• 한국응용과학기술학회지
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• 제29권2호
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• pp.199-204
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• 2012

유기 박막 트랜지스터 (organic thin-film transistors; OTFTs)는 유기 반도체 그리고 디스플레이와 같은 분야에 그들의 잠재적인 응용 가능성 때문에 많은 주목을 받고 있다. 하지만 급격한 산화 혹은 낮은 전기 이동도와 같은 단점으로 인하여 n-형 물질은 p-형 물질에 비해서 상대적으로 많은 연구가 진행되지 못한 실정이다. 따라서 본 논문에서는 n-형 반도체 물질인 [6,6]-phenyl-C61-butyricacidmethylester (PCBM)과 Poly(4-vinylphenol) (PVP)을 유기 절연막으로 이용하여 o-dichlorobenzene, toluene and chloroform과 같은 다양한 유기 용매를 사용한 플라스틱 기판에 유기트랜지스터를 제작하였고 유기 용매가 ODCB 경우 전계 효과 이동도는 약 0.034 $cm^2/Vs$ 그리고 점멸비(on/off ratio)는 ${\sim}1.3{\times}10^5$ 으로 향상 되었다. 다양한 유기 용매의 휘발성에 따라서 PCBM TFT의 전기적 특성에 미치는 영향을 규명하였다.

• 한국세라믹학회지
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• 제39권5호
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• pp.503-510
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• 2002

가압유동층 복합발전용으로 사용 가능한 탄화규소 캔들형 필터를 압출성형법으로 제조하였다. 필터의 기공율을 조절하기 위해 2.5 vol%의 탄소분말을 첨가하였고, 필터의 강도를 부여하기 위해 무기결합제로써 점토와 $CaCO_3$를 첨가하였다. 평균 기공율이 약 40%, 평균 기공크기가 약 $47{\mu}m$인 지지체 위에 평균 기공크기가 약 $10{\mu}m$를 갖도록 탄화규소 분말을 분무 코팅하였고, 이후 대기압 분위기 하에서 1400${\circ}C$의 온도로 소결하였다. 코팅층이 형성된 캔들형 필터를 500${\circ}C$, $5kgf/cm^2$의 고온, 고압 하에서 성능평가를 행한 결과 입자크기별 집진 성능이 모두 99.99% 이상을 나타내었다. 따라서 제조된 탄화규소 캔들형 필터는 가압유동층 연소가스에 포함되어 있는 미세한 먼지를 효과적으로 제거할 수 있을 것으로 판단되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.241-241
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• 2007

We fabricated SmBCO coated conductors(CCs) on IBAD-MgO templates using co-evaporation method. IBAD-MgO templates consist of PLD-LMO/epi-MgO/IBAD-MgO/Ni-alloy and showed good in-plane texture of below FWHM 7 degree. Evaporation rates of Sm, Ba, and Cu were precisely controlled to get the optimum composition ratio after deposition process. To optimize the oxygen partial pressure of reaction region, wide range of the partial pressure was investigated from 1 mTorr to 15 mTorr. By reducing the oxygen partial pressure to 5mTorr, (103)grains in SmBCO layer have been increased. On the other hand, there were only (001)grains in SmBCO layer deposited at 15 mTorr $O_2$. Deposition temperature was also investigated from $600^{\circ}C\;to\;800^{\circ}C$ to make high Ic SmBCO CCs. SmBCO on IBAD MgO template showed that the Ic increased gradually at higher growth temperature to $800^{\circ}C$, which the highest Jc and Ic is $2.6\;MA/cm^2$ and 500 A/cm-w., respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.162-162
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• 2010

InSb has received great attentions as a promising candidate for the active layer of infrared photodetectors due to the well matched band gap for the detection of $3{\sim}5\;{\mu}m$ infrared (IR) wavelength and high electron mobility (106 cm2/Vs at 77 K). In the fabrication of InSb photodetectors, passivation step to suppress dark currents is the key process and intensive studies were conducted to deposit the high quality passivation layers on InSb. Silicon dioxide (SiO2), silicon nitride (Si3N4) and anodic oxide have been investigated as passivation layers and SiO2 is generally used in recent InSb detector fabrication technology due to its better interface properties than other candidates. However, even in SiO2, indium oxide and antimony oxide formation at SiO2/InSb interface has been a critical problem and these oxides prevent the further improvement of interface properties. Also, the mechanisms for the formation of interface phases are still not fully understood. In this study, we report the quantitative analysis of indium and antimony oxide formation at SiO2/InSb interface during plasma enhanced chemical vapor deposition at various growth temperatures and subsequent heat treatments. 30 nm-thick SiO2 layers were deposited on InSb at 120, 160, 200, 240 and $300^{\circ}C$, and analyzed by X-ray photoelectron spectroscopy (XPS). With increasing deposition temperature, contents of indium and antimony oxides were also increased due to the enhanced diffusion. In addition, the sample deposited at $120^{\circ}C$ was annealed at $300^{\circ}C$ for 10 and 30 min and the contents of interfacial oxides were analyzed. Compared to as-grown samples, annealed sample showed lower contents of antimony oxide. This result implies that reduction process of antimony oxide to elemental antimony occurred at the interface more actively than as-grown samples.

