• Journal of Technologic Dentistry
• /
• v.31 no.3
• /
• pp.15-20
• /
• 2009

The success of the porcelain fused to gold alloy restoration depends not only on the choice of materials but to a larger degree on the technical skills. The porcelain fused to metal(PFM) alloys containing gold are commonly use for dental purposes in dental laboratory. The gold-colored alloys contain primarily gold, platinum, palladium, and silver, with minimum amounts of such metals as tin, iridium, or titanium. The purpose of this study is on the metal-porcelain fusing layer in porcelain fused to high gold alloy Principal results are as follows. The hardness number(Hv) of PFG is respectively $140.2{\pm}12.6$ in as-casted, $164.3{\pm}14.3$ in heat-treated, $186.6{\pm}20.4$ in fired-treated. The formation of the fusing(intermediate) layer caused by components fusing the interface of porcelain and gold alloy. The main components of the fusing(intermediate) layer are Na, Al, Si, K, Zn, Zr and Ce. The intermediate layer formed by the 2nd firing is more larger than the intermediate layer formed by the 1st firing.

• Progress in Superconductivity and Cryogenics
• /
• v.5 no.2
• /
• pp.41-45
• /
• 2003

Resistance distribution in thin film type SFCL elements of different shunt layer thickness was investigated. The 300 nm thick film of 2 inch diameter was coated with a gold layer and patterned into 2 mm wide meander lines. The shunt layer thickness was varied by ion milling the shunt layer with Ar ions, and also by having the shunt layer grown in different thickness. The SFCL element was subjected to simulated AC fault current for measurements. It was immersed in liquid nitrogenduring the experiment. The resistance distribution was not affected by the shunt layer thickness at applied voltages that brought the temperature of the elements to similar values. This result could be explained with the concept of heat transfer from the film to the surroundings. The resistance distribution was independent of the shunt layer thickness because thick sapphire substrates of high thermal conductivity dominated the thermal conductance of the elements.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.326-329
• /
• 2002

In this paper, we investigated a feasibility of cerium oxide(CeO$_2$) films as a buffer layer of MFIS(metal ferroelectric insulator semiconductor) type capacitor. CeO$_2$ layer were Prepared by two step process of a low temperature film growth and subsequent RTA (rapid thermal annealing) treatment. By app1ying an ultra thin Ce metal seed layer and N$_2$ Plasma treatment, dielectric and interface properties were improved. It means that unwanted SiO$_2$ layer generation was successfully suppressed at the interface between He buffer layer and Si substrate. The lowest lattice mismatch of CeO$_2$ film was as low as 1.76% and average surface roughness was less than 0.7 m. The Al/CeO$_2$/Si structure shows breakdown electric field of 1.2 MV/cm, dielectric constant of more than 15.1 and interface state densities as low as 1.84${\times}$10$\^$11/ cm$\^$-1/eV$\^$-1/. After N$_2$ plasma treatment, the leakage current was reduced with about 2-order.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.10
• /
• pp.896-901
• /
• 2002

The polarization and strain behavior of multilayer ceramic actuators fabricated by tape casting using a PNN-PZT ceramics were investigated in association with electrode size and internal layer number. Spontaneous polarization and strain decreased with increasing electrode size. In addition, the increase of internal layer number brought reduced spontaneous polarization and increased the field-induced strain. Because the actuators structure is designed to stack ceramic layer and electrode layer alternatively, the ceramic-electrode interfaces may act as a resistance to motion of domain wall. To analyze the effect of ceramic-electrode interface, the diffraction intensity ratio of (002) to (200) planes was calculated from X-ray diffraction patterns of samples subjected to a voltage of 200 V. The diffraction intensity ratio of (002) to (200) planes was decreased with increasing electrode size and internal layer number. The diffraction intensity ratio and straining behavior analyses indicate that the Polarization and strain were affected by the amount of 90°domain decreasing with increasing electrode size and internal layer number. Consequently, the change of polarization and displacement with respect to electrode size and layer number is likely to be caused by readiness of the domain wall movement around the interface.

• Animal cells and systems
• /
• v.2 no.4
• /
• pp.501-506
• /
• 1998

In the goby Micropercops swinhonis, the development of its egg's enveloping layers could be divided into 4 stages. In the earliest developmental period, stage I, there is a simple oocyte surrounded by a layer of squamous follicular cells. Stage II corresponds to the yolk vesicle stage of vitellogenesis. Here the initial follicular layer has become bilaminar with the retention of its outer squamous cell layer and the acquisition of an inner cuboidal cell layer just over the zona radiata. The number and size of the cuboidal cells increases throughout this stage. Stage III corresponds to the yolk granule stage of true vitellogenesis. Here the cuboidal cells begin to be replaced by columnar cells. As the oocyte grows, the columnar cells increase in size. The columnar cells produce cytoplasmic neutral mucins and by the end of this stage their cytoplasm has been filled with this mucin. In stage IV a single layer of squamous cells still remained as the outer follicular layer of the oocyte. The secretory activity of the inner follicular layers' columnar cells has ceased and they had lost their cell wall integrity and ended as a series of bullet-shaped, neutral mucin deposits.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.628-631
• /
• 2002

