• Journal of the Korean association of regional geographers
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• v.7 no.1
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• pp.1-20
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• 2001

This study explored the changes of the patterns of land use and the social patterns of ownership of Kumnamno in Kwangju under the rule of Japanese colonialism by analyzing the townscape of Kumnamno in terms of the form and function of it. The research was done considering three periods: the year of 1912, 1930 and 1945. Kumnamno is the name of the street as well as the legal district name, and includes Kumnamno 1-ga, 2-ga, 3-ga, 4-ga and 5-ga. In the year 1912, Kumnamno was utilized as land, farmland and road. With the increase in population and the urbanization of the Kwangju area, it gradually began to be changed into land. By 1941, it was completely turned into land. Before and after the year 1910, the streets intersecting the Kumnamno area came into being as the roads of the Kwangju town, and were built with a lattice pattern. The road building of the Kumnamno began in accordance with the building of Kwangju station in 1922. The road building linking Kwangju Station to Chonnam Provincial Hall marked the first appearance of Kumnamno. The block from Ku-sung-no to Kumnamno 3-ga was built in 1925, the block from Kumnamno 3-ga to 2-ga in 1921, and Kumnamno 1-ga in 1930. It was not until the year 1933 that the construction of streets ranging from Ku-sung-no through Kumnamno 5-ga was finished. Examining the land ownership of the Kumnamno area in 1912, the Japanese possessed the land of Kumnamno 1-ga, 2-ga and 3-ga on the one hand and the Koreans possessed the land of 4-ga and 5-ga on the other hand. In 1930, the Japanese enlarged their sphere of influence and controlled the land located in all the areas of Kumnamno, and the Koreans reduced their ownership of Kumnamno 4-ga and 5-ga. There was a tendency for companies to occupy the land rapidly. In 1945, while the land owned by the Japanese decreased and the land owned by the Koreans did not change in quantity, the possessions of companies increased. To summarize, the Kumnamno area had some changes in the use of land during the above mentioned period. This was in part due to the construction of a street linking Kwangju Station to Chonnam Provincial Hall in order to strengthen the authority of the Japanese Government-General of Korea, as well as the expansion of the residential zone with the increase of the population of Kwangju.

• Journal of the Mineralogical Society of Korea
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• v.28 no.4
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• pp.325-332
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• 2015

Apophyllite (KF)($K_{0.84}Ca_{3.99}Si_{7.70}O_{20}F_{0.72}{\cdot}8H_2O$), one of the sheet silicates, was compressed up to 7.7 GPa at ambient temperature and 15 high pressure data were obtained. Lattice parameters of the starting specimen were as follows: $a_0=8.954(2)\;{\AA}$, $c_0=15.795(2)\;{\AA}$, $V_0=1266.4(4)\;{\AA}^3$. Symmetrical diamond anvil cell was employed with synchrotron radiation in the mode of angular dispersive X-ray diffraction. Bulk modulus was determined to be 59(4) GPa when ${K_0}^{\prime}$ is 4. No clear first order phase transition symptom was observed in the series of XRD pattern. However, second-order phase transition cannot be ruled out from the correlation between normalized pressure and strain.

• Journal of Broadcast Engineering
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• v.24 no.6
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• pp.919-927
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• 2019

In this paper, we propose an accurate camera calibration method for acquiring multiview stereoscopic images. Generally, camera calibration is performed by using checkerboard structured patterns. The checkerboard pattern simplifies feature point extraction process and utilizes previously recognized lattice structure, which results in the accurate estimation of relations between the point on 2-dimensional image and the point on 3-dimensional space. Since estimation accuracy of camera parameters is dependent on feature matching, accurate detection of checkerboard corner is crucial. Therefore, in this paper, we propose the method that performs accurate camera calibration method through accurate detection of checkerboard corners. Proposed method detects checkerboard corner candidates by utilizing 1-dimensional gaussian filters with succeeding corner refinement process to remove outliers from corner candidates and accurately detect checkerboard corners in sub-pixel unit. In order to verify the proposed method, we check reprojection errors and camera location estimation results to confirm camera intrinsic parameters and extrinsic parameters estimation accuracy.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.99-99
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• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.30 no.6
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• pp.467-478
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• 2019

