• Journal of IKEEE
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• v.2 no.1 s.2
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• pp.101-107
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• 1998

This paper is studied micro-defect characteristics by phosphorus 1MeV ion implantation and Rs, SRP, SIMS, XTEM for the RTA process was measured and simulated. As the dose is higher, the Rs is lower. When the dose are $1{\times}10^{13}/cm^2,\;5{\times}10^{13}/cm^2,\;1{\times}10^{14}/cm^2$, the Rp are $1.15{\mu}m,\;1.15{\mu},\;1.10{\mu}m$ respectively. As the RTA time is longer, the maximum concentration position is deeper from the surface and the concentration is lower. Before the RTA was done, we didn't observe any defect. But after the RTA process was done, we could observe the RTA process changed the micro-defects into the secondary defects. The simulation using the buried layer and connecting layer structure was performed. As results, the connecting layer had more effect than the buried layer to latch-up immune. Trigger current was more $0.6mA/{\mu}m$ and trigger voltage was 6V at dose $1{\times}10^{14}/cm^2$ and the energy 500KeV of connecting layer Lower connecting layer dose, latch-up immune characteristics was better.

• Korean Journal of Materials Research
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• v.8 no.10
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• pp.925-930
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• 1998

EPMA and XPS on $Bi_2Sr_2-\chi_LCa_1+\chi_LCu_2O_{8+d}$($\chi_L$ = 0.01, 0.2, 0.3, 0.4, 0.5, 0.6) films by LPE method were performed in order to investigate Sr and Ca distributions in SrO- and Ca-layers. It is found that $T_C^{zero}$ carrier concentration and lattice parameter c monotonically decreases with increasing $\chi_L$. Sr and Ca contents in Ca-layer change in proportion to that in melt. On the other hand, in SrO-layer, Ca content strongly depends on Sr content in that layer and not on Ca content in melt. Since deficiency in SrO-layer increases and $T_C^{zero}$ creases with $\chi_L$,t is found that the deficiencies of Sr and Ca atoms in the SrO-layer has a influence on reducing $T_C^{zero}$.

• Journal of Korean Society of Forest Science
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• v.103 no.1
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• pp.1-11
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• 2014

This study was conducted to investigate the changes understory vegetation composition (shrub and herb layers) in Mt. Gyebang as a northern-temperate deciduous broadleaf forest. Tracheophytes were 146 taxa, consisting 56 families, 93 genera, 124 species, 17 varieties, 3 forma, 2 sub-species and 1 unknown taxa in research subject area. As species area curve analysis, herbaceous layer and shrub species have been decreased over time. As a result of Mantel-test, basal area of upper layer affects to understory vegetation change (p<0.0001). Mean importance value was dominated Lindera obtusiloba (21.585%), Rhododendron schlippenbachii (19.774%) in the shrub layer, identified Sasa borealis (14.082%) and Lindera obtusiloba (7.921%) in the herb layer. According to NMS analysis of shrub layer, Species characterized by strong correlation have been reduced as time goes by. And it reports different species as an increasing in basal area of the upper layer. Herb layer plots of the NMS analysis, Rhododendron schlippenbachii and Rhododendron mucronulatum consistently were affected in shrub layer. In consequence of MRPP-test for changes in vegetation composition, It was analyzed that there are no significant differences for vegetation composition changes on shrub layer in 5-10 years. As a changes of vegetation composition on herb layer were analyzed significantly, composition change of herb layer species was larger than shrub layer species in understory vegetation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.6
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• pp.282-288
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• 2017

In this paper, GaAs/AlGaAs multi-layer structure was grown by liquid phase epitaxy with graphite sliding boat, which can be used as a device structure of a photocathode image sensor. The multi-layer structure was grown on an n-type GaAs substrate in the sequence as follows: GaAs buffer layer, Zn-doped p-type AlGaAs layer as etching stop layer, Zn-doped p-type GaAs layer, and Zn-doped p-type AlGaAs layer. The Characteristics of GaAs/AlGaAs structures were analyzed by using scanning electron microscope (SEM), secondary ion mass spectrometer (SIMS) and hall measurement. The SEM images shows that the p-AlGaAs/p-GaAs/p-AlGaAs multi-layer structure was grown with a mirror-like surface on a whole ($1.25mm{\times}25mm$) substrate. The Al composition in the AlGaAs layer was approximately 80 %. Also, it was confirmed that the free carrier concentration in the p-GaAs layer can be adjusted to the range of $8{\times}10^{18}/cm^2$ by hall measurement. In the result, it is expected that the p-AlGaAs/p-GaAs/p-AlGaAs multi-layer structure grown by the LPE can be used as a device structure of a photoelectric cathode image sensor.

• Journal of Korean Society of Forest Science
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• v.95 no.3
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• pp.328-333
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• 2006

This study was conducted to find the characteristics of photosynthesis, leaf and fruit by crown layers in Rubus coreanus Miq. Light compensation points were shown PPFD 33, 20 and $5{\mu}mol\;m^{-2}\;S^{-1}$ at upper, middle and lower layer, respectively. Light saturation points were appeared PPFD 1000, 500 and 200 and their net photosynthesis rate were 8.52, 5.25 and $3.60{\mu}mol\;CO_2\;m^{-2}S^{-1}$ at upper, middle and lower layer, respectively. Uiryeong 7 which was viny type showed higher net photosynthetic rate than others at upper layer. Songgye 6 which was upright type showed lower net photosynthetic rate than others at lower layer. Chlorophyll contents of middle layer had the highest value in the all layers and upper layer showed the lowest value. Most characteristics of leaf morphology were showed that middle and lower layer had higher value than upper layer. That trend was contrary to characteristics of photosynthesis by crown layers. However, dry weight per leaf area and most characteristics of fruit had the highest value at upper layer and that was similar to characteristics of photosynthesis by crown layers. Also, sugar contents of fruit showed the highest value at middle layer.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.29 no.6
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• pp.326-334
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• 2017