$Al_2O_3$ capping layer and MgO protective layer were deposited by electron beam evaporation method using single crystal source. Thickness of the capping layer, $Al_2O_3$, was varied from 5 nm to 10 nm. Surface morphology was observed by SEM and AFM before and after hydration. And microstructure of deposited $Al_2O_3$ layer and chemical shift of electron binding energy were also observed by high resolution TEM and XPS, respectively, after hydration. From these results, it was found that Mg atoms diffused into $Al_2O_3$ layer, reacted with moisture and formed $Mg(OH)_2$ during hydration. As thickness of $Al_2O_3$ increased, extent of hydration increased. $Al_2O_3$ capped MgO thin films and uncapped MgO thin films were deposited on AC-PDP test panel to characterize discharge properties. Although $Al_2O_3$ has poor discharge properties rather than MgO, because of many hydrated species on the surface of MgO, similar discharge properties were observed.

• Transactions of the Korean Society for Noise and Vibration Engineering
• /
• v.18 no.2
• /
• pp.185-191
• /
• 2008

Optimal damping layout of the constrained viscoelastic damping layer on beam is identified with temperatures by using a gradient-based numerical search algorithm. An optimal design problem is defined in order to determine the constrained damping layer configuration. A finite element formulation is introduced to model the constrained layer damping beam. The four-parameter fractional derivative model and the Arrhenius shift factor are used to describe dynamic characteristics of viscoelastic material with respect to frequency and temperature. Frequency-dependent complex-valued eigenvalue problems are solved by using a simple re-substitution algorithm in order to obtain the loss factor of each mode and responses of the structure. The results of the numerical example show that the proposed method can reduce frequency responses of beam at peaks only by reconfiguring the layout of constrained damping layer within a limited weight constraint.

• 한국신재생에너지학회:학술대회논문집
• /
• 2011.11a
• /
• pp.84.1-84.1
• /
• 2011

Typical solid oxide fuel cells (SOFCs) have limited applications because they operate at high temperature due to low ionic conductivity of electrolyte. Thin film solid oxide fuel cell with yttria stabilized zirconia (YSZ) electrolyte is developed to decrease operating temperature. Pt/YSZ/Pt thin film SOFC was fabricated on anodic aluminum oxide (AAO). The crystalline structure of YSZ electrolyte by sputter is heavily depends on the roughness of porous Pt layer, which results in pinholes. To deposit YSZ electrolyte without pinholes and electrical shortage, it is necessary to deposit smoother and denser layer between Pt anode layer and YSZ layer by sputter. Atomic Layer Deposition (ALD) technique is used to deposit pre-YSZ layer, and it improved electrolyte quality. 300nm thick Bi-layered YSZ electrolyte was successfully deposited without electrical shortage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.8
• /
• pp.505-509
• /
• 2016

We have investigated the characteristics of amorphous silicon (a-Si) thin-film solar cell by inserting barrier layer. The conversion efficiency of a-Si thin-film solar cells on graphite substrate shows nearly zero because of the surface roughness of the graphite substrate. To enhance the performance of solar cells, the surface morphology of the back side were modified by changing the barrier layer on graphite. The surface roughness of graphite substrate with the barrier layer grown by plasma enhanced chemical vapor deposition (PECVD) reduced from ~2 um to ~75 nm. In this study, the combination of the barrier layer on graphite substrate is important to increase solar cell efficiency. We achieved ~ 7.8% cell efficiency for an a-Si thin-film solar cell on graphite substrate with SiNx/SiOx stack barrier layer.

• Journal of the Korean institute of surface engineering
• /
• v.40 no.6
• /
• pp.250-253
• /
• 2007

Plasma nitrocarburizing and plasma oxidizing treatments were performed to improve the wear and corrosion resistance of SKD 11 steel. Plasma nitrocarburizing was conducted for 12 h at $520^{\circ}C$ in the nitrogen, hydrogen and methane atmosphere to produce the $\varepsilon-Fe_{2-3}(N,C)$ phase. It was found that the compound layer produced by plasma nitrocarburising was predominantly composed of $\varepsilon-phase$, with a small proportion of $\gamma'-Fe_4(N,C)$ phase. The thickness of the compound layer was about $5{\mu}m$ and the diffusion layer was about $150{\mu}m$ in thickness, respectively. Plasma post oxidation was performed on the nitrocarburized samples with various oxygen/hydrogen ratio at constant temperature of $500^{\circ}C$ for 1 hour. The very thin magnetite($Fe_3O_4$) layer $1-2{\mu}m$ in thickness on top of the compound layer was obtained by plasma post oxidation. It was confirmed that the corrosion characteristics of the nitrocarburized compound layer could be further improved by the application of the superficial magnetite layer.