This paper describes the development and measurement results of a wide-band planar active phase array antenna system for an electronic warfare jamming transmitter. The system is designed as an $8{\times}8$ triangular lattice array using a $45^{\circ}$ slant wide-band antenna. The 64-element transmission channel is composed of a wide-band gallium nitride(GaN) solid state power amplifier and a gallium arsenide(GaAs) multi-function core chip(MFC). Each GaAs MFC includes a true-time delay circuit to avoid a wide-band beam squint, a digital attenuator, and a GaAs drive amplifier to electronically steer the transmitted beam over a ${\pm}45^{\circ}$ azimuth angle and ${\pm}25^{\circ}$ elevation angle scan. Measurement of the transmitted beam pattern is conducted using a near-field measurement facility. The EIRP of the designed system, which is 9.8 dB more than the target EIRP performance(P), and the ${\pm}45^{\circ}$ azimuth and ${\pm}25^{\circ}$ elevation beam steering fulfill the desired specifications.

• Applied Chemistry for Engineering
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• v.22 no.5
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• pp.479-485
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• 2011

Pt-Bi/C catalysts supported on carbon black with various Pt/Bi ratios were synthesized by a reduction method. Chloroplatinic acid hydrate ($H_2PtCl_6{\cdot}xH_2O$) and bismuth (III) nitrate pentahydrate ($Bi(NO_3)_3{\cdot}5H_2O$) were used as precursors for Pt and Bi, respectively. Before loading metal on carbon, heat treatment and pretreatment of carbon black in an acidic solution was conducted to enhance the degree of dispersion. The physical property of the synthesized catalysts was investigated by X-ray diffraction and X-ray photoelectron spectroscopy. The XRD pattern of untreated Pt-Bi/C catalyst showed BiPt and $Bi_2Pt$ peaks in addition to Pt peaks. These results imply that Bi atoms were incorporated into the Pt crystal lattice by Pt-Bi alloy formation. The catalytic activity for methanol oxidation was measured using cyclic voltammetry in a mixture of 0.5 M $H_2SO_4$ and 0.5 M $CH_3OH$ aqueous solution. The addition of proper amount of Bi was found to significantly improve catalytic activity for methanol oxidation. The catalytic activity for methanol oxidation was closely related to the stability between electrode and electrolyte. In order to investigate the stability of catalysts, chronoamperometry analysis was carried out in the same solution at 0.6 V.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.6
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• pp.282-286
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• 2021

Penetration depth and compressive residual stress of laser-carburized TiZrN coating by thickness of carbon paste were investigated in terms of carbon potential. The carbon paste was covered with a thickness of 1.1 mm using screen printing, and applied to a thickness of 0.4 mm using spin coating, and laser carburization was performed under the same conditions. As the thickness of carbon paste increased, the diffraction pattern of the laser-carburized TiZrN coating shifted to a lower angle, indicating solid solution strengthening and lattice distortion. For microstructure analysis using TEM, the defects and carbon concentration of the laser-carburized TiZrN coating increased as the carbon paste was thicker. It indicated that the variation of the carbon potential corresponds to the change in the paste thickness. In XPS depth profile analysis, high concentration of carbon and formation of carbide were observed in laser-carburized TiZrN coating with thick carbon paste. It revealed that the carbon concentration on the surface and carbon potential were changed by the thickness control of carbon paste. The compressive residual stress increased from 3.67 GPa to 4.58 GPa by the variation of carbon concentration.

• Economic and Environmental Geology
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• v.56 no.1
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• pp.13-21
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• 2023

X-ray powder diffraction study was conducted on the bulk modulus and phase transition behavior of synthetic zeolite X under high temperature and high pressure. Water and HCO₃^- solution were used as a PTM. Sample was heated and pressurized up to 250 ℃ and 5.18 GPa. The change of unit cell volume and phase transition were observed by X-ray diffraction. The lattice constants and unit cell volume of zeolite X, gmelinite, natrolite, and smectite were calculated using the GSAS2 program to which Le Bail's whole powder pattern decomposition (WPPD) method was applied. The bulk modulus of each zeolite X and smectite were calculated using the EosFit program to which the Birch-Murnaghan equation was applied. The bulk modulus of zeolite X is 89(3) GPa in water run, and zeolite X is 92(3) GPa in HCO₃^- solution run. In both run, pressure induced hydration (PIH) occurred due to the inflow of PTM into the zeolite X framework at initial pressure. Zeolite X transited to gmelinite, natrolite, and smectite in water run. Zeolite X, however, transited to smectite in HCO₃^- solution run. Interzeolite transformation occurred in water run, and did not occur in HCO₃^- solution run, which is assumed that conflict between the environment to form zeolite and the pH of the HCO₃^- solution.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.174-175
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• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.