We obtain height of waves overtopping on a porous breakwater using both the one-layer and two-layer Boussinesq equations. The one-layer Boussinesq equations of Lee et al. (2014) are used and the two-layer Boussinesq equations are derived following Cruz et al. (1997). For solitary waves overtopping on a porous breakwater, we find through numerical experiments that the height of waves overtopping on a low-crested breakwater (obtained by the Navier-Stokes equations) are smaller than the height of waves passing through a high-crest breakwater (obtained by the one-layer Boussinesq equations) and larger than the height of waves passing through a submerged breakwater (obtained by the two-layer Boussinesq equations). As the wave nonlinearity becomes smaller or the porous breakwater width becomes narrower, the heights of transmitting waves obtained by the one-layer and two-layer Boussinesq equations become closer to the height of overtopping waves obtained by the Navier-Stokes equations.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.139-143
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• 2017

N-type crystalline silicon solar cells have high metal impurity tolerance and higher minority carrier lifetime that increases conversion efficiency. However, junction quality between the boron diffused layer and the n-type substrate is more important for increased efficiency. In this paper, the current status and prospects for boron diffused layers in N-type crystalline silicon solar cell applications are described. Boron diffused layer formation methods (thermal diffusion and co-diffusion using $a-SiO_X:B$), boron rich layer (BRL) and boron silicate glass (BSG) reactions, and analysis of the effects to improve junction characteristics are discussed. In-situ oxidation is performed to remove the boron rich layer. The oxidation process after diffusion shows a lower B-O peak than before the Oxidation process was changed into $SiO_2$ phase by FTIR and BRL. The $a-SiO_X:B$ layer is deposited by PECVD using $SiH_4$, $B_2H_6$, $H_2$, $CO_2$ gases in N-type wafer and annealed by thermal tube furnace for performing the P+ layer. MCLT (minority carrier lifetime) is improved by increasing $SiH_4$ and $B_2H_6$. When $a-SiO_X:B$ is removed, the Si-O peak decreases and the B-H peak declines a little, but MCLT is improved by hydrogen passivated inactive boron atoms. In this paper, we focused on the boron emitter for N-type crystalline solar cells.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.45-49
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• 2014

In this study, we grew non-polar ZnO nanostructure on (1-102) R-plane sapphire substrates. As for growth method of ZnO, we used hydrothermal synthesis which is known to have the advantages of low cost and easy process. For growth of non-polar, the deposited AZO seed buffer layer with of 80 nm on R-plane sapphire by radio frequency magnetron sputter was annealed by RTA(rapid thermal annealing) in the argon atmosphere. After that, we grew ZnO nanostructure on AZO seed layer by the added hexamethylenetramine (HMT) solution and sodium citrate at $90^{\circ}C$. With two types of additives into solution, we investigated the structures and shapes of ZnO nanorods. Also, we investigate the possibility of formation of 2D non-polar ZnO layer by changing the ratio of two additives. As a result, we could get the non-polar A-plane ZnO layer with well optimized additives' concentrations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.59-62
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• 1996

Plasma displays (PDP) as a large area wall-hanging display device are rabidly developed with flat CRT, TPT LCD and etc. Especially, AC Plasma Display Panels(AC PDPs) have the inherent memory function which is effective for large area displays. The memory function in AC PDPs is caused by the accumulation of the electrical charge on the protecting layer formed on the dielectric layer. This MgO protective layer prevents the dielectric layer from sputtering by ion in discharge plasma and also has the additional important roll in lowering the firing voltage due to the large secondary electron emission coefficient). Until now, the MgO Protective layer is mainly formed by E-Beam evaporation. With increasing the panel size, this process is difficult to attain cost reduction, and are not suitable for large quantity of production. To the contrary, the methode of shuttering are easy to apply on mass production and to enlarge the size of the panel and shows the superior adhesion and uniformity of thin film. In this study, we have prepared MgO protective layer on AC PDP Cell by reactive magnetron sputtering and studied the effect of MgO layer on the surface discharge characteristics of ac PDP.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.40-48
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• 1995

$TiB_2$-TiN double-layer coating have been prepared by ion beam enhanced deposition. AES, XRD, TEM and HRTEM were employed to characterize the $TiB_2$ layer. The microhardness of the coatings was evaluated by an ultra low-load microhardness indenter system, and the tribological behavior was examined by a ball-on-disc tribology wear tester. It was found that in a single titanium diboride layer, the composition is uniform along the depth of the film, and it is mainly composed of nanocrystalline $TiB_2$ with hexagonal structure, which resulted from the ion bombardment during the film growth. The hardness of the $TiB_2$ films increases with increasing ion energy, and approaches a maximum value of the $TiB_2$ films increases with increasing ion energy, and approaches a maximum value of 39 Gpa at ion energy of 85 keV. The tribological property of the TiB2 films is also improved by higher energy of 85keV. The tribological property of the $TiB_2$ films is also improved by higher energy ion beam bombardment. There is no major disparity in the mechanical properties of double-layer $TiB_2$/TiN coatings and TiN/$TiB_2$ coatings. Both show an improved wear resistance compared with single-layer $TiB_2$ films. The adhesion of double-layer coatings is also superior to that of single-layer films.