• Korean Journal of Fisheries and Aquatic Sciences
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• v.46 no.2
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• pp.201-215
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• 2013

The characteristics of the oceanographic environment in the Aleutian Basin of the Bering Sea during spring in 1996, 1997, and 1999 were clarified. An investigation of the water properties revealed five basic layers in the Bering Sea during spring: (1) a surface layer of warm and low-salinity water induced by solar heating, (2) a subsurface layer of cold and low-salinity water propagated slowly by heat from the surface layer, (3) a thermocline layer where salinity was constant but temperature sharply decreased, (4) a temperature inversion layer, and (5) a deep layer with a gradual decrease in temperature and increase in salinity toward the bottom. The ranges of water temperature and salinity were $1.8-5.5^{\circ}C$ and 31.81-34.08 in 1996, $1.5-7.2^{\circ}C$ and 31.9-34.06 in 1997, and $0.5-5.6^{\circ}C$ and 32.0-34.11 in 1999, respectively. The water temperature of the surface layer was approximately $1.6^{\circ}C$ higher in 1997 than in 1996 and 1999. The lowest temperature at a depth of 100-150 m was about $1^{\circ}C$ lower in 1999 than in 1996 and 1997. Nutrient levels (nitrate, phosphate, and silicate) contributing to the control of the growth of phytoplankton were higher in the Aleutian Basin than in the eastern continental shelf and Bogoslof Island area. This was closely associated with the phytoplankton distribution. Nutrient concentrations were lowest at a depth of 25 m. The high primary production at that depth was confirmed from the vertical distribution of chlorophyll a. Chlorophyll a levels were above $4.0{\mu}L^{-1}$ in some areas in 1996 and 1999, but below $2.0{\mu}L^{-1}$ in most areas in 1997. Zooplankton density was about three times higher in 1999 than in 1997.

• Journal of Broadcast Engineering
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• v.13 no.4
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• pp.452-462
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• 2008

In this paper, we address issues associated with the real-time implementation of the MPEG-1/2 Layer-II (or MUSICAM) and MPEG-4 ER-BSAC decoders for Digital Multimedia Broadcasting (DMB) on TMS320C64x+ that is a fixed-point DSP processor with a clock speed of 330 MHz. To achieve the real-time requirement, they should be optimized in different steps as follows. First of all, a C-code level optimization is performed by sharing the memory, adjusting data types, and unrolling loops. Next, an algorithm level optimization is carried out such as the reconfiguration of bitstream reading, the modification of synthesis filtering, and the rearrangement of the window coefficients for synthesis filtering. In addition, the C-code of a synthesis filtering module of the MPEG-1/2 Layer-II decoder is rewritten by using the linear assembly programming technique. This is because the synthesis filtering module requires the most processing time among all processing modules of the decoder. In order to show how the real-time implementation works, we obtain the percentage of the processing time for decoding and calculate a RMS value between the decoded audio signals by the reference MPEG decoder and its DSP version implemented in this paper. As a result, it is shown that the percentages of the processing time for the MPEG-1/2 Layer-II and MPEG-4 ER-BSAC decoders occupy less than 3% and 11% of the DSP clock cycles, respectively, and the RMS values of the MPEG-1/2 Layer-II and MPEG-4 ER-BSAC decoders implemented in this paper all satisfy the criterion of -77.01 dB which is defined by the MPEG standards.

• Journal of the Korean Ceramic Society
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• v.27 no.1
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• pp.79-85
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• 1990

A study on the oxidation of SiO2 sensing layer was done at 950, 1000, 105$0^{\circ}C$ under dry O2 atmosphere. The rate determining step around the oxide layer thickness, 1000$\AA$ was different with the oxidation temperature, as follows ; ⅰ) linear growth at 95$0^{\circ}C$ and ⅱ) parabolic growth at 100$0^{\circ}C$ and 105$0^{\circ}C$. The flatness of SiO2 film was observed within $\pm$1% and surface state charge density was reduced by annealing in N2 atmosphere. Finally, pH sensitivity of SiO2 film, in the range of pH 3-9, was 20mV/pH.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.318-318
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• 2012

A graphene layer is most important materials in resent year to enhance the electrical properties of semiconductor device due to high mobility, flexibility, strong mechanical resistance and transparency[1,2]. The resistance switching memory with the graphene layer have been reported for next generation nonvolatile memory device[3,4]. Also, the graphene layer is able to improve the electrical properties of memory device because of the high mobility and current density. In this study, the resistance switching memory device with metal-oxide nano-particles embedded in polyimide layer on the graphene mono-layer were fabricated. At first, the graphene layer was deposited $SiO_2$/Si substrate by using chemical vapor deposition. Then, a biphenyl-tetracarboxylic dianhydride-phenylene diamine poly-amic-acid was spin coated on the deposited metal layer on the graphene mono-layer. Then the samples were cured at $400^{\circ}C$ for 1 hour in $N_2$ atmosphere after drying at $135^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was done by a thermal evaporator. The electrical properties of device were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. We will discuss the switching mechanism of memory device with metal-oxide nano-particles on the graphene mono-layer.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.627-630
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• 2002

