• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.28.1-28.1
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• 2011

We deposited the carbon films on Ni substrates by thermal atomic layer deposition (th-ALD), for the first time, using carbon tetrabromide ($CBr_4$) precursors and H2 reactants at two different temperatures (573 K and 673 K). Morphology of carbon films was characterized by scanning electron microscopy (SEM). The carbon films having amorphous carbon structures were analyzed by X-ray photoemission spectroscopy (XPS) and Raman spectroscopy. As the working temperature was increased from 573 K to 673 K, the intensity of C1s spectra was increased while that of O1s core spectra was reduced. That is, the purity of carbon films containing bromine (Br) atoms was increased. Also, the thin amorphous carbon films (ALD 3 cycle) were transformed to multilayer graphene segregated on Ni layer, through the post-annealing and cooling process.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.8
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• pp.1566-1571
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• 2009

The discharge electrodes in ac PDP are coated with dielectric layer, and transparent MgO thin films are deposited on the dielectric layer. The main role of the MgO thin films in ac PDP is to protect the dielectric layer from sputtering by ion bombardment in the glow-discharge plasma. An additional important role of the MgO thin film is the high secondary electron emission coefficient which leads the low firing voltage and low cost of the PDP. In this paper, we investigated the relations of the crystal orientation about deposition thickness, deposition rate, temperature of substrate, and distance between the MgO tablet and the substrate. Additionally, we investigated the discharge characteristics of the AC PDP using nano-powder MgO tablet

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.106-106
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• 2014

Atomic layer deposition 방법으로 증착시킨 ZnO 박막은 다양한 종류의 태양전지에서 TCO, Buffer Layer 등 다양한 층에 활용될 수 있어 최근 많은 주목을 받고 있다. 각 적용분야에 필요한 요구조건에 따라 ZnO의 다양한 물리/화학적 특성은 이에 맞도록 조절될 필요가 있으며, 이는 ALD 공정을 통해 ZnO를 증착할 때도 마찬가지이다. 본 발표에서는 ALD를 이용한 ZnO 공정에서 이러한 물리/화학적 특성을 조절하기 위하여 시도되고 있는 precursor/reactant의 선정, 공정조건의 조절, 새로운 precursor의 적용 예를 들고, 특히 전기적 특성에 초점을 맞추어 이들이 증착된 ZnO 박막 특성에 미치는 영향을 조사하였다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.26-29
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• 2006

Transparent ZnO thin films were prepared by KrF pulsed laser deposition (PLD) technique and applied to a bottom-gate type thin film transistor device as an active channel layer. A high conductive crystalline Si substrate was used as an metal-like bottom gate and SiN insulating layer was then deposited by LPCVD(low pressure chemical vapour deposition). An aluminum layer was then vacuum evaporated and patterned to form a source/drain metal contact. Oxygen partial pressure and substrate temperature were varied during the ZnO PLD deposition process and their influence on the thin film properties were investigated by X-ray diffraction(XRD) and Hall-van der Pauw method. Optical transparency of the ZnO thin film was analyzed by UV-visible phometer. The resulting ZnO-TFT devices showed an on-off ration of $10^6$ and field effect mobility of 2.4-6.1 $cm^2/V{\cdot}s$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.75.1-75.1
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• 2013

Atomic layer deposition (ALD) and molecular layer deposition (MLD) are based on sequential, self-limiting surface reactions that produce atomic layer controlled and conformal thin film growth. ALD can deposit inorganic films and MLD can deposit films containing organics. ALD and MLD can be used together to fabricate a wide range of hybrid organic-inorganic alloy films. The relative fraction of inorganic and organic constituents can be defined by controlling the ratio of the ALD and MLD reaction cycles used to grow the film. These hybrid films can be tuned to obtain desirable mechanical, electrical and optical properties. This talk will focus on the growth and properties of metal alkoxide films grown using metal precursors and various organic alcohols that are known as "metalcones". The talk will highlight the tunable mechanical properties of alucone alloys grown using Al2O3 ALD and alucone MLD and the tunable electrical conductivity of zincone alloys grown using ZnO ALD and zincone MLD with DEZ and hydroquinone as the reactants.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.2
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• pp.116-120
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• 1999

Possible role of hydrogen atoms on the formation of microcrystalline silicon films was schematically investigated using a plasma enhanced chemical vapor deposition system. A layer-by-layer technique that can alternate deposition of ${\alpha}$-Si thin film and then exposure of H2 plasma was used for this end. The experimental process was extensively carried out under different hydrogen plasma times (t2) at a fixed number of 20 cycles in the deposition. structural properties, such as crystalline volume fractions and grain shapes were analyzed by using a Raman spectroscopy and a scanning electron microscopy. Electrical transports were characterized by the temperature dependence of the dark conductivity that gives rise to the calculation of activation energy (Ea). Optical absorption was measured using an ultra violet spectrophotometer, resulting in the optical energy gap (Eopt). Our experimental results indicate that both of the hydrogen etching and the structural relaxation effects on the film surface seem to be responsible for the growth mechanism of the crystallites in the ${\mu}$c-si films.

• Journal of Information Display
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• v.8 no.2
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• pp.25-31
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• 2007

MgO thick film for ac-PDPs was formed via electrophoresis deposition process and its effect on luminance and luminance efficiency were evaluated. The electrophoresis deposition process of MgO thick film was optimized through parametric study and defects levels in MgO powders was evaluated using cathodoluminescence spectra measurements. The results demonstrate a possibility of using MgO thick film as electron emission layer for ac-PDPs.

• Journal of the Korean Magnetics Society
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• v.12 no.4
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• pp.132-136
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• 2002

Enhancement of crystallinity and exchange bias characteristics for NiFe/FeMn/NiFe trilayer with Si buffer layer fabricated by ion-beam deposition were examined. A Si buffer layer promoted (111) texture of fcc crystallities in the initial growth region of NiFe layer deposited on it. FeMn layers deposited on Si/NiFe bilayer exhibited excellent (111) crystal texture. The antiferromagnetic FeMn layer between top and bottom NiFe films with the buffer Si 50 ${\AA}$-thick induced a large exchange coupling field Hex with a different dependence. It was found that H$\sub$ex/ of the bottom and top NiFe films with Si buffer layer revealed large value of about 110 Oe and 300 Oe, respectively. In the comparison of two Ta and Si buffer layers, the NiFe/FeMn/NiFe trilayer with Si could possess larger exchange coupling field and higher crystallinity.

• Journal of the Semiconductor & Display Technology
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• v.21 no.1
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• pp.67-70
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• 2022

In order to prevent water vapor and oxygen permeation in the organic light emitting diodes (OLED), Al₂O₃ thin-film encapsulation (TFE) technology were investigated. Atomic layer deposition (ALD) method was used for making the Al₂O₃ TFE layer because it has superior barrier performance with advantages of excellent uniformity over large scales at relatively low deposition temperatures. In this study, the thickness of the Al₂O₃ layer was varied by controlling the numbers of the unit pulse cycle including Tri Methyl Aluminum(Al(CH₃)₃) injection, Ar purge, and H₂O injection. In this case, several process parameters such as injection pulse times, Ar flow rate, precursor temperature, and substrate temperatures were fixed for analysis of the effect only on the thickness of the Al₂O₃ layer. As results, at least the thickness of 39 nm was required in order to obtain the minimum WVTR of 9.04 mg/m²day per one Al₂O₃ layer and a good transmittance of 90.94 % at 550 nm wavelength.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.05a
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• pp.791-792
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• 2012