• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.13-17
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• 2002

Ga$_2$O$_3$ nanomaterials were synthesized from mechanically ground GaN powders with thermal annealing Ga$_2$O$_3$ nanobelts were farmed in a nitrogen atmosphere, while Ga$_2$O$_3$ nanoparticles were formed inan oxygen atmosphere. The structural properties of the Ga$_2$O$_3$ nanomaterials were investigated by X-ray diffractometer (XRD) and high-resolution transmission eleotron microscope (HRTEM). The study of field emission scanning electron microscopy (FESEM) on the microstructures of nanomaterials revealed that the nanobelts are with the range of about 10∼200nm width and 10∼50nm thickness, and that nanoparticles are with the range of about 20∼50nm radius. On the basis of XRD and HRTEM data, we determined that the nanobelts grow toward a direction perpendicular to the (010) lattice plane and that they are enclosed by facets of the (10T) and (101) lattice planes. The formation of the nanobelts may be described by the vapor-solid(VS) mechanism, and the supersaturation device of gaseous phase may play an important role in the formation of Ga$_2$O$_3$ nanomaterials.

• Journal of Magnetics
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• 제13권4호
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• pp.124-127
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• 2008

The magnetic and electronic properties of Ni impurity in bcc Fe ($Ni_1Fe_{26}$) are investigated using the full potential linearized augmented plane wave (FLAPW) method based the generalized gradient approximation (GGA). We found that the Ni impurity in bcc Fe increases both the lattice constant and the magnetic moment of bcc Fe. The calculated equilibrium lattice constant of $Ni_1Fe_{26}$ in the ferromagnetic state was 2.84 A, which is slightly larger than that of bcc Fe (2.83 ${\AA}$). The averaged magnetic moment per atom of $Ni_1Fe_{26}$ unit cell was calculated to be $2.24{\mu}_B$, which is greater than that of bcc Fe (2.17 ${\mu}_B$). The enhancement of magnetic moment of $Ni_1Fe_{26}$ is mainly contributed by the nearest neighbor Fe atom of Ni, i.e., Fe1, and this can be explained by the spin flip of Fe1 d states. The density of states shows that Ni impurity forms a virtual bound state (VBS), which is contributed by Ni $e_{g{\downarrow}}$ states. We suggest that the VBS caused by the Ni impurity is responsible for the spin flip of Fe1 d states.

• 한국재료학회지
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• 제16권8호
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• pp.473-478
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• 2006

The coherent interface energies and misfit strain energies of Fe/XN (X=Ti, Zr, Hf) systems were calculated by first principles method. The interface energies in Fe/TiN, Fe/ZrN and Fe/HfN systems were 0.343, 0.114, and 0.030 $J/m^2$, respectively. Influence of bond energy was estimated using the discrete lattice plane/nearest neighbor broken bond(DLP/NNBB) model. It was found that the dependence of interface energy on the type of nitride was closely related to changes of the bond energies between Fe, X and N atoms before and after formation of the Fe/XN interfaces. The misfit strain energies in Fe/TiN, Fe/ZrN, and Fe/HfN systems were 0.239, 1.229, and 0.955 eV per 16 atoms(Fe; 8 atoms and XN; 8 atoms). More misfit strain energy was generated as the difference of lattice parameters between the bulk Fe and the bulk XNs increased.

• 한국재료학회지
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• 제15권9호
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• pp.566-576
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• 2005

This paper describes an ab Initio study on interface energies, misfit strain energies, and electron structures at coherent interfaces Fe(bcc structure)/MCs(NaCl structure M=Ti, Zr, Hf). The interface energies at relaxed interfaces Fe/TiC, Fe/ZrC and Fe/HfC were 0.263, 0.153 and $0.271 J/m^2$, respectively. It was understood that the dependence of interface energy on the type of carbide was closely related to changes of the binding energies between Fe, M and C atoms before and after formation of the interfaces Fe/MCs with the help of the DLP/NNBB (Discrete Lattice Plane/ Nearest Neighbour Broken Bond) model and data of the electron structures. The misfit strain energies in Fe/TiC, Fe/ZrC and Fe/HfC systems were 0.390, 1.692 and 1.408 eV per 16 atoms(Fe: 8 atoms and MC; 8 atoms). More misfit energy was generated as difference of lattice parameters between the bulk Fe and the bulk MCs increased.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.498-501
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• 2005

Photonic crystals, periodic structure with a high refractive index contrast modulation, have recently become very interesting platform for manipulation of light. The existence of a photonic bandgap, a frequency range in which propagation of light is prevented in all direction, makes photonic crystal very useful in application where spatial localization of light is required for waveguide, beam splitter, and cavity. But fabrication of 3 dimensional photonic crystal is still difficult process. a concept that has recently attracted a lot of attention is a planar photonic crystal based on a dielectric membrane, suspended in the air, and perforated with 2 dimensional lattice of hole. We show that the polymer slabs suspended in air with triangular lattice of air hole can exhibit the in-plane photonic bandgap for TE-like modes. The fabrication of Si master with pillar structure using hot embossing process was investigated for 2 dimensional low-index-contrast photonic crystal waveguide.