• 한국해양공학회지
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• 제25권1호
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• pp.32-38
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• 2011

Galvanized steel has gone through a chemical process to keep it from corroding. The steel gets coated in layers of zinc because rust will not attack this protective metal. For countless outdoor, marine, or industrial applications, galvanized steel is an essential fabrication component. The reduction of the corrosion rate of zinc is an important topic. In the past, a very popular way to reduce the corrosion rate of zinc was to use chemical conversion layers based on $Cr^{+6}$. However, a significant problem that has arisen is that the use of chromium salts is now restricted because of environmental protection legislation. Therefore, it is very important to develop new zinc surface treatments that are environmentally friendly to improve the corrosion resistance of zinc and adhesion with a final organic protective layer. In this study, a Urethane solution (only Urethane 20 wt.%; S-700) and an organic/inorganic solution with Si (Si polysilicate 10 wt.% + Urethane 10 wt.%; LRO-317) are used. Based on the salt spray test of 72 h, S-700 and LRO-317 had a superior effect for the corrosion resistance on EGI and HDGI, respectively.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.200-200
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• 2003

고체산화물 연료전지(SOFC)에서 사용되는 연결재의 주 기능은 각 단위 셀의 연료극과 다음 셀의 공기극을 전기적으로 연결하여, 공기와 사용연료의 분리역할을 하기 위하여 사용된다. SOFC용 연결재는 다른 구성요소 소재보다, 높은 전자 전도성, 낮은 이온전도성, 우수한 기계 적강도가 요구되며, SOFC는 고온에서 작동되기 때문에, 상온에서 작동온도까지 다른 요소 소재들과 유사한 열팽창계수와 물리, 화학적으로 안정성이 요구된다. 현재 연결재 제조기술은 EVD, CVD, plasma spraying, tape casting 등 다양하게 연구되고 있으며, 본 연구는 세라믹 연결재 증착방법 중 저렴한 비용으로 대량 생산이 용이한 습식법(dip coaling)을 적용하여, 연료극 지지체식 flat-tube형 고체산화물 연료전지의 지지체를 위해 세라믹 연결재를 제조하고, 그 특성을 연구하였다. 세라믹 연결재로써 선정한 합성조성은 LaCr $O_3$에 Ca이 치환 고용된 L $a_{0.6}$C $a_{0.41}$Cr $O_3$으로 pechini법으로 합성하였다. 합성된 조성은 100$0^{\circ}C$에서 5시간 하소후 가속 Ball Milling하여 0.5$\mu\textrm{m}$의 평균입자크기를 얻을 수 있었다. XRD 상분석결과 perovskite상 (L $a_{1-x}$ Ca/x/Cr $O_3$)과 CaCr $O_4$를 얻을 수 있었다. slurry를 제조하여 막의 밀착성을 증진시키기 위해 sand blasting시킨 flat tube지지체에 진공펌프를 이용하여 소재내부와 외부의 압력차로 dip coating한 후, 140$0^{\circ}C$로 소결 하였다. coating 결과 박리현상은 없었으나, 표면과 단면의 SEM분석결과 다소 porous한 박막층이 형성되었으며, Ca이온이 지지체로 permeation되는 현상이 발생하였다. 이와 같은 결과로부터 보다 치밀한 박막생성을 위해, slurry 제조조건을 변화시켰으며, Ca이온의 migration을 막기 위해 barrier layer를 이용하였다 완전 소결된 지지체는 가스투과도와 전기전도도측정을 통하여 특성을 평가하였다.였다.다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 추계학술대회 논문집
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• pp.281-284
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• 2007

