• 제목/요약/키워드: lattice variety

검색결과 38건 처리시간 0.027초

기회비용 개념을 이용한 실물투자 프로젝트의 전략적 순 현재가치의 구성요소와 경제적 해석 (Investigation of the Structure of the Strategic Net Present Value and Its Economic Interpretation through the Opportunity Cost Concept)

  • 김규태;최성호
    • 대한산업공학회지
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    • 제29권2호
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    • pp.126-134
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    • 2003
  • Among a variety of models proposed by so far to calculate the real options value when the investment decision about the underlying project may be delayed, the Black-Scholes and the binomial lattice models have been widely used and discussed by academics and practitioners. However these two models do not provide us with intuition into how it is constructed and what it does really mean. In this paper, we will therefore explore its components and practically more intuitive meaning. With the components explored, we developed the mathematical model to calculate the real options value and thus strategic net present value, based on the opportunity cost concept, for which the investment decision about the underlying project is postponed by one year. We will finally present a short illustrative example for readers better understanding on the model proposed in the paper.

Group Contribution Method for Group Contribution Method for Estimation of Vapor Liquid Equilibria in Polymer Solutions

  • Oh, Suk-Yung;Bae, Young-Chan
    • Macromolecular Research
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    • 제17권11호
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    • pp.829-841
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    • 2009
  • This study introduces a specified group-contribution method for predicting the phase equilibria in polymer solutions. The method is based on a modified double lattice model developed previously. The proposed model includes a combinatorial energy contribution that is responsible for the revised Flory-Huggins entropy of mixing, the van der Waals energy contribution from dispersion, a polar force and specific energy contribution. Using the group-interaction parameters obtained from data reduction, the solvent activities for a large variety of mixtures of polymers and solvents over a wide range of temperatures can be predicted with good accuracy. This method is simple but provides improved predictions compared to those of the other group contribution methods.

감압법을 이용한 메탄하이드레이트 생산에 대한 수치적 연구 (Numerical Study on the Production of Methane Hydrate by Depressurization Method)

  • 김진홍;천원기;김남진
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2007년도 춘계학술대회
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    • pp.519-523
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    • 2007
  • Gas(or methane) hydrates are solid solutions when water molecules are linked through hydrogen bonding and create host lattice cavities that can enclose a large variety of guest gas molecules. The natural gas hydrate crystal may exist at low temperature above the normal freezing point of water and high pressure greater than about 30 bars. A lot of quantities of natural gas hydrates exists in the earth and many production schemes are being studied. In the present investigation, depressurization method was considered to predict the production of gas and the simulation of the two phase flow - gas and water - in porous media is being carried out. The simulation show about the fluid flow in porous media have a variety of applications in industry. Results provide the appearance of gas and water production, the pressure profile, the saturation of gas/ water/ hydrates profiles and the location of the pressure front.

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다공성 매질 내에서 메탄 하이드레이트의 분해에 의한 2 상 유동 해석 (Simulation of Two Phase Flow in Porous Media After Disso of Methane Hydrates)

  • 장동근;김남진;이재용;김종보
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2000년도 추계학술대회논문집B
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    • pp.241-246
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    • 2000
  • Gas hydrates are solid solutions when water molecules are linked through hydrogen bondin create host lattice cavities that can enclose a large variety of guest gas molecules. The natural hydrate crystal may exist at low temperature above the normal freezing point of water and pressure greater than about 30 bars. A lot of quantities of natural gas hydrates exists in the ear many production schemes are being studied. In the present investigation, depressurization method considered to predict the production of gas and the simulation of the two phase flow - gas and - in porous media is being carried out. The simulation show about the fluid flow in porous have a variety of applications in industry. Results provide the appearance of gas and water prod the pressure profile, the saturation of gas/ water/ hydrates profiles and the location of the pl front.

