-type PZT interface for damage-sensitive impedance responses in prestressed tendon anchorage

  • Dang, Ngoc-Loi;Pham, Quang-Quang;Kim, Jeong-Tae
    • Structural Monitoring and Maintenance
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    • v.9 no.2
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    • pp.129-155
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    • 2022
  • In this study, parametric analyses on a hoop-type PZT (lead-zirconate-titanate) interface are performed to estimate the effects of the PZT interface's materials and geometries on sensitivities of impedance responses under strand breakage. The paper provides a guideline for installing the PZT interface suitable in tendon anchorages for damage-sensitive impedance signatures. Firstly, the concept of the PZT interface-based impedance monitoring technique in prestressed tendon anchorage is briefly described. A FE (finite element) analysis is conducted on a multi-strands anchorage equipped with a hoop-type PZT interface for analyzing materials and geometric effects. Various material properties, geometric sizes of the interface, and PZT sensor are simulated under two states of prestressing force for acquiring impedance responses. Changes in impedance signals are statistically quantified to analyze the effect of these factors on damage-sensitive impedance monitoring in the tendon anchorage. Finally, experimental analyses are performed to demonstrate the effects of materials and geometrical properties of the PZT interface on damage-sensitive impedance monitoring.

Sol-Gel Template Synthesis and Characterization of PT, PZ and PZT Nanotubes (PT, PZ와 PZT나노튜브의 졸-겔 형판합성과 특성)

  • Jang, Gi Seok;Bernadette A. Hernandez;Ellen R. Fisher;Peter K. Dorhout
    • Journal of the Korean Chemical Society
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    • v.46 no.3
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    • pp.242-251
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    • 2002
  • We report the synthesis and characterization of the perovskite nanotubes made by sol-gel template syn-thesis.Both lead titanate (PbTiO3 : PT), lead zirconate (PbZrO3 : PZ) and lead zirconium titanate (PbZrO3 -PbTiO3 : PZT) solid solution nanotubes were prepared with a chelate sol-gel of titanium isopropoxide (Ti(OPri)4 ), zirconium tet-rabutoxide (Zr(OBu)4 ) and the respective lead acetate (Pb(OAc)2 -3H2O). WhatmanRanodisc membranes, with a 200nm pore size, served as the template. After the removal of the template in the 6M-NaOH, scanning electron microscopy shows that the shapes formed are 200 nm outer diameter tubes with 50mm lengths. Transmission electron microscopy and electron diffraction reveal that the tubes are polycrystalline. The PT nanotubes so far have shown an anomalous transition temperature, 234.4$^{\circ}C$ as measured by DSC with a small particle size, 15.4 nm determined by X-ray analysis with the aid of Scherrer's equation.

Ferroelectirc Properties of Eu-doped PZT Thin Films (Eu 첨가에 따른 PZT 박막의 강유전 특성)

  • 김창일;손영훈;김경태;김동표;이병기
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.7
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    • pp.611-615
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    • 2003
  • Eu-doped lead zirconate titanate(Pb$\sub$1.1/(Zr$\sub$0.6/Ti$\sub$0.4/)O$_3$; PZT) thin films on the Pt/Ti/SiO$_2$/Si substrates prepared by a sol-gel method. The effect on structural and electrical properties of PZT thin films measured according to the Eu content. Eu-doping altered significantly dielectric and ferroelectric properties. The remanent polarization and the coercive field decreased with the increasing Eu content. The dielectric constant and the dielectric loss of PZT thin films decreased with the increasing Eu content. The 0.5 mol% of Eu-doped PZT thin film showed improved fatigue characteristic comparing to the undoped PZT thin film.