Recently, we have developed p-i-n a-Si:H single junction thin film solar cells with RF (13.56MHz) plasma enhanced chemical vapor deposition (PECVD) system, and also successfully fabricated the mini modules ($>300cm^2$), using the laser patterning technique to form an integrated series connection. The efficiency of a mini module was 7.4% ($Area=305cm^2$, Isc=0.25A, Voc=14.74V, FF=62%). To fabricate large area modules, it is important to optimise the integrated series connection, without damaging the cell. We have newly installed the laser patterning equipment that consists of two different lasers, $SHG-YVO_4$ (${\lambda}=0.532{\mu}m$) and YAG (${\lambda}=1.064{\mu}m$). The mini-modules are formed through several scribed lines such as pattern-l (front TCO), pattern-2 (PV layers) and pattern-3 (BR/back contact). However, in the case of pattern-3, a high-energy part of laser shot damaged the textured surface of the front TCO, so that the resistance between the each cells decreases due to an incomplete isolation. In this study, the re-deposition of SnOx from the front TCO, Zn (BR layer) and Al (back contact) on the sidewalls of pattern-3 scribed lines was observed. Moreover, re-crystallization of a-Si:H layers due to thermal damage by laser patterning was evaluated. These cause an increase of a leakage current, result in a low efficiency of module. To optimize a-Si:H single junction thin film modules, a laser beam profile was changed, and its effect on isolation of scribed lines is discussed in this paper.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1968-1970
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• 1996

We investigate a surface-micromachined polysilicon microgyroscope, whose resonant frequencies are electrostatically-tunable after fabrication. The microgyroscope with two oscillation nudes has been designed so that the resonant frequency in the sensing mode is higher than that in the actuating mode. The microgyroscope has been fabricated by a 4-mask surface-micrormachining process, including the deep RIE of a $6{\mu}m$-thick LPCVD polycrystalline silicon layer. The resonant frequency in the sensing mode has been lowered to that in actuating mode through the adjustment of an inter-plate bias voltage; thereby achieving a frequency matching at 5.8kHz under the bias voltage of 2V in a reduced pressure of 0.1torr. For an input angular rate of $50^{\circ}/sec$, an output signal of 20mV has been measured from the tuned microgyroscope under an AC drive voltage of 2V with a DC bias voltage of 3V.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.20-20
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• 1998

I Ion beam technology has recently attracted much interest because it has exciting t technological p아:ential for surface analysis, ion beam mixing, surface cleaning and etching i in thin film growth and semiconductor fabrication processes, etc. Es야~cially, ion beam s sputtering has been widely used for sputter depth profiling with x-photoelectron S spectroscopy (XPS) , Auger electron s$\pi$~troscopy(AES), and secondary-ion mass S야i따oscopy(SIMS). However, The problem of surface compositional ch없1ge due to ion b bombardment remains to be understo여 없ld solved. So far sputtering processes have been s studied by s따face an외ysis tools such as XPS, AES, and SIMS which use the sputtering p process again. It would be improbable to measure the modified surface composition profiles a accurately due to ion beam bombardment with surface analysis techniques based on sputter d depth profiling. However, recently Medium energy ion scattering spectroscopy(MEIS) has b been applied to study the sputtering of solid surface at ion bombardment and has been p proved that it has been extremely valuable in probing the surface composition 뻐d s structure nondestructively and quantita디vely with less than 1.0 nm depth resolution. To u understand the sputtering processes of solid surface at ion bombardment, The Molecular D Dynamics(MD) and Monte Carlo(MC) simulation has been used and give an intimate i insight into the sputtering processes of solid surfaces. In this presentation, the sputtering processes of alloys and compound samples at ion b bombardment will be reviewed and the MEIS results for the Ar+ sputter induced altered l layer of the TazOs thin film 뻐dd없nage profiling of Ar+ ion sputt얹"ed Si(100) surface will b be discussed with the results of MD and MC simulation.tion.

• 한국전기전자재료학회논문지
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• 제16권2호
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• pp.102-107
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• 2003

This study puts focus on the optimization of growth temperature of CIGS absorber layer which affects severely the performance of solar cells. The CIGS absorber layers were prepared by three-stage co-evaporation of metal elements in the order of In-Ga-Se. The effect of the growth temperature of 1st stage was found not to be so important, and 350$^{\circ}C$ to be the lowest optimum temperature. In the case of growth temperature at 2nd/3rd stage, the optimum temperature was revealed to be 550$^{\circ}C$. The XRD results of CIGS films showed a strong (112) preferred orientation and the Raman spectra of CIGS films showed only the Al mode peak at 173cm$\^$-1/. Scanning electron microscopy results revealed very small grains at 2nd/3rd stage growth temperature of 480$^{\circ}C$. At higher temperatures, the grain size increased together with a reduction in the number of the voids. The optimization of experimental parameters above mentioned, through the repeated fabrication and characterization of unit layers and devices, led to the highest conversion efficiency of 15.4% from CIGS-based thin film solar cell with a structure of Al/ZnO/CdS/CIGS/Mo/glass.