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THE PROBABILISTIC METHOD MEETS GO

  • Farr, Graham
    • 대한수학회지
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    • 제54권4호
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    • pp.1121-1148
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    • 2017
  • Go is an ancient game of great complexity and has a huge following in East Asia. It is also very rich mathematically, and can be played on any graph, although it is usually played on a square lattice. As with any game, one of the most fundamental problems is to determine the number of legal positions, or the probability that a random position is legal. A random Go position is generated using a model previously studied by the author, with each vertex being independently Black, White or Uncoloured with probabilities q, q, 1 - 2q respectively. In this paper we consider the probability of legality for two scenarios. Firstly, for an $N{\times}N$ square lattice graph, we show that, with $q=cN^{-{\alpha}}$ and c and ${\alpha}$ constant, as $N{\rightarrow}{\infty}$ the limiting probability of legality is 0, exp($-2c^5$), and 1 according as ${\alpha}$ < 2/5, ${\alpha}=2/5$ and ${\alpha}$ > 2/5 respectively. On the way, we investigate the behaviour of the number of captured chains (or chromons). Secondly, for a random graph on n vertices with edge probability p generated according to the classical $Gilbert-Erd{\ddot{o}}s-R{\acute{e}}nyi$ model ${\mathcal{G}}$(n; p), we classify the main situations according to their asymptotic almost sure legality or illegality. Our results draw on a variety of probabilistic and enumerative methods including linearity of expectation, second moment method, factorial moments, polyomino enumeration, giant components in random graphs, and typicality of random structures. We conclude with suggestions for further work.

Hydrogen Absorption by Crystalline Semiconductors: Si(100), (110) and (111)

  • 정민복;조삼근
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.383-383
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    • 2010
  • Gas-phase hydrogen atoms create a variety of chemical and physical phenomena on Si surfaces: adsorption, abstraction of pre-adsorbed H, Si etching, Si amorphization, and penetration into the bulk lattice. Thermal desorption/evolution analyses exhibited three distinct peaks, including one from the crystalline bulk. It was previously found that thermal-energy gaseous H(g) atoms penetrate into the Si(100) crystalline bulk within a narrow substrate temperature window(centered at ~460K) and remain trapped in the bulk lattice before evolving out at a temperature as high as ~900K. Developing and sustaining atomic-scale surface roughness, by H-induced silicon etching, is a prerequisite for H absorption and determines the $T_s$ windows. Issues on the H(g) absorption to be further clarified are: (1) the role of the detailed atomic surface structure, together with other experimental conditions, (2) the particular physical lattice sites occupied by, and (3) the chemical nature of, absorbed H(g) atoms. This work has investigated and compared the thermal H(g) atom absorptivity of Si(100), Si(111) and Si(110) samples in detail by using the temperature programmed desorption mass spectrometry (TPD-MS). Due to the differences in the atomic structures of, and in the facility of creating atom-scale etch pits on, Si(100), (100) and (110) surfaces, the H-absorption efficiency was found to be larger in the order of Si(100) > Si(111) > Si(110) with a relative ratio of 1 : 0.22 : 0.045. This intriguing result was interpreted in terms of the atomic-scale surface roughening and kinetic competition among H(g) adsorption, H(a)-by-H(g) abstraction, $SiH_3(a)$-by-H(g) etching, and H(g) penetraion into the crystalline silicon bulk.

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Nanomechanical Properties Analysis on Polymer Blend Surfaces by Atomic Force Microscopy

  • Fujinami, So;Nakajima, Ken;Nishi, Toshio
    • 한국고분자학회:학술대회논문집
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    • 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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    • pp.340-340
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    • 2006
  • Applying force-distance curve measurement by atomic force microscopy to a theoretical mechanical model gives us elastic properties of polymer surfaces. Our group focuses on force-mapping method, in which force-distance curve is performed at each lattice point on a sample surface and subsequently a variety of properties derived from analytical results are combined to construct a 2-dimensional image. With this method we succeeded in deriving Young' s modulus distribution map method of rubbery/rubbery polymer blend surfaces with ${\sim}100\;nm$ lateral resolution. We also applied force-mapping method to another theory to divide distribution of hardness from that of adhesion. We will demonstrate recent progress.