Bi$_2$Sr$_2$CuOx(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion bean sputtering method. 10 wt% and 90 wt% ozone mired with oxygen were used with ultraviolet light irradiation to assist oxidation. XRD and RHEED investigations revealed that a buffer layer is formed at the early stage of deposition (less than 10 unit cell), and then c-axis oriented Bi-2201 grows on top of it.

• Journal of the Korean Society for Heat Treatment
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• v.12 no.1
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• pp.9-20
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• 1999

The effect of post oxidation, water-quenched after holding in air for 5~420 seconds or cooling or furnace cooling, on corrosion resistance and phase formation characteristics of the surface layer of SM20C and SM45C carbon steels after gas nirtrocarbursing in the $NH_3-5%CO_2-N_2$ gas atmosphere at $580^{\circ}C$ for 3hours is studied. The compound layers of two steels consist of ${\varepsilon}-Fe_{2-3}N$, ${\gamma}^{\prime}-Fe_4N$ and $Fe_3O_4$, phases, however, the quantity of ${\gamma}^{\prime}-Fe_4N$ phase increases for the furnace cooled specimen compared to that of air cooling specimen. With increasing $NH_3$ content in the gas mixture and also increasing the keeping time in the air after gas nitrocarburising, the ${\varepsilon}-Fe_{2-3}N$ phase of compound layer increases, while the decreased current density recognizing the improvement of corrosion resistance are shown. the passive current density of SM45C steel is lower than that of SM20C steel at the same nitrocarburising conditions.

• Journal of the Korean Society for Heat Treatment
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• v.16 no.2
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• pp.78-82
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• 2003

Nitrided compound layer and diffusion layer structure were observed by SEM. The compound layer and the constituent of nitrided surface of STS 304, STS 316, STS 410 and SACM 645 steel were analysed using EMPA and XRD respectively. The depth of nitriding layer that is obtained from similar nitriding condition decrease in the order of SACM 645 > STS 410 > STS 316 > STS 304. Result of phase transformation of the nitrided at $550^{\circ}C$ by XRD analysis were as follows; The austenitic stainless steel was mainly consist of $Cr_2N$ accompanying with $Fe_4N$ and $Fe_{2-3}N$ phase and martensitic stainless steel was mainly consist of present $Fe_{2-3}N+Cr_2N$ phase, but SACM 645 steel was $Fe_{2-3}N$ phase present only.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.133-138
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• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.

• Proceedings of the KIEE Conference
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• 2000.11a
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• pp.236-242
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• 2000

NZP velocities were investigated on Ag sheathed multi filamentary Bi-2223 tape and direction type HTS cable. The critical current($I_c$) of Ag sheathed Bi-2223 tape and direction type HTS cable were 12 A, 63 A at 77 K, 0 T. NZP velocities of tape with two condition of DC and AC were almost same at each temperature. In case of DC, the NZP velocities of numerical analysis and experiment were almost same. NZP velocities of direction type HTS cable were 1.9-2.4 cm/sec. The result shows that the total transport current of spiral type HTS cable in $LN_2$ was 475[A], and transport current passed through almost the outer layer (2-layer). Also, AC transport losses in outer layer of HTS cable was proportion to $I^2$ and higher than losses of inner layer. And in case of $I_p=I_c$, calculated numerical loss density was concentrated on the edge of tape and most of loss density in cable was distributed outer layer more than inner layer.

• Journal of the Korean Home Economics Association
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• v.40 no.10
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• pp.77-85
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• 2002

This study was conducted to evaluate the efficiency of various fabrics in protecting from solar radiation and ultraviolet radiation(UV). Six kinds of fabrics were selected and examined in singles or doubles. It was studied how the materials and the thickness of air layer between the fabric and the floor affected the protection efficiency of fabrics from sunlight. The results were as followes; 1) Protection from solar radiation: In the case of over 2 cm air layer, doubled fabric composed of aluminum coating-nylon and white or black polyester/cotton(T/C) was the most protective(p<0.001). In the case of 0 cm air layer, the case without fabric and white T/C were more effective(p<0.001). And the thicker the air layer the more effective the protection. 2) Protection from UV : Doubled fabric composed of aluminum coating-nylon and black T/C was the most protective(p<0.001) and the thinner the air layer the more effective the protection(p<0.001).