• Bulletin of the Korean Chemical Society
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• 제16권11호
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• pp.1084-1088
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• 1995

A complete solid solution (SrLaAl1-xNixO4) between insulating SrLaAlO4 and metallic SrLaNi(Ⅲ)O4 oxides were prepared under high oxygen pressure (1.5 kbar, 800 ℃). They have tetragonal K2NiF4-type structure in all the solid solution range. Compared with lattice parameters of the same solid solution prepared under normal condition (1 bar, 1200 ℃), large decrease in the c-parameter was induced by high pressure treatment while no noticeable variation of the a-parameter was observed. Although marked changes of structural parameters, magnetic susceptibilities, and electron paramagnetic resonance spectra were consistently occurred before and after x=0.5, overall behaviors were essentially the same with those of solid solution prepared under normal condition. Such a phenomenon is explained by assuming the formation of partially filled narrow σ*x2-y2 band for x>0.5. Lattice contraction along the c-axis by high pressure treatment seems not to broaden this band. Particularly, the continuous absorption characteristic of a high free carrier concentration for x>0.5 and the absence of Ni-O in-plane stretching mode in the infrared absorption spectra supports this picture. However, the conductivities increasing with temperature for all solid solution suggest that some localization character, of probably Anderson type, remains for x>0.5.

• 암석학회지
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• 제9권4호
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• pp.205-210
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• 2000

암석중에 미립(직경 0.3mm내외)으로 존재하는 조암광물의 동정 및 결정학적인 배향도를 미소부 X선 회절분석기를 이용하여 측정하였다. 실험에 사용된 표품들은 $A1_{2}SiO_{5}$ 3상디형(규선석, 남정석, 홍주석)으로서 모든 표품들은 박편상의 것을 측정대상으로 하였다 측정에 이용된 X선 회절분석기는 3(${\omega}\;{\chi}\;{\phi}$)축 회전 측각기 및 위치민감형 검출기로 구성되어 있으며 X선원으로는 $CuK_{\alpha}$를 사용하였으며 직경 $50\;\mu\textrm{m}$의 시준기를 사용하였다. 광물 동정은 3(${\omega}\;{\chi}\;{\phi}$)축 회전 측정법에 의해 시행되었으며, 박편표면에 우세하게 나타나는 광물상의 격자면을 알아보기 위해 2(${\omega}\;{\phi}$)축 회전 측정을 실시하였고 2축 회전 측정법에 의해 우세하게 나타난 회절선에 대한 격자방향의 배향도와 극분포를 확인하기 위하여 X-선 극점도 측정을 시행하였다. 3축 회전 측정결과 측정대상 광물상에 대해 동정이 가능하였으며 2축 회전 측정과 X-선 극점도 측정결과 규선석(310), 남성석(200), 홍주석(122)극이 절단면, 즉 박편표면의 법선방향으로 잘 발달하고 있음을 확인할 수 있었다. 본 측정법은 편광현미경을 사용하여 식별이 용이하지 않은 미립조암광물의 동정과 배향도를 알아보는데 유용하게 사용될 수 있는 분석기법이다.

• Journal of Magnetics
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• 제14권4호
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• pp.137-143
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• 2009

The convergence behavior of the all-electron full-potential linearized augmented plane-wave (FLAPW) method with the explicit orthogonalization (XO) scheme is tested on ferromagnetic bulk body-centered-cubic Fe. Applying a commonly used criterion relating the plane-wave and angular momentum cutoffs, $l_{max}\;=\;R_{MT}K_{max}$, where $R_{MT}$ is the muffin-tin (MT) sphere radius and $K_{max}$ is the plane-wave cutoff for the basis - the total energy is converged and stable for $K_{max}R_{MT}$ = 10. The total energy convergence dependence on the star-function cutoff, $G_{max}$, is minimal and so a $G_{max}$ of 3$K_{max}$ or a large enough $G_{max}$ is a reasonable choice. We demonstrate that the convergence with respect to $l_{max}$ or a fixed large enough $G_{max}\;and\;K_{max}$ are independent, and that $K_{max}$ provides a better measure of the convergence than $R_{MT}K_{max}$. The dependence of the total energy on $R_{MT}$ is shown to be small if the core states are treated equivalently, and that the XO scheme is able to treat systems with significantly smaller $R_{MT}$ than the standard LAPW method. For converged systems, the calculated lattice parameter, bulk modulus, and magnetic moments are in excellent agreement with the experimental values.

• 한국진공학회지
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• 제7권4호
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• pp.355-360
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• 1998

250$\AA$과 1340$\AA$두께의 에피탁시($Ba_{0.5}Sr_{0.5}$)$TiO_3$(혹은 BST)박막을 MgO(001)단결정기 판에 펄스형 레이저 증착법(pulsed laser deposition)으로 제조한 후 방사광 X선 산란을 이 용하여 분석하였다. 박막은 초기에 MgO(001)단결정 기판과cube-on-cube관계로 증착되며, 박막이 성장함에 따라 이 관계를 계속 유지하면서 성장하는 것으로 판단된다. 한편 박막이 성장함에 따라 박막의 표면은 급격하게 거칠어지는 반면 기판과 박막 사이의 계면의 거칠기 는 크게 변하지 않았다. 에피탁시 BST박막의 초기상태에서는 c축이 기판과 수직한 방향으 로 배향된 정방정구조를 지녔으며, 아울러 기판의 수직(out-of-plane) 및 평형(in-plane)방향 으로의 모자익(mosaic)분포가 좁아짐을 확인하였다.

• 한국전기전자재료학회논문지
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• 제36권1호
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• pp.74-80
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• 2023

Gallium oxide (Ga₂O₃) thin films were grown on c-, a-, m-, r-plane sapphire substrates using a mist chemical vapor deposition system. Various growth temperature range of 400~600℃ was applied for Ga₂O₃ thin film deposition. Then, several structural properties were characterized such as film thickness, crystal phase, lattice orientation, surface roughness, and optical bandgap. Under the certain growth temperature of 500℃, all grown Ga₂O₃ featured rhombohedral crystal structures and well-aligned preferred orientation to sapphire substrate. The films grown on c-and r-plane sapphire substrates, showed low surface roughness and large optical bandgap compared to those on a-and m-plane substrates. Therefore, various sapphire orientation can be potentially applicable for future Ga₂O₃-based electronics applications.