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The Fundamental Understanding Of The Real Options Value Through Several Different Methods

  • Kim Gyutai;Choi Sungho
    • 한국경영과학회:학술대회논문집
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    • 한국경영과학회/대한산업공학회 2003년도 춘계공동학술대회
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    • pp.620-627
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    • 2003
  • The real option pricing theory has emerged as the new investment decision-making techniques superceding the traditional discounted cash flow techniques and thus has greatly received muck attention from academics and practitioners in these days the theory has been widely applied to a variety of corporate strategic projects such as a new drug R&D, an internet start-up. an advanced manufacturing system. and so on A lot of people who are interested in the real option pricing theory complain that it is difficult to understand the true meaning of the real option value. though. One of the most conspicuous reasons for the complaint may be due to the fact that there exit many different ways to calculate the real options value in this paper, we will present a replicating portfolio method. a risk-neutral probability method. a risk-adjusted discount rate method (quasi capital asset pricing method). and an opportunity cost concept-based method under the conditions of a binomial lattice option pricing theory.

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개념격자를 이용한 온톨로지 오류검출기법 (An Approach for Error Detection in Ontologies Using Concept Lattices)

  • 황석형
    • 한국IT서비스학회지
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    • 제7권3호
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    • pp.271-286
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    • 2008
  • The core of the semantic web is ontology, which supports interoperability among semantic web applications and enables developer to reuse and share domain knowledge. It used a variety of fields such as Information Retrieval, E-commerce, Software Engineering, Artificial Intelligence and Bio-informatics. However, the reality is that various errors might be included in conceptual hierarchy when developing ontologies. Therefore, methodologies and supporting tools are essential to help the developer construct suitable ontologies for the given purposes and to detect and analyze errors in order to verify the inconsistency in the ontologies. In this paper we propose a new approach for ontology error detection based on the Concept Lattices of Formal Concept Analysis. By using the tool that we developed in this research, we can extract core elements from the source code of Ontology and then detect some structural errors based on the concept lattices. The results of this research can be helpful for ontology engineers to support error detection and construction of "well-defined" and "good" ontologies.

Synthesis of Graphene on Hexagonal Boron Nitride by Low Pressure Chemical Vapor

  • Han, Jae-Hyun;Yeo, Jong-Souk
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.391-392
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    • 2012
  • Graphene is a perfectly two-dimensional (2D) atomic crystal which consists of sp2 bonded carbon atoms like a honeycomb lattice. With its unique structure, graphene provides outstanding electrical, mechanical, and optical properties, thus enabling wide variety of applications including a strong potential to extend the technology beyond the conventional Si based electronic materials. Currently, the widespread application for electrostatically switchable devices is limited by its characteristic of zero-energy gap and complex process in its synthesis. Several groups have investigated nanoribbon, strained, or nanomeshed graphenes to induce a band gap. Among various techniques to synthesize graphene, chemical vapor deposition (CVD) is suited to make relatively large scale growth of graphene layers. Direct growth of graphene on hexagonal boron nitride (h-BN) using CVD has gained much attention as the atomically smooth surface, relatively small lattice mismatch (~1.7%) of h-BN provides good quality graphene with high mobility. In addition, induced band gap of graphene on h-BN has been demonstrated to a meaningful value about ~0.5 eV.[1] In this paper, we report the synthesis of grpahene / h-BN bilayer in a chemical vapor deposition (CVD) process by controlling the gas flux ratio and deposition rate with temperature. The h-BN (99.99%) substrate, pure Ar as carrier gas, and $CH_4$ are used to grow graphene. The number of graphene layer grown on the h-BN tends to be proportional to growth time and $CH_4$ gas flow rate. Epitaxially grown graphene on h-BN are characterized by scanning electron microscopy, atomic force microscopy, and Raman spectroscopy.

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